PHOTODIODE Si PIN photodiode array S8558 Surface mountable 16-element photodiode array S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. S8558 can be used in a wide range of applications including spectrophotometer and position detection. Features Applications l Active area: 0.7 × 2.0 mm (× 16 elements) l Ceramic chip carrier package for surface mount l Suitable for solder reflow l High sensitivity l Spectrophotometers l Position detection ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 30 -40 to +100 -40 to +125 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temperature coefficient of ID Cut-off frequency Terminal capacitance Noise equivalent power Symbol λ λp S Isc ID TCID fc Ct NEP Condition λ=660 nm λ=780 nm λ=830 nm λ=λp 100 lx VR=10 V VR=10 V, RL=50 Ω λ=830 nm, -3 dB VR=10 V, f=1 MHz VR=10 V, λ=λp Min. - Typ. 320 to 1100 960 0.45 0.57 0.62 0.72 1.0 0.05 1.15 Max. 1.0 - Unit nm nm A/W A/W A/W A/W µA nA times/°C - 25 - MHz - 5 5.6 × 10-15 10 - pF W/Hz1/2 1 Si PIN photodiode array ■ Spectral response S8558 ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 0.8 (Typ. Ta=25 ˚C) 1 nA 0.6 QE=100 % DARK CURRENT PHOTO SENSITIVITY (A/W) 0.7 0.5 0.4 0.3 100 pA 10 pA 0.2 0.1 0 200 400 600 800 1000 1 pA 0.01 1200 WAVELENGTH (nm) 10 100 KMPDB0194EA ■ Cut-off frequency vs. reverse voltage (Typ. Ta=25 ˚C, λ=830 nm, RL=50 Ω) (Typ. Ta=25 ˚C) 100 MHz CUT-OFF FREQUENCY 1 nF TERMINAL CAPACITANCE 1 REVERSE VOLTAGE (V) KMPDB0193EA ■ Terminal capacitance vs. reverse voltage 100 pF 10 pF 1 pF 0.1 0.1 10 MHz 1 MHz 1 10 100 1 REVERSE VOLTAGE (V) 10 100 REVERSE VOLTAGE (V) KMPDB0195EA KMPDB0196EA ■ Dimensional outline (unit: mm) 15.35 13.70 P 0.8 × 15 = 12.0 CH16 2.0 4.85 6.50 CH1 INDEX MARK 0.4 (R0.15) (R0.25) SILICONE RESIN (0.8) PHOTOSENSITIVE SURFACE P 1.27 × 8 = 10.16 2.5 0.6 INDEX MARK 0.4 1.26 ± 0.15 0.7 × 2.0 (× 16 ELEMENTS) ACTIVE AREA 1 3 5 7 9 11 13 15 KC 16 14 12 10 8 6 4 2 NC Tolerance unless otherwise noted: ±0.25 Chip position accuracy with respect to the package center X, Y ≤ ±0.3 KMPDA0144EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KMPD1062E01 Aug. 2006 DN