N 沟道增强型场效应晶体管 N-CHANNEL MOSFET R JCS50N06H 主要参数 封装 Package MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 50 A 60 V 23 mΩ 34 nc 用途 APPLICATIONS z 高频开关电源 z UPS 电源 z High frequency switch 产品特性 FEATURES z Low gate charge z Low Crss z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z 低栅极电荷 z 低 Crss z 开关速度快 z 产品全部经过雪崩测试 z 高抗 dv/dt 能力 z RoHS 产品 mode power supplies z UPS 订货信息 ORDER MESSAGE 印 Order codes Marking JCS50N06CH-O-C-N-B JCS50N06CH TO-220C 否 JCS50N06FH-O-F-N-B JCS50N06FH TO-220MF JCS50N06VH-O-V-N-B JCS50N06VH JCS50N06RH-O-R-N-B JCS50N06RH-O-R-N-A 版本:201410B 记 封 装 无卤素 订 货 型 号 Halogen Free 包 装 器件重量 Packaging Device Weight NO 条管 Tube 2.15 g(typ) 否 NO 条管 Tube 2.20 g(typ) IPAK 否 NO 条管 Tube 0.35 g(typ) JCS50N06RH DPAK 否 NO 条管 Tube 0.30 g(typ) JCS50N06RH DPAK 否 NO 卷盘 Reel 0.30 g(typ) Package 1/11 JCS50N06H R 绝对最大额定值 项 ABSOLUTE RATINGS (Tc=25℃) 目 Parameter 符 Symbol 最高漏极-源极直流电压 Drain-Source Voltage VDSS 连续漏极电流 Drain Current ID T=25℃ T=100℃ -continuous 数 号 值 Value JCS50N06RH/VH JCS50N06CH 单 JCS50N06FH 60 位 Unit V 50 50* A 31.7 31.7* A 最大脉冲漏极电流(注 1) Drain Current – pulse(note 1) IDM 200* A 最高栅源电压 Gate-Source Voltage VGSS ±20 V 单脉冲雪崩能量(注 2) Single Pulsed Avalanche Energy (note 2) EAS 927 mJ 雪崩电流(注 1) Avalanche Current(note 1) IAR 50 A 12 mJ 7.0 V/ns 重复雪崩能量(注 1) Repetitive Avalanche Energy(note EAR 1) 二极管反向恢复最大电压变化速率 dv/dt (注 3) Peak Diode Recovery dv/dt(note 3) 耗散功率 Power Dissipation PD TC=25℃ -Derate above 25℃ 87.5 103.8 56 W 0.70 0.83 0.45 W/℃ 最高结温及存储温度 Operating and Storage Temperature TJ,TSTG Range 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes TL -55~+150 ℃ 300 ℃ *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 版本:201410B 2/11 JCS50N06H R 电特性 ELECTRICAL CHARACTERISTICS 项 目 Parameter 符 号 Symbol 测试条件 Tests conditions 最小 典型 最大 单位 Min Typ Max Units 关态特性 Off –Characteristics 漏-源击穿电压 Drain-Source Voltage BVDSS 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to 25℃ TJ 零栅压下漏极漏电流 Zero Gate Voltage Drain Current IDSS 正向栅极体漏电流 Gate-body leakage current, forward IGSSF VDS=0V, 反向栅极体漏电流 Gate-body leakage current, reverse IGSSR VDS=0V, 阈值电压 Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 静态导通电阻 Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=25A 正向跨导 Forward Transconductance gfs VDS = 40V, ID=25A(note 4) ID=250μA, VGS=0V 60 - - V - 0.6 - V/℃ VDS=60V,VGS=0V, TC=25℃ - - 1 μA VDS=48V, - - 10 μA VGS =30V - - 100 nA VGS =-30V - - -100 nA 2.0 - 4.0 V - 19 23 mΩ 30 - S TC=125℃ 通态特性 On-Characteristics 动态特性 Dynamic Characteristics 输入电容 Input capacitance Ciss 输出电容 Output capacitance Coss 反向传输电容 Reverse transfer capacitance Crss 版本:201410B VDS=25V, VGS =0V, f=1.0MHZ - 900 1125 pF - 430 540 pF - 80 100 pF 3/11 JCS50N06H R 电特性 ELECTRICAL CHARACTERISTICS 开关特性 Switching Characteristics 延迟时间 Turn-On delay time td(on) 上升时间 Turn-On rise time tr 延迟时间 Turn-Off delay time VDD=30V,ID=50A,RG=50Ω (note 4,5) - 40 90 ns - 100 210 ns td(off) - 90 190 ns 下降时间 Turn-Off Fall time tf - 80 170 ns 栅极电荷总量 Total Gate Charge Qg - 34 45 nC 栅-源电荷 Gate-Source charge Qgs - 7 - nC 栅-漏电荷 Gate-Drain charge Qgd - 17 - nC VDS =48V , ID=50A VGS =10V (note 4,5) 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS - - 50 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - - 200 A 1.4 V 正向压降 Drain-Source Diode Forward Voltage VSD 反向恢复时间 Reverse recovery time trr 反向恢复电荷 Reverse recovery charge Qrr VGS=0V, IS=50A - VGS=0V, IS=50A dIF/dt=100A/μs (note 4) - 50 - ns - 80 - μC 热特性 THERMAL CHARACTERISTIC 项 目 Parameter 结到管壳的热阻 Thermal Resistance, Junction to Case 符 最大 Max 号 单 位 Symbol JCS50N06RH/VHJCS50N06CH JCS50N06FH Unit Rth(j-c) 1.43 1.20 2.22 ℃/W 