www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE(sat) B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types E-Series, Improved NPT³ technology 600 ...1200 V 600 V 600 V 1200 ... 1700 V IC 7 ... 20 A 7 ... 20 A 10 ... 20 A 20 ... 150 A 6 6 6 7 MOSFET Chips VDSS HiPerFETTM Power MOSFET PolarHT/HVTM Power MOSFET PolarHT/HVTM HiPerFET Power MOSFET N-Channel Depletion Mode MOSFET P-Channel Power MOSFET 70 ...1200 V 55 ... 600 V 100 ... 600 V 500 ...1000 V -100 ...-600 V RDS(on) 0.005 ... 4.5 Ω 0.015 ... 0.135 Ω 0.0075 ... 0.74 Ω 30 ... 110 Ω 0.06 ... 1.2 Ω Chip outlines 8-10 11 12-14 15 15 16-23 Bipolar Chips VRRM / VDRM Rectifier Diodes FREDs Low Leakage FREDs SONIC-FRDTM Diodes GaAs Schottky Diodes Schottky Diodes Phase Control Thyristors Fast Rectifier Diodes 800 ... 2200 V 200 ... 1200 V 200 ... 1200 V 600 ... 1800 V 100 ... 300 V 8 ... 200 V 800 ... 2200 V 1600 ... 1800 V IF(AV)M / IT(AV)M 12 ... 788 A 8 ... 244 A 9 ... 148 A 12 ... 150 A 3.5 ... 25 A 28 ... 145 A 15 ... 540 A 10 ... 26 A 24-25 26-28 29-30 31-32 33-34 35-38 39-40 41 Direct Copper Bonded (DCB) Ceramic Substrates What is DCB? 42 DCB Specification 43 IXYS reserves the right to change limits, test conditions and dimensions 1 Symbols and Definitions Cies Ciss -di/dt IC ID IF IF(AV)M IFSM IGT IR IRM IT IT(AV)M ITSM RDS(on) Rthjc rT Tcase Th tfi Tj, T(vj) Tjm, T(vj)m trr VCE(sat) VCES VDRM VDSS VF VR VRRM VT VT0 Input capacitance of IGBT Input capacitance of MOSFET Rate of decrease of forward current DC collector current Drain current Forward current of diode Maximum average forward current at specified Th Peak one cycle surge forward current Gate trigger current Reverse current Maximum peak recovery current Forward current of thyristor Maximum average on-state current of a thyristor at specified Th Maximum surge current of a thyristor Static drain-source on-state resistance Thermal resistance junction to case Slope resistance of a thyristor or diode (for power loss calculations) Case temperature Heatsink temperature Current fall time with inductive load Junction temperature Maximum junction temperature Reverse recovery time of a diode Collector-emitter saturation voltage Maximum collector-emitter voltage Maximum repetitive forward blocking voltage of thyristor Drain-source break-down voltage Forward voltage of diode Reverse voltage Maximum peak reverse voltage of thyristor or diode On-state voltage of thyristor Threshold voltage of thyristors or diodes (for power loss calculation only) Nomenclature IGBT and MOSFET Discrete IXSD 40N60A (Example) IX IXYS Die technology NPT3 IGBT HiPerFETTM Power MOSFET Fast IGBT IGBT with SCSOA capability Standard Power MOSFET Unassembled chip (die) E F G S T D 40 Current rating, 40 = 40 A N P N-channel type P-channel type 60 Voltage class, 60 = 600 V xx A Q Q2 P L -A B C Diode and Thyristor Chips C-DWEP 69-12 (Diode Example) C Package type D Chip function D = Silicon rectifier diode W Unassembled chip EP Process designator EP = Epitaxial rectifier diode N = Rectifier diode, cathode on top P = Rectifier diode, anode on top FN = Fast Rectifier diode, cathode on top FP = Fast Rectifier diode, anode on top 69 Registration No.: ISO/TS 16949: 001947 TS2 Registration No.: ISO 14001: 001947 UM Registration No.: OHSAS 18001: 001947 OH Chip and DCB Ceramic Substrates catalogue Edition 2008 © IXYS Semiconductor GmbH Current rating value of one chip in A Voltage class, 12 = 1200 V W-CWP 55-12/18 (Thyristor Example) W Package type Chip function C = Silicon phase control thyristor W Unassembled chip P Process designator P = Planar passivated chip cathode on top All Rights reserved As far as patents or other rights of third parties are concerned, liability is only assumed for chips and DCB parts per se, not for applications, processes and circuits implemented with components or assemblies. Terms of delivery and the right to change design or specifications are reserved. 2 -12 C Published by IXYS Semiconductor GmbH Marketing Communications Edisonstraße 15, D-68623 Lampertheim MOSFET Prime RDS(on) for standard MOSFET Low gate charge die Low gate charge die, 2nd generation PolarHT/HV Power MOSFET Linear Mode MOSFET IGBT No letter, low VCE(sat) Or A2, std speed type Or B2, high speed type Or C2, very high speed type 55 12/18 Current rating value of one chip in A Voltage class, 12/18 = 1200 up to 1800 V © 2008 IXYS All rights reserved General Informations for Chips When mounting Power Semiconductor chips to a header, ceramic substrate or hybrid thick film circuit, the solder system and the chip attach process are very important to the reliability and performance of the final product. This brochure provides several guidelines that describe recommended chip attachment procedures. These methods have been used successfully for many years at IXYS. Available Packaging Options IXYS offers various options. Please order from one of the following possibilities: Packaging Options Delivery form C-...* Chips in tray (Waffle Pack); Electrically tested T-...* Chips in wafer, unsawed; Bipolar = 5" (125 mm∅) wafer; or 6 " (150 mm∅) Electrically tested, rejects are inked W-...* Chips in wafer on foil, sawed; Bipolar = 5" (125 mm∅) wafer; or 6 " (150 mm∅) Electrically tested, rejects are inked ...* must be amended by the exact chip type designation. Package, Storage and Handling Chips should be transported in their original containers. All chip transfer to other containers or for assembly should be done only with rubber-tipped vacuum pencils. Contact with human skin (or with a tool that has been touched by hand) leaves an oily residue that may adversely impact subsequent chip attach or reliability. At temperatures below 104°F (40°C), there is no limitation on storage time for chips in sealed original packages. Chips removed from original packages should be assembled immediately. The wetting ability of the contact metallization with solder can be preserved by storage in a clean and dry nitrogen atmosphere. The IGBT and MOSFET Chips are electrostatic discharge (ESD) sensitive. Normal ESD precautions for handling must be observed. Prior to chip attach, all testing and handling of the chips must be done at ESD safe work stations according to DIN IEC 47(CO) 701. Ionized air blowers are recommended for added ESD protection. Contamination of the chips degrades the assembly results.Finger prints, dust or oily deposits on the surface of the chips have to be absolutely avoided. Rough mechanical treatment can cause damage to the chip. Electrical Tests The electrical properties listed in the data sheet presume correctly assembled chips. Testing of non-assembled chips requires the following precautions: • High currents have to be supplied homogeneously to the whole metallized contact area. • Kelvin probes must be used to test voltages at high currents • Applying the full specified blocking or reverse voltage may cause arcing across the glass passivated junction termination, because the electrical field on top of the passivation glass causes ionization of the surrounding air. This phenomenon can be avoided by using inert fluids or by increasing the pressure of the gas surrounding the chip to values above 30 psig (2 bars). General Rules for Assembly The linear thermal expansion coefficient of silicon is very small compared to usual contact metals. If a large area metallized silicon chip is directly soldered to a metal like copper, enormous shear stress is caused by temperature changes (e.g. when cooling down from the solder temperature or by heating during working conditions) which can disrupt the solder mountdown. If it is found that larger chips are cracking during mountdown or in the application, then the use of a low thermal expansion coefficient buffer layer, e.g. tungsten, molybdenum or Trimetal®, for strain relief should be considered. An alternative solution is to soft-solder these larger chips to DCB ceramic substrates because of their matching thermal expansion coefficients. IXYS reserves the right to change limits, test conditions and dimensions 3 Assembly Instructions MOS/IGBT Chips Recommended Solder System IXYS recommends a soft solder chip attach using a solder composition of 92.5 % Pb, 5 % Sn and 2.5 % Ag. The maximum chip attach temperature is 460°C for MOSFET and 360°C for HiPerFETTM and IGBT. Wire Bonding It is recommended to use wire