MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com BIDIRECTIONAL THYRISTOR SURGE SUPPRESSOR SERIES SURFACE MOUNT SMB AND AXIAL LEAD DO-41 FEATURES • UL94V-0 Flammability Classification • ESD Protection >40 kilovolts • Low Capacitance for T1/E1 Trunk and Line Card Applicatio • High Surge Current Capability(See Electrical Characteristics)• • Peak Off-State Voltage from 58 to 300 volt • Meet IEC100-4-4 & -5 Industry Requiremen • Provides Protection in Accordance with FCC Part 68,UL1459,Bellcore 1089,ITU-TK. 20 & K. 21 MECHANICAL DATA MECHANICAL DATA Case: JEDEC DO-41 Molded plastic over passivated junction Case: JEDEC DO214AC. Molded plastic over glass Terminals: Tin Plated Axial leads, solderable per passivated junction Terminal: Solder plated, solderable per MIL-STD-750 MIL-STD-750, Method 2026 Mounting Position: Any Weight: 0.012 ounce, 0.3 gram Method 2026 Standard Packaging: 12mm tape (EIA STD RS-481) Weight: 0.002 ounce, 0.061 gram MDE PART NUMBER MARKING CODE FOR AXIAL DO-41 PACKAGE MARKING REPETITIVE SWITCHING MINIMUM SWITCHING SURGE TYPICAL ONCODE FOR PEAK OFFHOLDING CURRENT RATINGS VOLTAGE CAPACITANCE STAGE Is STAGE IPP SMA CURRENT @100V/us @50V,1MHz CURRENT mA 10x1000 PACKAGE VOLTAGE dl/dt=1A/ms Vs pF IT VDRM µS IH VOLTS A VOLTS Amps mA P0640SAA P0640SAAL G1 58 77 150 800 35 1 P0720SAA P0720SAAL G2 65 88 150 800 35 1 P0800SAA P0800SAAL G3 75 98 150 800 35 1 P1100SAA P1100SAAL G4 90 130 150 800 35 1 P1300SAA P1300SAAL G5 120 160 150 800 35 1 P1500SAA P1500SAAL G6 140 180 150 800 35 1 P1800SAA P1800SAAL G7 160 220 150 800 35 1 P2300SAA P2300SAAL G8 190 260 150 800 35 1 P2600SAA P2600SAAL G9 220 300 150 800 35 1 P3100SAA P3100SAAL GA 275 350 150 800 35 1 P3500SAA P3500SAAL GB 300 400 150 800 35 1 P4000SAA P4000SAAL FZ 360 450 150 800 35 1 Maximum Off-State Current @VDRM : 5µA Maximum On-State Voltage @IT : 5volts For AXIAL devices,use suffix L (e.g. P3100AL) electrical charactics apply in both AXIAL and Surface Mounted Devices. 60 60 60 60 40 40 40 30 30 30 30 30 MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com BIDIRECTIONAL THYRISTOR SURGE SUPPRESSOR SERIES RATINGS AND CHARACTERISTIC CURVES Test Waveform Example 100 tf 10 µs Peak Value td = 1000 µs 75 Half Value: IPP / 2 = td 50 e 25 10 -t 1 µA tf IDRM - Peak Off-State Current - IPP - Peak Pulse Current - %IPP Fig.2 Typical Peak Off-State Current Vs Junction Temperature Fig.1 Pulse Wave Form Example 125 0.1 0.01 -40 t - Time-µs 0 0 500 1000 1500 2000 2500 0 3000 Fig.3 Typical On-State Current Vs On-State Voltage 80 120 Fig.4 Typical Holding Current Vs Junction Temperature 100 IT - On - State Current - A 40 tJ - Temperature - °C 2.5 IH / IH (tJ 25°C) 2 10 1.5 1 0.05 1 0 1 2 3 4 5 6 0 -40 7 VT - On - State Voltage - V 0 40 80 120 tJ - Temperature - °C Fig.5 Typical normalized Non-Repetitive On-State Current (ITSM) - Amps 1.15 VS Vs Junction Temperature 1.1 Normalized VS 1.05 1 0.95 0.9 0.85 0.8 -40 0 40 80 120 tJ - Temperature - °C Fig.6 On-State Current Vs Surge Current Duration 100 10 Supply Frequency: 60Hz Sinusoidal Load: Resistive Rms On-State Current(IT(RMS)): Maximum Rated Value at Specified Case Temperature 1 1 10 100 Surge Current Duration - Full Cycles Fig.7 V - I Characteristics Curve IPP ITSM IT IS IH VS IRM VT VRM 1000