Delivering
POWER
Excellence
RELIABILITY REPORT
1/04
Power Semiconductor Devices
January 2002 - December 2003
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054
USA
IXDN0009
Published February 2004
IXYS Semiconductor GmbH
Edisonstrasse 15
D-68623 Lampertheim
Germany
Humidity Test
QUALITY AND RELIABILITY
Failure Modes: Degradation of electrical leakage
characteristics due to moisture penetration into plastic
packages.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM, IDSS,
ICES, IDRM, IRRM, IGSS, IGES, VTH.
IXYS is committed to setting a new standard for
excellence in Power Semiconductors. Reflecting our
dedication to industry leadership in the manufacture of
medium to high power devices, reliability has assumed
a primary position in raw material selection, design,
and process technology.
Reliability utilizes information derived from applied
research, engineering design, analysis of field
applications and accelerated stress testing and
integrates this knowledge to optimize device design
and manufacturing processes.
All areas that impact reliability have received
considerable attention in order to achieve our goal to
be the # 1 Reliability Supplier of Power Semiconductor
products. We believe IXYS products should be the
most reliable components in your system.
We have committed significant resources to
continuously improve and optimize our device design,
wafer fab processes, assembly processes and test
capabilities. As a result of this investment, IXYS has
realized a dramatic improvement in reliability
performance on all standardized tests throughout the
product line.
Excellence in product reliability is “built-in”, not testedin. Moreover, it requires a total systems approach,
involving all parties: from design to raw materials to
manufacturing.
In addition to qualifying new products released to the
market, life and environmental tests are periodically
performed on standard products to maintain feedback
on assembly and fabrication performance to assure
product reliability. Further information on reliability of
power devices is provided on pages www.ixys.com.
Power Cycle
Failure Modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling can
cause
thermal
and
electrical
performance
degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF, IDSS,
ICES, IDRM, IRRM, BVDSS, BVCES, VDRRM, VRRM.
TERMS IN TABLES
SUMMARY TABLES 1 AND 2:
AF: acceleration factor
AF = exp { Ea *[ (T2 -T1) / ( T2 * T1 ) ] / k }
(1)
Ea: activation energy; @ HTRB Ea = 1.0 eV
@ HTGB Ea = 0.4 eV
-5
k: Boltzmann’s constant 8.6· 10 eV/K
T1: abs. application junction temperature (273+Tj) K
T2: abs. test junction temperature (273+Tj) K
UCL: upper confidence limit (60%)
Total Failures @ 60% UCL:
RELIABILITY TESTS
N = r + dr
(2)
High Temperature Reverse Bias (HTRB)
r: number of failed devices
dr: additional term, depending on both r and UCL
Failure Modes: Gradual degradation of break-down
characteristics due to presence of foreign materials
and polar/ionic contaminants disturbing the electric
field termination structure.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM, IDSS,
ICES, IDRM, IRRM, VTH.
MTTF: Mean Time To Failures = 1/Failure Rate
9
FIT: 1 FIT = 1 failure / 10 hrs
High Temperature Gate Bias (HTGB)
Failure Modes: Rupture of the gate oxide due to
localized thickness variations, structural anomalies,
particulates in the oxide, channel inversion due to
presence of mobile ions in the gate oxide.
Sensitive Parameters: IGSS, IGES,VTH, IDSS, ICES.
TABLES 3:
∆T: max Tj - min Tj during Test
Temperature Cycle
DEFINITION OF FAILURE
Failure modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling,
causing thermal and electrical performance degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF.
Parametric failure means a parameter specified in
data sheet is exceeded as specified in IEC 60747-1
and the functionality of the device is not impaired.
2
Summary of Tables 1A - 1J: HTRB
Failure Rate [FIT] 125°C, 60% UCL
Failure Rate [FIT] 90°C, 60% UCL
Total Lots Tested
Total Devices Tested
Total
Actual
Failures
60% UCL {eq. (2)}
Total Equivalent Device Hours
@ 125°C {AF eq. (1)}
MTTF
125°C 60% UCL
(Years)
90°C 60% UCL
Table 1A
Table 1B
Table 1C
Table1D
Table 1E
Table 1F
Table 1G
Table 1H
Table 1J
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
ISOPLUS
Breakover
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
470
28
71
2031
0
0.92
54466
3261
7
70
1
2.00
5257
315
31
320
0
0.92
8154
488
17
163
0
0.92
5316
318
21
350
0
0.92
4508
270
12
210
0
0.92
2593
155
11
190
0
0.92
17
380
0
-
61828
3702
4
80
0
0.92
1959430
243
4060
36720
2
35
174995
