R1Q3A3636/R1Q3A3618/R1Q3A3609 36-Mbit QDR™II SRAM 4-word Burst REJ03C0295-0003 Preliminary Rev. 0.03 Jul. 31, 2007 Description The R1Q3A3636 is a 1,048,576-word by 36-bit, the R1Q3A3618 is a 2,097,152-word by 18-bit, and the R1Q3A3609 is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package. Features • • • • • • • • • • • • • • 1.8 V ± 0.1 V power supply for core (VDD) 1.4 V to VDD power supply for I/O (VDDQ) DLL circuitry for wide output data valid window and future frequency scaling Separate independent read and write data ports with concurrent transactions 100% bus utilization DDR read and write operation Four-tick burst for reduced address frequency Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two output clocks (C and /C) for precise flight time and clock skew matching-clock and data delivered together to receiving device Internally self-timed write control Clock-stop capability with µs restart User programmable impedance output Fast clock cycle time: 3.0 ns (333 MHz)/3.3 ns (300 MHz)/4.0 ns (250 MHz)/ 5.0 ns (200 MHz)/6.0 ns (167 MHz) Simple control logic for easy depth expansion JTAG boundary scan Notes: QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, NEC, Samsung, and Renesas Technology Corp. Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest Renesas Technology's Sales Dept. regarding specifications. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 1 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 Ordering Information Type No. R1Q3A3636ABG-30R R1Q3A3636ABG-33R R1Q3A3636ABG-40R R1Q3A3636ABG-50R R1Q3A3636ABG-60R R1Q3A3618ABG-30R R1Q3A3618ABG-33R R1Q3A3618ABG-40R R1Q3A3618ABG-50R R1Q3A3618ABG-60R R1Q3A3609ABG-30R R1Q3A3609ABG-33R R1Q3A3609ABG-40R R1Q3A3609ABG-50R R1Q3A3609ABG-60R Organization 1-M word × 36-bit 2-M word × 18-bit 4-M word × 9-bit Cycle time 3.0 ns 3.3 ns 4.0 ns 5.0 ns Clock frequency 333 MHz 300 MHz 250 MHz 200 MHz 6.0 ns 3.0 ns 3.3 ns 4.0 ns 5.0 ns 167 MHz 333 MHz 300 MHz 250 MHz 200 MHz 6.0 ns 3.0 ns 3.3 ns 4.0 ns 5.0 ns 167 MHz 333 MHz 300 MHz 250 MHz 200 MHz 6.0 ns 167 MHz Package Notes Plastic FBGA 165-pin PLBG0165FB-A Notes: 1. Type No. (0:1) R1 : Renesas Memory prefix (2:3) Q2 : QDRII 2-word Burst SRAM Q3 : QDRII 4-word Burst SRAM Q4 : DDRII 2-word Burst SRAM Q5 : DDRII 4-word Burst SRAM Q6 : DDRII 2-word Burst SRAM Separate I/O (4) A : VDD=1.8V (5:6) 36 : Density = 36Mb 72 : Density = 72Mb (7:8) 36 : Organization = x36 18 : Organization = x18 09 : Organization = x9 Pin Arrangement R1Q3A3636 series A B C D E F G H 1 /CQ Q27 D27 D28 Q29 Q30 D30 /DOFF 2 Q18 Q28 D20 D29 Q21 D22 3 NC D18 D19 Q19 Q20 D21 Q22 VREF VDDQ J K L M N P R D31 Q32 Q33 D33 D34 Q35 TDO Q31 D32 Q24 Q34 D26 D35 TCK D23 Q23 D24 D25 Q25 Q26 SA VSS 4 /W SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA 5 /BW2 /BW3 SA 6 /K K NC 7 /BW1 /BW0 SA VSS VSS VDD VDD VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDD VDD VSS VSS SA SA SA SA C /C SA SA SA (Top View) REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 2 of 24 8 /R SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA 9 SA D17 D16 Q16 Q15 D14 Q13 10 NC Q17 Q7 D15 D6 Q14 D13 VDDQ VREF 11 CQ Q8 D8 D7 Q6 Q5 D5 ZQ D12 Q12 D11 D10 Q10 Q9 SA Q4 D3 Q11 Q1 D9 D0 TMS D4 Q3 Q2 D2 D1 Q0 TDI R1Q3A3636/R1Q3A3618/R1Q3A3609 R1Q3A3618 series A B C D E F G H J K L M N P R 1 /CQ NC NC NC NC NC NC /DOFF NC NC NC NC NC NC TDO 2 Q9 NC D11 NC Q12 D13 3 SA D9 D10 Q10 Q11 D12 Q13 VREF VDDQ NC NC Q15 NC D17 NC TCK D14 Q14 D15 D16 Q16 Q17 SA VSS 4 /W SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA 5 /BW1 NC SA 6 /K K NC 7 NC /BW0 SA VSS VSS VDD VDD VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDD VDD VSS VSS SA SA SA SA C /C SA SA SA 8 /R SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA 9 SA NC NC NC NC NC NC 10 NC NC Q7 NC D6 NC NC VDDQ VREF NC NC NC NC NC NC SA Q4 D3 NC Q1 NC D0 TMS 9 SA NC NC NC NC NC NC 10 SA NC NC NC D3 NC NC VDDQ VREF NC NC NC NC NC NC SA Q2 NC NC NC NC D0 TMS 11 CQ Q8 D8 D7 Q6 Q5 D5 ZQ D4 Q3 Q2 D2 D1 Q0 TDI (Top View) R1Q3A3609 series A B C D E F G H J K L M N P R 1 /CQ NC NC NC NC NC NC /DOFF NC NC NC NC NC NC TDO 2 NC NC D5 NC NC D6 3 SA NC NC NC Q5 NC Q6 VREF VDDQ NC NC Q7 NC D8 NC TCK NC NC D7 NC NC Q8 SA VSS 4 /W SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA 5 NC NC SA 6 /K K NC 7 NC /BW SA VSS VSS VDD VDD VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDD VDD VSS VSS SA SA SA SA C /C SA SA SA 8 /R SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VSS VSS SA SA 11 CQ Q4 D4 NC Q3 NC NC ZQ D2 NC Q1 D1 NC Q0 TDI (Top View) Notes: 1. Address expansion order for future higher density SRAMs (i.e. 72Mb → 144Mb →288Mb): (9A → 3A → 10A) → 2A → 7A → 5B. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 3 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 Pin Description Name SA I/O type Input Descriptions /R Input Synchronous read: When low, this input causes the address inputs to be registered and a READ cycle to be initiated. This input must meet setup and hold times around the rising edge of K, and is ignored on the subsequent rising edge of K. /W Input Synchronous write: When low, this input causes the address inputs to be registered and a WRITE cycle to be initiated. This input must meet setup and hold times around the rising edge of K, and is ignored on the subsequent rising edge of K. /BWx Input Synchronous byte writes: When low, these inputs cause their respective byte to be registered and written during WRITE cycles. These signals must meet setup and hold times around the rising edges of K and /K for each of the two rising edges comprising the WRITE cycle. See Byte Write Truth Table for signal to data relationship. K, /K Input Input clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data on the rising edge of K and the rising edge of /K. /K is ideally 180 degrees out of phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges. These balls cannot remain VREF level. C, /C Input Output clock: This clock pair provides a user-controlled means of tuning device output data. The rising edge of /C is used as the output timing reference for first and third output data. The rising edge of C is used as the output timing reference for second and fourth output data. Ideally, /C is 180 degrees out of phase with C. C and /C may be tied high to force the use of K and /K as the output reference clocks instead of having to provide C and /C clocks. If tied high, C and /C must remain high and not to be toggled during device operation. These balls cannot remain VREF level. /DOFF Input DLL disable: When low, this input causes the DLL to be bypassed for stable, low frequency operation. ZQ Input Output impedance matching input: This input is used to tune the device outputs to the system data bus impedance. Q and CQ output impedance are set to 0.2 × RQ, where RQ is a resistor from this ball to ground. This ball can be connected directly to VDDQ, which enables the minimum impedance mode. This ball cannot be connected directly to VSS or left unconnected. TMS TDI TCK Input IEEE1149.1 test inputs: 1.8 V I/O levels. These balls may be left not connected if the JTAG function is not used in the circuit. Input IEEE1149.1 clock input: 1.8 V I/O levels. This ball must be tied to VSS if the JTAG function is not used in the circuit. D0 to Dn Input Synchronous data inputs: Input data must meet setup and hold times around the rising edges of K and /K during WRITE operations. See Pin