of diameter not greater than 0.38 mm (0.015") for bonding to the source emitter and gate pads. Multiple wires should be used in place of thicker wire to handle high drain or emitter currents. See tables for number of recommended wire bonds. For smaller gate pads, 0.15 mm diameter wire is recommended. Thermal Response Testing To assure good chip attach processing, thermal response testing per MIL STD 750, Method 3161 or equivalent should be performed. Bipolar Chips Assembling IXYS bipolar semiconductor chips have a soft-solderable, multi-layer metallization (Ti/Ni/Ag) on the bottom side and, on top, either the same metallization scheme or an alumunium layer sufficiently thick for ultrasonic bonding. Note that the last layer of metal for soldering is pure silver. Regardless of their type all chips possess the same glass passivated junction termination system on top of the chip. For that reason they can be easily chip bonded or they can all be simply soldered to a flat contacting electrode in accordance to the General Rules on Page 3. All kinds of the usual soft solders with melting points below 660°F (350°C) can be used thanks to their pure silver top metal. Solders with high melting points are preferable due to their better power cycling capability, i.e. they are more resistant to thermal fatigue. Soldering temperature should not exceed 750°F (400°C). The maximum temperature should not be applied for more than five minutes. As already mentioned above the electrical properties quoted in the data sheets can only be obtained with properly assembled chips. This is only possible when all contact materials to be soldered together are well wetted and the solder is practically free of voids. A simple means to achieve good solder connections is to use a belt furnace running with a process gas containing at least 10 % Hydrogen in Nitrogen. Other approved methods are also allowed, provided that the above mentioned temperature-time-limits are not exceeded and temperature shocks above 930°F/min (500 K/min) are avoided. We do not recommend the use of fluxes for soldering! Ultrasonic Wire Bonding Chips provided with a thick aluminium layer are designed for ultrasonic wire bonding. Wire diameters up to 500 µm can be used dependent on chip types. Setting wires in parallel and application of stitch bonding lead to surge current ratings comparable to soldered chips. Coating Although the chips are glass passivated, they must be protected against arcing and environmental influences. The coating material that is in contact with the chip surface must have the following properties: - elasticity (to prevent mechanical stress) - high purity, no contamination with alkali metals - good adhesion to metals and glass passivation. 4 © 2008 IXYS All rights reserved FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes (FRED) Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling diodes. At increasing switching frequencies, the proper functioning and efficiency of the power switch, aside from conduction losses, is determined by the turn-off behavior of the diode (characterized by Qrr, IRM and trr - Fig. 1). The reverse current characteristic following the peak reverse current IRM is another very important property. The slope of the decaying reverse current dirr/dt results from design parameters; technology and diffusion of the FRED chip Fig. 2. In a circuit this current slope, in conjunction with parasitic inductances (e.g. connecting leads) causes over-voltage spikes and high frequency interference voltages.The higher the dirr/dt ("hard recovery" or "snap-off" behavior) the higher is the resulting additional stress for both the diode and the paralleled switch. A slow decay of the reverse current ("soft recovery" behavior), is the most desirable characteristic, and this is designed into all FRED. The wide range of available blocking voltages makes it possible to apply these FRED as output rectifiers in switch-mode power supplies (SMPS) as well as protective and free-wheeling diodes for power switches in inverters and welding power supplies. I -diF/dt -diF/dt IF trr ta 10% Qr IRM tb diR/dt 0.9 IRM 0.25 IRM t tfr V VFR VF t 100% 110% VR Fig. 1: Current and voltage during turn-on and turn-off switching of fast diodes Glasspassivation Rectifier Diode and Thyristor Chips The figures 3 a-c show cross sectional views of the diode and thyristor chips in the passivation area. All diode and thyristor chips (DWN, DWFN, CWP) are fabricated using separation diffusion processes so that all junctions terminate on the topside of the chip. Now the entire bottom surfaces of all chips are available for soldering onto a DCB or other ceramic substrate without a molybdenum strain buffer. The elimination of the strain buffer and its solder joint reduces thermal resistance and increases blocking voltage stability. The junction termination areas are passivated with glass, whose thermal expansion coefficient matches that of silicon. All silicon chips increasingly use planar technology with guard rings and channel stoppers to reduce electric fields on the chip surface. The contact areas of the chips have vapor deposited metal layers which contribute substantially to their high power cycle capability. All chips are processed on silicon wafers of 5" diameter and diced after a wafer sample test which auto-matically marks chips not meeting the electrical specification. The chip geometry is square or rectangular. Guard ring Anode Anode Epitaxie Schicht Epitaxy layern- n- + Substrat n+ n+ Substrate Cathode Kathode Metalization Fig. 2: Cross section of glassivated planar epitaxial diode chip (type DWEP) Fig. 3b) Fig. 3a-c Cross sections of Chips in the passivation area a) Diode chip, type DWN, DWFN b) Diode chip, type DWP, DWFP c) Thyristor chip, type CWP Feldring Guard ring Glaspassivierung Glasspassivation p n n+ Metallisierung Glasspassivation Fig. 3a) Metalization n+ -Emitter Fig. 3c) Glaspassivierung Glasspassivation Emitter Guardring Channel stopper p Metalization n p Metallisierung IXYS reserves the right to change limits, test conditions and dimensions Metalization 5 IXGD28N60B3-45 IXGD36N60B3-55 IXGD48N60B3-56 IXGD56N60B3-65 IXGD64N60B3-75 IXGD72N60B3-76 IXGD90N60B3-85 IXGD120N60B3-86 IXGD200N60B3-97 600V B3-Series IXGD28N60A3-45 IXGD36N60A3-55 IXGD48N60A3-56 IXGD56N60A3-65 IXGD64N60A3-75 IXGD72N60A3-76 IXGD90N60A3-85 IXGD120N60A3-86 IXGD360N60A3-97 TJM = 150°C Type GenX3 IGBTs 600V A3-Series 600 600 600 600 600 600 600 600 600 600 V VCES 1.8 1.8 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.5 1.4 1.3 1.3 1.3 1.3 1.3 1.3 1.3 V VCE(sat) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 A @ IC IX45 IX55 IX56 IX65 IX75 IX76 IX85 IX86 IX97 IX45 IX55 IX56 IX65 IX75 IX76 IX85 IX86 IX97 Chip type Insulated Gate Bipolar Transistors High Gain Low Gain 5.00 x 4.00 6.00 x 4.00 6.20 x 5.20 6.30 x 6.30 6.86 x 6.86 8.90 x 7.14 12.17 x 7.14 13.98 x 9.02 15.81 x 12.5 5.00 x 4.00 6.00 x 4.00 6.20 x 5.20 6.30 x 6.30 6.86 x 6.86 8.90 x 7.14 12.17 x 7.14 13.98 x 9.02 15.81 x 12.5 mm 197 236 244 248 270 351 479 550 622 x x x x x x x x x x x x x x x x x x 157 157 205 248 270 281 281 355 492 157 157 205 248 270 281 281 355 492 mils 197 236 244 248 270 351 479 550 622 Chip Size dimensions 10 mil x 3 15 mil x 3 15 mil x 3 15 mil x 4 15 mil x 3 15 mil x 4 12 mil x 4 12 mil x 6 15 mil x 6 10 mil x 3 15 mil x 3 15 mil x 3 15 mil x 4 15 mil x 3 15 mil x 4 12 mil x 4 12 mil x 6 15 mil x 6 Source bond wire recommended © 2008 IXYS All rights reserved IXGH28N60B3 IXGH36N60B3 IXGH48N60B3 IXGH56N60B3 IXGH64N60B3 IXGH72N60B3 IXGH90N60B3 IXGK120N60B3 IXGB200N60B3 IXGH28N60A3 IXGH36N60A3 IXGH48N60A3 IXGH56N60A3 IXGH64N60A3 IXGH72N60A3 IXGH90N60A3 IXGK120N60A3 IXGN360N60A3 Equivalent device data sheet 6 Low Gain 600 1200 600 V VCES 2.7 2.7 2.5 3.4 3.5 2.2 2.9 2.5 3.0 2.0 2.7 1.8 2.5 2.0 2.7 1.8 2.5 1.6 2.5 1.35 V VCE(sat) 10 16 20 20 20 7 7 12 12 20 20 20 20 20 20 20 20 20 20 20 A @ IC IX3Z IX4Z IX5Z IX4Z IX5Z IX2X IX2X IX3X IX3X IX4X IX4X IX5Y IX5Y IX62 IX62 IX7Y IX7Y IX9X IX9X IX9X Chip type x x x x x x x x x x x x x x x 3.17 3.17 3.60 3.60 4.70 4.70 6.59 6.59 6.52 6.52 7.16 7.16 10.60 10.60 10.60 3.60 x 3.60 4.30 x 5.20 6.20 x 5.20 4.30 x 5.20 6.20 x 5.20 3.17 3.17 4.39 4.39 5.65 5.65 6.59 6.59 8.65 8.65 8.89 8.89 14.20 14.20 14.20 mm mils 142 x 142 169 x 205 244 x 205 169 x 205 244 x 205 125 x 125 125 x 125 173 x 142 173 x 142 222 x 185 222 x 185 259 x 259 259 x 259 341 x 257 341 x 257 350 x 282 350 x 282 559 x 417 559 x 417 559 x 417 Chip Size dimensions 12 mil x 1 10 mil x 2 12 mil x 3 10 mil x 2 12 mil x 3 10 mil x 1 12 mil x 1 12 mil x 1 12 mil x 1 10 mil x 2 10 mil x 2 12 mil x 3 12 mil x 3 12 mil x 4 12 mil x 4 12 mil x 4 12 mil x 4 15 mil x 6 15 mil x 6 15 mil x 6 Source bond wire recommended Notes: 1. Recommended Gate bond wire: 5 mil for chip 2X; 8 mil for chips 3X, 3Z., 4X, 5Y, 5Z, 7Y; 12 mil for chip 9X 2. Dice are tested to Vsat limits as indicated. Maximum current 20A is limited by test equipment. 