22
363
112824
14
234
173046
21
359
204077
25
423
354810
44
735
462726
-
14880
2
31
Summary of Table 2A - 2C: HTGB
Failure Rate [FIT] 125°C, 60% UCL
Failure Rate [FIT] 90°C, 60% UCL
Total Lots Tested
Total Devices Tested
Total
Actual
Failures
60% UCL {eq. (2)}
Total Equivalent Device Hours
@ 125°C {AF eq. (1)}
MTTF
125°C 60% UCL
(Years)
90°C 60% UCL
Table 2A
Table 2B
Table 2C
MOSFET/IGBT
MOSFET/IGBT
ISOPLUS
discrete device *)
Module
722
43
45
1290
0
0.92
26099
1563
5
50
0
0.92
5
140
0
-
1273360
158
2639
35250
4
73
120000
-
*) including ISOPLUS
3
Diode
Summary of Tables 3A - 3H: Power Cycle
Total
Total
Total
Total
Lots Tested
Devices Tested
Failures
Device Cycles
Table 3A
Table 3B
Table 3C
Table3D
Table 3E
Table 3F
Table 3G
Table 3H
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
15
347
0
3580000
2
20
0
200000
8
80
0
1040000
8
80
0
390000
15
250
0
1160000
8
150
0
570000
9
170
0
1080000
8
176
0
1460000
Summary of Tables 4A - 4J: Temperature Cycle
Total
Total
Total
Total
Lots Tested
Devices Tested
Failures
Device Cycles
Table 4A
Table 4B
Table 4C
Table4D
Table 4E
Table 4F
Table 4G
Table 4H
Table 4J
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
Breakover
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
14
340
0
76400
6
60
1
2700
29
401
3
69700
24
245
1
15600
28
509
3
40150
22
450
2
27400
22
360
0
46200
9
180
0
9600
Diode
Summary of Tables 5A - 5H: Humidity Test
Total
Total
Total
Total
Lots Tested
Devices Tested
Failures
Device Hours
Table 5A
Table 5C
Table5D
Table 5E
Table 5F
Table 5G
Table 5H
Table 5J
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
Breakover
discrete device *)
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
13
350
0
54960
6
60
0
10080
3
30
0
5040
10
160
0
14160
3
60
0
5760
10
190
1
15840
*) including ISOPLUS
4
Diode
10
190
1
15840
4
80
0
3840
10
180
0
16400
HTRB (Tables 1A .. 1J)
TABLE 1A: MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1 IRFP260
SP0243
160
2 IRFP450
SK0224
400
3 IRFP460
SK0229
400
4 IXDA20N120AS
446
960
5 IXDA20N120AS
640
960
6 IXDA20N120AS
757
960
7 IXDA20N120AS
757
960
8 IXEH40N120
539
960
9 IXER60N120
488
960
10 IXFB70N60Q2
SP0335
480
11 IXFB80N50Q2
SP0251
400
12 IXFF24N100
389
800
13 IXFH12N100F
SP0130
800
14 IXFH13N50
SP0338
400
15 IXFH15N80
SP 0224
640
16 IXFH16N90Q
SP 0242
720
17 IXFH17N80Q
SK0322
640
18 IXFH20N60
SK0339
480
19 IXFH21N50
SK0342
400
20 IXFH21N50Q
K0246E
400
21 IXFH23N60Q
SK0322
480
22 IXFH24N50
K0314K
400
23 IXFH26N50
SP 0228
400
24 IXFH26N50
SP0237
400
25 IXFH26N50Q
K0315H
400
26 IXFH26N50Q
SK0339
400
27 IXFH26N50Q
SP0308
400
28 IXFH26N60Q
K0311J
480
29 IXFH28N50F
SP 0151
400
30 IXFH28N50Q
SP0325
400
31 IXFH32N50
SK 0224
400
32 IXFH32N50Q
SK0330
400
33 IXFH32N50Q
SP 0147
400
34 IXFH40N50Q
SP0326
400
35 IXFH50N20
SK0325
160
36 IXFH60N20F
SP 0151
160
37 IXFH66N20Q
SK0306
160
38 IXFH6N100F
SP 9936
800
39 IXFH6N100Q
TP 0143
800
40 IXFH80N10Q
SK0313
80
41 IXFH88N20Q
SK0302
160
42 IXFH9N80
TK 0229
640
43 IXFK27N80
SP 0234
640
44 IXFK48N50
SP0309
400
45 IXFK55N50F
SP 0216
400
46 IXFK73N30Q
SP0311
240
47 IXFK90N30
SP 0244
240
48 IXFN36N100
SP 0229
800
49 IXFX27N80Q
SP 0236
640
50 IXFX34N80
SP 0212
640
51 IXFX48N50Q
SP0339
400
52 IXFX55N50
SP 0223
400
53 IXFX55N50F
SP0305
400
54 IXKN40N60C
838
480
55 IXTH41N25
SP0311
200
56 IXTH48N20
SP0315
160
57 IXTH72N20
SP0320
160
58 IXTH75N15
K0307B
120
59 IXTH75N15
SK0338
120
60 IXTK120N25
SP 0151
200
61 IXTK120N25
SP0305
200
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
105
105
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
5
Sample
Size
30
30
30
20
20
20
20
20
20
30
30
10
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
29
30
30
30
30
30
30
30
30
30
30
30
30
30
30
10
30
30
30
30
30
25
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
3360
20000
20000
20000
20000
20000
30000
30000
10000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
29000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
1680
30000
30000
30000
30000
30000
25000
30000
Remark
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
62 IXTK180N15
SP 0151
120
63 IXTK250N10
SP0318
80
64 IXTK62N25
SP 0150
200
65 IXTK62N25
SP0331
200
66 IXTK62N25
SP0340
200
67 IXTK62N25
SS0332
200
68 IXTK90N15
SP 0150
120
69 IXTP3N120
K0321
800
70 IXTQ52N30P
SK0342
240
71 IXTQ69N30P
SK0342
240
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Sample
Size
25
30
39
30
30
30
33
30
30
30
Failures
TABLE 1B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 MUBW15-12A7
392
2 MUBW50-12A8
390
3 MWI30-06A7
553
4 MWI75-12A8
677
5 MWI75-12A8
677
6 VMM300-03FP
636
7 VMM90-09F
508
Voltage
[V]
1120
960
480
960
960
240
720
Temp.
