L8550HRLT1G

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
L8550HPLT1G
Series
S-L8550HPLT1G
Series
FEATURE
ƽHigh current capacity in compact package.
ƽEpitaxial planar type.
ƽPNP complement: L8550H
3
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
2
SOT–23
DEVICE MARKING AND ORDERING INFORMATION
Device
COLLECTOR
3
Shipping
Marking
L8550HPLT1G
s-L8550HPLT1G
1HB
3000/Tape&Reel
L8550HPLT3G
s-L8550HPLT3G
1HB
10000/Tape&Reel
L8550HQLT1G
s-L8550HQLT1G
1HD
3000/Tape&Reel
L8550HQLT3G
s-L8550HQLT3G
1HD
10000/Tape&Reel
L8550HRLT1G
s-L8550HRLT1G
1HF
3000/Tape&Reel
L8550HRLT3G
s-L8550HRLT3G
1HF
10000/Tape&Reel
L8550HSLT1G
s-L8550HSLT1G
1HH
3000/Tape&Reel
L8550HSLT3G
s-L8550HSLT3G
1HH
10000/Tape&Reel
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
Max
Unit
VCEO
VCBO
VEBO
IC
-25
-40
V
V
-5
-1500
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Max
Unit
TA=25°C
225
mW
Derate above 25°C
1.8
mW/°C
556
°C/W
Alumina Substrate,(2) TA=25°C
300
mW
Derate above 25°C
2.4
mW/°C
R θJ A
417
°C/W
T j,T St g
-55 to +150
°C
Total Device Dissipation FR-5 Board,(1)
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJ A
PD
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.A 1/3
LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
Series
S-L8550HPLT1G
Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
-25
–
–
V
V(BR)EBO
-5
–
–
V
V(BR)CBO
-40
–
–
V
Collector Cutoff Current (VCB=-35V)
ICBO
–
–
-150
nA
Emitter Cutoff Current (VEB=-4V)
IEBO
–
–
-150
nA
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Emitter-Base Breakdown Voltage
(IE=-100 µΑ)
Collector-Base Breakdown Voltage
(IC=-100 µΑ)
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
IC=-100mA,VCE =-1V
H FE
100
-
600
-
-
-0.5
Collector-Emitter Saturation Voltage
(IC=-800mA,I B =-80mA)
NOTE :
VCE(S)
*
P
Q
hF E
100~200
150~300
R
200~400
V
S
300~600
Rev.A 2/3
LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
Series
S-L8550HPLT1G
Series
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
G
C
D
INCHES
DIM
B S
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.A 3/3