HT82V733 240mA Audio Power Amp Features · High signal-to-noise ratio · Wide temperature operating range · High slew rate · No switch ON/OFF clicks · Low distortion · Low standby current · Large output voltage swing · Power off control · Excellent power supply ripple rejection · Direct drive speaker · Low power consumption · 8-pin DIP/SOP package · Short-circuit elimination General Description HT82V733 is an integrated class AB mono speaker driver contained in an SOP-8 package. The device is fabricated in a CMOS process and has been primarily developed for portable digital audio applications. Block Diagram Pin Assignment O U T N A u d In O U T P 1 0 R R R A M P 2 A M P 1 V R E F B IA S 1 8 V D D 2 7 O U T P V R E F 3 6 N C V S S 4 5 C E H T 8 2 V 7 3 3 8 D IP -A /S O P -A R V S S V D D O U T N A u d In C E Pin Description Pin No. Pin Name I/O Description 1 OUTN O Negative output 2 Aud In I Audio input 3 VREF O Speaker non-inverting input voltage reference 4 VSS ¾ Negative power supply, ground 5 CE I Chip enable, low active 6 NC ¾ Not connected 7 OUTP O Positive output 8 VDD ¾ Positive power supply Absolute Maximum Ratings Supply Voltage ...........................VSS-0.3V to VSS+5.5V Storage Temperature ............................-50°C to 125°C Input Voltage..............................VSS-0.3V to VDD+0.3V Operating Temperature...........................-20°C to 70°C Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Rev. 1.10 1 January 6, 2003 HT82V733 Electrical Characteristics Symbol Parameter VSS=0V, Ta=25°C Test Conditions VDD Conditions Min. Typ. Max. Unit Supplies VDD Supply Voltage ¾ ¾ 2.4 5.0 5.5 V VSS Negative Supply Voltage 5V ¾ ¾ 0 ¾ V ISTB Standby Current ¾ ¾ ¾ ¾ 1 mA 2 4 10 VP-P=500mV, fi=1kHz No load 4.8 12.3 23.5 VP-P=500mV, fi=1kHz No load 15 60 140 ¾ 12 ¾ ¾ 2.5 ¾ 5V Current ¾ 240 ¾ 3V Current ¾ 160 ¾ RL=16W 1.2 ¾ 4 5V RL=8W 1.8 ¾ 3.4 RL=4W 2.1 ¾ 3 RL=16W 0.6 ¾ 2.3 3V RL=8W 0.9 ¾ 1.9 RL=4W 1.1 ¾ 1.7 ¾ 71 ¾ ¾ 62 ¾ VO(p-p)=3.5V RL=8W ¾ -48 ¾ dB ¾ 3 ¾ % VO(p-p)=1.5V RL=8W ¾ -30 ¾ dB ¾ 3 ¾ % ¾ 60 ¾ ¾ 58 ¾ Vi=0, No load IDD Operating Current Ptot Total Power Dissipation ¾ ¾ mA mW DC Characteristics VI(OS) 5V ¾ Input Offset Voltage 3V IO VO PSRR Maximum Output Current (THD+N)/S<1% Output Voltage Swing (THD+N)/S<1% Power Supply Rejection Ratio 5V fi=100Hz; 3V Vripple(p-p)=100mV mV mA V V dB AC Characteristics 5V (THD+N)/S Total Harmonic Distortion Plus Noise-to-signal Ratio 3V 5V S/N ¾ Signal-to-noise Ratio 3V Rev. 1.10 2 dB January 6, 2003 HT82V733 Functional Description OUTP Rising Time (tR) When CE active low, the HT82V733 need rising time to output fully on OUTP pin. However, the rising time depends on C1. (*see the application circuits) C E O U T P tR Capacitor tR 0.1mF 1mF 4.7mF 10mF 2.2V 15ms 30ms 90ms 185ms 3V 15ms 30ms 90ms 185ms 4V 15ms 30ms 90ms 185ms Voltage For battery based applications, power consumption is a key issue, therefore the amplifier should be turned off when in the standby state. In order to eliminate any speaker sound bursts while turning the amplifier on, the application circuit, which will incorporate a capacitance value of C1, should be adjusted in accordance with the speaker s audio frequency response. A greater value of C1 will improve the noise burst while turning on the amplifier. The recommended operation sequence is: Turn On: audio1 signal standby (1/2 VDD) ® enable