结到环境的热阻 Rth(j-A) Thermal Resistance, Junction to Ambient 62.5 62.5 62.5 ℃/W 注释: Notes: 1:脉冲宽度由最高结温限制 1:Pulse width limited by maximum junction 2:L=0.4mH, IAS=50A, VDD=25V, RG=25 Ω,起始 结温 TJ=25℃ 3:ISD ≤50A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温 TJ=25℃ 4:脉冲测试:脉冲宽度≤300μs,占空比≤2% 5:基本与工作温度无关 temperature 2:L=0.4mH, IAS=50A, VDD=25V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤50A,di/dt ≤300A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature 版本:201410B 4/11 JCS50N06H R 特征曲线 ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics 100 100 ID [A] I D [A] VGS Top 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V 150℃ 25℃ 10 10 Notes: 1.250μs pulse test 2.VDS=40V Notes: 1. 250μs pulse test 2. TC=25℃ 0.1 1 1 4 10 6 8 10 12 VGS [V] V DS [V] On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature IDR [A] 100 150 ℃ 25 ℃ Notes: 1. 250μs pulse test 2. VGS=0V 10 0.5 1.0 1.5 VSD [V] Capacitance Characteristics Gate Charge Characteristics 12 3 1x10 VDS=48V VDS=12V Ciss Coss Crss 0 0 10 版本:201410B 1 10 V D S Drain-Source Voltage [V] VDS=30V 10 VGS Gate Source Voltage[V] Capacitance [pF] Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 2 10 8 6 4 2 0 0 10 20 30 40 Qg Toltal Gate Charge [nC] 5/11 JCS50N06H R 特征曲线 ELECTRICAL CHARACTERISTICS (curves) Maximum Safe Operating Area JCS50N06CH/RH/VH Maximum Drain Current vs. Case Temperature 60 2 ID Drain Current [A] I D Drain Current [A] 10 40 Operation in This Area is Limited by RDS(ON) 1ms 10ms 100ms 1 10 DC 0 10 20 Note: 1 TC=25℃ 2 TJ=150℃ 3 Single Pulse -1 10 0 25 50 75 100 TC Case Temperature [℃] 125 -2 10 150 I D Drain Current [A] 100μs 1ms 1 10 10ms 100ms DC 0 0 .2 0 .1 N o te s : 1 Z θ J C (t)= 1 .2 0 ℃ /W M a x 2 D u ty F a c to r , D = t 1 /t 2 3 T J M -T c = P D M * Z θ J C (t) 0 .0 5 0 .0 2 0 .0 1 Zθ -1 10 0 .1 P DM 0 .0 1 Note: 1 TC=25℃ 2 TJ=150℃ 3 Single Pulse -2 t1 s in g le p u ls e 1 E -5 0 1 10 1 E -4 2 10 1 E -3 t2 0 .0 1 0 .1 1 t 1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] 10 V DS Drain-Source Voltage [V] Transient Thermal Response Curve JCS50N06FH D = 0 .5 0 .2 0 .1 0 .1 N 1 2 3 0 .0 5 o te s : Z θ J C(t)= 2 .2 2 ℃ /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z θ J C(t) 0 .0 2 θ JC (t) Thermal Response 1 0 .0 1 P Z 10 2 10 D = 0 .5 JC 10 10 1 10 V DS Drain-Source Voltage [V] 1 Operation in This Area is Limited by RDS(ON) -1 0 10 Transient Thermal Response Curve JCS50N06CH (t) Thermal Response 2 -1 10 Maximum Safe Operating Area JCS50N06FH 10 100μs 0 .0 1 DM t1 s in g le p u ls e 1 E -5 1 E -4 1 E -3 0 .0 1 t2 0 .1 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] 版本:201410B 6/11 10 R JCS50N06H 外形尺寸 PACKAGE MECHANICAL DATA TO-220C 版本:201410B 单位 Unit:mm 7/11 R JCS50N06H 外形尺寸 PACKAGE MECHANICAL DATA TO-220MF 版本:201410B 单位 Unit:mm 8/11 R JCS50N06H 外形尺寸 PACKAGE MECHANICAL DATA IPAK 版本:201410B 单位 Unit:mm 9/11 R JCS50N06H 外形尺寸 PACKAGE MECHANICAL DATA DPAK 版本:201410B 单位 Unit:mm 10/11 JCS50N06H R 注意事项 1.吉林华微电子股份有限公司的产品销售分 为直销和销售代理,无论哪种方式,订货 时请与公司核实。 2.购买时请认清公司商标,如有疑问请与公 司本部联系。 3.在电路设计时请不要超过器件的绝对最大 额定值,否则会影响整机的可靠性。 4.本说明书如有版本变更不另外告知 NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 联系方式 CONTACT 吉林华微电子股份有限公司 JILIN SINO-MICROELECTRONICS CO., LTD. 公司地址:吉林省吉林市深圳街 99 号 ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64678411 Fax:86-432-64665812 Web Site:www.hwdz.com.cn 邮编:132013 总机:86-432-64678411 传真:86-432-64665812 网址:www.hwdz.com.cn 市场营销部 地址:吉林省吉林市深圳街 99 号 邮编:132013 电话: 86-432-64675588 64675688 64678411 传真: 86-432-64671533 版本:201410B MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411 Fax: 86-432-64671533 11/11