3. Recommended die processing thermal budget 300 deg. C for 5 minutes; maximum temperature should not to exceed 360 deg. C 4. This table lists active chips only IXSD10N60B2-3Z IXSD20N60B2-4Z IXSD30N60B2-5Z S-Series IXGD20N120B-4Z IXGD28N120B-5Z IXGD7N60B-2X IXGD7N60C-2X IXGD16N60B2-3X IXGD16N60C2-3X IXGD30N60B2-4X IXGD30N60C2-4X IXGD40N60B2-5Y IXGD40N60C2-5Y IXGD50N60B2-62 IXGD50N60C2-62 IXGD60N60B2-7Y IXGD60N60C2-7Y IXGD120N60B-9X IXGD120N60C2-9X IXGD200N60A2-9X TJM = 150°C Type G-Series Insulated Gate Bipolar Transistors High Gain © 2008 IXYS All rights reserved IXSP10N60B2 IXSH20N60B2 IXSH30N60B2 IXGH20N120B IXGH28N120B IXGP7N60B IXGP7N60C IXGH16N60B2 IXGH16N60C2 IXGH30N60B2 IXGH30N60C2 IXGH40N60B2 IXGH40N60C2 IXGH50N60B2 IXGH50N60C2 IXGH60N60B2 IXGH60N60C2 IXGK120N60B IXGK120N60C2 IXGN200N60A2 Equivalent device data sheet 7 • • • • • • • • • • • • • • • 75 100 20 25 50 75 100 150 A IC 2.30 2.30 2.80 2.00 1.90 1.90 1.90 2.15 2.60 2.60 2.75 2.20 2.10 2.10 2.10 2.40 VCE(sat) TVJ = 25°C 125°C typ. V typ. V NPT3 is an improved NPT design Square RBSOA Short circuit rated reduced VCEsat reduced switching losses soft switching for good EMC behaviour optimized for switching frequencies from 10 kHz up to 25 kHz ① Not for new design 1700 IXED75N170 IXED100N170 150 °C V 1200 TVJM VCES IXED15N120 ① IXED25N120 IXED50N120 IXED75N120 IXED100N120 IXED150N120 Type 75 100 20 25 50 75 100 150 A @IC 25.0 32.0 2.8 3.2 6.3 9.2 11.8 21.0 20 25 50 75 100 150 75 100 19.0 27.0 A @IC 1.8 2.3 4.7 7.8 10.1 15.0 Eon Eoff Inductive Load TVJ = 125 °C mJ mJ B Short Circuit Proof IGBT E-Series with improved NPT³ technology A 630 880 100 195 470 710 985 1110 nC Qg(on) L Tolerance 5 4 tbd 10 5 5 4 3 Internal Gate Resistance Ω • • 11.9 13.6 ±0.05 ±0.05 ±0.05 ±0.05 1.2 1.2 mm Si thickn. 8 1.2 210 ±15 1.2 1.1 130 ±20 1.2 1.2 1.2 1.2 1.2 11.9 13.6 1.1 1.2 1.2 1.2 1.2 1.2 4.6 6.5 9.0 11.0 12.6 12.0 5.7 6.6 9.1 11.0 12.6 12.0 © 2008 IXYS All rights reserved bondable • • • • • • M mm B mm L mm Dimensions A mm M 100 200 300 IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD88N20Q-82 IXFD120N20-9X IXFD180N20-9Y IXFD40N30Q-72 IXFD52N30Q-82 IXFD73N30Q-8Y IXFD90N30-9X IXFD130N30-9Y 0.095 0.075 0.050 0.040 0.028 0.035 0.020 0.014 0.018 0.011 0.007 0.007 0.005 IX72 IX82 IX8Y IX9X IX9Y IX82 IX9X IX9Y IX8X IX9X IX9Y IX9X IX9Y IX9X IX9Y Chip type 8.89 x 7.16 12.17 x 7.14 13.97 x 9.02 14.20 x 10.60 15.81 x 14.31 12.17 x 7.14 14.20 x 10.60 15.81 x 14.31 12.19 x 7.19 14.20 x 10.60 15.81 x 14.31 14.20 x 10.60 15.81 x 14.31 14.20 x 10.60 15.81 x 14.31 mm mils 350 479 550 559 623 x x x x x 282 281 355 417 563 479 x 281 559 x 417 623 x 563 480 x 283 559 x 417 623 x 563 559 x 417 623 x 563 559 x 417 623 x 563 Chip Size dimensions This table listgs active chips only. Please contact factory for older designs. 85 IXFD180N085-9X IXFD280N085-9Y 0.007 0.005 Ω V 70 RDS(ON) max. VDSS max. IXFD180N07-9X IXFD340N07-9Y Type HiPerFETTM Power MOSFET 15 mil x 3 15 mil x 4 12 mil x 6 15 mil x 6 12 mil x 12 15 mil x 4 15 mil x 6 12 mil x 12 15 mil x 4 15 mil x 6 12 mil x 12 15 mil x 6 12 mil x 12 15 mil x 6 12 mil x 12 Source bond wire recommended IXFH40N30Q IXFH52N30Q IXFK73N30Q IXFK90N30 IXFN130N30 IXFH88N20Q IXFK120N20 IXFN180N20 IXFH80N10Q IXFK170N10 IXFN230N10 IXFK180N085 IXFN280N085 IXFK180N07 IXFN340N07 Equivalent device data sheet © 2008 IXYS All rights reserved 9 This class of Power MOSFET uses IXYS' HDMOS process, which improves the ruggedness of the MOSFET while reducing the reverse recovery time of the fast intrinsic diode to 250 ns or less at elevated (150°C) junction temperature. The performance of the fast intrinsic diode is comparable to discrete high voltage diodes and is tailored to minimize power dissipation and stress in the MOSFET. The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling diodes" in a broad range of power switching applications. HiPerFETTM Power MOSFETs 0.350 0.250 0.170 0.140 0.130 0.090 0.090 IX72 IX82 IX8Y IX9X IX94 IX95 IX9Y IX82 IX84 IX8Y IX9X IX94 IX95 IX9Y Chip type 8.89 x 7.16 12.17 x 7.14 13.97 x 9.02 14.20 x 10.60 14.20 x 10.60 15.81 x 12.50 15.81 x 14.31 12.17 x 7.14 12.17 x 7.14 13.97 x 9.02 14.20 x 10.60 14.20 x 10.60 15.81 x 12.50 15.81 x 14.31 mm 350 479 550 559 559 623 623 x x x x x x x x x x x x x x 282 281 355 417 417 492 563 281 281 355 417 417 492 563 mils 479 479 550 559 559 623 623 Chip Size dimensions This table listgs active chips only. Please contact factory for older designs. 600 IXFD23N60Q-72 IXFD30N60Q-82 IXFD36N60Q-8Y IXFD44N60-9X IXFD52N60Q2-94 IXFD70N60Q2-95 IXFD60N60-9Y 0.150 0.150 0.110 0.100 0.085 0.070 0.060 Ω V 500 RDS(ON) max. VDSS max. IXFD40N50Q-82 IXFD40N50Q2-84 IXFD48N50Q-8Y IXFD55N50-9X IXFD66N50Q2-94 IXFD80N50Q2-95 IXFD80N50-9Y Type HiPerFETTM Power MOSFET 15 mil x 3 15 mil x 4 12 mil x 6 15 mil x 6 15 mil x 6 15 mil x 6 12 mil x 12 15 mil x 4 15 mil x 4 12 mil x 6 15 mil x 6 15 mil x 6 15 mil x 6 12 mil x 12 Source bond wire recommended IXFH23N60Q IXFH30N60Q IXFK36N60Q IXFK44N60 IXFK52N60Q2 IXFB70N60Q2 IXFN60N60 IXFH40N50Q IXFH40N50Q2 IXFK48N50Q IXFK55N50 IXFK66N50Q2 IXFB80N50Q2 IXFN80N50 Equivalent device data sheet © 2008 IXYS All rights reserved 10 The HiPerFETTM series of Power MOSFETs have an extended stress capability in applications where the intrinsic "free-wheeling diode" is used. Both static and dynamic dv/dt withstand capability have been improved to offer a significant margin of safety in high stress conditions found in many types of inductive load switching applications. HiPerFETTMs offer extended dv/dt ruggedness 1000 1200 IXFD6N100Q-5U IXFD10N100-7Y IXFD14N100Q2-7F IXFD14N100-8X IXFD21N100Q-8Y IXFD21N100F-8F IXFD24N100-9X IXFD24N100F-9F IXFD38N100Q2-95 IXFD36N100-9Y IXFD3N120-4U 4.500 2.000 1.200 1.000 0.750 0.520 0.520 0.420 0.420 0.280 0.270 0.500 0.330 0.220 IX4U IX5U IX7Y IX7F IX8X IX8Y IX8F IX9X IX9F IX95 IX9Y IX8Y IX9X IX9Y IX82 IX8Y IX9X IX94 IX95 IX9Y Chip type 5.77 x 4.96 6.81 x 6.74 8.89 x 7.16 8.89 x 7.16 12.19 x 7.19 13.97 x 9.02 13.97 x 9.02 14.20 x 10.60 14.20 x 10.60 15.81 x 12.50 15.81 x 14.31 13.97 x 9.02 14.20 x 10.60 15.81 x 14.31 12.17 x 7.14 13.97 x 9.02 14.20 x 10.60 14.20 x 10.60 15.81 x 12.50 15.81 x 14.31 mm 281 355 417 417 492 563 x x x x x x x x x x 265 282 282 283 355 355 417 417 492 563 227 x 195 268 350 350 480 550 550 559 559 623 623 550 x 355 559 x 417 623 x 563 x x x x x x mils 479 550 559 559 623 623 Chip Size dimensions This table listgs active chips only. Please contact factory for older designs. 