Arrangement figures for ball site location of individual signals. The ×9 device uses D0 to D8. Remaining signals are not used. The ×18 device uses D0 to D17. Remaining signals are not used. The ×36 device uses D0 to D35. CQ, /CQ Output TDO Output Q0 to Qn Output Synchronous data outputs: Output data is synchronized to the respective C and /C, or to the respective K and /K if C and /C are tied high. This bus operates in response to /R commands. See Pin Arrangement figures for ball site location of individual signals. The ×9 device uses Q0 to Q8. Remaining signals are not used. The ×18 device uses Q0 to Q17. Remaining signals are not used. The ×36 device uses Q0 to Q35. VDD Supply Power supply: 1.8 V nominal. See DC Characteristics and Operating Conditions for range. VDDQ Supply Power supply: Isolated output buffer supply. Nominally 1.5 V. 1.8 V is also permissible. See DC Characteristics and Operating Conditions for range. Synchronous address inputs: These inputs are registered and must meet the setup and hold times around the rising edge of K. All transactions operate on a burst-of-four words (two clock periods of bus activity). These inputs are ignored when device is deselected. Synchronous echo clock outputs: The edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q tristates. IEEE 1149.1 test output: 1.8 V I/O level. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 4 of 24 Notes R1Q3A3636/R1Q3A3618/R1Q3A3609 Name VSS VREF I/O type Supply NC Descriptions Notes Power supply: Ground. HSTL input reference voltage: Nominally VDDQ/2, but may be adjusted to improve system noise margin. Provides a reference voltage for the HSTL input buffers. No connect: These signals are not internally connected. These signals can be left floating or connected to ground to improve package heat dissipation. Notes: 1. All power supply and ground balls must be connected for proper operation of the device. Block Diagram (R1Q3A3636 / R1Q3A3618 / R1Q3A3609 series) 18/19/20 Address Address Registry and Logic 18/19/20 ZQ /R K /K 72 /36 /18 144 /72 /36 MUX Logic Memory Array 72 /36 /18 K REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 5 of 24 Q (Data out) Output Select Output Buffer Data D 36/18/9 Registry (Data in) and 72 /36 /18 Sense Amp /BWx Write Register 4/2/1 Write Driver /W MUX 72 /36 /18 Output Register /R /W K (/K) 36/18/9 2 CQ /CQ C C,/C or K,/K R1Q3A3636/R1Q3A3618/R1Q3A3609 General Description Power-up and Initialization Sequence The following supply voltage application sequence is recommended: VSS, VDD, VDDQ, VREF then VIN. After the stable power, there are three possible sequences. 1. Sequence when DLL disable (/DOFF pin fixed low) Just after the stable power and clock (K, /K, C, /C), 1024 NOP cycles (min.) are required for all operations, including JTAG functions, to become normal. 2a. Sequence controlled by /DOFF pin when DLL enable Just after the stable power and clock (K, /K, C, /C), take /DOFF to be high. The additional 1024 NOP cycles (min.) are required to lock the DLL and for all operations to become normal. 2b. Sequence controlled by Clock (/DOFF pin fixed high) when DLL enable If /DOFF pin is fixed high with unstable clock, the clock (K, /K, C, /C) must be stopped for 30ns (min.). During stop clock stage, C pin must tie low for 30 ns (min.). C, /C, K and /K cannot remain VREF level. The additional 1024 NOP cycles (min.) are required to lock the DLL and for all operations to become normal. Notes: 1. After K or C clock is stopped, clock recovery cycles (1024 NOP cycles (min.)) are required for read/write operations to become normal. 