N 沟道增强型场效应晶体管 N-CHANNEL MOSFET R JCS9N50T 主要参数 封装 Package MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 9 A 500 V 0.75 Ω 29 nC 用途 APPLICATIONS z 高频开关电源 z 电子镇流器 z UPS 电源 z High 产品特性 FEATURES z Low gate charge z Low Crss (typical 26pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z 低栅极电荷 z 低 Crss (典型值 26pF) z 开关速度快 z 产品全部经过雪崩测试 z 高抗 dv/dt 能力 z RoHS 产品 efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS 订货信息 ORDER MESSAGE 订 货 型 号 印 记 Order codes Marking 封 装 Package 无卤素 Halogen Free 包 装 器件重量 Packaging Device Weight JCS9N50CT-O-C-N-B JCS9N50CT TO-220C 否 NO 条管 Tube 2.15 g(typ) JCS9N50FT-O-F-N-B JCS9N50FT TO-220MF 否 NO 条管 Tube 2.20 g(typ) 版本：201010C 1/10 JCS9N50T R 绝对最大额定值 项 ABSOLUTE RATINGS (Tc=25℃) 目 Parameter 符 数 号 Symbol 值 Value 单 位 JCS9N50CT JCS9N50FT Unit 500 500 V 最高漏极－源极直流电压 Drain-Source Voltage VDSS 连续漏极电流 Drain Current ID T=25℃ T=100℃ 9 9* A 5.7 5.7* A 最大脉冲漏极电流（注 1） Drain Current - pulse （note 1） IDM 36 36* A 最高栅源电压 Gate-Source Voltage VGSS -continuous 单脉冲雪崩能量（注 2） EAS Single Pulsed Avalanche Energy（note 2） ±30 V 369 mJ 雪崩电流（注 1） Avalanche Current（note 1） IAR 9 A 重复雪崩能量（注 1） Repetitive Avalanche Current（note 1） EAR 15.8 mJ 4.5 V/ns 二极管反向恢复最大电压变化速率（注 3） dv/dt Peak Diode Recovery dv/dt（note 3） 耗散功率 Power Dissipation PD TC=25℃ -Derate above 25℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ，TSTG 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes TL 158 48 W 1.27 0.38 W/℃ -55～+150 ℃ 300 ℃ *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 版本：201010C 2/10 JCS9N50T R 电特性 ELECTRICAL CHARACTERISTICS 项 目 Parameter 符 号 Symbol 测试条件 Tests conditions 最小 典型 最大 单位 Min Typ Max Units 关态特性 Off –Characteristics 漏－源击穿电压 Drain-Source Voltage BVDSS 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to 25℃ TJ ID=250μA, VGS=0V 500 - - V - 0.63 - V/℃ VDS=500V,VGS=0V, TC=25℃ - - 1 μA VDS=400V, - - 10 μA 零栅压下漏极漏电流 Zero Gate Voltage Drain Current IDSS 正向栅极体漏电流 Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - - 100 nA 反向栅极体漏电流 Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA 阈值电压 Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 3.0 - 5.0 V 静态导通电阻 Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=4.5A - 0.64 0.75 Ω 正向跨导 Forward Transconductance gfs VDS = 40V, ID=4.5A（note 4） - 6.6 S TC=125℃ 通态特性 On-Characteristics - 动态特性 Dynamic Characteristics 输入电容 Input capacitance Ciss 输出电容 Output capacitance Coss 反向传输电容 Reverse transfer capacitance Crss 版本：201010C VDS=25V, VGS =0V, f=1.0MHZ - 810 1060 pF - 155 190 pF - 26 33 pF 3/10 JCS9N50T R 电特性 ELECTRICAL CHARACTERISTICS 开关特性 Switching Characteristics 延迟时间 Turn-On delay time td(on) 上升时间 Turn-On rise time tr 延迟时间 Turn-Off delay time VDD=250V,ID=9A,RG=25Ω （note 4，5） - 64 83 ns - 52 68 ns td(off) - 101 135 ns 下降时间 Turn-Off Fall time tf - 66 91 ns 栅极电荷总量 Total Gate Charge Qg - 29 38 nC 栅－源电荷 Gate-Source charge Qgs - 6.3 - nC 栅－漏电荷 Gate-Drain charge Qgd - 12 - nC VDS =400V , ID=9A VGS =10V （note 4，5） 漏－源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS - - 9 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - - 36 A - - 1.4 V - 341 - ns - 2.97 - μC 正向压降 Drain-Source Diode Forward Voltage VSD 反向恢复时间 Reverse recovery time trr 反向恢复电荷 Reverse recovery charge Qrr VGS=0V, IS=9A VGS=0V, IS=9A (note 4) dIF/dt=100A/μs 热特性 THERMAL CHARACTERISTIC 项 目 Parameter 符 最大 号 Symbol 单 Max JCS9N50CT JCS9N50FT 位 Unit 结到管壳的热阻 Thermal Resistance, Junction to Case Rth(j-c) 0.79 2.6 ℃/W 结到环境的热阻 Thermal Resistance, Junction to Ambient Rth(j-A) 62.5 62.5 ℃/W Notes: 注释： 1：Pulse width limited by maximum junction 1：脉冲宽度由最高结温限制 temperature 2：L=8.2mH, IAS=9A, VDD=50V, RG=25 Ω,起始结温 2：L=8.2mH, IAS=9A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3：ISD ≤9A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温 TJ=25℃ TJ=25℃ 3：ISD ≤9A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4：脉冲测试：脉冲宽度≤300μs,占空比≤2％ 4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％ 5：基本与工作温度无关 5：Essentially independent of operating temperature 版本：201010C 4/10 JCS9N50T R ELECTRICAL CHARACTERISTICS (curves) 特征曲线 Transfer Characteristics On-Region Characteristics VGS 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Top 10 ID [A] I D [A] 10 25℃ 150℃ 1 Notes: 1. 