PNP PNP Epitaxial Silicon Transistor NPN R 2SB688 APPLICATIONS Power Amplifier Applications FEATURES VCEO=160V (min) 2SD718 45-50W RoHS Package High collector voltage VCEO=160V (min) Complementary to 2SD718 Recommended for 45-50W audio frequency amplifier output RoHS product TO-247 1. 2. BASE COLLECTOR (HEAT SINK) 3. EMITTER 不ORDER MESSAGE不 不 Order codes 2SB688-O-W-N-B Marking Halogen Free 2SB688 NO Package Packaging Weight Tube 6.00g(typ) TO-247 ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted) Parameter Symbol Value Unit — Collector- Base Voltage VCBO -160 V — Collector- Emitter Voltage VCEO -160 V — Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Base Current IB -1.0 A PC 80 W Junction Temperature Tj 150 Storage Temperature Tstg Collector Dissipation(Tc=25 201312B ) -55~150 1/5 2SB688 R ELECTRICAL CHARACTERISTIC Tests conditions Parameter Value(min) Value(typ) Value(max) Unit V(BR)CEO Ic=-50mA,IB=0 -160 - - V ICBO VCB=-160V,IE=0 - - -10.0 µA IEBO VEB=-5V,IC=0 - - -10.0 mA hFE VCE=-5V,IC=-1.0A 80 120 160 - VCE(sat) IC=-6.0A,IB=-0.6A - - -2.0 V VBE(ON) VCE=-5V,IC=-5.0A - - -1.5 V fT VCE=-5V, Ic=-1.0A - 12 - MHz COb VCE=10V, IE =0,f=1MHz - 170 - pF THERMAL CHARACTERISTIC Parameter Thermal Resistance Junction Case TO-247 Symbo min max Unit Rth(j-c) - 1.56 /W MARKING 201312B 2/5 2SB688 R ELECTRICAL CHARACTERISTICS (curves) IC A IC-VBE hFE – IC hFE Common emitter Vce=-5V DC CURRENT GAIN COLLECTOR CURRENT Tc=125 Tc=125 Tc=25 BASE-EMITTER VOLTAGE Tc=25 Common emitter VCE = -5 V Single pulse test COLLECTOR CURRENT VBE V PC-TC PC (percent) V Common emitter IC/IB = 10 VCE(sat) Single pulse test Tc=125 Tc=25 VOLTAGE COLLECTOR-BMITTER SATURATION VCE(sat)- IC IC A Infinite heat sink COLLECTOR CURRENT CASE TEMPERATURE IC A TC COLLECTOR CURRENT IC A SOA 1ms TC=25 DC Operation 10ms 100ms Single nonrepetitive pulse Tc = 25°C Curves must be derated linear with increase in temperature. COLLECTOR-EMITTER VOLTAGE 201312B VCE V 3/5 2SB688 R PACKAGE MECHANICAL DATA TO-247 Unit mm mm 201312B A 4.90-5.10 B 2.95-3.35 B1 1.95-2.35 b 1.15-1.35 c 0.50-0.70 D 20.9-21.1 E 15.7-15.9 e 5.34-5.54 F 1.90-2.10 L 19.4-20.4 L2 4.03-4.23 P 3.50-3.70 Q 6.00-6.40 Q1 2.30-2.50 4/5 2SB688 R NOTE 1. 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 2. 3. 4. CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax 86-432-64665812 Web Site www.hwdz.com.cn 132013 86-432-64675588 64675688 64678411 : 86-432-4671533 MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411 Fax: 86-432-64671533 99 Appendix Revision History Date Last Rev. New Rev. 2013-12-30 201311A 201312B 201312B Description of Changes 5/5