2. When DLL is enable and the operating frequency is changed, DLL reset should be required again. After DLL reset again, the 1024 NOP cycles (min.) are needed to lock the DLL. 1. Sequence when DLL disable (/DOFF pin fixed low) Status Power Up Unstable Clock Stage Stable Clock Stage NOP Stage Normal Operation VDD VDDQ VREF VIN 1024cycle min. C, /C, K, /K 2a. Sequence controlled by /DOFF pin when DLL enable Status Power Up Unstable Clock Stage Stable Clock Stage NOP & DLL Locking Stage VDD VDDQ VREF /DOFF 1024cycle min. C, /C, K, /K REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 6 of 24 Normal Operation R1Q3A3636/R1Q3A3618/R1Q3A3609 2b. Sequence controlled by Clock (/DOFF pin fixed high) when DLL enable Status Power Up Unstable Clock Stage Stop Clock Stage NOP & DLL Locking Stage 30ns min. 1024cycle min. Normal Operation VDD VDDQ VREF /DOFF C, /C, K, /K DLL Constraints 1. DLL uses either K or C clock as its synchronizing input, the input should have low phase jitter which is specified as TKC var. 2. The lower end of the frequency at which the DLL can operate is 100MHz. Programmable Output Impedance 1. Output buffer impedance can be programmed by terminating the ZQ ball to VSS through a precision resistor (RQ). The value of RQ is five times the output impedance desired. The allowable range of RQ to guarantee impedance matching with a tolerance of 10% is 250 Ω typical. The total external capacitance of ZQ ball must be less than 7.5 pF. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 7 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 K Truth Table Operation Write Cycle: Load address, input write data on consecutive K and /K rising edges Read Cycle: Load address, output read data on consecutive C and /C rising edges NOP (No operation) Standby (Clock stopped) K ↑ ↑ ↑ Stopped /R H*7 L*8 H × /W L*8 × H × D or Q Data in Input data D(A+0) D(A+1) D(A+2) D(A+3) Output clock Data out K(t+1)↑ /K(t+1)↑ K(t+2)↑ /K(t+2)↑ Output data Q(A+0) Q(A+1) Q(A+2) Q(A+3) /C(t+1)↑ Output clock D = × or Q = High-Z Previous state C(t+2)↑ /C(t+2)↑ C(t+3)↑ Notes: 1. H: high level, L: low level, ×: don’t care, ↑: rising edge. 2. Data inputs are registered at K and /K rising edges. Data outputs are delivered at C and /C rising edges, except if C and /C are high, then data outputs are delivered at K and /K rising edges. 3. /R and /W must meet setup/hold times around the rising edges (low to high) of K and are registered at the rising edge of K. 4. This device contains circuitry that will ensure the outputs will be in high-Z during power-up. 5. Refer to state diagram and timing diagrams for clarification. 6. When clocks are stopped, the following cases are recommended; the case of K = low, /K = high, C = low and /C = high, or the case of K = high, /K = low, C = high and /C = low. This condition is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 7. If this signal was low to initiate the previous cycle, this signal becomes a “don’t care” for this operation; however, it is strongly recommended that this signal be brought high, as shown in the truth table. 8. This signal was high on previous K clock rising edge. Initiating consecutive READ or WRITE operations on consecutive K clock rising edges is not permitted. The device will ignore the second request. Byte Write Truth Table (x36) Operation Write D0 to D35 Write D0 to D8 Write D9 to D17 Write D18 to D26 K ↑ ↑ ↑ ↑ /K ↑ ↑ ↑ ↑ /BW0 L L L L H H H H /BW1 L L H H L L H H /BW2 L L H H H H L L /BW3 L L H H H H H H ↑ H H H L ↑ H H H L Write nothing ↑ H H H H ↑ H H H H Notes: 1. H: high level, L: low level, ↑: rising edge. 2. Assumes a WRITE cycle was initiated. /BWx can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. Write D27 to D35 REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 8 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 