L9012PLT1G S

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
L9012PLT1G
FEATURE
Series
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
S-L9012PLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9012PLT1G
S-L9012PLT1G
L9012PLT3G
S-L9012PLT3G
L9012QLT1G
S-L9012QLT1G
L9012QLT3G
S-L9012QLT3G
L9012RLT1G
S-L9012RLT1G
L9012RLT3G
S-L9012RLT3G
L9012SLT1G
S-L9012SLT1G
L9012SLT3G
S- L9012SLT3G
Marking
12P
Shipping
3000/Tape&Reel
12P
10000/Tape&Reel
12Q
3000/Tape&Reel
3
1
2
12Q
10000/Tape&Reel
12R
3000/Tape&Reel
12R
10000/Tape&Reel
12S
3000/Tape&Reel
12S
10000/Tape&Reel
SOT-23 (TO-236AB)
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Collector-Emitter Voltage
VCEO
-20
V
Collector-Base Voltage
VCBO
-40
V
Emitter-Base Voltage
VEBO
-5
V
IC
-500
mAdc
Collector current-continuoun
Unit
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
Symbol
o
TA=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Max
Unit
225
mW
1.8
mW/oC
PD
R θ JA
556
o
C/W
PD
Total Device Dissipation
o
Alumina Substrate, (2) TA=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
300
mW
2.4
mW/oC
R θJA
417
Tj ,Tstg
-55 to +150
o
C/W
o
C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Emitter-Base Breakdown Voltage
(IE=-100µ A)
Collector-Base Breakdown Voltage
(IC=-100 µ A)
Collector Cutoff Current (VCB=-35V)
Emitter Cutoff Current (VBE=-4V)
V(BR)CEO
-20
-
-
V
V(BR)EBO
-5
-
-
V
V(BR)CBO
-40
-
-
V
I CBO
IEBO
-
-
-150
nA
-150
nA
Rev.O 1/2
LESHAN RADIO COMPANY, LTD.
L9012PLT1G Series
S-L9012PLT1G Series
ON CHARACTERISTICS
DC Current Gain
(IC=-50mA, VCE =-1V)
Collector-Emitter Saturation Voltage
(IC=-500mA,I B=-50mA)
NOTE:
*
H fe
VCE(S)
P
HFE
100~200
Q
100
-
600
-
-
-0.6
R
150~300 200~400
V
S
300~600
SOT-23 (TO-236AB)
A
L
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
3
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
B S
1
V
SOLDER PLATING.
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
K
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
J
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 2/2