HT82V735 330mW Stereo Audio Power Amp With Shutdown Features · Operating voltage: 2.4V~6.0V · Low power consumption · Very low standby current 0.5mA (Typ.) · Wide temperature operating range · High signal-to-noise ratio · Direct drive speaker · High slew rate · Shutdown function · Output power 330mW at 10% THD+N into 8W · 8-pin SOP package · Excellent power supply ripple rejection Applications · CD ROM DVD player · Headphone Amplifier · Notebook/Desktop PC · Microphone Pre-amplifier · Portable Audio Device · Discman/MP3 General Description HT82V735 is a class AB stereo earphone driver designed for portable digital audio application. Pin assignments and application circuits are compatible with LM4880 which is suitable for effective low cost applications. The HT82V735 can deliver a maximum of 330mW Output power to an 8W load with less than 10% (THD+N) from a 5V power supply. The very low standby current in shutdown mode contributes to the reduction of power consumption of battery-powered equipments. It provides 8-SOP package. Block Diagram Pin Assignment V D D O U T 2 O U T 1 + B + A IN 1 B IA S O U T 1 1 8 V D D IN 1 2 7 O U T 2 B IA S 3 6 IN 2 V S S 4 5 C E IN 2 V S S P o w e r D o w n H T 8 2 V 7 3 5 8 S O P -A C E Pin Description Pin No. Pin Name I/O Description 1 OUT1 O Channel 1 output pin 2 IN1 I Channel 1 Audio input 3 BIAS I Supports a voltage driver for internal bias 4 VSS 5 CE I Power down mode when held high, I (power down) =1mA 6 IN2 I Channel 2 Audio input 7 OUT2 O Channel 2 output pin 8 VDD ¾ Positive power supply Rev. 1.10 ¾ Negative power supply, ground 1 February 18, 2004 HT82V735 Absolute Maximum Ratings Supply Voltage .............................VSS-0.3V to VSS+6V Storage Temperature ...........................-50°C to 125°C Input Voltage .............................VSS-0.3V to VDD+0.3V Operating Temperature ..........................-20°C to 70°C Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Electrical Characteristics Symbol Parameter VSS=0V; fi=1kHz; RL=32W; Ta=25°C Test Conditions VDD Conditions Min. Typ. Max. Unit 2.4 ¾ 6 V Supplies VDD Supply Voltage ¾ IDD Supply Current 5V ¾ ¾ 10 ¾ mA IPD Power-down Current 5V ¾ ¾ 1 ¾ mA ¾ ¾ 10 ¾ mV ¾ 62 ¾ mA No load D.C. Characteristics VI(OS) Input Offset Voltage 5V IO Maximum Output Current 5V RO Output Resistance 5V VO Output Voltage Swing 5V (THD+N)/S<0.1% ¾ 230 ¾ mW RL=8W ¾ 0.66 ¾ 3 V RL=16W 0.38 ¾ 3.15 V RL=32W 0.18 ¾ 3.29 V PSRR Power Supply Rejection Ratio 5V CS=2.2mF, VRIPPLE=200VRMS, f=120Hz ¾ 66 ¾ dB XTALK Channel Separation 5V PO=200mW, RL=8W, CB=2.2mF ¾ 85 ¾ dB PO=200mW, RL=8W, f=1kHz ¾ 0.03 ¾ PO=120mW, RL=16W, f=1kHz ¾ 0.01 ¾ PO=75mW, RL=32W, f=1kHz ¾ 0.01 ¾ PO=30mW, RL=32W, f=1kHz ¾ 0.01 ¾ (THD+N)/S=0.1%, f=1kHz ¾ ¾ ¾ RL=8W ¾ 240 ¾ RL=16W ¾ 160 ¾ RL=32W ¾ 90 ¾ (THD+N)/S=10%, f=1kHz ¾ ¾ ¾ RL=8W ¾ 330 ¾ RL=16W ¾ 200 ¾ RL=32W ¾ 110 ¾ A.C. Characteristics (THD+N)/S Total Harmonic Distortion Plus Noise to Signal Ratio 5V 3.3V PO Rev. 1.10 Output Power 5V 2 % mW February 18, 2004 HT82V735 Symbol Test Conditions Parameter VDD S/N Signal to Noise Ratio 5V SR Slew Rate 5V ATT Power-down Attenuation 5V Conditions VIN=1VRMS, RL=8W ¾ 1kHz, 0dB Min. Typ. Max. Unit ¾ 92 ¾ dB ¾ 3 ¾ V/ms ¾ 70 ¾ dB 5 0 0 m 1 Typical Performance Characteristics THD+N vs. Output Power 1 0 V D D = 5 V F = 2 0 H z A V = - 1 5 2 1 0 .5 0 .2 T H D + N % 