LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ ƽ We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION Device 3 Marking Shipping M1F 3000/Tape&Reel M1F 10000/Tape&Reel G1 3000/Tape&Reel G1 10000/Tape&Reel LMBT5550LT1G S-LMBT5550LT1G LMBT5550LT3G S-LMBT5550LT3G LMBT5551LT1G S-LMBT5551LT1G LMBT5551LT3G S-LMBT5551LT3G 1 2 SOT–23 MAXIMUM RATINGS 3 Rating Symbol Collector-Emitter Voltage Value VCEO MMBT5550 MMBT5551 Collector-Base Voltage Vdc 140 160 VCBO Emitter-Base Voltage Collector Current - Continuous 1 BASE Vdc 2 EMITTER 160 180 MMBT5550 MMBT5551 COLLECTOR Unit VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg -55 to +150 °C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD RqJA PD Rev.O 1/5 LESHAN RADIO COMPANY, LTD. LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 140 160 - 160 180 - 6.0 - - 100 50 100 50 - 50 60 80 60 80 20 30 250 250 - - 0.15 0.25 0.20 - 1.0 1.2 1.0 - 50 100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CEO LMBT5550 LMBT5551 V(BR)CBO LMBT5550 LMBT5551 Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Vdc Vdc V(BR)EBO Vdc ICBO LMBT5550 LMBT5551 LMBT5550 LMBT5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO nAdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Collector Emitter Cut-off (VCB = 10 V) (VCB = 75 V) LMBT5550 LMBT5551 LMBT5550 LMBT5551 LMBT5550 LMBT5551 hFE - VCE(sat) Both Types LMBT5550 LMBT5551 Vdc VBE(sat) Both Types LMBT5550 LMBT5551 Vdc ICES Both Types nA 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. Rev.O 2/5 LESHAN RADIO COMPANY, LTD. h FE, DC CURRENT GAIN (NORMALIZED) LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G 500 300 V CE = 1.0 V T J = +125°C 200 V CE = 5.0 V +25°C 100 –55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain 1.0 T J = 25°C 0.8 I C = 1.0 mA 10 mA 0.6 30 mA 100 mA 0.4 0.2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 10 1 1.0 T J = 25°C V CE = 30 V 0.8 10 –1 T J = 125°C I C= I 10 –2 10 –3 V, VOLTAGE (VOLTS) I C, COLLECTOR CURRENT (µA) 10 0 CES 75°C REVERSE FORWARD 25°C 10 –4 V BE(sat) @ I C /I B = 10 0.6 0.4 0.2 V CE(sat) @ I C /I B = 10 10 –5 0 –0.4 –0.3 –0.2 –0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 V BE , BASE–EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Cut–Off Region Figure 4. “On” Voltages Rev.O 3/5 100 LESHAN RADIO COMPANY, LTD. 2.5 T J = –55°C to +135°C 2 1.5 1.0 10.2 V V BB θ VC for V CE(sat) 0.5 V in 100 0 –0.5 0.25 mF 10 ms –1.0 1.0 2.0 3.0 5.0 10 V out 20 30 50 100 V in t r , t f <10 ns DUTY CYCLE = 1.0% –2.0 0.5 RC RB 5.1 k –1.5 0.2 0.3 3.0 k 30 V INPUT PULSE θ VB for V BE(sat) –2.5 0.1 V CC –8.8 V 1N914 100 θ V , TEMPERATURE COEFFICIENT (mV/°C) LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G Values Shown are for I C @ 10 mA I C , COLLECTOR CURRENT (mA) Figure 6. Switching Time Test Circuit Figure 5. Temperature Coefficients 100 1000 70 50 I C /I B = 10 T J = 25°C T J = 25°C 300 20 200 10 7.0 t, TIME (ns) 30 C ibo 5.0 C obo 3.0 t r @ V CC = 120 V t r @ V CC = 30 V 100 2.0 50 t d @ V EB(off) = 1.0 V 30 V CC = 120 V 20 10 1.0 0.2 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 0.2 0.3 0.5 20 1.0 2.0 3.0 5.0 10 20 30 50 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Turn–On Time 100 200 5000 I C /I B = 10 T J = 25°C t f @ V CC = 120 V 3000 2000 t f @ V CC = 30 V 1000 t, TIME (ns) C, CAPACITANCE (pF) 500 500 300 t s @ V CC = 120 V 200 100 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 9. Turn–Off Time Rev.O 4/5 LESHAN RADIO COMPANY, LTD. LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 5/5