Byte Write Truth Table (x18) Operation Write D0 to D17 Write D0 to D8 Write D9 to D17 Write nothing K ↑ ↑ ↑ ↑ /K ↑ ↑ ↑ ↑ /BW0 L L L L H H H H /BW1 L L H H L L H H Notes: 1. H: high level, L: low level, ↑: rising edge. 2. Assumes a WRITE cycle was initiated. /BWx can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. Byte Write Truth Table (x9) Operation Write D0 to D8 K ↑ /K /BW L Write nothing ↑ ↑ L H ↑ H Notes: 1. H: high level, L: low level, ↑: rising edge. 2. Assumes a WRITE cycle was initiated. /BWx can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 9 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 Bus Cycle State Diagram /R = H & R Count = 4 /R = H Read Port NOP RInit = 0 /R = L Load New Read Address RCount = 0 RInit = 1 Supply voltage provided Always /R = L & RCount = 4 Read Double RCount = R Count + 2 RCount =2 Always Increment Read Address by Two *1 RInit = 0 Power Up Supplu voltage provided Write Port NOP /W = L RInit = 0 Load New Write Address WCount = 0 Always /W = L & WCount = 4 Write Double WCount = W Count + 2 WCount =2 Always Increment Write Address by Two *1 /W = H /W = H & W Count = 4 Notes: 1. The address is concatenated with one additional internal LSB to facilitate burst operation. The address order is always fixed as: xxx…xxx+0, xxx…xxx+1, xxx…xxx+2, xxx…xxx+3. Bus cycle is terminated at the end of this sequence (burst count = 4). 2. Read and write state machines can be active simultaneously. Read and write cannot be simultaneously initiated. Read takes precedence. 3. State machine control timing sequence is controlled by K. Absolute Maximum Ratings Parameter Input voltage on any ball Input/output voltage Core supply voltage Output supply voltage Junction temperature Storage temperature Symbol VIN VI/O VDD VDDQ Tj TSTG Rating −0.5 to VDD + 0.5 (2.5 V max.) −0.5 to VDDQ + 0.5 (2.5 V max.) −0.5 to 2.5 −0.5 to VDD +125 (max) −55 to +125 Unit V V V V °C °C Notes 1, 4 1, 4 1, 4 1, 4 Notes: 1. All voltage is referenced to VSS. 2. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted the Operation Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. 3. These CMOS memory circuits have been designed to meet the DC and AC specifications shown in the tables after thermal equilibrium has been established. 4. The following supply voltage application sequence is recommended: VSS, VDD, VDDQ, VREF then VIN. Remember, according to the Absolute Maximum Ratings table, VDDQ is not to exceed 2.5 V, whatever the instantaneous value of VDDQ. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 10 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 Recommended DC Operating Conditions (Ta = 0 to +70°C) Parameter Symbol Min Typ Max Unit Notes Power supply voltage --core VDD 1.7 1.8 1.9 V Power supply voltage --I/O VDDQ 1.4 1.5 VDD V Input reference voltage --I/O VREF 0.68 0.75 0.95 V 1 Input high voltage VIH (DC) VREF + 0.1 VDDQ + 0.3 V 2, 3 Input low voltage VIL (DC) −0.3 VREF − 0.1 V 2, 3 Notes: 1. Peak to peak AC component superimposed on VREF may not exceed 5% of VREF. 2. Overshoot: VIH (AC) ≤ VDDQ + 0.5 V for t ≤ tKHKH/2 Undershoot: VIL (AC) ≥ −0.5 V for t ≤ tKHKH/2 Power-up: VIH ≤ VDDQ + 0.3 V and VDD ≤ 1.7 V and VDDQ ≤ 1.4 V for t ≤ 200 ms During normal operation, VDDQ must not exceed VDD. Control input signals may not have pulse widths less than tKHKL (min) or operate at cycle rates less than tKHKH (min). During normal operation, VIH(DC) must not exceed VDDQ and VIL(DC) must not be lower than VSS. 3. These are DC test criteria. The AC VIH / VIL levels are defined separately to measure timing parameters. DC Characteristics (Ta = 0 to +70°C, VDD = 1.8V ± 0.1V) Parameter Operating supply current (READ / WRITE) (×9) (×18) (×36) Standby