250μs pulse test 2. TC=25℃ 1 Notes: 1.250μs pulse test 2.VDS=40V 0.1 1 10 2 4 6 8 10 VGS [V] VDS [V] On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.00 0.95 10 VGS=10V 0.85 IDR [A] RDS (on ) [ Ω ] 0.90 0.80 25℃ 1 0.75 VGS=20V 0.70 Note:Tj=25℃ 0.65 0.60 0 2 4 6 8 10 12 14 16 18 0.1 0.2 0.3 0.4 0.5 0.6 ID [A] 0.7 0.8 0.9 1.0 1.1 VSD [V] Gate Charge Characteristics Capacitance Characteristics 12 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd VDS=400V VDS=250V 10 VDS=100V VGS Gate Source Voltage[V] 3 3x10 Capacitance [pF] Notes: 1. 250μs pulse test 2. VGS=0V 150℃ 8 3 2x10 6 3 4 1x10 2 0 -1 10 版本：201010C 0 10 1 10 V DS Drain-Source Voltage [V] 0 0 10 20 30 Qg Toltal Gate Charge [nC] 5/10 JCS9N50T R 特征曲线 ELECTRICAL CHARACTERISTICS (curves) On-Resistance Variation vs. Temperature Breakdown Voltage Variation vs. Temperature 1.2 4.0 BV -(DS ) (Normalized) 3.5 1.1 R D (on ) (Normalized) 3.0 1.0 0.9 0.8 -75 Notes: 1. VGS=0V 2. ID=250μA -50 -25 0 25 50 T j 75 100 125 0.0 -75 150 ID Drain Current [A] I D Drain Current [A] 10 1 0 0 1 50 75 100 125 150 10μs 1 100μs 1ms 10ms 0 Note: 1 TC=25℃ 2 TJ=150℃ 3 Single Pulse DC -1 10 2 10 25 10 100ms Note: 1 TC=25℃ 2 TJ=150℃ 3 Single Pulse 10 -25 10 1ms 10ms 10 -50 Operation in This Area is Limited by RDS(ON) 2 10 -1 Notes: 1. VGS=10V 2. ID=4.5A Maximum Safe Operating Area For JCS9N50FT 100μs 0 1.0 Tj [℃ ] 10μs 10 1.5 [℃ ] Operation in This Area is Limited by RDS(ON) 2 2.0 0.5 Maximum Safe Operating Area For JCS9N50CT 10 2.5 0 10 10 V DS Drain-Source Voltage [V] 1 10 2 10 VDS Drain-Source Voltage [V] 100ms DC 3 10 Maximum Drain Current vs. Case Temperature 10 ID Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC Case Temperature [℃] 版本：201010C 6/10 JCS9N50T R 特征曲线 ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve For JCS9N50CT D = 0 .5 0 .2 0 .1 0 .1 N 1 2 3 0 .0 5 0 .0 2 0 .0 1 θ JC (t) Thermal Response 1 Z P 0 .0 1 o te s : Z θ J C (t)= 0 .7 9 ℃ /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z θ J C(t) DM t1 s in g le p u ls e 1 E -5 1 E -4 1 E -3 t2 0 .0 1 0 .1 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] Transient Thermal Response Curve For JCS9N50FT 1 0 .2 0 .1 N 1 2 3 0 .0 5 0 .1 0 .0 2 0 .0 1 θ JC (t) Thermal Response D = 0 .5 P Z s in g le p u ls e o te s : Z θ J C (t)= 2 .6 ℃ /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z θ J C(t) DM t1 t2 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] 版本：201010C 7/10 R JCS9N50T 外形尺寸 PACKAGE MECHANICAL DATA TO-220C 版本：201010C 单位 Unit：mm 8/10 R JCS9N50T 外形尺寸 PACKAGE MECHANICAL DATA TO-220MF 版本：201010C 单位 Unit：mm 9/10 JCS9N50T R 注意事项 1.吉林华微电子股份有限公司的产品销售分 为直销和销售代理，无论哪种方式，订货 时请与公司核实。 2.购买时请认清公司商标，如有疑问请与公 司本部联系。 3.在电路设计时请不要超过器件的绝对最大 额定值，否则会影响整机的可靠性。 4.本说明书如有版本变更不另外告知 NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 联系方式 CONTACT 吉林华微电子股份有限公司 JILIN SINO-MICROELECTRONICS CO., LTD. 公司地址：吉林省吉林市深圳街 99 号 ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel： 86-432-64678411 Fax：86-432-64665812 Web Site：www.hwdz.com.cn 邮编：132013 总机：86-432-64678411 传真：86-432-64665812 网址：www.hwdz.com.cn 市场营销部 地址：吉林省吉林市深圳街 99 号 邮编：132013 电话： 86-432-64675588 64675688 64678411-3098/3099 传真: 86-432-64671533 版本：201010C MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 10/10