[°C]
125
125
125
125
125
125
125
Time
[hrs]
168
1000
168
1000
168
168
1000
Sample
Size
10
10
10
10
10
10
10
Failures
TABLE 1C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC162
874
2 MCC162-18
732
3 MCC21-14
396
4 MCC250-16
652
5 MCC26-16
796
6 MCC310-16
870
7 MCC312-16
449
8 MCC44-16io1
592
9 MCC56
685
10 MCC56-16io1
448
11 MCC56-18
696
12 MCC72-16
727
13 MCC95-16io1
598
14 MCC95-16io1
599
15 MCC95-16io1B
816
16 MCD162-16
564
17 MCD162-16io1
564
18 MCD56-16io1B
809
19 MCO150-12io1
607
20 MCO150-12io1
607
21 MDD172-16
400
22 MDD172-16
400
23 MDD26-16
519
24 MDD56-16
679
25 MDD56-18
423
26 MDD56-18
423
27 MDD56-18
423
28 MDD56-18
423
29 MDD56-18
739
30 MDD95-16
466
31 MDO500-22
815
Voltage
[V]
1260
1260
980
1120
1120
1120
1120
1120
1260
1120
1260
1120
1120
1280
1120
1120
1120
1120
960
840
1120
1120
1120
1120
1260
1260
1260
1280
1260
1120
1540
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
150
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
168
168
168
168
500
168
168
168
1000
168
1000
168
168
168
168
168
1100
500
1000
168
1000
168
168
168
1000
1000
1000
1000
1000
168
168
Sample
Size
10
10
10
10
10
10
10
10
10
10
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Failures
6
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
25000
30000
39000
30000
30000
30000
33000
30000
30000
30000
Remark
Device Hours
[hrs]
1680
10000
1680
10000
1680
1680
10000
Remark
Device Hours
[hrs]
1680
1680
1680
1680
5000
1680
1680
1680
10000
1680
20000
1680
1680
1680
1680
1680
11000
5000
10000
1680
10000
1680
1680
1680
10000
10000
10000
10000
10000
1680
1680
Remark
TABLE 1D: Controller/Rectifier Bridge
Date Code
# Part Number
or
Test #
1 MMO75-16
761
2 VBO19-16DT1
794
3 VBO25-16A
523
4 VHF28-16io5
404
5 VHF36-16
463
6 VUB120-12MO1
436
7 VUB120-16NO2
833
8 VUB72-16
835
9 VUM24-05
846
10 VUM24-05
846
11 VUO121-16NO1
709
12 VUO34-18
422
13 VUO34-18
422
14 VUO36-16NO8
740
15 VUO50-16
625
16 VUO86-16NO7
428
17 VVY40-16
700
Voltage
[V]
1120
1120
1120
1120
1120
1120
960
960
560
400
1120
1260
1260
1120
1120
1120
1120
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
150
125
125
125
125
Time
[hrs]
168
168
168
1000
168
168
1000
500
300
300
1000
168
1000
168
168
168
168
Sample
Size
10
10
10
10
10
3
10
10
10
10
10
10
10
10
10
10
10
Failures
Date Code
or
Test #
742
600
560
554
486
483
722
465
381
715
575
525
525
791
552
552
714
487
487
499
403
Voltage
[V]
200
240
480
480
960
160
960
160
960
960
960
480
480
480
480
480
600
160
160
480
480
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
150
125
125
125
150
125
125
125
125
Time
[hrs]
1000
168
168
1000
168
168
1000
168
168
168
168
168
168
168
1000
1000
168
1000
168
168
168
Sample
Size
20
20
20
20
20
10
10
20
20
20
10
20
20
20
20
20
20
10
10
10
10
Failures
Date Code
or
Test #
582
518
789
714
790
430
513
574
501
500
676
676
Voltage
[V]
240
144
32
600
32
100
100
150
80
8
50
50
Temp.
