HVU187 Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator REJ03G0117-0500Z (Previous: ADE-208-054D) Rev.5.00 Oct.08.2003 Features • Low forward resistance. (rf = 5.5 Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVU187 D URP Pin Arrangement 1 D Cathode mark Mark 2 1. Cathode 2. Anode Rev.5.00, Oct.08.2003, page 1 of 4 HVU187 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 60 V Forward current IF 50 mA Power dissipation Pd 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 60 V Forward voltage Capacitance VF C — — — — 1.0 2.4 V pF IF = 10 mA VR = 0 V, f = 1 MHz Forward resistance rf 3.5 — 5.5 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 200 — — V C = 200 pF, Both forward and reverse direction 1 pulse. Note: 1. Failure criterion; IR ≥ 100 nA at VR = 60 V Rev.5.00, Oct.08.2003, page 2 of 4 HVU187 Main Characteristic 10–6 10–3 10–7 –5 Reverse current IR (A) Forward current IF (A) 10 10–7 10–9 10–8 10–9 10–10 10–11 10–11 10–12 10–13 0 0.2 0.4 0.6 0.8 1.0 10–13 0 20 40 60 80 100 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 104 f = 100MHz f = 1MHz Forward resistance rf (Ω) Capacitance C (pF) 10 1.0 0.1 1.0 10 100 103 102 10 1.0 –5 10 10–4 10–3 10–2 Reverse voltage VR (V) Forward current IF (A) Fig.3 Capacitance vs. Reverse voltage Fig.4 Forward resistance vs. Forward current Rev.5.00, Oct.08.2003, page 3 of 4 HVU187 Package Dimensions As of January, 2003 Rev.5.00, Oct.08.2003, page 4 of 4 0.9 ± 0.15 0 – 0.10 1.25 ± 0.15 1.7 ± 0.15 2.5 ± 0.15 0.3 ± 0.15 Unit: mm Package Code JEDEC JEITA Mass (reference value) URP Conforms — 0.004 g Sales Strategic Planning Div. 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