supply current (NOP) (×9 / ×18 / ×36) Parameter Input leakage current Output leakage current Output high voltage Output low voltage Symbol IDD IDD IDD −30 Max 700 750 800 −33 Max 650 700 750 −40 Max 600 650 700 −50 Max 550 600 650 −60 Max 500 550 600 Unit mA mA mA Notes 1, 2, 3 1, 2, 3 1, 2, 3 ISB1 400 380 350 340 330 mA 2, 4, 5 Symbol ILI ILO VOH (Low) VOH VOL (Low) VOL Min −2 −5 VDDQ −0.2 VDDQ/2 −0.08 VSS VDDQ/2 −0.08 Max 2 5 VDDQ VDDQ/2 +0.08 0.2 VDDQ/2 +0.08 Unit µA µA V V V V Test conditions |IOH| ≤ 0.1 mA Note 6 IOL ≤ 0.1 mA Note 7 Notes 10 11 8, 9 8, 9 8, 9 8, 9 Notes: 1. All inputs (except ZQ, VREF) are held at either VIH or VIL. 2. IOUT = 0 mA. VDD = VDD max, tKHKH = tKHKH min. 3. Operating supply currents are measured at 100% bus utilization. 4. All address / data inputs are static at either VIN > VIH or VIN < VIL. 5. NOP currents are valid when entering NOP after all pending READ and WRITE cycles are completed. 6. Outputs are impedance-controlled. |IOH| = (VDDQ/2)/(RQ/5) for values of 175 Ω ≤ RQ ≤ 350 Ω. 7. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 Ω ≤ RQ ≤ 350 Ω. 8. AC load current is higher than the shown DC values. AC I/O curves are available upon request. 9. HSTL outputs meet JEDEC HSTL Class I standards. 10. 0 ≤ VIN ≤ VDDQ for all input balls (except VREF, ZQ, TCK, TMS, TDI ball). 11. 0 ≤ VOUT ≤ VDDQ (except TDO ball), output disabled. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 11 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 Thermal Resistance Parameter Junction to Ambient Junction to Case Note: Symbol θJA θJC Typ 24.5 5.6 Unit °C/W °C/W Notes These parameters are calculated under the condition of wind velocity = 1 m/s. Capacitance (Ta = +25°C, f=1.0MHz, VDD = 1.8V, VDDQ = 1.5V) Parameter Symbol Min Typ Input capacitance CIN 2 Clock input capacitance CCLK 2 Input/output capacitance (D, Q, ZQ) CI/O 3 Notes: 1. These parameters are sampled and not 100% tested. 2. Except JTAG (TCK, TMS, TDI, TDO) pins. Max 3 3 4.5 Unit pF pF pF Test conditions VIN = 0 V VCLK = 0 V VI/O = 0 V Notes 1, 2 1, 2 1, 2 AC Test Conditions (Ta = 0 to +70°C, VDD = 1.8V ±0.1V) Input waveform (Rise/fall time ≤ 0.3 ns) 1.25 V 0.75 V Test points 0.75 V 0.25 V Output waveform VDDQ /2 REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 12 of 24 Test points VDDQ /2 R1Q3A3636/R1Q3A3618/R1Q3A3609 Output load condition 0.75 V VDDQ /2 VREF 50 Ω Z0 = 50 Ω Q SRAM 250 Ω ZQ AC Operating Conditions Parameter Input high voltage Input low voltage Symbol VIH (AC) VIL (AC) Min VREF + 0.2 Typ Max VREF − 0.2 Unit V V Notes 1, 2, 3, 4 1, 2, 3, 4 Notes: 1. All voltages referenced to VSS (GND). 2. These conditions are for AC functions only, not for AC parameter test. 3. Overshoot: VIH (AC) ≤ VDDQ + 0.5 V for t ≤ tKHKH/2 Undershoot: VIL (AC) ≥ −0.5 V for t ≤ tKHKH/2 Power-up: VIH ≤ VDDQ + 0.3 V and VDD ≤ 1.7 V and VDDQ ≤ 1.4 V for t ≤ 200 ms During normal operation, VDDQ must not exceed VDD. Control input signals may not have pulse widths less than tKHKL (min) or operate at cycle rates less than tKHKH (min). 4. To maintain a valid level, the transitioning edge of the input must: a. Sustain a constant slew rate from the current AC level through the target AC level, VIL (AC) or VIH (AC). b. Reach at least the target AC level. c. After the AC target level is reached, continue to maintain at least the target DC level, VIL (DC) or VIH (DC). REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 13 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 AC Characteristics (Ta = 0 to +70°C, VDD = 1.8V ± 0.1V) Parameter Symbol Average clock cycle time (K, /K, C, /C) -30 -33 -40 -50 -60 Unit Notes Min Max Min Max Min Max Min Max Min Max tKHKH 3.00 3.47 