[°C]
125
125
100
150
100
125
150
150
125
100
100
100
Time
[hrs]
1000
168
1000
168
1000
168
168
1000
1000
1000
168
168
Sample
Size
20
20
20
20
20
10
20
20
20
20
10
10
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
1680
1680
1680
10000
1680
504
10000
5000
3000
3000
10000
1680
10000
1680
1680
1680
1680
Remark
Device Hours
[hrs]
20000
3360
3360
20000
3360
1680
10000
3360
3360
3360
1680
3360
3360
3360
20000
20000
3360
10000
1680
1680
1680
Remark
Device Hours
[hrs]
20000
3360
20000
3360
20000
1680
3360
20000
20000
20000
1680
1680
Remark
TABLE 1E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
DSEC60-02A
DSEC60-03AR
DSEC60-06A
DSEI120-06A
DSEI20-12A
DSEI2x121-02A
DSEI2x61-12B
DSEK60-02
DSEP15-12CR
DSEP15-12CR
DSEP2x31-12A
DSEP30-06CR
DSEP30-06CR
DSEP60-06A
DSEP8-06B
DSEP8-06B
DSS17-06CR
MEK350-02B
MEK350-02B
MEK90-06F
MEK95-06DA"E"
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
TABLE 1F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
DGS3-03AS
DGSK20-018A
DSS1-40BA
DSS17-06CR
DSS2-40BB
DSS2x160-01A
DSSK28-01A
DSSK50-015A
DSSK70-008A
DSSK80-0008D
DSSK80-006B
DSSK80-006B
7
0
0
0
0
0
0
0
0
0
0
0
0
TABLE 1G: Thyristor/Diode single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1 CS22-12
707
840
2 CS30-16io1
417
1120
3 CS30-16io1
556
1120
4 CS30-16io1
556
1120
5 CS60-14io1
594
980
6 DSA35-18
407
1260
7 DSAI75-16B
668
1120
8 DSI45-16AR
823
1120
9 DSIK45-16AR
608
1120
10 DSP25-16A
877
1120
11 DSP8-12AC
529
840
Temp.
[°C]
125
125
125
125
125
150
150
150
150
150
150
Time
[hrs]
1000
168
1000
1000
1000
168
168
168
1000
168
1000
Sample
Size
20
20
10
10
30
10
10
20
20
20
20
Failures
Time
[hrs]
168
168
168
168
168
168
168
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
Sample
Size
20
20
20
20
20
20
20
20
20
20
20
10
30
30
30
30
30
Failures
480
480
1120
1120
840
600
960
800
640
640
400
400
400
Temp.
[°C]
125
125
125
125
150
125
150
150
150
150
125
125
125
125
125
125
125
Voltage
[V]
480
560
720
800
Temp.
[°C]
125
125
125
125
Time
[hrs]
168
240
168
168
Sample
Size
20
20
20
20
Failures
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
20000
3360
10000
10000
30000
1680
1680
3360
20000
3360
20000
Remark
Device Hours
[hrs]
3360
3360
3360
3360
3360
3360
3360
20000
20000
3360
20000
10000
30000
30000
30000
30000
30000
Remark
Device Hours
[hrs]
3360
4800
3360
3360
Remark
TABLE 1H: ISOPLUS
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
DSEC60-03AR
DSEK60-02
DSEP15-12CR
DSEP15-12CR
DSEP30-06CR
DSEP30-06CR
DSI45-16AR
DSIK45-16AR
DSP8-12AC
DSS17-06CR
IXER60N120
IXFF24N100
IXFX27N80Q
IXFX34N80
IXFX48N50Q
IXFX55N50
IXFX55N50F
Date Code
or
Test #
600
465
381
715
525
525
823
608
529
714
488
389
SP 0236
SP 0212
SP0339
SP 0223
SP0305
TABLE 1J: Breakover Diode
Date Code
# Part Number
or
Test #
1 IXBOD1-06
521
2 IXBOD1-07
453
3 IXBOD1-09
743
4 IXBOD1-10
868
Voltage
[V]
240
160
960
8
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
HTGB (Tables 2A .. 2C)
TABLE 2A: MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1
IRFP260
SP0243
16
2
IRFP450
SK0224
16
3
IRFP460
SK0229
16
4
IXBH9N160G
440
16
5
IXDN55N120D1
596
16
6
IXFB38N100Q2
SP0320
16
7
IXFB80N50Q2
SP0251
16
8
IXFH12N100F
SP0130
16
9
IXFH13N50
SP0338
16
10 IXFH15N80
SP 0224
16
11 IXFH16N90Q
SP 0242
16
12 IXFH20N60
SK0339
16
13 IXFH21N50
SK0342
16
14 IXFH21N50Q
K0246E
16
15 IXFH24N50
K0314K
16
16 IXFH26N50
SP0237
16
17 IXFH26N50Q
K0315H
16
18 IXFH26N50Q
SK0339
16
19 IXFH26N50Q
SP0308
16
20 IXFH26N60Q
K0311J
16
21 IXFH32N50
SK 0224
16
22 IXFH32N50Q
SK0330
16
23 IXFH32N50Q
SP 0147
16
24 IXFH50N20
SK0325
16
25 IXFH80N10Q
SK0313
16
26 IXFK27N80
SP 0234
16
27 IXFK48N50
SP0309
16
28 IXFK55N50F
SP 0216
16
29 IXFK90N30
SP 0244
16
30 IXFN36N100
SP 0229
16
31 IXFX27N80Q
SP 0236
16
32 IXFX34N80
SP 0212
16
33 IXFX48N50Q
SP0339
16
34 IXFX4N100Q
TP0149
16
35 IXKN40N60C
838
20
36 IXLF19N250
577
30
37 IXTH41N25
SP0311
16
38 IXTH48N20
SP0315
16
39 IXTH72N20
SK0306
16
40 IXTH75N15
K0307B
16
41 IXTH75N15
SK0338
16
42 IXTK120N25
SP0305
16
43 IXTK250N10
SP0318
16
44 IXTQ52N30P
SK0342
16
45 IXTQ69N30P
SK0342
16
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Sample
Size
30
30
30
20
10
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
10
20
30
30
30
30
30
30
30
30
30
Failures
TABLE 2B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 MUBW25-12A7
496
2 MUBW25-12A7
496
3 MUBW30-06A7
391
4 MUBW30-06A7
391
5 VMM300-03FP
636
Temp.
