Si PINフォトダイオード S5980, S5981, S5870

PHOTODIODE
Si PIN
S5980, S5981, S5870
l
l
l
l
l
l
l
S5980: 5 × 5 mm
S5981: 10 × 10 mm
S5870: 10 × 10 mm
: 1.26 mmt
: 0.72 A/W (λ=960 nm)
■
S5980
A
S5981
S5870
30
10.0/4
5.0/4
µm
mm
10.0/2
■
S5980
S5981
30
-40
+100
-40
+125
VR Max.
Topr
Tstg
(Ta=25 °C, 1
■
λ
λp
S
ID
TCID
fc
Ct
NEP
) S5980:
S5981, S5870:
S5870
V
°C
°C
)
S5980
Typ.
Max.
320 1100
960
0.72
λ=λp
VR=10 V
0.3
2
1.15
V R = 10 V, R L =50 Ω, -3 d B
25
VR=10 V, f=1 MHz
10
VR=10 V, λ=λp
1.4 × 10-14
100
50
S5981
Typ.
Max.
320 1100
960
0.72
0.6
4
1.15
20
35
1.9 × 10-14
-
S5870
Typ.
Max.
320 1100
960
0.72
2
10
1.15
10
50
3.5 × 10-14
-
nm
nm
A/W
nA
/°C
MHz
pF
W/Hz1/2
●
●
260 °C
5
●
●
3
24
150 °C
3
5
120 °C
12
15
1
S5980, S5981, S5870
Si PIN
■
■
■
(Typ. Ta=25 ˚C)
0.8
(Typ. )
+1.5
(Typ. Ta=25 ˚C)
10 nA
0.7
S5870
1 nA
+1.0
S5981
(%/˚C)
(A/W)
0.6
0.5
0.4
100 pA
+0.5
S5980
0.3
0.2
10 pA
0
0.1
200
400
600
800
-0.5
190
1000
400
(nm)
600
800
1 pA
0.01
1000
10
100
(V)
KMPDB0123JA
■
■
KMPDB0124JA
(
: mm)
(Typ. Ta=25 ˚C, f=1 MHz)
S5981
1
(nm)
KMPDB0122JA
1 nF
0.1
S5980
S5870
10 pF
a
d
b
c
0.03
10.6 ± 0.2
(4 ×) R0.3
5.0
8.8 ± 0.2
100 pF
S5980
0.46
1.26 ± 0.15
2.5
100 fF
0.1
1
10
0.03
1.5
1 pF
100
(V)
b
NC
KMPDB0125JA
NC
1.5
c
d
NC
NC
NC
(10 ×) 0.6
1.27
a
0.3 mm MAX.
KMPDA0036JB
S5981
S5870
14.5 ± 0.2
14.5 ± 0.2
(4 ×) R0.3
a
NC
a
3.0
3.0
b
NC
NC
b
c
d
(10 ×) 1.2
NC
NC
NC
2.54
2.54
a
0.3 mm MAX.
NC
NC
NC
NC
NC
NC
0.3 mm MAX.
KMPDA0037JA
2
1.8
1.8
(10 ×) 1.2
b
0.03
1.26 ± 0.15
1.8
0.46
1.26 ± 0.15
0.03
10.0
c
16.5 ± 0.2
b
0.03
d
10.0
a
1.8
0.46
16.5 ± 0.2
(4 ×) R0.3
KMPDA0113JA
Si PIN
980-0011
300-2635
105-0001
430-8587
541-0052
1-6-112
5-9-2
3-8-21335
325-64
2-3-1310
435-8558TEL (053) 434-3311
S5980, S5981, S5870
TEL (022) 267-0121
TEL (029) 847-3821
TEL (03) 3436-0491
TEL (053) 459-1112
TEL (06) 6271-0441
FAX (022) 267-0135
FAX (029) 847-8654
FAX (03) 3433-6997
FAX (053) 459-1114
FAX (06) 6271-0450
Cat. No. KPIN1012J03
FAX (053) 434-5184
Feb. 2011 DN
jp.hamamatsu.com
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