NPN Silicon NPN Triple Diffused Transistor R 2SC4793 APPLICATIONS Power Amplifier Applications FEATURES High collector voltage VCEO=230V (min) Complementary to 2SA1937 High transition frequency :fT=100MHz(Typ.) RoHS product VCEO=230V (min) 2SA1837 fT=100MHz(Typ.) RoHS Package TO-220MF 不ORDER MESSAGE不 不 Order codes 2SC4793-O-MF-N-B Marking Halogen Free 2SC4793 Package Packaging TO-220MF NO Tube ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted) Parameter Symbol Value Unit VCBO 230 V VCEO 230 V — Collector- Emitter Voltage — Collector- Emitter Voltage — Emitter-Base Voltage VEBO 5 V Collector Current DC IC 1 A Base Current IB 0.1 A 2.0 W 20 W IB=0 Collector Dissipation(Ta=25 ) Collector Dissipation(Tc=25 ) PC Junction Temperature Tj Storage Temperature Tstg 150 -55~+150 THERMAL CHARACTERISTIC Symbo min max Unit Thermal Resistance Junction Ambient TO-220MF Rth(j-a) - 62.5 /W Rth(j-c) - 6.25 /W Parameter Thermal Resistance Junction Case 201311A TO-220MF 1/4 2SC4793 R ELECTRICAL CHARACTERISTIC Tests conditions Parameter Value(min) Value(typ) Value(max) Unit ICBO VCE=230V,IE=0 - - 1.0 μA IEBO VEB=5V,IC=0 - - 1.0 μA V(BR)CEO Ic=10mA,IB=0 230 - - V hFE VCE=5V,IC=0.1A 100 160 270 - VCE(sat) IC=0.5A,IB=0.05A - - 1.5 V VBE VCE=5V,IC=0.5A - - 1.0 V fT VCE=10V, Ic=0.1A, - 100 - MHz Cob VCB=10V,IE=0,f=1MHz - 20 - pF ON ELECTRICAL CHARACTERISTICS (curves) VCE(sat)- IC hFE – IC COLLECTOR-BMITTER SATURATION Tc=125 式市市 IC/IB = 10 Single pulse test Tc=125 市小式 Tc=25 Vce=5V 式市 市小市式 Common emitter 市小式市 COLLECTOR CURRENT 式小市市 Tc=25 VOLTAGE DC CURRENT GAIN hFE 式市市市 VCE(sat) V 式 市小市式 市小市式 IC A 市小式 式 COLLECTOR CURRENT PC-TC IC- VBE 市小明 PC (percent) COLLECTOR CURRENT IC A 式 市小换 Tc=25 Tc=125 市小4 Common emitter Vce=-5V 市小性 Infinite heat sink 市 市 市小性 市小4 市小换 市小明 BASE-EMITTER VOLTAGE 201311A 式 VBE V 式小性 式小4 CASE TEMPERATURE TC 2/4 IC A 2SC4793 R COLLECTOR CURRENT IC A SAFE OPERATION AREA Single nonrepetitive pulse Tc = 25°C Curves must be derated linear with increase in temperature. COLLECTOR-EMITTER VOLTAGE VCE V PACKAGE MECHANICAL DATA TO-220MF Unit mm mm 201311A A 4.50-4.90 B <1.47 b 0.70-0.90 c 0.45-0.60 D 15.67-16.07 E 9.96-10.36 e 2.54TYPE F 2.34-2.74 L 12.58-13.38 L2 3.13-3.33 P 3.08-3.28 Q 3.2-3.4 Q1 2.56-2.96 3/4 2SC4793 R NOTE 1. 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 2. 3. 4. CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax 86-432-64665812 Web Site www.hwdz.com.cn 132013 86-432-64675588 64675688 64678411 : 86-432-4671533 MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411 Fax: 86-432-64671533 99 Appendix Date Last Rev. 2013-11-28 201311A Revision History New Rev. Description of Changes 201311A 4/4