[°C]
150
125
150
125
125
Time
[hrs]
168
1685
168
168
1000
Sample
Size
10
10
10
10
10
Failures
Voltage
[V]
16
16
16
16
16
9
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
20000
1680
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
1680
20000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
Device Hours
[hrs]
1680
16850
1680
1680
10000
Remark
TABLE 2C: ISOPLUS
#
Part Number
1
2
3
4
5
IXLF19N250
IXFX27N80Q
IXFX34N80
IXFX48N50Q
IXFX4N100Q
Date Code
or
Test #
577
SP 0236
SP 0212
SP0339
TP0149
Voltage
[V]
30
16
16
16
16
Temp.
[°C]
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
Sample
Size
20
30
30
30
30
Failures
TABLE 3A: MOSFET/IGBT single device
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 IXBH9N160G
440
125
2 IXFB70N60Q2
SP0335
125
3 IXFH12N100F
SP0130
125
4 IXFH26N50
SP 0228
125
5 IXFH26N50Q
K0315H
125
6 IXFH26N60Q
K0311J
125
7 IXFH50N20
SK0325
125
8 IXFK90N30
SP 0244
125
9 IXFN55N50
558
125
10 IXFX27N80Q
SP 0236
125
11 IXFX48N50Q
SP0339
125
12 IXFX4N100Q
TP0149
125
13 IXFX55N50
SP 0223
125
14 IXTQ52N30P
SK0342
125
15 IXTQ69N30P
SK0342
125
∆Τ
[K]
80
100
100
100
100
100
100
100
80
100
100
100
100
100
100
Number
of
Cycles
5000
10000
10000
10000
10000
10000
10000
10000
24000
10000
10000
10000
10000
10000
10000
Sample
Size
20
24
24
24
24
24
24
24
15
24
24
24
24
24
24
Failures
TABLE 3B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 MUBW50-12A8
390
2 VWI6-12P1
433
Tj(max)
[°C]
125
125
∆Τ
[K]
80
80
Number
of
Cycles
10000
10000
Sample
Size
10
10
Failures
TABLE 3C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC200
747
2 MCC310-12
507
3 MCC56
685
4 MCC56-16io1
820
5 MCO150-12io1
607
6 MDD56-12
532
7 MDD95-12
452
8 VCO180-16io7
526
Tj(max)
[°C]
125
125
125
125
125
125
125
125
∆Τ
[K]
80
80
80
80
80
80
80
80
Number
of
Cycles
20000
10000
35000
10000
4000
10000
10000
5000
Sample
Size
10
10
10
10
10
10
10
10
Failures
TABLE 3D: Controller, Rectifier Bridge
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 VBO125-16NO7
741
125
2 VHF28-14
457
125
3 VHF28-16io5
404
125
4 VUE50-12
717
125
5 VUO110-16NO7
565
125
6 VUO110-16NO7
565
125
7 VUO25-16NO8
434
125
8 VUO34-16
516
125
∆Τ
[K]
80
80
80
80
80
80
80
80
Number
of
Cycles
2000
5000
10000
5000
8000
2000
2000
5000
Sample
Size
10
10
10
10
10
10
10
10
Failures
0
0
0
0
0
Device Hours
[hrs]
20000
30000
30000
30000
30000
Remark
POWER CYCLE (Tables 3A ..3H)
10
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Cycles
Remark
100000
240000
240000
240000
240000
240000
240000
240000
360000
240000
240000
240000
240000
240000
240000
Device Cycles
Remark
100000
100000
Device Cycles
Remark
200000
100000
350000
100000
40000
100000
100000
50000
Device Cycles
20000
50000
100000
50000
80000
20000
20000
50000
Remark
TABLE 3E: FRED
Date Code
or
Test #
795
664
394
554
483
722
720
715
468
474
552
714
485
485
639
Tj(max)
[°C]
125
150
125
130
125
125
150
125
150
150
150
150
125
125
125
∆Τ
[K]
80
105
80
85
80
80
105
80
105
105
105
105
80
80
80
Number
of
Cycles
4000
2000
10000
4000
2000
5000
2000
5000
4000
2000
4000
5000
10000
10000
5000
Sample
Size
20
20
20
20
10
10
20
20
20
20
20
20
10
10
10
Failures
Date Code
or
Test #
471
714
409
409
514
513
574
585
Tj(max)
[°C]
145
150
125
125
125
125
125
113
∆Τ
[K]
100
105
80
80
80
80
80
80
Number
of
Cycles
4000
5000
5000
5000
5000
2000
6000
2000
Sample
Size
20
20
10
10
10
40
20
20
Failures
TABLE 3G: Thyristor/Diode single device
Date Code
# Part Number
or
Tj(max)
[°C]
Test #
1 CS22-12
707
125
2 CS45-16io1R
464
125
3 CS9444L
602
125
4 CS9444LD
601
125
5 DS1-12D
470
150
6 DSA17-16A
534
125
7 DSA35-18
407
150
8 DSA75-16B
718
150
9 DSI45-12A
613
125
∆Τ
[K]
80
80
80
80
105
80
105
105
80
Number
of
Cycles
4000
5000
6000
6000
20000
2000
2000
2000
4000
Sample
Size
20
20
30
30
20
10
10
10
20
Failures
∆Τ
[K]
80
80
80
105
100
100
100
100
Number
of
Cycles
5000
10000
5000
5000
10000
10000
10000
10000
Sample
Size
20
