2SC3356W High-Frequency Amplifier Transistors P b Lead(Pb)-Free COLLECTOR 3 3 DESCRIPTION: The 2SC3356W is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 1 BASE 1 2 2 EMITTER SOT-323(SC-70) FEATURES: * We declare that the material of product compliance with RoHS requirements. * Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @ Vce = 10 V, Ic = 7 mA, f = 1.0 GHz * High Power Gain MAG = 13 dB TYP. @ Vce = 10 V, Ic = 20 mA, f = 1.0 GHz Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 12 V Collector-Base Voltage VCBO 20 V Emitter-Base Voltage VEBO 3.0 V IC 100 mA Collector Current-Continuous Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation TA=25°C PD 150 mW Junction Temperature Range TJ -65 to +150 °C Storage Temperature Range Tstg -65 to +150 °C Device Marking 2SC3356W=24 W E I T RO N ht t p : / / w w w . w e i t r o n . c o m . tw 1/5 24-Jan-2013 WEITRON 2SC3356W Electrical Characteristics (TA=25°C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Collector Cutoff Current (V CB =10V, IE=0) ICBO - - 1.0 µA Emitter Cutoff Current (VEB =1V, IC=0) IEBO - - 1.0 µA DC Current Gain (IC=10mA, V CE=3V) hFE 82 170 270 fT - 7 Cre** - Insertion Power Gain (VCE = 10 V, IC =20mA, f = 1.0 GHz) |S21e | 2 Noise Figure (VCE = 10 V, IC =7mA, f = 1.0 GHz) NF Current-Gain-Bandwidth Product (VCE = 10 V, IC = 20mAdc) Feed-Back Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) - GHz 0.55 1.0 pF - 11.5 - dB - 1.1 2.0 dB * Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2% * The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. WE ITR O N h t t p : / / w w w. w e i t r o n . c o m . tw 2/5 24-Jan-2013 WEITRON 2SC3356W TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 50 0 100 f = 1.0 MHz 1 0.5 0.3 0 150 0.5 1 2 5 10 TA-Ambient Temperature-°C VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 200 20 30 15 VCE = 10 V |S21e|2-Insertion Gain-dB hFE-DC Current Gain Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-mW 2 Free Air 100 50 20 10 5 VCE = 10 V f = 1.0 GHz 10 0.5 1 5 10 0 0.5 50 1 5 10 50 70 IC-Collector Current-mA IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gmax 5.0 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB fT-Gain Bandwidth Product-MHz 10 3.0 2.0 1.0 0.5 0.3 20 |S21e|2 10 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 0 30 h t t p : / / w w w. w e i t r o n . c o m . tw 0.1 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz IC-Collector Current-mA WE ITR O N VCE = 10 V IC = 20 mA 3/5 24-Jan-2013 WEITRON 2SC3356W NOISE FIGURE vs. COLLECTOR CURRENT |S21e|2-Insertion Gain-dB 6 NF-Noise Figure-dB 18 VCE = 10 V f = 1.0 GHz 5 4 3 2 15 12 6 3 NF-Noise Figure-dB 7 NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 2 |S21e| 3 2 NF 1 1 0 0.5 1 5 10 50 70 0 IC-Collector Current-mA WE ITR O N h t t p : / / w w w. w e i t r o n . c o m . tw 0 2 4 6 8 10 VCE-Collector to Emitter Voltage-V 4/5 24-Jan-2013 WEITRON 2SC3356W SOT-323 Outline Demensions Unit:mm A SOT-323 B TOP VIEW C D E G H K J WE ITR O N h t t p : / / w w w. w e i t r o n . c o m . tw L M 5/5 Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 24-Jan-2013