900 IXFD24N90Q-8Y IXFD26N90-9X IXFD39N90-9Y 0.440 0.350 0.250 0.250 0.170 0.160 Ω V 800 RDS(ON) max. VDSS max. IXFD23N80Q-82 IXFD27N80Q-8Y IXFD34N80-9X IXFD38N80Q2-94 IXFD50N80Q2-95 IXFD44N80-9Y Type HiPerFETTM Power MOSFET 12 mil x 1 10 mil x 2 15 mil x 3 12 mil x 4 15 mil x 4 12 mil x 6 12 mil x 6 15 mil x 6 15 mil x 6 15 mil x 6 12 mil x 12 12 mil x 6 15 mil x 6 12 mil x 12 15 mil x 4 12 mil x 6 15 mil x 6 15 mil x 6 15 mil x 6 12 mil x 12 Source bond wire recommended IXFP3N120 IXFH6N100Q IXFH10N100 IXFH14N100Q2 IXFH14N100 IXFK21N100Q IXFK21N100F IXFK24N100 IXFK24N100F IXFB38N100Q2 IXFN36N100 IXFK24N90Q IXFK26N90 IXFN39N90 IXFH23N80Q IXFK27N80Q IXFK34N80 IXFK38N80Q2 IXFB50N80Q2 IXFN44N80 Equivalent device data sheet © 2008 IXYS All rights reserved 11 The newer ‘Q2-Class’ line combines the low gate charge advantages of Q-Class with a double-metal construction resul-ting in a new generation of MOSFETs with an intrinsic gate resistance an order of magnitude lower than conventional MOSFETs. The resulting reduction in switching losses allows large MOSFETs to operate up satisfactorily up to the multi-megahertz region. New ‘Q - class‘ HiPerFET MOSFETs (identified by the suffix letter Q) are the result of a revolutionary new chip design, which decreases the MOSFET‘s total gate charge Qg and the Miller capacitance Crss, while maintaining the ruggedness and fast switching intrinsic diode of the company‘s current HiPerFET product line. The result is a MOSFET with dramatically improved switching efficiencies and thus enabling higher frequency operation and smaller power supplies. ‘Q - Class’ and ‘Q2 - Class’ HiPerFETTM MOSFETs for Lower Gate Charge and Faster Switching 150 200 250 300 IXTD62N15P-5S IXTD96N15P-6S IXTD120N15P-7S IXTD150N15P-8S IXTD180N15P-88 IXTD50N20P-5S IXTD74N20P-6S IXTD96N20P-7S IXTD120N20P-8S IXTD140N20P-88 IXTD42N25P-5S IXTD64N25P-6S IXTD82N25P-7S IXTD100N25P-8S IXTD120N25P-88 IXTD36N30P-5S IXTD52N30P-6S IXTD69N30P-7S IXTD88N30P-8S IXTD102N30P-88 21 135 82 60 50 40 100 60 40 34 30 75 42 30 28 24 50 30 23 21 20 31 22 20 15 15 IX5S IX6S IX7S IX8S IX88 IX5S IX6S IX7S IX8S IX88 IX5S IX6S IX7S IX8S IX88 IX5S IX6S IX7S IX8S IX88 IX5S IX6S IX7S IX8S IX88 IX5S Chip type 6.20 x 5.20 6.86 x 6.86 8.9 x 7.14 11.12 x 7.14 13.34 x 7.14 6.20 x 5.20 6.86 x 6.86 8.9 x 7.14 11.12 x 7.14 13.34 x 7.14 6.20 x 5.20 6.86 x 6.86 8.9 x 7.14 11.12 x 7.14 13.34 x 7.14 6.20 x 5.20 6.86 x 6.86 8.9 x 7.14 11.12 x 7.14 13.34 x 7.14 6.20 x 5.20 6.86 x 6.86 8.9 x 7.14 11.12 x 7.14 13.34 x 7.14 6.20 x 5.20 mm mils 244 270 351 438 525 244 270 351 438 525 244 270 438 438 525 244 270 351 438 525 244 270 351 438 525 x x x x x x x x x x x x x x x x x x x x x x x x x 205 270 281 281 281 205 270 281 281 281 205 270 281 281 281 205 270 281 281 281 205 270 281 281 281 244 x 205 Chip Size dimensions This table listgs active chips only. Please contact factory for older designs. 55 100 mΩ V IXTD75N10P-5S IXTD110N10P-6S IXTD140N10P-7S IXTD170N10P-8S IXTD200N10P-88 RDS(ON) max. VDSS max. IXTD110N055P-5S Type PolarHTTM MOSFET 12 mil x 3 12 mil x 4 15 mil x 4 12 mil x 6 15 mil x 6 12 mil x 3 12 mil x 4 15 mil x 4 12 mil x 6 15 mil x 6 12 mil x 3 12 mil x 4 15 mil x 4 12 mil x 6 15 mil x 6 12 mil x 3 12 mil x 4 15 mil x 4 12 mil x 6 15 mil x 6 12 mil x 3 12 mil x 4 15 mil x 4 12 mil x 6 15 mil x 6 12 mil x 3 Source bond wire recommended IXTP 36N30P IXTQ 52N30P IXTQ 69N30P IXTQ 88N30P IXTK 102N30P IXTP 42N25P IXTQ 64N25P IXTQ 82N25P IXTQ 100N25P IXTK 120N25P IXTP 50N20P IXTQ 74N20P IXTQ 96N20P IXTQ 120N20P4 IXTK 140N20P IXTP 62N15P IXTQ 96N15P IXTQ 120N15P IXTQ 150N15P IXTK 180N15P IXTP 75N10P IXTQ 110N10P IXTQ 140N10P IXTQ 170N10P IXTK 200N10P IXTP 110N055P Equivalent device data sheet © 2008 IXYS All rights reserved 12 PolarHT MOSFETs feature a proprietary cell design and processing that has resulted in a MOSFET with a 30% reduction in RDS(on) per unit area along with a decrease in gate charge. IXYS has also reduced the wafer thickness, which substantially reduces thermal resistance. The combination of lower RDS(on), lower gate charge and higher power dissipation capability has resulted in a new family of MOSFETs, which will increase the cost effectiveness in SMPS applications. IXYS will also introduce HiPerFET versions in which the trr of the body diode is reduced to make them suitable for phase-shift bridges, motor control and Uninterruptible Power Supply applications. PolarHT TM MOSFETs for very low RDS(on) 200 250 300 500 IXFD74N20P-6S IXFD96N20P-7S IXFD120N20P-8S IXFD140N20P-88 IXFD100N25P-8S IXFD120N25P-88 IXFD52N30P-6S IXFD69N30P-7S IXFD88N30P-8S IXFD102N30P-88 IXFD12N50P-4J IXFD16N50P-5J IXFD22N50P-63 IXFD26N50P-6J IXFD30N50P-67 IXFD36N50P-7J IXFD44N50P-8J IXFD64N50P-9J IXFD80N50P-93 0.5 0.4 0.27 0.23 0.2 0.17 0.14 0.085 0.065 0.066 0.049 0.04 0.033 0.027 0.024 0.034 0.024 0.022 0.018 0.024 0.017 0.013 0.011 IX4J IX5J IX63 IX6J IX67 IX7J IX8J IX9J IX93 IX6S IX7S IX8S IX88 IX8S IX88 IX6S IX7S IX8S IX88 IX6S IX7S IX8S IX88 IX6S IX7S IX8S IX88 Chip type 5.00 x 5.00 6.20 x 5.20 6.30 x 6.30 6.86 x 6.86 8.65 x 6.52 8.91 x 7.15 11.13 x 7.15 10.60 x 10.60 14.20 x 10.60 6.86 x 6.86 8.9 x 7.14 11.12 x 7.14 13.34 x 7.14 11.12 x 7.14 13.34 x 7.14 6.86 x 6.86 8.9 x 7.14 11.12 x 7.14 13.34 x 7.14 6.86 x 6.86 8.9 x 7.14 11.12 x 7.14 13.34 x 7.14 6.86 x 6.86 8.9 x 7.14 11.12 x 7.14 13.34 x 7.14 mm x x x x x x x x 270 281 281 281 270 281 281 281 270 281 281 281 197 244 248 270 341 351 438 417 559 270 351 438 525 x x x x x x x x x x x x x 197 205 248 270 257 281 281 417 417 270 281 281 281 438 x 281 525 x 281 270 351 438 525 270 351 438 525 x x x x mils 270 351 438 525 Chip Size dimensions This table listgs active chips only. Please contact factory for older designs. 150 IXFD96N15P-6S IXFD120N15P-7S IXFD150N15P-8S IXFD180N15P-88 0.015 0.011 0.009 0.0075 mΩ V 100 RDS(ON) max. VDSS max. IXFD110N10P-6S IXFD140N10P-7S IXFD170N10P-8S IXFD200N10P-88 Type Polar HTTM HiPerFET Power MOSFET 12 mil x 2 12 mil x 2 12 mil x 4 15 mil x 2 12 mil x 4 12 mil x 4 15 mil x 4 12 mil x 6 12 mil x 6 12 mil x 4 15 mil x 4 12 mil x 6 15 mil x 6 12 mil x 6 15 mil x 6 12 mil x 4 15 mil x 4 12 mil x 6 15 mil x 6 12 mil x 4 15 mil x 4 12 mil x 6 15 mil x 6 12 mil x 4 15 mil x 4 12 mil x 6 15 mil x 6 Source bond wire recommended IXFP12N50P IXFP16N50P IXFH22N50P IXFH26N50P IXFH30N50P IXFH36N50P IXFH44N50P IXFK64N50P IXFK80N50P IXFH52N30P IXFH69N30P IXFH88N30P IXFK102N30P IXFH100N25P IXFK120N25P IXFH74N20P IXFH96N20P IXFH120N20P IXFK140N20P IXFH96N15P IXFH120N15P IXFH150N15P IXFK180N15P IXFH110N10P IXFH140N10P IXFH170N10P IXFK200N10P Equivalent device data sheet © 2008 IXYS All rights reserved 13 1000 1200 IXFD15N100P-76 IXFD20N100P-85 IXFD26N100P-86 IXFD32N100P-96 IXFD44N100P-97 IXFD38N100P-99 IXFD16N120P-85 IXFD20N120P-86 IXFD26N120P-96 IXFD30N120P-97 IXFD32N120P-99 0.95 0.57 0.46 0.35 0.31 0.76 0.57 0.39 0.32 0.22 0.21 1..44 1.1 0.85 0.72 0.6 0.5 0.4 0.27 0.19 0.14 IX85 IX86 IX96 IX97 IX99 IX76 IX85 IX86 IX96 IX97 IX99 IX4J IX5J IX63 IX6J IX67 IX7J IX8J IX9J IX93 IX9S IX4J IX5J IX63 IX6J IX67 IX7J IX8J IX9J IX93 Chip type 12.17 x 7.14 13.98 x 9.02 14.2 x 10.6 15.81 x 12.5 15.81 x 14.31 8.90 x 7.14 12.17 x 7.14 13.98 x 9.02 14.2 x 10.6 15.81 x 12.5 15.81 x 14.31 5.00 x 5.00 6.20 x 5.20 6.30 x 6.30 6.86 x 6.86 8.65 x 6.52 8.90 x 7.14 11.12 x 7.14 10.6 x 10.6 14.2 x 10.6 15.81 x 12.5 5.00 x 5.00 6.20 x 5.20 6.30 x 6.30 6.86 x 6.86 8.65 x 6.52 8.91 x 7.15 11.13 x 7.15 10.60 x 10.60 14.20 x 10.60 mm 479 550 559 622 622 351 479 550 559 622 622 197 244 248 270 341 351 438 417 559 622 x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x 281 355 417 492 563 281 281 355 417 492 563 197 205 248 270 257 281 281 417 417 492 197 205 248 270 257 281 281 417 417 mils 197 244 248 270 341 351 438 417 559 Chip Size dimensions This table listgs active chips only. Please contact factory for older designs. 800 IXFD7N80P-4J IXFD10N80P-5J IXFD12N80P-63 IXFD14N80P-6J IXFD16N80P-67 IXFD20N80P-7J IXFD24N80P-8J IXFD32N80P-9J IXFD44N80P-93 IXFD60N80P-9S 0.74 0.55 0.4 0.33 0.27 0.24 0.19 0.14 0.1 mΩ V 600 RDS(ON) max. VDSS max. IXFD10N60P-4J IXFD14N60P-5J IXFD18N60P-63 IXFD22N60P-6J IXFD26N60P-67 IXFD30N60P-7J IXFD36N60P-8J IXFD48N60P-9J IXFD64N60P-93 Type Polar HVTM HiPerFET Power MOSFET 12 12 15 15 15 15 12 12 15 15 15 12 12 12 15 12 12 15 12 12 12 mil mil mil mil mil mil mil mil mil mil mil mil mil mil mil mil mil mil mil mil mil x x x x x x x x x x x x x x x x x x x x x 4 6 6 6 6 4 4 6 6 6 6 2 2 4 2 4 4 4 6 6 8 12 mil x 2 12 mil x 2 12 mil x 4 15 mil x 2 12 mil x 4 12 mil x 4 15 mil x 4 12 mil x 6 12 mil x 6 Source bond wire recommended IXFH16N120P IXFN20N120P IXFN26N120P IXFB30N120P IXFN32N120P IXFH15N100P IXFH20N100P IXFK26N100P IXFN32N100P IXFN44N100P IXFN38N100P IXFP7N80P IXFP10N80P IXFH12N80P IXFH14N80P IXFH16N80P IXFH20N80P IXFH24N80P IXFN32N80P IXFN44N80P IXFN60N80P IXFP10N60P IXFH14N60P IXFH18N60P IXFH22N60P IXFH26N60P IXFH30N60P IXFH36N60P IXFK48N60P IXFK64N60P Equivalent device data sheet © 2008 IXYS All rights reserved 14 600 800 1000 1200 IXTD1R4N60P-11 IXTD2N60P-1J IXTD3N60P-2J IXTD4N60P-23 IXTD5N60P-3J IXTD7N60P-37 IXTD10N60P-4J IXTD14N60P-5J IXTD18N60P-63 IXTD22N60P-6J IXTD26N60P-67 IXTD30N60P-7J IXTD2N80P-2J IXTD4N80P-3J IXTD08N100P-1A IXTD1N100P-1C IXTD1R4N100P-2A IXTD2N100P-2C IXTD3N100P-3C IXTD06N120P-1A IXTD08N120P-1C IXTD1N120P-2A IXTD1R4N120P-2C IXTD2R4N120P-3C 32 25 20 13 7.5 20 15 11 7.5 4.8 6 4 9 4.7 2.8 1.9 1.6 1.1 10 0.55 0.42 0.35 0.23 0.24 6 3.5 2.5 1.3 1 0.8 0.5 0.4 0.27 0.23 0.2 0.17 0.14 Ω V 500 RDS(ON) max. VDSS max. IXTD1R6N50P-11 IXTD2R4N50P-1J IXTD3N50P-2J IXTD5N50P-23 IXTD6N50P-3J