20
20
20
24
24
24
24
Failures
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
DSEC30-02A
DSEC60-06A
DSEE15-12CC
DSEI120-06A
DSEI2x121-02A
DSEI2x61-12B
DSEK60-06A
DSEP15-12CR
DSEP29-06A
DSEP29-06B
DSEP8-06B
DSS17-06CR
MEK350-02
MEK350-02
MEO450-12DA "L"
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Cycles
Remark
80000
40000
200000
80000
20000
50000
40000
100000
80000
40000
80000
100000
100000
100000
50000
TABLE 3F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
DGS4-025A
DSS17-06CR
DSS2x41-01A
DSS2x41-01A
DSS2x61-0045A
DSSK28-01A
DSSK50-015A
DSSK70-0015B
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Cycles
Remark
80000
100000
50000
50000
50000
80000
120000
40000
Device Cycles
Remark
80000
100000
180000
180000
400000
20000
20000
20000
80000
TABLE 3H: ISOPLUS
#
Part Number
1
2
3
4
5
6
7
8
CS45-16io1R
DSEE15-12CC
DSEP15-12CR
DSS17-06CR
IXFX27N80Q
IXFX48N50Q
IXFX4N100Q
IXFX55N50
Date Code
or
Test #
464
394
715
714
SP 0236
SP0339
TP0149
SP 0223
Tj(max)
[°C]
125
125
125
150
125
125
125
125
11
0
0
0
0
0
0
0
0
Device Cycles
100000
200000
100000
100000
240000
240000
240000
240000
Remark
TEMPERATURE CYCLE (Tables 4A ..4J)
TABLE 4A: MOSFET/IGBT single device
Date Code
Low
# Part Number
or
Temp.
Test #
[°C]
1 FMM150-0075P
566
-55
2 FMM150-0075P
566
-55
3 IXBH9N140G
542
-55
4 IXDH20N120D1
420
-55
5 IXFC26N50Q
648
-45
6 IXFF24N100
389
-55
7 IXFF55N50
623
-45
8 IXFG55N50
622
-45
9 IXFK90N30
IX9X
-65
10 IXFL55N50
621
-45
11 IXFN80N50
693
-40
12 IXKN40N60C
838
-40
13 IXTK120N25
IX90
-65
14 IXTK80N25
IX81
-65
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
250
40
50
20
250
50
250
100
500
100
100
20
500
500
Sample
Size
20
20
20
20
30
20
30
30
30
30
20
10
30
30
Failures
TABLE 4B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 MUBW25-12A7
496
2 MUBW30-06A7
391
3 MWI30-06A7
553
4 VMM90-09F
425
5 VWI6-12P1
433
6 VWM350-0075
590
Low
Temp.
[°C]
-40
-40
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
Number
of
Cycles
50
50
50
50
20
50
Sample
Size
10
10
10
10
10
10
Failures
TABLE 4C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC 162
847
2 MCC162
0227
3 MCC21-14
725
4 MCC26
495
5 MCC26-14io8
723
6 MCC44
495
7 MCC44
673
8 MCC44-12
469
9 MCC56
685
10 MCC56
685
11 MCC56-1
697
12 MCC56-1
698
13 MCC56-1
0307
14 MCC56-12
754
15 MCC56-12
784
16 MCC56-14
405
17 MCC56-14
785
18 MCC56-14
786
19 MCC56-16
811
20 MCC56-16
812
21 MCC56-8
699
22 MCC72-16
386
23 MCD162-16
803
24 MCD56-16
783
25 MCO150-12io1
607
26 MDD172
0329
27 MDD26-14
724
28 MDD56
495
29 MDD56
738
30 MDD56
738
31 MDD56-16
517
32 MDD95-08
637
Low
Temp.
[°C]
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
100
50
100
500
100
500
150
50
300
100
200
200
350
100
100
50
100
100
100
100
200
50
100
100
50
50
50
500
300
290
50
50
Sample
Size
10
10
10
12
10
20
10
10
20
20
10
10
20
10
10
10
10
10
30
30
10
10
10
10
10
30
10
20
9
10
10
10
Failures
12
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
0
0
0
0
0
1
1
0
0
1
0
0
0
0
0
0
0
0
0
0
1
1
0
0
Device Cycles
Remark
5000
800
1000
400
7500
1000
7500
3000
15000 -65, 150°C / 10min
3000
2000
200
15000 -65, 150°C / 10min
15000 -65, 150°C / 10min
Device Cycles
Remark
500
500
500
500
200
500
Device Cycles
1000
500
1000
6000
1000
10000
1500
500
6000
2000
2000
2000
7000
1000
1000
500
1000
1000
3000
3000
2000
500
1000
1000
500
1500
500
10000
2700
2900
500
500
Remark
TABLE 4E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
DSEC30-06A
DSEC60-02A
DSEC60-02AQ
DSEC60-03A
DSEC60-03AR
DSEI120-06A
DSEI2x121-02A
DSEI2x61-12B
DSEI60-06A
DSEI8-06A
DSEK60-02
DSEK60-06A
DSEP130-06A
DSEP130-06A
DSEP15-12CR
DSEP15-12CR
DSEP29-06A
DSEP29-06B
DSEP29-06B
DSEP2x31-12A
DSEP30-06B
DSEP30-06CR
DSEP60-06A
MEK250-12
MEK250-12
MEK350-02B
MEK350-02B
MEO450-12I
Date Code
or
Test #
484
782
839
681
600
554
483
722
705
778
465
720
616
616
715
381
468
767
474
575
831
525
791
384
384
651
0303
438
Low
Temp.
