HVB350BYP Silicon Epitaxial Planar Variable Capacitance Diode for VCO REJ03G0487-0100 (Previous: ADE-208-1420) Rev.1.00 Jan 11, 2005 Features • • • • High capacitance ratio. (n = 2.8 min) Low series resistance. (rs = 0.5 max) Good C-V linearity. CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVB350BYP Laser Mark V1 Package Code CMPAK-4 Pin Arrangement 4 3 4 3 V1 1 (Top View) Rev.1.00 Jan 11, 2005 page 1 of 4 2 1 (Top View) 2 1. Anode 2. Anode 3. Cathode 4. Cathode HVB350BYP Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Symbol VR Junction temperature Storage temperature Tj Tstg Value 15 Unit V 125 −55 to +125 °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol IR1 Min — Typ — Max 10 Unit nA Capacitance IR2 C1 — 15.5 — — 100 17.0 pF VR = 15 V, Ta = 60°C VR = 1 V, f = 1 MHz Capacitance ratio C4 n 5.0 2.8 — — 6.0 — — VR = 4 V, f = 1 MHz C1 / C4 Series resistance rs Note: 1. Per one device. — — 0.5 Ω VR = 1 V, f = 470 MHz Rev.1.00 Jan 11, 2005 page 2 of 4 Test Condition VR = 15 V HVB350BYP Main Characteristic 10-6 30 f=1MHz 25 10-8 Capacitance C (pF) Reverse current IR (A) 10 -7 10-9 10 -10 10-11 15 10 5 10-12 10-13 20 0 4 8 12 16 Reverse voltage VR (V) 0 0.1 20 Fig.1 Reverse current vs. Reverse voltage 1.0 Reverse voltage VR (V) 10 Fig.2 Capacitance vs. Reverse voltage 0 0.5 f=470MHz LF = ∆(LogC) / ∆(Log VR) Series resistance rS (Ω) 0.4 0.3 0.2 -0.5 -1.0 0.1 0 0.5 1.0 10 Reverse voltage VR (V) 30 Fig.3 Series resistance vs. Reverse voltage Rev.1.00 Jan 11, 2005 page 3 of 4 -1.5 0.1 1.0 Reverse voltage VR (V) Fig.4 LF vs. Reverse voltage 10 HVB350BYP Package Dimensions As of January, 2003 Unit: mm 2.0 ± 0.2 0.3 ± 0.05 0.3 ± 0.05 0 – 0.1 0.9 ± 0.1 (0.2) (0.65) (0.65) 1.3 ± 0.2 + 0.1 0.16– 0.06 2.1 ± 0.2 0.3 ± 0.05 (0.425) 1.25 ± 0.1 0.3 ± 0.05 (0.425) 1.3 ± 0.2 (0.65) (0.65) Package Code JEDEC JEITA Mass (reference value) Rev.1.00 Jan 11, 2005 page 4 of 4 CMPAK-4 — Conforms 0.006 g Sales Strategic Planning Div. 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