IXTD8N50P-37 IXTD12N50P-4J IXTD16N50P-5J IXTD22N50P-63 IXTD26N50P-6J IXTD30N50P-67 IXTD36N50P-7J IXTD44N50P-8J Type IX1A IX1C IX2A IX2C IX3C IX1A IX1C IX2A IX2C IX3C IX2J IX3J IX11 IX1J IX2J IX23 IX3J IX37 IX4J IX5J IX63 IX6J IX67 IX7J IX11 IX1J IX2J IX23 IX3J IX37 IX4J IX5J IX63 IX6J IX67 IX7J IX8J Chip type PolarHVTM Power MOSFET x x x x x x x x x x x x 1.91 2.29 2.79 2.79 3.60 4.20 5.00 5.20 6.30 6.86 6.52 7.15 2.29 x 2.29 2.54 x 2.54 2.79 x 2.79 3.89 x 2.79 4.39 x 3.6 2.29 x 2.29 2.54 x 2.54 2.79 x 2.79 3.89 x 2.79 4.39 x 3.6 2.79 x 2.79 3.60 x 3.60 1.91 2.29 2.79 3.69 3.60 4.20 5.00 6.20 6.30 6.86 8.65 8.91 1.91 x 1.91 2.29 x 2.29 2.79 x 2.79 3.69 x 2.79 3.60 x 3.60 4.20 x 4.20 5.00 x 5.00 6.20 x 5.20 6.30 x 6.30 6.86 x 6.86 8.65 x 6.52 8.91 x 7.15 11.13 x 7.15 mm 75 90 110 110 142 165 197 205 248 270 257 281 90 100 110 153 173 90 100 110 153 173 x x x x x x x x x x 90 100 110 110 142 90 100 110 110 142 110 x 110 142 x 142 75 x 90 x 110 x 153 x 142 x 165 x 197 x 244 x 248 x 270 x 341 x 351 x 75 90 110 110 142 165 197 205 248 270 257 281 281 mils 75 x 90 x 110 x 153 x 142 x 165 x 197 x 244 x 248 x 270 x 341 x 351 x 438 x Chip Size dimensions 10 10 10 12 12 10 10 10 12 12 mil mil mil mil mil mil mil mil mil mil x x x x x x x x x x 1 1 1 1 2 1 1 1 1 2 12 mil x 1 15 mil x 1 10 mil x 1 10 mil x 1 12 mil x 1 12 mil x 1 15 mil x 1 15 mil x 1 12 mil x 2 12 mil x 2 12 mil x 4 15 mil x 2 12 mil x 4 12 mil x 4 10 mil x 1 10 mil x 1 12 mil x 1 12 mil x 1 15 mil x 1 15 mil x 1 12 mil x 2 12 mil x 2 12 mil x 4 15 mil x 2 12 mil x 4 12 mil x 4 15 mil x 4 Source bond wire recommended IXTP06N120P IXTP08N120P IXTP1N120P IXTP1R4N120P IXTP2R4N120P IXTP08N100P IXTP1N100P IXTP1R4N100P IXTP2N100P IXTP3N100P IXTP2N80P IXTP4N80P IXTP1R4N60P IXTP2N60P IXTP3N60P IXTP4N60P IXTP5N60P IXTP7N60P IXTP10N60P IXTQ14N60P IXTQ18N60P IXTQ22N60P IXTH26N60P IXTH30N60P IXTP1R6N50P IXTP2R4N50P IXTP3N50P IXTP5N50P IXTP6N50P IXTP8N50P IXTP12N50P IXTP16N50P IXTQ22N50P IXTQ26N50P IXTQ30N50P IXTH36N50P IXTQ44N50P Equivalent device data sheet © 2008 IXYS All rights reserved This table listgs active chips only. Please contact factory for older designs. 15 30 110 IX1M IX1M Chip type 200 500 IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD10P60-7B 1.20 0.75 1.05 0.22 0.16 0.08 0.06 Ω V 100 RDS(ON) max. VDSS max. IXTD36P10-5B IXTD50P10-7B Type IX5B IX7B IX7B IX5B IX7B IX5B IX7B Chip type P-Channel Power MOSFET 500 1000 Ω V IXTD01N100D-1M RDS(ON) max. VDSS max. IXTD02N50D-1M Type 6.59 x 6.59 8.84 x 7.18 8.84 x 7.18 6.59 x 6.59 8.84 x 7.18 6.59 x 6.59 8.84 x 7.18 mm mils 259 x 259 348 x 283 348 x 283 259 x 259 348 x 283 259 x 259 348 x 283 mils 77 x 66 77 x 66 Chip Size dimensions 1.96 x 1.68 1.96 x 1.68 mm Chip Size dimensions N-Channel Depletion Mode MOSFET 12 mil x 3 15 mil x 3 15 mil x 3 12 mil x 3 15 mil x 3 12 mil x 3 15 mil x 3 Source bond wire recommended 3 mil x 1 3 mil x 1 Source bond wire recommended IXTH7P50 IXTH11P50 IXTH10P60 IXTH16P20 IXTH24P20 IXTH36P10 IXTH50P10 Equivalent device data sheet IXTP01N100D IXTP02N50D Equivalent device data sheet © 2008 IXYS All rights reserved 16 There are many applications in which IXTP01N100D and IXTP02N05D can be used: current regulators, off-line linear regulators, input transient voltage suppressors, input current inrush Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, requires a negative gate bias to turn it off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET characteristics. Their Rds(on) and breakdown voltage have a positive temperature coefficient, increasing the gate bias voltage increases the gate channel conductivity and so decreases Rds(on) to some extent and there is a usable intrinsic diode. IXYS Corporation’s IXTP01N100D is a depletion mode MOSFET rated at VDSS = 1000 Volts and ID = 100 mA and its RDS(on) = 110 Ohms at VGS = 0 Volt. The other depletion mode MOSFET, IXTP02N05D, is rated at VDSS = 500 Volts, ID = 200 mA, while its RDS(on) = 30 Ohms. The minimum required gate bias to turn them off is –5 Volts. They are both housed in TO-220 package and can dissipate 25 Watts at TC = 250C. Depletion Mode MOSFETs Dimensions in inch and [mm] (1" = 25.4 mm) IX1A IX1C IX1J IX1M SQ 0.054 [1.38] S 0.090 [2.29] 0.054 [1.38] 0.016 [0.41] I X 1 J G 0.012 [0.29] 0.090 [2.29] IX2A 0.043 [1.10] 0.016 [0.41] SQ IX11 S 0.075 [1.91] IX11 G 0.012 [0.29] 0.075 [1.91] IXYS reserves the right to change limits, test conditions and dimensions 17 Dimensions in inch and [mm] (1" = 25.4 mm) IX2C IX2J 0.070 [1.78] S IX2J 0.110 [2.79] 0.070 [1.78] 0.016 [0.41] SQ 0.048 [1.23] 0.020 [0.51] G 0.012 [0.29] 0.110 [2.79] IX23 0.090 [2.28] 0.046 [1.17] 0.075 [1.91] IX23 S G 0.110 [2.79] 0.020 [0.50] 0.024 [0.60] 0.010 [0.26] IX2X 0.012 [0.29] 0.099 [2.52] 0.153 [3.89] IX3C IX3J 0.095 [2.40] 0.142 [3.60] 0.025 [0.63] 0.024 [0.60] S IX 3J 0.013 [0.34] 0.047 [1.20] 0.095 [2.40] G 0.142 [3.60] 18 © 2008 IXYS All rights reserved Dimensions in inch and [mm] (1" = 25.4 mm) IX4J 0.164 [4.17] S 0.197 [5.00] S 0.164 [4.17] 0.024 [0.60] SQ IX3X IX4J G 0.013 [0.34] 0.128 [3.26] 0.197 [5.00] IX4U IX4X IX4Z IX45 IXYS reserves the right to change limits, test conditions and dimensions 19 0.031 [0.77] IX5J S G S 0.013 [0.33] 0.205 [5.20] 0.209 [5.30] 0.012 [0.30] IX5J 0.169 [4.30] IX5B 0.041 [1.03] Dimensions in inch and [mm] (1" = 25.4 mm) 0.046 [1.18] 0.049 [1.25] 0.244 [6.20] IX5S IX5U IX5Y IX5Z 20 © 2008 IXYS All rights reserved Dimensions in inch and [mm] (1" = 25.4 mm) IX55 IX56 IX6J IX6S 0.033 [0.84] 0.270 [6.86] SQ S S IX6J G 0.014 [0.34] 0.270 [6.86] IX62 IX63 0.086 [2.19] 0.129 [3.28] 0.206 [5.23] SQ S S G 0.257 [6.52] 0.169 [4.30] IX62A S 0.248 [6.30] 0.044 [1.12] 0.083 [2.10] 0.035 [0.88] 0.060 [1.51] IX63 G 0.014 [0.35] 0.086 [2.18] 0.158 [4.01] 0.014 [0.35] 0.032 [0.80] 0.341 [8.65] IXYS reserves the right to change limits, test conditions and dimensions SQ 0.248 [6.30] 21 Dimensions in inch and [mm] (1" = 25.4 mm) IX65 IX67 0.306 [7.78] IX67A S G S 0.126 [3.19] 0.223 [5.65] 0.257 [6.52] 0.039 [1.00] 0.032 [0.82] 0.014 [0.35] 0.341 [8.65] IX7B IX7J G 0.281 [7.15] S IX7J 0.142 [3.60] 0.039 [1.00] 0.033 [0.84] S 0.013 [0.34] 0.351 [8.91] IX7F 22 IX7S © 2008 IXYS All rights reserved Dimensions in inch and [mm] (1" = 25.4 mm) IX7Y ± 0.062 [ ± 1.57] S S 0.119 [3.02] 0.282 [7.16] IX7Y S G 0.050 [1.27] IX72 5X 0.048 [1.21] S S 0.016 [0.41] 0.119 [3.02] 0.233 [5.91] 0.350 [8.89] IX75 IX76 IX8F IX8J S G 0.281 [7.15] IX8J 0.132 [3.36] 0.048 [1.22] 0.048 [1.22] S 0.013 [0.33] 0.438 [11.13] IXYS reserves the right to change limits, test conditions and dimensions 23 Dimensions in inch and [mm] (1" = 25.4 mm) IX8S IX8X IX8Y IX82 IX84 IX85 24 © 2008 IXYS All rights reserved Dimensions in inch and [mm] (1" = 25.4 mm) IX86 IX88 IX9F IX9J 0.045 [1.14] 0.014 [0.35] S 0.417 [10.60] S IX9J G 0.014 [0.35] 0.045 [1.14] 0.417 [10.60] IX9X IXYS reserves the right to change limits, test conditions and dimensions IX9Y 25 Dimensions in inch and [mm] (1" = 25.4 mm) IX93 0.115 [2.92] 0.131 [3.31] IX94 0.134 [3.40] 0.099 [2.52] 0.013 [0.32] 0.417 [10.60] S 0.124 [3.15] S 0.193 [4.90] 0.016 [0.40] G IX93A G 0.013 [0.32] 0.047 [1.20] SQ 0.559 [14.20] IX95 IX97 IX99 26 © 2008 IXYS All rights reserved 1200 1800 1600 2200 DWN2 DWN9 DWN17 DWP17 DWN21 DWP21 DWN35 DWP35 DWN50 DWP50 DWN75 DWP75 DWN110 DWP110 DWN340 DWN108 DWN347 ① Mounted on DCB 800 1200 V VRRM DWN5 DWP5 Type 3.5 20.0 0.7 1.0 1.5 1.5 3.0 3.0 1.5 1.5 2.0 2.0 2.0 2.0 3.5 3.5 15.0 0.7 0.7 IR VRRM TVJM typ. mA Rectifier Diodes 150 °C TVJM 253 788 12 20 31 31 42 41 59 58 78 76 115 118 253 253 416 12 12 IF(AV)M rect. d=0.5 TC=100°C A 0.16 0.05 2.80 1.80 1.10 1.10 0.90 0.90 0.65 0.65 0.50 0.50 0.33 0.35 0.16 0.16 0.10 2.80 2.80 typ. K/W RthJC ① 1.19 1.10 1.13 1.30 1.36 1.39 1.35 1.37 1.25 1.25 1.33 1.34 1.27 1.28 1.18 1.19 0.93 1.14 1.14 25°C V VF TVJ = 1.12 1.01 1.05 1.26 1.35 1.37 1.33 1.36 1.20 1.22 1.31 1.33 1.23 1.25 1.12 1.12 1.09 1.05 1.05 125°C V 300 600 7 30 50 50 80 80 80 80 150 150 200 200 300 300 300 7 7 A @IF 3200 10500 150 300 320 320 500 500 630 630 900 900 1500 1500 3200 3200 5900 140 140 A IFSM 50 400 tbd tbd tbd tbd tbd tbd 50 50 50 50 50 50 50 50 300 tbd tbd © 2008 IXYS All rights reserved 45 275 tbd tbd tbd tbd tbd tbd 11 11 12 12 24 24 45 45 235 tbd tbd 6 50 tbd tbd tbd tbd tbd tbd 0.64 0.64 1 1 3 3 6 6 50 tbd tbd Reverse Recovery IRM @IF @-di/dt 25°C; VR=100V A A A/µs 27 • DWN108 DWN347 Tolerance • • • • • • • • • • • • • • • • • • • • • • • • • • • • • DWN2 DWN9 DWN17 DWP17 DWN21 DWP21 DWN35 DWP35 DWN50 DWP50 DWN75 DWP75 DWN110 DWP110 DWN340 • • • • DWN5 DWP5 Type solderable 58 16 1204 684 518 518 346 346 259 259 198 198 125 125 58 58 32 1123 1123 Chips per Wafer Rectifier Diodes bonderable -0.1 12.30 25.30 2.95 3.90 4.45 4.45 5.40 5.40 6.20 6.20 7.10 7.10 8.70 8.70 12.30 12.30 16.20 4.40 4.40 A mm -0.1 12.30 18.50 2.95 3.90 4.45 4.45 5.40 5.40 6.20 6.20 7.10 7.10 8.70 8.70 12.30 12.30 16.20 2.10 2.10 B mm Dimensions ±5% 0.315 0.315 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.265 mm Sithickn. © 2008 IXYS All rights reserved DWP DWN 28 600 1000 1200 DWEP8-06 DWEP12-06 DWEP15-06 DWEP23-06 DWEP25-06 DWEP35-06 DWEP55-06 DWEP75-06 DWEP3-10 DWEP10-10 DWEP18-10 DWEP20-10 DWEP30-10 DWEP50-10 DWEP70-10 DWEP6-12 DWEP9-12 DWEP17-12 DWEP19-12 DWEP29-12 DWEP49-12 DWEP69-12 ① Mounted on DCB 200 V VRRM DWEP27-02 DWEP37-02 DWEP77-02 Type 2.0 4.0 7.0 7.0 14.0 17.0 20.0 2.0 4.0 7.0 7.0 14.0 17.0 20.0 1.5 1.5 3.0 7.0 7.0 14.0 17.0 20.0 5.0 11.0 20.0 IR 0.8xVRRM 125°C mA 150 °C TVJM tbd 12 30 30 60 77 123 tbd 12 30 30 60 82 129 tbd 8 12 30 30 60 80 162 54 91 244 IF(AV)M rect. d=0.5 TC=100°C A 2.5 1.6 0.9 0.9 0.8 0.7 0.4 2.5 1.6 0.9 0.9 0.8 0.7 0.4 2.5 2.5 1.6 0.9 0.9 0.8 0.7 0.4 0.9 0.8 0.4 typ. K/W RthJC ① 2.55 2.55 2.60 2.50 2.35 2.19 1.77 2.65 2.65 2.43 2.35 2.24 2.12 1.89 1.65 1.45 1.65 1.53 1.53 1.73 1.58 1.31 1.09 1.03 0.98 TVJ = 25°C V FRED - Fast Recovery Epitaxial Diodes 2.19 2.19 2.19 2.19 1.94 1.89 1.54 2.09 2.09 2.04 1.99 1.79 1.68 1.57 1.48 1.31 1.48 1.33 1.38 1.48 1.38 1.12 0.84 0.87 0.81 V VF 150 150 150 150 150 125 125 150 150 150 150 150 125 125 150 150 150 150 150 150 125 125 150 150 150 @ °C 5 12 30 30 60 50 75 6 12 30 36 60 50 75 8 8 16 30 43 70 75 75 30 100 120 A @IF 80 75 200 200 500 500 800 40 75 200 200 500 500 800 50 100 100 250 300 550 600 1000 300 475 1200 A IFSM 7 5 7 7 7 8.6 20 7 5 7 7 7 6.1 14 5 5 5 5 5 5 5 20 4 4 7.5 IRM 25°C; VR=100V A 10 25 50 50 100 50 75 12 25 50 50 100 50 80 12 25 25 50 50 100 100 80 50 100 100 A @IF 40 50 40 40 40 40 40 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 tbd 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A @IF © 2008 IXYS All rights reserved 100 100 100 100 100 100 200 100 100 100 100 100 120 200 100 100 100 100 100 100 100 200 100 100 200 Reverse Recovery @-di/dt t rr VR=30V A/µs ns 50 50 100 100 200 200 350 50 50 100 100 200 200 350 50 50 50 100 100 200 200 350 100 200 350 A/µs 29 @-di/dt Tolerance DWEP6-12 DWEP9-12 DWEP17-12 DWEP19-12 DWEP29-12 DWEP49-12 DWEP69-12 DWEP3-10 DWEP10-10 DWEP18-10 DWEP20-10 DWEP30-10 DWEP50-10 DWEP70-10 DWEP8-06 DWEP12-06 DWEP15-06 DWEP23-06 DWEP25-06 DWEP35-06 DWEP55-06 DWEP75-06 DWEP27-02 DWEP37-02 DWEP77-02 Type • • • • • • • • • • • • • • solderable • • • • • • • • • • • • • • • • • • • • • • • • • 1851 990 531 518 257 230 151 1612 990 531 518 257 230 151 1612 1851 990 531 518 257 230 151 518 257 151 Chips per Wafer -0.1 2.40 3.25 5.50 4.45 6.20 8.65 8.91 3.60 3.25 5.50 4.45 6.20 8.65 8.91 3.60 2.40 3.25 5.50 4.45 6.20 8.65 8.91 4.45 6.20 8.91 A mm -0.1 2.40 3.25 3.50 4.45 6.20 4.95 7.22 1.80 3.25 3.50 4.45 6.20 4.95 7.22 1.80 2.40 3.25 3.50 4.45 6.20 4.95 7.22 4.45 6.20 7.22 B mm Dimensions ±5% 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 mm Sithickn. FRED - Fast Recovery Epitaxial Diodes bonderable © 2008 IXYS All rights reserved 30 400 600 DMLP04-04 DMLP06-04 DMLP10-04 DMLP15-04 DMLP20-04 DMLP23-06 • • • • • • • • • • DMLP04-03 DMLP06-03 DMLP10-03 DMLP15-03 DMLP20-03 DMLP04-04 DMLP06-04 DMLP10-04 DMLP15-04 DMLP20-04 Type 300 V VRRM solderable DMLP04-03 DMLP06-03 DMLP10-03 DMLP15-03 DMLP20-03 Type 250 300 350 400 500 tbd 1 1 1 1 1 tbd 2.1 2.4 3.3 3.9 4.45 2.1 2.4 3.3 3.9 4.45 mm 2.1 2.4 3.3 3.9 4.45 2.1 2.4 3.3 3.9 4.45 mm Dimensions A B tbd 1.35 1.35 1.35 1.35 1.35 1.25 1.3 1.28 1.25 1.28 VF at RT V 3675 2700 1430 1020 780 3675 2700 1430 1020 780 6" Number of Chips per Wafer 150 200 250 300 350 1 1 1 1 1 uA IR at 150°C uA Ir RT 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 mm Si thickness tbd 1 1.09 1 1 1 0.95 1.05 0.95 0.95 0.95 VF at 150°C V 30 10 15 30 40 60 10 20 30 40 60 @ IF rated current A tbd 100 150 300 400 550 100 150 300 400 550 A IFSM tbd 4 3.5 4 4 4 3 3 3 3 3 Reverse Recovery IRM A FRED - Fast Recovery Epitaxial Diodes with metal field plate bondable 30 10 20 30 40 60 10 20 30 40 60 A IF tbd 200 200 200 200 200 200 200 200 200 200 A/us di/dt Status 31 Development Available Available Available Available Available Available Available Available Available Available © 2008 IXYS All rights reserved tbd 45 45 45 45 45 35 35 35 35 35 ns trr 300 400 600 1200 DWLP4-03 DWLP8-03 DWLP15-03 DWLP15-03A DWLP23-03 DWLP23-03A DWLP55-03 DWLP75-03 DWLP8-04 DWLP15-04 DWLP23-04 DWLP55-04 DWLP75-04 DWLP150-04 DWLP4-06 DWLP8-06A DWLP8-06B DWLP15-06A DWLP15-06B DWLP23-06A DWLP23-06B DWLP55-06 DWLP75-06 DWLP1-12 DWLP8-12 DWLP15-12 DWLP23-12 DWLP55-12 DWLP75-12 ① Mounted on DCB 200 V VRRM DWLP4-02 DWLP15-02 DWLP15-02B DWLP25-02 Type 0.20 0.25 0.50 1.00 2.50 4.00 0.20 0.25 0.25 0.50 0.50 1.00 2.00 2.50 4.00 0.25 0.50 1.00 2.50 4.00 8.50 0.20 0.25 0.50 0.50 1.00 1.00 2.50 4.00 0.20 0.50 0.50 0.20 IR VRRM TVJM mA 150 °C TVJM tbd 9 14 29 48 78 11 12 11 21 16 40 30 62 99 14 24 46 67 117 148 13 15 25 29 51 41 72 117 14 29 25 46 IF(AV)M rect. d=0.5 TC=100°C A 25.0 2.50 1.60 0.90 0.65 0.40 2.80 2.50 2.50 1.60 1.60 0.90 0.90 0.65 0.40 2.50 1.60 0.90 0.65 0.40 0.35 2.80 2.50 1.60 1.60 0.90 0.90 0.65 0.40 2.80 1.60 1.60 0.90 typ. K/W RthJC ① 2.14 2.61 2.45 2.68 2.54 2.56 1.97 1.75 2.34 1.87 2.38 1.54 2.45 1.92 1.93 1.40 1.40 1.43 1.38 1.39 1.38 1.63 1.45 1.44 1.26 1.19 1.49 1.42 1.43 1.21 0.99 1.13 1.10 1.69 1.65 1.68 1.71 1.59 1.71 1.28 1.22 1.53 1.23 1.44 1.17 1.53 1.23 1.24 0.97 0.98 1.06 0.99 1.03 1.12 1.07 1.01 1.02 0.93 0.84 1.07 0.99 0.95 0.88 0.82 0.84 0.85 VF TVJ = 25°C 150°C V V 1 6 12 30 60 100 5 6 6 12 12 30 30 60 100 6 12 30 60 100 300 5 6 12 12 30 30 60 100 5 12 12 30 A @IF Low Leakage Fast Recovery Epitaxial Diodes 20 40 90 200 500 800 40 50 50 110 110 250 250 600 1000 60 110 300 600 1000 1200 40 60 110 110 300 300 600 1000 80 140 140 325 A IFSM 2.3 5.0 5.7 6.7 7.0 7.4 1.8 2.6 1.4 2.9 1.5 3.5 2.0 4.0 4.5 1.4 2.5 2.5 3.5 4.0 9.5 1.4 1.0 1.4 1.4 3.0 1.9 2.8 3.3 1.2 2.4 1.1 2.0 IRM 25°C; VR=100V A 1 12 25 50 130 200 10 12 12 25 25 50 50 130 200 12 25 50 130 200 200 10 12 25 25 50 50 130 200 10 25 25 50 tbd 40 40 40 40 40 30 35 30 35 35 35 30 35 35 30 30 30 30 30 30 30 30 30 30 30 25 30 30 25 25 25 25 tbd 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A @IF © 2008 IXYS All rights reserved 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 Reverse Recovery @IF @-di/dt trr VR=30V A A/µs typ. ns tbd 50 100 200 300 400 50 50 50 100 100 200 200 300 400 50 100 200 300 400 800 50 50 100 100 200 200 300 400 50 100 100 200 A/µs @-di/dt 32 Tolerance • • • • DWLP4-06 DWLP8-06A DWLP8-06B DWLP15-06A DWLP15-06B DWLP23-06A DWLP23-06B DWLP55-06 DWLP75-06 DWLP1-12 DWLP8-12 DWLP15-12 DWLP23-12 DWLP55-12 DWLP75-12 • • • DWLP8-04 DWLP15-04 DWLP23-04 DWLP55-04 DWLP75-04 DWLP150-04 • • • • • • • • • • • • • • • • • • • • • • • • • • • • • DWLP4-03 DWLP8-03 DWLP15-03 DWLP15-03A DWLP23-03 DWLP23-03A DWLP55-03 DWLP75-03 • • • • • DWLP4-02 DWLP15-02 DWLP15-02B DWLP25-02 Type solderable 4545 1612 990 531 230 151 1960 1612 1612 990 990 531 531 230 151 1612 990 531 230 151 74 1960 1612 990 990 531 531 230 151 1960 990 990 518 Chips per Wafer -0.1 1.52 3.60 3.25 5.50 8.65 8.91 3.00 3.60 3.60 3.25 3.25 5.50 5.50 8.65 8.91 3.60 3.25 5.50 8.65 8.91 13.00 3.00 3.60 3.25 3.25 5.50 5.50 8.65 8.91 3.00 3.25 3.25 4.45 A mm -0.1 1.52 1.80 3.25 3.50 4.95 7.22 1.80 1.80 1.80 3.25 3.25 3.50 3.50 4.95 7.22 1.80 3.25 3.50 4.95 7.22 9.77 1.80 1.80 3.25 3.25 3.50 3.50 4.95 7.22 1.80 3.25 3.25 4.45 B mm Dimensions ±5% 0.46 0.46 0.46 0.46 0.46 0.46 0.40 0.40 0.40 0.40 0.40 0.40 0.40 0.40 0.40 0.38 0.38 0.38 0.38 0.38 0.38 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 0.37 mm Sithickn. Low Leakage Fast Recovery Epitaxial Diodes bonderable © 2008 IXYS All rights reserved 33 1600-1800 4000-4500 DWHP6 DWHP15 DWHP25 DWHP55 DWHP68 DWHP150 DWHP200 DWHP205 1200 DWHP4 DWHP10 DWHP14 DWHP16 DWHP23 DWHP56 slow DWHP69 slow DWHP150 slow DWHP56 DWHP69 DWHP150 DWHP200 tbd 5 16 42 95 200 365 550 10 5 10 10 50 60 