[°C]
-55
-55
-55
-55
-55
-40
-40
-40
-40
-40
-40
-40
-55
-55
-55
-55
-55
-55
-55
-40
-55
-55
-55
-40
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
200
100
100
20
350
10
50
50
100
20
50
50
50
100
20
50
100
20
10
150
20
100
50
50
50
100
50
Sample
Size
29
20
20
20
20
20
10
10
20
40
20
20
20
20
20
20
20
20
20
10
20
20
20
10
10
10
10
10
Failures
Date Code
or
Test #
583
518
763
763
789
790
430
458
514
744
744
854
513
442
442
442
574
665
585
489
729
729
Low
Temp.
[°C]
-55
-55
-55
-55
-55
-55
-40
-40
-40
-40
-40
-55
-55
-40
-55
-55
-55
-55
-55
-55
-55
-55
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
200
20
100
100
100
100
10
100
10
10
10
100
20
20
120
20
50
50
20
50
100
100
Sample
Size
20
20
20
20
20
20
10
10
10
40
40
20
20
20
20
20
20
20
20
20
20
20
Failures
0
0
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
Device Cycles
Remark
1450
4000
2000
2000
400
7000
100
500
1000
4000
400
1000
1000
1000
2000
400
1000
2000
400
100
3000
400
2000
500
500
500
1000
500
TABLE 4F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
DGS19-025AS
DGSK20-018A
DGSK24-025CS
DGSK24-025CS
DSS1-40BA
DSS2-40BB
DSS2x160-01A
DSS2x200-0008D
DSS2x61-0045A
DSS81-0045
DSS81-0045B
DSSK20-0045AM
DSSK28-01A
DSSK28-01AS
DSSK28-01AS
DSSK28-01AS
DSSK50-015A
DSSK50-01A
DSSK70-0015B
DSSK80-0008D
DSSK80-006B
DSSK80-006B
13
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
Device Cycles
4000
400
2000
2000
2000
2000
100
1000
100
400
400
2000
400
400
2400
400
1000
1000
400
1000
2000
2000
Remark
TABLE 4G: Thyristor/Diode single device
Date Code
Low
# Part Number
or
Temp.
Test #
[°C]
1 CS22-12
707
-40
2 CS23-12io2
504
-40
3 CS30-16io1
556
-40
4 CS30-16io1
556
-40
5 CS30-16io1
382
-55
6 CS35-14io4
825
-40
7 CS45
687
-40
8 CS45
687
-40
9 CS9444L
602
-55
10 CS9444LD
601
-55
11 DSA17-16A
534
-40
12 DSA9-16F
704
-40
13 DSAI35-16A
735
-40
14 DSAI75-18B
439
-40
15 DSI45-16
764
-40
16 DSI45-16
764
-40
17 DSI45-16AR
823
-40
18 DSI75-04D
853
-40
19 DSI75-04D
853
-40
20 DSIK45-16AR
608
-40
21 DSP45-16AR
645
-40
22 DSP8-08S
758
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
20
350
350
50
20
150
50
250
250
20
20
20
20
100
100
50
50
50
100
100
100
Sample
Size
20
10
20
20
20
10
20
20
30
30
10
10
10
10
10
10
20
10
10
20
20
20
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Cycles
Remark
1000
200
7000
7000
1000
200
3000
1000
7500
7500
200
200
200
200
1000
1000
1000
500
500
2000
2000
2000
TABLE 4H: ISOPLUS
Date Code
or
Test #
600
465
381
715
525
823
608
645
389
Low
Temp.
[°C]
-55
-40
-55
-55
-55
-40
-40
-40
-55
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
Number
of
Cycles
20
20
20
100
20
50
100
100
50
Sample
Size
20
20
20
20
20
20
20
20
20
Failures
TABLE 4J: Breakover Diode
Date Code
# Part Number
or
Test #
1 IXBOD1-06
521
2 IXBOD1-07
453
3 IXBOD1-07
453
4 IXBOD1-07
597
5 IXBOD1-08
550
6 IXBOD1-08
550
7 IXBOD1-08
612
8 IXBOD1-09
597
9 IXBOD1-09
743
10 IXBOD1-10
868
Low
Temp.
