RENESAS HVC376B

HVC376B
Variable Capacitance Diode for VCO
REJ03G0091-0200
Rev.2.00
Sep 05, 2005
Features
•
•
•
•
High capacitance ratio (n = 4.30 min) and good C-V linearity.
High Q circuit can be composed due to low series resistance. (rs = 0.8 Ω max)
To be usable at low voltage.
Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
HVC376B
Laser Mark
B9
Package Name
UFP
Pin Arrangement
Cathode mark
Mark
1
B9
2
1. Cathode
2. Anode
Rev.2.00 Sep 05, 2005 page 1 of 4
Package Code
(Previous Code)
PWSF0002ZA-A
(UFP)
HVC376B
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Symbol
VR
Junction temperature
Storage temperature
Tj
Tstg
Value
15
Unit
V
125
−55 to +125
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Reverse current
Capacitance
Symbol
IR1
Min
—
Typ
—
Max
10
Unit
nA
IR2
C0.2
—
39.5
—
—
100
44.5
pF
C1
C2.3
25.0
8.75
—
—
28.5
12.05
Capacitance ratio
C4
n1
4.80
4.30
—
—
6.80
—
—
VR = 4V, f = 1MHz
C1/C4
Series resistance
n2
rS
3.55
—
—
—
—
0.8
—
Ω
C0.2/C2.3
VR = 1 V, f = 470 MHz
Rev.2.00 Sep 05, 2005 page 2 of 4
Test Condition
VR =10 V
VR = 10 V, Ta = 60°C
VR = 0.2V, f = 1MHz
VR = 1V, f = 1MHz
VR = 2.3V, f = 1MHz
HVC376B
Main Characteristic
10–9
50
40
(pF)
10–10
Capacitance C
Reverse current IR (A)
f = 1MHz
10–11
30
20
10–12
10
10–13
0
4
8
12
16
20
1.0
10
Reverse voltage VR (V)
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Fig.2 Capacitance vs. Reverse voltage
0.6
f = 470MHz
0.5
Series resistance rS (Ω)
0
0.1
0.4
0.3
0.2
0.1
0
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Rev.2.00 Sep 05, 2005 page 3 of 4
HVC376B
Package Dimensions
JEITA Package Code
SC-79
RENESAS Code
Previous Code
PWSF0002ZA-A
UFP / UFPV
MASS[Typ.]
0.0016g
D
b
E
HE
c
l1
e1
A
l1
b2
Pattern of terminal position areas
Reference
Symbol
A
b
c
D
E
HE
b2
e1
l1
Rev.2.00 Sep 05, 2005 page 4 of 4
Dimension in Millimeters
Min
0.50
0.25
0.08
0.70
1.10
1.50
Nom
0.60
0.30
0.80
1.20
1.60
0.80
1.70
0.60
Max
0.70
0.35
0.18
0.90
1.30
1.70
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