100 150 125 200 325 500 1 1 3 5 10 10 35 60 100 150 250 125 200 325 500 uA V 600 Ir RT VRRM DWHP0.5 slow DWHP0.5 DWHP4 DWHP10 DWHP14 DWHP16 DWHP23 DWHP56 slow DWHP69 slow DWHP150 slow DWHP200 slow DWHP56 DWHP69 DWHP150 DWHP200 Type tbd 0.15 0.35 1 2 4 7.5 11 1 1.5 3.5 3.5 5 8 12 20 12 20 30 45 0.1 0.1 1 1.5 3.5 3.5 5 8 12 20 30 12 20 30 45 mA IR at 125°C tbd 2.61 2.89 2.65 2.73 2.71 2.57 2.63 2.45 2.58 2.45 2.45 2.59 2.04 2.04 2.04 2.42 2.44 2.4 2.46 2 3.5 2.25 2.38 2.26 2.26 2.39 1.54 1.55 1.55 1.55 2.18 2.2 2.16 2.24 VF at RT V tbd 2.61 2.89 2.65 2.73 2.71 2.57 2.63 2.18 2.28 2.01 2.2 2.29 1.76 1.83 1.69 2.14 2.16 2.13 2.18 2.22 3.55 2.03 2.14 2.05 2.05 2.16 1.43 1.45 1.45 1.44 1.95 1.97 1.93 2.01 VF at 150°C V SONIC diodes with glass passivation tbd 2 10 20 40 60 100 150 5 10 20 20 30 60 100 150 60 100 150 250 1.2 1.2 5 10 20 20 30 60 100 150 250 60 100 150 250 @ IF rated current A tbd 25 80 200 450 650 1100 1600 35 65 135 135 180 550 750 1400 430 930 1130 1800 tbd tbd 40 80 150 150 200 550 750 1400 1950 400 500 800 1200 A IFSM tbd 1.6 8.5 16.5 33 50 125 200 4.2 8.5 19 19 25 65 100 150 51 83 115 170 0.25 0.2 2 4 8 8 12 33 55 82 140 24 40 60 100 Reverse Recovery IRM A tbd 2 10 20 40 60 150 250 5 10 20 20 30 60 100 150 60 100 150 250 0.5 0.5 5 10 20 20 30 60 100 150 250 60 100 150 250 A IF tbd 20 100 200 400 600 1500 2500 150 350 750 750 1000 1800 2500 4000 2500 4000 3500 6000 10 10 100 200 400 400 600 1200 2000 3000 5000 1200 2000 3000 5000 A/us di/dt Status 34 Development Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Development Development Development Development © 2008 IXYS All rights reserved tbd 150 150 150 150 150 150 150 75 75 75 75 75 65 100 150 75 75 125 125 50 30 35 35 35 35 35 60 60 60 60 35 35 35 35 ns trr • • • • • • • • • • • • • • • • • DWHP4-12 DWHP10-12 DWHP14-12 DWHP16-12 DWHP23-12 DWHP56-12 DWHP69-12 DWHP150-12 DWHP200-12 DWHP6-16/18 DWHP15-16/18 DWHP25-16/18 DWHP55-16/18 DWHP68-16/18 DWHP150-16/18 DWHP200-16/18 DWHP205-40/45 • - Available on request • solder temperature below 350 °C • • • • • • • • • • DWHP0.5-06 DWHP4-06 DWHP10-06 DWHP14-06 DWHP16-06 DWHP23-06 DWHP56-06 DWHP69-06 DWHP150-06 DWHP200-06 Type solderable 14.3 2.4 3.25 4.45 8.65 8.91 11.4 12.4 3.6 2.95 4.8 3.95 5.5 8.65 8.91 11.4 12.4 1 3.6 2.95 4.8 3.95 5.5 8.65 8.91 11.4 12.4 mm 14.3 2.4 3.25 4.45 4.95 7.22 9.4 12.4 1.8 2.95 3.3 3.95 3.5 4.95 7.22 9.4 12.4 1 1.8 2.95 3.3 3.95 3.5 4.95 7.22 9.4 12.4 mm Dimensions A B 45 1841 988 517 231 152 88 59 1622 1204 657 668 532 231 152 88 59 10777 1622 1204 657 668 532 231 152 88 59 Number of Chips per Wafer 0.58 0.265 0.265 0.265 0.265 0.265 0.265 0.265 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 mm Si thickness SONIC diodes with glass passivation bondable © 2008 IXYS All rights reserved 35 180 250 300 DWGS04-018A DWGS04-018C DWGS10-018A DWGS10-018C DWGS20-018A DWGS20-018C DWGS04-025A DWGS04-025C DWGS10-025A DWGS10-025C DWGS20-025A DWGS20-025C DWGS04-03A DWGS04-03C DWGS10-03A DWGS10-03C DWGS20-03C 175 °C V 100 TVJM VRRM DWGS04-01A DWGS10-01C Type 3.5 6.0 8.0 17.5 25.0 3.9 7.8 9.0 14.0 13.0 20.0 5.0 8.4 11.0 15.0 17.0 23.0 8.5 25.0 IF(AV)M rect. d=0.5 TC=90°C A GaAs Schottky Diodes 10.12 10.12 5.20 5.20 3.70 10.12 10.12 5.20 5.20 3.70 3.70 10.12 10.12 5.20 5.20 3.70 3.70 10.12 5.20 typ. K/W RthJC 1.60 1.51 1.60 1.56 1.56 1.30 1.26 1.25 1.26 1.25 1.24 0.86 1.25 0.80 1.21 0.80 1.24 0.62 0.99 1.60 1.10 1.60 1.11 1.14 1.30 1.05 1.25 1.07 1.25 1.10 0.85 1.02 0.80 1.04 0.80 1.07 0.54 0.94 VF typ TVJ = 25°C 125°C V V 2.0 4.0 5.0 7.5 20.0 2.0 4.0 5.0 7.5 7.5 20.0 2.0 4.0 5.0 7.5 7.5 20.0 2.0 10.0 A @IF 700 < 10 1300 10 15 700 < 10 1300 < 10 2000 < 10 700 < 10 1300 < 10 2000 < 10 700 < 10 IR typ @VRRM 125°C µA 3.7 3.7 9.0 9.0 14.0 6.4 6.4 18.0 18.0 26.0 26.0 8.8 8.8 22.0 22.0 33.0 33.0 19.0 19.0 Cj 0.5 • VRRM 125°C pF © 2008 IXYS All rights reserved 12.5 32.0 30.0 80.0 120.0 12.5 32.0 30.0 80.0 50.0 120.0 12.5 32.0 30.0 80.0 50.0 120.0 12.5 80.0 A IFSM 36 • • • • • • • • • • • • • • • • • DWGS04-01A DWGS10-01C DWGS04-018A DWGS04-018C DWGS10-018A DWGS10-018C DWGS20-018A DWGS20-018C DWGS04-025A DWGS04-025C DWGS10-025A DWGS10-025C DWGS20-025A DWGS20-025C DWGS04-03A DWGS04-03C DWGS10-03A DWGS10-03C DWGS20-03C Tolerance • • Type 4060 4060 2126 2126 1480 4060 4060 2126 2126 1480 1480 4060 4060 2126 2126 1480 1480 4060 2126 Chips per Wafer GaAs Schottky Diodes bondable -0 .1 1.30 1.30 2.10 2.10 3.00 1.30 1.30 2.10 2.10 3.00 3.00 1.30 1.30 2.10 2.10 3.00 3.00 1.30 2.10 A mm -0.1 1.30 1.30 1.60 1.60 1.60 1.30 1.30 1.60 1.60 1.60 1.60 1.30 1.30 1.60 1.60 1.60 1.60 1.30 1.60 B mm Dimensions ±10 % 0.45 mm Wafer thickness © 2008 IXYS All rights reserved 37 SiN Passivation 15 30 45 DWS9-15B DWS19-15B DWS29-15B DWS7-30B DWS17-30B DWS217-30B DWS27-30B DWS37-30B DWS93-45B DWS94-45A DWS3-45B DWS4-45A DWS13-45B DWS14-45A DWS213-45B DWS214-45A DWS23-45B DWS24-45A DWS33-45B DWS34-45A ① Mounted on DCB 8 V VRRM DWS39-08D Type IR 35 1.8 40 2.5 100 5 140 7 200 10 250 10 40 80 140 150 250 100 200 350 1250 mA VRRM Schottky Diodes 100 125 100 125 100 125 100 125 100 125 100 125 100 100 100 100 100 100 100 100 100 °C @ TVJ 150 175 150 175 150 175 150 175 150 175 150 175 150 150 150 150 150 150 150 150 150 °C TVJM tbd tbd 28 32 42 47 tbd tbd 63 68 89 95 tbd tbd 65 82 102 tbd 65 98 145 tbd tbd 1.7 1.7 1.4 1.4 1.2 1.2 1.1 1.1 0.8 0.8 1.7 1.4 1.2 1.1 0.8 1.7 1.4 1.1 0.8 K/W typ. rect. d = 0,5 TC = 125 °C A RthJC ① IFAVM 0.48 0.66 0.48 0.66 0.48 0.66 0.48 0.66 0.48 0.66 0.48 0.66 0.43 0.43 0.43 0.43 0.43 0.39 0.39 0.39 0.31 V 25 °C 0.43 0.54 0.43 0.53 0.43 0.53 0.43 0.54 0.43 0.54 0.43 0.54 0.34 0.34 0.34 0.34 0.34 0.27 0.27 0.27 0.21 V TVJ=125 °C VF 7 7 10 10 20 20 28 28 40 40 60 60 10 20 28 40 60 10 20 40 60 A @ IF tbd tbd 160 140 320 280 tbd tbd 640 550 900 800 140 330 420 520 800 160 350 660 1000 A tbd tbd tbd tbd 1.4 1.5 tbd tbd 2 2 2.6 2.5 tbd 2.4 5.5 tbd tbd tbd tbd tbd tbd A IRM typ. tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd ns trr typ. 7 7 10 10 20 20 28 28 40 40 50 50 10 20 28 40 50 10 20 40 50 A @ IF 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 A/us -di/dt Reverse Recovery @ 25 °C © 2008 IXYS All rights reserved IFSM 38 • • • • • • • • • • • • DWS93-45B DWS94-45A DWS3-45B DWS4-45A DWS13-45B DWS14-45A DWS213-45B DWS214-45A DWS23-45B DWS24-45A DWS33-45B DWS34-45A Tolerance • • • • • • • DWS7-30B DWS17-30B DWS217-30B DWS27-30B DWS37-30B • • • • • DWS9-15B DWS19-15B DWS29-15B DWS39-08D Type solderable 4180 4180 2783 2783 1502 1502 1000 1000 758 758 513 513 2783 1502 1000 758 513 2783 1502 758 513 6" Chips per Wafer Schottky Diodes bondable 2 2 2.4 2.4 3.25 3.25 4.45 4.45 4.44 4.44 5.41 5.41 -0.1 2.4 3.25 4.45 4.44 5.41 2.4 3.25 4.44 5.41 mm 2 2 2.4 2.4 3.25 3.25 3.25 3.25 4.44 4.44 5.41 5.41 -0.1 2.4 3.25 3.25 4.44 5.41 2.4 3.25 4.44 5.41 mm Dimensions A B 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 5% 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 mm Si thickness © 2008 IXYS All rights reserved 39 150 180 200 DWS91-150A DWS1-150A DWS11-150A DWS211-150A DWS21-150A DWS31-150A DWS1-180A DWS1-200A DWS20-200A DWS30-200A ① Mounted on DCB 100 80 DWS25-80B DWS36-80A DWS92-100A DWS2-100A DWS12-100A DWS212-100A DWS22-100A DWS32-100A 60 V VRRM DWS95-60B DWS96-60A DWS5-60B DWS6-60A DWS15-60B DWS16-60A DWS25-60B DWS26-60A DWS35-60B Type IR 2.5 10 5 2.5 1.8 2.5 5 7 10 20 1.8 2.5 5 7 10 20 150 10 35 1.8 40 2.5 50 5 100 10 200 mA VRRM Schottky Diodes 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 100 125 100 125 100 125 100 125 100 125 100 °C @ TVJ 175 175 175 175 175 175 175 175 175 175 175 175 175 175 175 175 150 175 150 175 150 175 150 175 150 175 150 °C TVJM tbd tbd tbd 30 tbd 30 43 tbd 60 85 tbd 32 45 tbd 65 92 66 91 tbd tbd tbd tbd 43 tbd 63 tbd 82 1.7 1.1 0.8 1.7 tbd 1.7 1.4 1.2 1.1 0.8 tbd 1.7 1.4 1.2 1.1 0.8 1.1 0.8 tbd tbd 1.7 1.7 1.4 1.4 1.1 1.1 0.8 K/W typ. A RthJC ① IFAVM rect. d = 0,5 TC = 125 °C 0.84 0.84 0.84 0.82 0.81 0.81 0.81 0.81 0.81 0.81 0.8 0.82 0.82 0.8 0.82 0.82 0.7 0.78 0.59 0.71 0.59 0.71 0.59 0.71 0.59 0.71 0.59 V 25 °C VF 0.68 0.68 0.68 0.67 0.66 0.66 0.66 0.66 0.66 0.66 0.63 0.63 0.63 0.63 0.63 0.63 0.58 0.61 0.52 0.59 0.52 0.61 0.52 0.59 0.52 0.59 0.49 V TVJ=125 °C 10 40 60 10 7 10 20 28 40 60 7 10 20 28 40 60 40 60 7 7 10 10 20 20 40 40 60 A @ IF 120 tbd 700 120 tbd 120 200 tbd 450 700 tbd 120 230 tbd 450 700 660 700 tbd tbd 170 170 320 