0 .1 0 .0 5 0 .0 2 0 .0 1 0 .0 0 5 R L = 8 W 0 .0 0 2 R L = 1 6 W R 0 .0 0 1 L = 3 2 W 0 .0 0 0 5 0 .0 0 0 2 0 .0 0 0 1 1 m 2 m 5 m 1 0 m 2 0 m 5 0 m 1 0 0 m 2 0 0 m O u tp u t P o w e r (W ) Rev. 1.10 3 February 18, 2004 HT82V735 V 5 0 D D = 5 V F = 1 k H z A V = - 1 2 0 1 0 5 2 T H D + N % 1 0 .5 0 .2 0 .1 0 .0 5 R = 8 W L = 1 6 W R L = 3 2 W 0 .0 2 0 .0 1 L R 0 .0 0 5 0 .0 0 2 0 .0 0 1 1 m 2 m 5 m 1 0 m 2 0 m 5 0 m 1 0 0 m 2 0 0 m 5 0 0 m 1 O u tp u t P o w e r (W ) 2 0 V D D = 5 V F = 2 0 k H z A V = - 1 5 2 1 R L = 1 6 W 0 .5 0 .2 T H D + N % 0 .1 0 .0 5 0 .0 2 0 .0 1 0 .0 0 5 R L = 8 W R L = 3 2 W 0 .0 0 2 0 .0 0 1 0 .0 0 0 5 0 .0 0 0 2 0 .0 0 0 1 1 m 2 m 5 m 1 0 m 2 0 m 5 0 m 1 0 0 m 2 0 0 m 5 0 0 m 1 O u tp u t P o w e r (W ) Rev. 1.10 4 February 18, 2004 HT82V735 Application Circuits + 5 V 2 2 0 p F + 0 .1 m F 1 5 k W + 1 0 0 m F 8 V in A 2 .2 m F 1 2 1 5 k W 5 3 H T 8 2 V 7 3 5 2 .2 m F 2 .2 m F V in B 7 6 2 2 0 m F + C E 2 2 0 m F + 1 5 k W 1 5 k W 4 2 2 0 p F Rev. 1.10 5 February 18, 2004 HT82V735 Package Information 8-pin SOP (150mil) Outline Dimensions 5 8 A B 4 1 C C ' G H D E Symbol Rev. 1.10 a F Dimensions in mil Min. Nom. Max. A 228 ¾ 244 B 149 ¾ 157 C 14 ¾ 20 C¢ 189 ¾ 197 D 53 ¾ 69 E ¾ 50 ¾ F 4 ¾ 10 G 22 ¾ 28 H 4 ¾ 12 a 0° ¾ 10° 6 February 18, 2004 HT82V735 Product Tape and Reel Specifications Reel Dimensions D T 2 A C B T 1 SOP 8N Symbol Description Dimensions in mm A Reel Outer Diameter 330±1.0 B Reel Inner Diameter 62±1.5 C Spindle Hole Diameter 13.0+0.5 -0.2 D Key Slit Width 2.0±0.5 T1 Space Between Flange 12.8+0.3 -0.2 T2 Reel Thickness 18.2±0.2 Rev. 1.10 7 February 18, 2004 HT82V735 Carrier Tape Dimensions P 0 D P 1 t E F W C D 1 B 0 P K 0 A 0 SOP 8N Symbol Description Dimensions in mm W Carrier Tape Width 12.0+0.3 -0.1 P Cavity Pitch 8.0±0.1 E Perforation Position 1.75±0.1 F Cavity to Perforation (Width Direction) 5.5±0.1 D Perforation Diameter 1.55±0.1 D1 Cavity Hole Diameter 1.5+0.25 P0 Perforation Pitch 4.0±0.1 P1 Cavity to Perforation (Length Direction) 2.0±0.1 A0 Cavity Length 6.4±0.1 B0 Cavity Width 5.20±0.1 K0 Cavity Depth 2.1±0.1 t Carrier Tape Thickness 0.3±0.05 C Cover Tape Width Rev. 1.10 9.3 8 February 18, 2004 HT82V735 Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 http://www.holtek.com.tw Holtek Semiconductor Inc. (Taipei Sales Office) 4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan Tel: 886-2-2655-7070 Fax: 886-2-2655-7373 Fax: 886-2-2655-7383 (International sales hotline) Holtek Semiconductor Inc. (Shanghai Sales Office) 7th Floor, Building 2, No.889, Yi Shan Rd., Shanghai, China 200233 Tel: 021-6485-5560 Fax: 021-6485-0313 http://www.holtek.com.cn Holtek Semiconductor Inc. (Shenzhen Sales Office) 43F, SEG Plaza, Shen Nan Zhong Road, Shenzhen, China 518031 Tel: 0755-8346-5589 Fax: 0755-8346-5590 ISDN: 0755-8346-5591 Holtek Semiconductor Inc. (Beijing Sales Office) Suite 1721, Jinyu Tower, A129 West Xuan Wu Men Street, Xicheng District, Beijing, China 100031 Tel: 010-6641-0030, 6641-7751, 6641-7752 Fax: 010-6641-0125 Holmate Semiconductor, Inc. (North America Sales Office) 46712 Fremont Blvd., Fremont, CA 94538 Tel: 510-252-9880 Fax: 510-252-9885 http://www.holmate.com Copyright Ó 2004 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holtek¢s products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw. Rev. 1.10 9 February 18, 2004