[°C]
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
20
30
20
50
200
200
200
50
50
50
Sample
Size
20
20
20
10
20
20
20
10
20
20
Failures
#
Part Number
1
2
3
4
5
6
7
8
9
DSEC60-03AR
DSEK60-02
DSEP15-12CR
DSEP15-12CR
DSEP30-06CR
DSI45-16AR
DSIK45-16AR
DSP45-16AR
IXFF24N100
14
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Cycles
Remark
400
400
400
2000
400
1000
2000
2000
1000
Device Cycles
400
600
400
500
4000
4000
4000
500
1000
1000
Remark
HUMIDITY TEST (Tables 5A ..5H)
TABLE 5A: MOSFET/IGBT single device
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 FMM150-0075P
566
85
2 FMM150-0075P
566
85
3 IXDN75N120
482
121
4 IXEH40N120
539
121
4 IXFB80N50F
647
121
5 IXFC26N50Q
648
121
6 IXFF55N50
623
121
7 IXFG55N50
622
121
7 IXFL55N50
621
121
8 IXTK110N25
IX90
121
9 IXTK120N25
IX90
121
10 IXTK80N25
IX81
121
11 IXTK90N30
IX9X
121
Rel. H.
[%]
85
85
100
100
100
100
100
100
100
100
100
100
100
Time
[hrs]
168
168
48
96
168
168
168
168
168
168
168
168
168
Sample
Size
20
20
20
20
30
30
30
30
30
30
30
30
30
Failures
TABLE 5C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC132-14
589
2 MCC250-14
387
3 MCC26-16
796
4 MCC56
631
5 MCC95-16io1
821
6 MCD56-12io1
414
Temp.
[°C]
85
85
85
85
85
85
Rel. H.
[%]
85
85
85
85
85
85
Time
[hrs]
168
168
168
168
168
168
Sample
Size
10
10
10
10
10
10
Failures
TABLE 5D: Controller, Rectifier Bridge
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 VUM24-05
846
85
2 VUO36-16NO8
435
85
3 VWO85-14
777
85
Rel. H.
[%]
85
85
85
Time
[hrs]
168
168
168
Sample
Size
10
10
10
Failures
Sample
Size
20
20
10
20
20
20
20
10
10
10
Failures
Sample
Size
20
20
20
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
3360
3360
960
1920
5040
5040
5040
5040
5040
5040
5040
5040
5040
Remark
Device Hours
[hrs]
1680
1680
1680
1680
1680
1680
Remark
Device Hours
[hrs]
1680
1680
1680
Remark
Device Hours
[hrs]
960
1920
480
1920
1920
960
960
1680
1680
1680
Remark
Device Hours
[hrs]
1920
1920
1920
Remark
TABLE 5E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
DSEC30-02A
DSEC60-02AQ
DSEI2x101-06
DSEP130-06A
DSEP130-06A
DSEP2x91-06A
DSEP30-06CR
MEK250/12DA
MEK300-06D
MEK350-02DA
Date Code
or
Test #
795
839
413
616
616
787
525
429
399
793
Temp.
[°C]
121
121
121
121
121
121
121
85
85
85
Rel. H.
[%]
100
100
100
100
100
100
85
85
85
Time
[hrs]
48
96
48
96
96
48
48
168
168
168
Date Code
or
Test #
807
763
763
Temp.
[°C]
121
121
121
Rel. H.
[%]
100
100
100
Time
[hrs]
96
96
96
0
0
0
0
0
0
0
0
0
0
TABLE 5F: Schottky Diode
#
Part Number
1
2
3
DGS11-025C
DGSK24-025CS
DGSK24-025CS
15
0
0
0
TABLE 5G: Thyristor/Diode single device
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 CS30-16io1
417
121
2 CS45
687
121
3 CS45
687
121
4 CS45
687
121
5 DSI45-16
764
121
6 DSI45-16AR
823
121
7 DSP25-16A
388
121
8 DSP8-08S
758
121
9 DSP8-08S
758
121
10 DSP8-08S
758
121
Rel. H.
[%]
100
100
100
100
100
100
100
100
100
100
Time
[hrs]
48
96
96
96
48
48
96
96
96
96
Sample
Size
20
20
20
20
10
20
20
20
20
20
Failures
Sample
Size
20
20
30
20
20
30
Failures
Sample
Size
20
20
20
20
Failures
0
0
1
0
0
0
0
0
0
0
Device Hours
[hrs]
960
1920
1920
1920
480
960
1920
1920
1920
1920
Remark
TABLE 5H: ISOPLUS
Date Code
or
Test #
525
823
648
389
389
623
Temp.
[°C]
121
121
121
121
121
121
Rel. H.
[%]
100
100
100
100
100
Time
[hrs]
48
48
168
96
96
168
TABLE 5J: Breakover diode
Date Code
# Part Number
or
Test #
1 IXBOD1-06
567
2 IXBOD1-07
481
3 IXBOD1-09
743
4 IXBOD1-10
868
Temp.
[°C]
121
121
121
121
Rel. H.
[%]
100
100
100
100
Time
[hrs]
48
48
48
48
#
Part Number
1
2
3
4
5
6
DSEP30-06CR
DSI45-16AR
IXFC26N50Q
IXFF24N100
IXFF24N100
IXFF55N50
16
0
0
0
1
1
0
0
0
0
0
Device Hours
Remark
[hrs]
960
960
5040
1920 I_dss@ 96hr
1920 I_dss@ 96hr
5040
Device Hours
[hrs]
960
960
960
960
Remark