SOD-323 Plastic-Encapsulate Diodes ESDBKV5V0D3 Bi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323
ESDBKV5V0D3
Plastic-Encapsulate Diodes
Bi-direction ESD Protection Diode
DESCRIPTION
SOD-323
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, low capacitance, and fast
response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, low capacitance, and high level of ESD protection
makes them a flexible solution for applications such as HDMI, Display Port TM, and
MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer
equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
FEATURES

Bi-directional ESD protection of one line

Excellent package:1.7mm×1.3mm×1.0mm

Low capacitance: 2pF

Fast response time

Low reverse stand−off voltage: 5V

JESD22-A114-B ESD Rating of class 3B per human

Low reverse clamping voltage

Low leakage current
body model

IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS

Cellular phones

Portable electronics

High speed data lines

USB Interface

Handheld-Wireless Systems

Other electronics equipments communi-

PDAs

Ethernet – 10/100/1000 Base T
cation systems
MARKING
BV5 = Device code
Solid dot = Green molding compound device,if
none, the normal device
Front side
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CHANGJIANG ELEC.TECH.
ESDBKV5V0D3
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
IEC 61000-4-2 ESD Voltage
Air Model
Contact Model
JESD22-A114-B ESD Voltage
Per Human Body Model
ESD Voltage
VESD(1)
±25
kV
±16
±0.4
(2)
750
W
(2)
30
A
PPP
Peak Pulse Current
Unit
±25
Machine Model
Peak Pulse Power
Limit
IPP
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
Tstg
-55 ~ +150
℃
Storage Temperature Range
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard
JESD22-A114-B Standard
Contact Discharge
Air Discharge
ESD Class
Human Body Discharge V
Level
Test Voltage kV
Level
Test Voltage kV
0
0~249
1
2
1
2
2
4
2
4
1A
1B
1C
250~499
500~999
1000~1999
3
6
3
8
4
8
4
15
2
3A
3B
2000~3999
4000~7999
8000~15999
ESD pulse waveform according to IEC61000-4-2
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8/20μs pulse waveform according to IEC 61000-4-5
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CHANGJIANG ELEC.TECH.
ESDBKV5V0D3
ELECTRICAL PARAMETER
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Reverse Standoff Voltage
V-I characteristics for a Bi-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse stand off voltage
Reverse leakage current
Breakdown voltage
Clamping voltage
Junction capacitance
Symbol
Test conditions
Min
Typ
Max
Unit
5
V
1
μA
8
V
IPP=30A
27
V
VR=0V,f=1MHz
2
pF
(1)
VRWM
IR
V(BR)
(2)
VC
CJ
VRWM=5V
IT=1mA
6
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
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CHANGJIANG ELEC.TECH.
ESDBKV5V0D3
TYPICAL CHARACTERISTICS
Reverse
VC ——
Characteristics
100
Ta=25℃
Pulsed
tp=8/20us
50
CLAMPING VOLTAGE VC(V)
T=
a 2
5℃
25
T=
a 1
00
℃
(mA)
75
REVERSE CURRENT IR
IPP
40
0
-25
-50
30
20
10
-75
-100
-9
-6
-3
0
REVERSE VOLTAGE
3
VR
6
0
9
0
5
10
15
20
25
30
35
REVERSE PEAK PULSE CURRENT IPP (A)
(V)
Capacitance Characteristics
2.0
Ta=25℃
JUNCTION CAPACITANCE
CJ (pF)
f=1MHz
1.6
1.2
0.8
0.4
0
1
2
REVERSE VOLTAGE
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3
4
VR
5
(V)
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CHANGJIANG ELEC.TECH.
ESDBKV5V0D3
PACKAGE OUTLINE AND PAD LAYOUT INFORMATION
Dimensions In Millimeters
Min
Max
1.000
0.000
0.100
0.800
0.900
0.250
0.350
0.080
0.150
1.200
1.400
1.600
1.800
2.500
2.700
0.475 REF
0.250
0.400
0°
8°
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
θ
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Dimensions In Inches
Min
Max
0.039
0.000
0.004
0.031
0.035
0.010
0.014
0.003
0.006
0.047
0.055
0.063
0.071
0.098
0.106
0.019 REF
0.010
0.016
0°
8°
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CHANGJIANG ELEC.TECH.
ESDBKV5V0D3
TAPE AND REEL INFORMATION
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