amplifier ® wait tR for amplifier ready ® audio1 output Turn Off: audio1 signal finished ® disable amplifier ® wait tR for amplifier off ® audio1 signal off A u d io 1 tR tR E N O U T If the application is not powered by batteries and there is no problem with amplifier On/Off issue, a capacitor value of 0.1uF for C1 is recommended. Application Circuits A u d io In 1 C 3 0 .1 m F R 2 O U T P Rev. 1.10 N C C E 5 6 7 3 D D 8 C 2 4 7 m F H T 8 2 V 7 3 3 V R E F C E C 1 1 m F 3 V O U T N V D D A u d io In S p e a k e r 4 January 6, 2003 HT82V733 Package Information 8-pin DIP (300mil) Outline Dimensions A 8 B 5 4 1 H C D a G E I F Symbol A Rev. 1.10 Dimensions in mil Min. Nom. Max. 355 ¾ 375 B 240 ¾ 260 C 125 ¾ 135 D 125 ¾ 145 E 16 ¾ 20 F 50 ¾ 70 G ¾ 100 ¾ H 295 ¾ 315 I 335 ¾ 375 a 0° ¾ 15° 4 January 6, 2003 HT82V733 8-pin SOP (150mil) Outline Dimensions 5 8 A B 4 1 C C ' G H D E Symbol Rev. 1.10 a F Dimensions in mil Min. Nom. Max. A 228 ¾ 244 B 149 ¾ 157 C 14 ¾ 20 C¢ 189 ¾ 197 D 53 ¾ 69 E ¾ 50 ¾ F 4 ¾ 10 G 22 ¾ 28 H 4 ¾ 12 a 0° ¾ 10° 5 January 6, 2003 HT82V733 Product Tape and Reel Specifications Reel Dimensions D T 2 A C B T 1 SOP 8N Symbol Description Dimensions in mm A Reel Outer Diameter 330±1.0 B Reel Inner Diameter 62±1.5 C Spindle Hole Diameter 13.0+0.5 -0.2 D Key Slit Width 2.0±0.15 T1 Space Between Flange 12.8+0.3 -0.2 T2 Reel Thickness 18.2±0.2 Rev. 1.10 6 January 6, 2003 HT82V733 Carrier Tape Dimensions P 0 D P 1 t E F W C D 1 B 0 P K 0 A 0 SOP 8N Symbol Description Dimensions in mm W Carrier Tape Width 12.0+0.3 -0.1 P Cavity Pitch 8.0±0.1 E Perforation Position 1.75±0.1 F Cavity to Perforation (Width Direction) 5.5±0.1 D Perforation Diameter 1.55±0.1 D1 Cavity Hole Diameter 1.5+0.25 P0 Perforation Pitch 4.0±0.1 P1 Cavity to Perforation (Length Direction) 2.0±0.1 A0 Cavity Length 6.4±0.1 B0 Cavity Width 5.20±0.1 K0 Cavity Depth 2.1±0.1 t Carrier Tape Thickness 0.3±0.05 C Cover Tape Width Rev. 1.10 9.3 7 January 6, 2003 HT82V733 Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 http://www.holtek.com.tw Holtek Semiconductor Inc. (Taipei Sales Office) 4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan Tel: 886-2-2655-7070 Fax: 886-2-2655-7373 Fax: 886-2-2655-7383 (International sales hotline) Holtek Semiconductor Inc. (Shanghai Sales Office) 7th Floor, Building 2, No.889, Yi Shan Rd., Shanghai, China 200233 Tel: 021-6485-5560 Fax: 021-6485-0313 http://www.holtek.com.cn Holtek Semiconductor Inc. (Shenzhen Sales Office) 5/F, Unit A, Productivity Building, Cross of Science M 3rd Road and Gaoxin M 2nd Road, Science Park, Nanshan District, Shenzhen, China 518057 Tel: 0755-8616-9908, 8616-9308 Fax: 0755-8616-9533 Holtek Semiconductor Inc. (Beijing Sales Office) Suite 1721, Jinyu Tower, A129 West Xuan Wu Men Street, Xicheng District, Beijing, China 100031 Tel: 010-6641-0030, 6641-7751, 6641-7752 Fax: 010-6641-0125 Holtek Semiconductor Inc. (Chengdu Sales Office) 709, Building 3, Champagne Plaza, No.97 Dongda Street, Chengdu, Sichuan, China 610016 Tel: 028-6653-6590 Fax: 028-6653-6591 Holmate Semiconductor, Inc. (North America Sales Office) 46729 Fremont Blvd., Fremont, CA 94538 Tel: 510-252-9880 Fax: 510-252-9885 http://www.holmate.com Copyright Ó 2003 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holtek¢s products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw. Rev. 1.10 8 January 6, 2003