L2SC3356LT1G S

DATA SHEET
LESHAN RADIO COMPANY, LTD.
L2SC3356LT1G
S-L2SC3356LT1G
DESCRIPTION
The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
ORDERING INFORMATION
Device
L2SC3356LT1G
S-L2SC3356LT1G
L2SC3356LT3G
S-L2SC3356LT3G
1
2
Shipping
Marking
R24
3000/Tape & Reel
R24
10000/Tape & Reel
SOT-23
FEATURES
• We declare that the material of product compliance with RoHS requirements.
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
to +150
C
65
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
A
VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
A
VEB = 1.0 V, IC = 0
DC Current Gain
hFE
82
170
Gain Bandwidth Product
fT
7
Feed-Back Capacitance
Cre**
0.55
S21e2
11.5
NF
1.1
Insertion Power Gain
Noise Figure
*
SYMBOL
270
VCE = 3 V, IC = 10 mA
GHz
1.0
2.0
VCE = 10 V, IC = 20 mA
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
dB
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
Pulse Measurement PW 350 s, Duty Cycle 2 %
* The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Driver Marking
L2SC3356LT1G=R24
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS (TA = 25 C)
L2SC3356LT1G;S-L2SC3356LT1G
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
50
0
100
f = 1.0 MHz
1
0.5
0.3
0
150
0.5
1
2
5
10
TA-Ambient Temperature-°C
VCB-Collector to Base Voltage-V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
200
20
30
15
VCE = 10 V
|S21e|2-Insertion Gain-dB
hFE-DC Current Gain
Cre-Feed-back Capacitance-pF
PT-Total Power Dissipation-mW
2
Free Air
100
50
20
10
5
VCE = 10 V
f = 1.0 GHz
10
0.5
1
5
10
0
0.5
50
1
5
10
50 70
IC-Collector Current-mA
IC-Collector Current-mA
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
Gmax
5.0
Gmax-Maximum Gain-dB
|S21e|2-Insertion Gain-dB
fT-Gain Bandwidth Product-MHz
10
3.0
2.0
1.0
0.5
0.3
20
|S21e|2
10
0.2
VCE = 10 V
0.1
0
0.5 1.0
5.0 10
IC-Collector Current-mA
30
0
VCE = 10 V
IC = 20 mA
0.1
0.2
0.4 0.6 0.81.0
2
f-Frequency-GHz
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L2SC3356LT1G;S-L2SC3356LT1G
NOISE FIGURE vs.
COLLECTOR CURRENT
|S21e|2-Insertion Gain-dB
6
NF-Noise Figure-dB
18
VCE = 10 V
f = 1.0 GHz
5
4
3
2
15
12
6
3
NF-Noise Figure-dB
7
NOISE FIGURE, FORWARD INSERTION
GAIN vs. COLLECTOR TO EMITTER VOLTAGE
5
f = 1.0 GHz
IC = 20 mA
4
2
|S21e|
3
2
NF
1
1
0
0.5
1
5
10
IC-Collector Current-mA
50 70
0
0
2
4
6
8
10
VCE-Collector to Emitter Voltage-V
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L2SC3356LT1G;S-L2SC3356LT1G
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4