tbd 660 tbd 900 A A tbd tbd 5 3.5 tbd 3 4 tbd tbd 4.5 tbd 2 2.3 tbd 2.6 3.4 1.5 2 tbd tbd tbd tbd tbd tbd tbd tbd 2.5 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd ns trr typ. 10 40 50 10 7 10 20 28 40 50 7 10 20 28 40 50 40 50 7 7 10 10 20 20 40 40 50 A @ IF 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 A/us -di/dt Reverse Recovery @ 25 °C IRM typ. © 2008 IXYS All rights reserved IFSM 40 • • • • DWS1-180A DWS1-200A DWS20-200A DWS30-200A Tolerance • • • • • • • • • • • • DWS92-100A DWS2-100A DWS12-100A DWS212-100A DWS22-100A DWS32-100A • • • DWS25-80B DWS36-80A DWS91-150A DWS1-150A DWS11-150A DWS211-150A DWS21-150A DWS31-150A • • • • • • • • • DWS95-60B DWS96-60A DWS5-60B DWS6-60A DWS15-60B DWS16-60A DWS25-60B DWS26-60A DWS35-60B Type solderable 2783 758 513 2783 4180 2783 1502 1000 758 513 4180 2783 1502 1000 758 513 758 513 4180 4180 2783 2783 1502 1502 758 758 513 Chips per Wafer Schottky Diodes bondable -0.1 2.4 4.44 5.41 2.4 2 2.4 3.25 4.45 4.44 5.41 2 2.4 3.25 4.45 4.44 5.41 4.44 5.41 2 2 2.4 2.4 3.25 3.25 4.44 4.44 5.41 mm -0.1 2.4 4.44 5.41 2.4 2 2.4 3.25 3.25 4.44 5.41 2 2.4 3.25 3.25 4.44 5.41 4.44 5.41 2 2 2.4 2.4 3.25 3.25 4.44 4.44 5.41 mm Dimensions A B 5% 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 mm Si thickness © 2008 IXYS All rights reserved 41 1200 1800 1600 2200 CWP41 CWP50 CWP55 CWP71 CWP130 CWP180 CWP341 CWP347 CWP69 CWP339 CWP345 ① = 75°C ② Mounted on DCB 1200 1600 CWP16-CG CWP21-CG CWP22-CG CWP24 CWP25-CG 20 40 60 20 20 20 20 30 40 40 60 8 12 12 20 20 5 4 4 20 mA V 800 1200 IR VRRM TVJM VDRM VRRM CWP7-CG CWP8 CWP8-CG CWP35 Type 150 125 150 150 150 °C TVJM tbd tbd 520 125 tbd tbd tbd 204 372 tbd 540 0.2 0.2 0.1 0.5 0.6 0.5 0.4 0.2 0.2 0.2 0.1 1.2 1.1 0.9 0.9 0.9 1.7 1.7 1.7 0.7 15 ① tbd tbd tbd 25 61 36 tbd tbd K/W max. RthJC ② A IF(AV)M rect. d=0.5 TC=100°C Phase Control Thyristors 1.52 1.24 1.31 1.50 1.35 1.26 1.31 1.19 1.20 1.19 1.15 1.37 1.53 1.53 1.30 1.24 1.52 1.50 1.50 1.43 1.48 1.20 1.27 1.46 1.31 1.22 1.27 1.15 1.16 1.15 1.11 1.33 1.49 1.49 1.26 1.20 1.48 1.46 1.46 1.39 300 300 600 200 200 200 300 350 450 600 600 45 80 80 60 60 20 44 44 150 VT TVJ = @IF 25°C 150°C typ. V V A 1700 6000 8000 1150 1500 1600 2400 4750 5200 7000 9500 400 520 520 600 600 200 300 300 1050 A ITSM non-rep. tP=10ms 185 150 200 150 150 150 185 150 150 200 200 150 150 150 60 60 tbd 60 60 100 tq VR = 100V, VD = VDRM tP=200µs, di/dt = -10A/µs TVJ = TVJM µs 20 20 50 20 20 20 20 20 20 50 50 10 20 15 20 20 tbd 20 20 10 V/µs 150 160 300 120 150 150 150 160 300 300 300 11 15 20 25 25 tbd 16 16 50 A @IT 150 150 150 200 200 200 200 200 200 200 150 100 100 100 100 100 50 40 80 80 IH RGK =∝ VD = 6V TVJ = 25°C mA 200 200 200 450 450 450 450 300 300 200 200 150 150 450 200 200 75 100 100 100 TVJ = 25°C mA IL © 2008 IXYS All rights reserved dv/dt 42 30 30 30 10 10 10 10 30 30 30 30 10 10 10 10 10 10 10 10 10 µs @t P Tolerance CWP7-CG CWP8 CWP8-CG CWP35 CWP16-CG CWP21-CG CWP22-CG CWP24 CWP25-CG CWP41 CWP50 CWP55 CWP71 CWP130 CWP180 CWP341 CWP347 CWP69 CWP339 CWP345 Type • • • • • • • • • • • • • • • • • • • • solderable • • • • • • • • • • • • • • • 518 375 375 125 239 196 196 196 196 94 74 58 50 29 20 16 13 50 16 13 Chips per Wafer -0.1 -0.1 4.45 5.20 5.20 8.70 6.50 7.10 7.10 7.10 7.10 10.00 9.77 12.30 13.40 15.40 17.65 18.50 23.40 13.40 18.50 23.40 mm mm 4.45 5.20 5.20 8.70 6.50 7.10 7.10 7.10 7.10 10.00 13.00 12.30 13.40 19.05 20.55 25.30 23.40 13.40 25.30 23.40 B A mm F -0.1 1.80 1.80 1.80 2.30 2.30 2.30 2.30 3.46 3.50 3.50 3.50 2.30 3.50 3.50 Phase Control Thyristors bondable +0.1 0.90 1.00 1.00 1.50 1.50 1.50 1.50 2.50 2.50 2.50 2.50 1.50 2.50 2.50 mm G -0.1 0.2 0.2 0.2 0.2 0.2 0.2 +0.1 1.0 1.0 1.5 1.5 1.5 1.5 +0.1 1.5 1.5 1.5 1.5 1.5 1.5 - Corner Gate J L M mm mm mm Dimensions ±5% 0.38 0.38 0.32 0.38 0.38 0.38 0.38 0.32 0.32 0.38 0.38 0.38 0.38 0.38 0.38 0.38 0.38 0.46 0.46 0.46 mm Sithickn. © 2008 IXYS All rights reserved ...-CG types 43 5 1600-1800 DWFP68-16/18 Tolerance DWFP17-13/18 DWFP68-16/18 DWFN2-16/18 DWFN9-16/18 DWFN17-16/18 DWFN21-16/18 DWFN35-16/18 Type • • • • • • • • • 518 152 1205 685 518 346 260 Chips per Wafer 5 1300-1800 DWFP17-13/18 solderable ① Mounted on DCB ② @125 °C VR = 100V 2 4 5 8 10 IR 0.8xVRRM TVJM typ. mA 1600 1800 V VRRM DWFN2-16/18 DWFN9-16/18 DWFN17-16/18 DWFN21-16/18 DWFN35-16/18 Type Fast Rectifier Diodes bondable -0.1 4.45 8.91 2.95 3.90 4.45 5.40 6.20 A mm -0.1 4.45 7.22 2.95 3.90 4.45 5.40 6.20 B mm ±5% 0.265 0.265 0.265 0.265 0.265 0.265 0.265 mm Si thickness 48 17 10 16 17 23 26 IF(AV)M rect. d=0.5 TC=75°C A Dimensions 125 125 125 °C TVJM 0.4 1.3 2.9 1.6 1.3 0.9 0.7 typ. K/W RthJC ① tbd 2.10 1.79 1.98 1.89 1.98 1.88 tbd tbd tbd tbd tbd tbd tbd VF TVJ = 25°C 125°C V V 70 55 10 30 55 70 80 A @IF 500 300 75 160 300 400 500 A IFSM DWFN 45② tbd tbd tbd tbd tbd tbd IRM 25°C A 70 tbd tbd tbd tbd tbd tbd tbd 1.5 1.5 1.5 1.5 1.5 1.5 DWFP tbd 10 4 8 10 15 25 A @IF © 2008 IXYS All rights reserved 250 tbd tbd tbd tbd tbd tbd Reverse Recovery @IF @-di/dt trr typ. A A/µs µs tbd 10 5 5 10 15 25 A/µs 44 @-di/dt What is DCB DCB stands for Direct Copper Bonding and denotes a process in which copper and a ceramic material are fused together, at high temperatures. IXYS has developed this particular process in which two layers of copper are directly bonded to an aluminumoxide or aluminum-nitride ceramic base. Since 1981 our power modules have been designed with DCB substrates. The DCB process yields a thin base and eliminates the need for thick, heavy copper bases that were used in the past. Because modules with DCB bases use fewer layers, they have much lower thermal resistance values and much better power cycling capabilities. Our power technology allows us to produce DCB ceramic plates in large quantities. The dimensions of our standard sheet are 138 x 190.5 mm, (or 5,5“ x 7,5“). Properties of DCB ceramic substrates: • High mechanical strength and mechanically stability • Good adhesion and corrosion resistance • Excellent electrical insulation tested to 2.5 kV(RMS) for 1 minute or more • Excellent thermal conductivity • Superb thermal cycling stability • Matched thermal expansion coefficient to that of silicon and GaAs • Good heat spreading • May be etched just like PC boards • Environmentally friendly Advantages for the users: • The 0.3 mm thick copper layer permits the copper pattern to handle high currents. • The excellent thermal conductivity allows the possibility to place power semiconductor chips in very close proximity. This results in more power per unit of volume and improved reliability of a power system. • Lighter base plate material than copper base plate. • High voltage insulation at higher temperature. • DCB is the basis for the „chip-onboard“ technology which is the packaging trend for the next generation integrated power modules. • IXYS experience in using DCB in power modules. Wealth of application know-how and support. Both sides of the finished DCB ceramic substrate are copper. Standard dimensions are 138 x 190.5 mm (usable area is 130 x 180 mm). A finished DCB part is typically nickel plated. Starting materials for DCB ceramic substrates are 0.3 mm thick copper foils, shown on both sides, top and bottom of the ceramic base plate. IXYS reserves the right to change limits, test conditions and dimensions 45 DCB Data Unclad aluminum oxide ceramic > 96 Al2O3 content dimensions usable area max. % 138 x 190.5, 138 x 210, 115 x 165* mm 130 x 180, 107 x 156* mm thickness 1.00, 0.63, 0.38, 0.25 mm arc through voltage 10 > 24 kV 0.3 ±0.015 (< 0.3 on request) mm thermal conductivity W/m . K Conduction layers - both sides copper thickness conductor width min. 0.3 ± 0.2 mm conductor spacing min. 0.4 ± 0.2 mm spacing conductor/edge of ceramic min. 0.35 ± 0.2 mm surface finishes available peel-off resistance (DIN 532282) bare copper; nickel plated; nickel + gold plated min. 9 N/mm -55...+850 °C DCB ceramic substrate application temperature range resistant to hydrogen max. up to 400 °C thermal expansion coefficient typical 7.4 x 10-6 K-1 dimensions according to customer specific drawing DCB parts are available as: • • • • bonded plate bonded and patterned plate prelasered, unbroken plate individuale substrates ALN - DCB on request * = (for 0.25 mm thk.) US Patent # 6,798,060 "power device and direct aluminum bonded substrate“. 46 © 2008 IXYS All rights reserved