PNP PNP Epitaxial Silicon Transistor NPN R 2SA1837 APPLICATIONS Power Amplifier Applications FEATURES High collector voltage VCEO=-230V (min) Complementary to 2SC4793 High transition frequency :fT=70MHz(Typ.) RoHS product VCEO=-230V (min) 2SC4793 fT=70MHz(Typ.) RoHS Package TO-220MF 不ORDER MESSAGE不 不 Order codes 2SA1837-O-MF-N-B Marking Halogen Free 2SA1837 Package Packaging TO-220MF NO Tube ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted) Parameter Symbol Value Unit VCBO -230 V VCEO -230 V — Collector- Emitter Voltage — Collector- Emitter Voltage — Emitter-Base Voltage VEBO -5 V Collector Current DC IC -1 A Base Current IB -0.1 A 2.0 W 20 W IB=0 Collector Dissipation(Ta=25 ) Collector Dissipation(Tc=25 ) PC Junction Temperature Tj Storage Temperature Tstg 150 -55~+150 THERMAL CHARACTERISTIC Symbo min max Unit Thermal Resistance Junction Ambient TO-220MF Rth(j-a) - 62.5 /W Rth(j-c) - 6.25 /W Parameter Thermal Resistance Junction Case 201312B TO-220MF 1/4 2SA1837 R ELECTRICAL CHARACTERISTIC Tests conditions Parameter Value(min) Value(typ) Value(max) Unit ICBO VCE=-230V,IE=0 - - -1.0 μA IEBO VEB=-5V,IC=0 - - -1.0 μA V(BR)CEO Ic=-10mA,IB=0 -230 - - V hFE VCE=-5V,IC=0.1A 100 160 270 - VCE(sat) IC=-0.5A,IB=-0.05A - - -1.5 V VBE VCE=-5V,IC=-0.5A - - -1.0 V fT VCE=-10V, Ic=-0.1A, - 70 - MHz Cob VCB=-10V,IE=0,f=1MHz - 30 - pF ON ELECTRICAL CHARACTERISTICS (curves) VCE(sat)- IC Tc=25 Vce=-5V COLLECTOR CURRENT VCE(sat) V Tc=125 Common emitter IC/IB = 10 Single pulse test Tc=125 VOLTAGE COLLECTOR-BMITTER SATURATION DC CURRENT GAIN hFE hFE – IC Tc=25 COLLECTOR CURRENT IC A PC-TC Tc=125 Tc=25 PC (percent) COLLECTOR CURRENT IC A IC- VBE Common emitter Vce=--5V BASE-EMITTER VOLTAGE 201312B VBE V Infinite heat sink CASE TEMPERATURE TC 2/4 IC A 2SA1837 R COLLECTOR CURRENT IC A SAFE OPERATION AREA Single nonrepetitive pulse Tc = 25°C Curves must be derated linear with increase in temperature. COLLECTOR-EMITTER VOLTAGE VCE V PACKAGE MECHANICAL DATA TO-220MF Unit mm mm 201312B A 4.50-4.90 B <1.47 b 0.70-0.90 c 0.45-0.60 D 15.67-16.07 E 9.96-10.36 e 2.54TYPE F 2.34-2.74 L 12.58-13.38 L2 3.13-3.33 P 3.08-3.28 Q 3.2-3.4 Q1 2.56-2.96 3/4 2SA1837 R NOTE 1. 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 2. 3. 4. CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax 86-432-64665812 Web Site www.hwdz.com.cn 132013 86-432-64675588 64675688 64678411 : 86-432-4671533 MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411 Fax: 86-432-64671533 99 Appendix Revision History Date Last Rev. New Rev. 2013-12-30 201311A 201312B 201312B Description of Changes 4/4