3.30 4.20 4.00 5.25 5.00 6.30 6.00 8.00 ns Clock phase jitter (K, /K, C, /C) tKC var 0.20 0.20 0.20 0.20 0.20 ns Clock high time (K, /K, C, /C) tKHKL 1.20 1.32 1.60 2.00 2.40 ns Clock low time (K, /K, C, /C) tKLKH 1.20 1.32 1.60 2.00 2.40 ns Clock to /clock (K to /K, C to /C) tKH/KH 1.35 1.49 1.80 2.20 2.70 ns /Clock to clock (/K to K, /C to C) t/KHKH 1.35 1.49 1.80 2.20 2.70 ns Clock to data clock (K to C, /K to /C) tKHCH 0 0.60 0 0.75 0 1.10 0 1.60 0 2.10 ns DLL lock time (K, C) tKC lock 1,024 1,024 1,024 1,024 1,024 Cycle 2 K static to DLL reset tKC reset 30 30 30 30 30 ns 7 C, /C high to output valid tCHQV 0.45 0.45 0.45 0.45 0.50 ns C, /C high to output hold tCHQX −0.45 −0.45 −0.45 −0.45 −0.50 ns C, /C high to echo clock valid tCHCQV 0.45 0.45 0.45 0.45 0.50 ns C, /C high to echo clock hold tCHCQX −0.45 −0.45 −0.45 −0.45 −0.50 ns CQ, /CQ high to output valid tCQHQV 0.25 0.27 0.30 0.35 0.40 ns 4, 7 CQ, /CQ high to output hold tCQHQX −0.25 −0.27 −0.30 −0.35 −0.40 ns 4, 7 C, /C high to output high-Z tCHQZ 0.45 0.45 0.45 0.45 0.50 ns 5 C, /C high to output low-Z tCHQX1 −0.45 −0.45 −0.45 −0.50 ns 5 −0.45 REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 14 of 24 3 R1Q3A3636/R1Q3A3618/R1Q3A3609 Parameter Symbol Address valid to K rising edge -30 -33 -40 -50 -60 Unit Notes Min Max Min Max Min Max Min Max Min Max tAVKH 0.40 0.40 0.50 0.60 0.70 ns 1 Control inputs valid to K rising edge tIVKH 0.40 0.40 0.50 0.60 0.70 ns 1 Data-in valid to K, /K rising edge tDVKH 0.28 0.30 0.35 0.40 0.50 ns 1 K rising edge to address hold tKHAX 0.40 0.40 0.50 0.60 0.70 ns 1 K rising edge to control inputs hold tKHIX 0.40 0.40 0.50 0.60 0.70 ns 1 K, /K rising edge to data-in hold tKHDX 0.28 0.30 0.35 0.40 0.50 ns 1 Notes: 1. This is a synchronous device. All addresses, data and control lines must meet the specified setup and hold times for all latching clock edges. 2. VDD slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention. DLL lock time begins once VDD and input clock are stable. It is recommended that the device is kept inactive during these cycles. 3. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a ±0.1 ns variation from echo clock to data. The datasheet parameters reflect tester guardbands and test setup variations. 5. Transitions are measured ±100 mV from steady-state voltage. 6. At any given voltage and temperature tCHQZ is less than tCHQX1 and tCHQZ less than tCHQV. 7. These parameters are sampled. Remarks: 1. 2. 3. 4. 5. Test conditions as specified with the output loading as shown in AC Test Conditions unless otherwise noted. Control input signals may not be operated with pulse widths less than tKHKL (min). If C, /C are tied high, K, /K become the references for C, /C timing parameters. VDDQ is +1.5 V DC. Control signals are /R, /W, /BW, /BW0, /BW1, /BW2 and /BW3. BWn signals must operate at the same timing as Data in. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 15 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 Timing Waveforms Read and Write Timing 1 2 NOP 3 READ 4 WRITE 5 READ 6 WRITE 7 NOP 8 NOP 9 NOP K tKHKL tKHKH tKH/KH tKLKH t/KHKH /K /R tIVKH tKHIX /W tIVKH A0 Address tAVKH A1 tKHIX A2 tKHAX A3 D10 D11 D12 D13 D30 D31 D32 D33 Data in tDVKH tKHDX Q00 Qx3 Q01 Q02 tDVKH Q03 Q20 tKHDX Q21 Q22 Q23 Data out tCHQZ -tCHQX1 tCHQV -tCHQX tCHQV -tCHQX tCQHQV -tCQHQX CQ tCHCQV -tCHCQX /CQ tCHCQV -tCHCQX C tKHKL tKHCH tKHKH tKH/KH tKLKH t/KHKH /C tKHCH Notes: 1. Q00 refers to output from address A0+0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1. 2. Outputs are disable (high-Z) one clock cycle after a NOP. 3. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11. Write data is forwarded immediately as read results. 4. To control read and write operations, /BW signals must operate at the same timing as Data in. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 16 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 JTAG Specification These products support a limited set of JTAG functions as in IEEE standard 1149.1. Disabling the Test Access Port It is possible to use this device without utilizing the TAP. To disable the TAP controller without interfering with normal operation of the device, TCK must be tied to VSS to preclude mid level inputs. TDI and TMS are designed so an undriven input will produce a response identical to the application of a logic 1,and may be left unconnected. But they may also be tied to VDD through a 1kΩ resistor.TDO should be left unconnected. Test Access Port (TAP) Pins Symbol I/O TCK Pin assignments 2R Description Notes TMS 10R Test mode select. This is the command input for the TAP controller state machine. TDI 11R Test data input. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and the instruction that is currently loaded in the TAP instruction. TDO 1R Test data output. Output changes in response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. Test clock input. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. Notes: The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held high for five rising edges of TCK. The TAP controller state is also reset on SRAM POWER-UP. TAP DC Operating Characteristics (Ta = 0 to +70°C, VDD = 1.8V ± 0.1V) Parameter Input high voltage Input low voltage Input leakage current Output leakage current Symbol VIH VIL ILI ILO Min +1.3 −0.3 −5.0 −5.0 Typ Max VDD + 0.3 +0.5 +5.0 +5.0 Unit V V µA µA VOL1 0.2 V VOL2 0.4 V Output high voltage VOH1 1.6 V VOH2 1.4 V Notes: 1. All voltages referenced to VSS (GND). 2. Power-up: VIH ≤ VDDQ + 0.3 V and VDD ≤ +1.7 V and VDDQ ≤ +1.4 V for t ≤ 200 ms. 3. In “EXTEST” mode and “SAMPLE” mode, VDDQ is nominally 1.5 V. 4. ZQ: VIH = VDDQ. Output low voltage REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 17 of 24 Notes 0 V ≤ VIN ≤ VDD 0 V ≤ VIN ≤ VDD, output disabled IOLC = 100 µA IOLT = 2 mA |IOHC| = 100 µA |IOHT| = 2 mA R1Q3A3636/R1Q3A3618/R1Q3A3609 TAP AC Test Conditions Parameter Symbol Ta VREF VIL, VIH tr, tf Temperature Input timing measurement reference levels Input pulse levels Input rise/fall time Output timing measurement reference levels Test load termination supply voltage (VTT) Output load Conditions 0 ≤ Ta ≤ +70 0.9 0 to 1.8 ≤ 1.0 0.9 0.9 See figures Unit °C V V ns V V Input waveform 1.8 V 0.9 V Test points 0.9 V 0V Output waveform 0.9 V Test points 0.9 V Output load condition VTT = 0.9 V DUT 50 Ω TDO Z0 = 50 Ω 20 pF External Load at Test REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 18 of 24 Notes R1Q3A3636/R1Q3A3618/R1Q3A3609 TAP AC Operating Characteristics (Ta = 0 to +70°C, VDD = 1.8V ±0.1V) Parameter Symbol Min Typ Max Unit Test clock (TCK) cycle time tTHTH 100 ns TCK high pulse width tTHTL 40 ns TCK low pulse width tTLTH 40 ns Test mode select (TMS) setup tMVTH 10 ns TMS hold tTHMX 10 ns Capture setup tCS 10 ns Capture hold tCH 10 ns TDI valid to TCK high tDVTH 10 ns TCK high to TDI invalid tTHDX 10 ns TCK low to TDO unknown tTLQX 0 ns TCK low to TDO valid tTLQV 20 ns Notes: 1. tCS + tCH defines the minimum pause in RAM I/O pad transitions to assure pad data capture. TAP Controller Timing Diagram tTHTH tTHTL tTLTH TCK tMVTH tTHMX TMS tDVTH tTHDX TDI tTLQV TDO tTLQX PI (SRAM) REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 19 of 24 tCS tCH Notes 1 1 R1Q3A3636/R1Q3A3618/R1Q3A3609 Test Access Port Registers Register name Instruction register Bypass register ID register Boundary scan register Length 3 bits 1 bits 32 bits 109 bits Symbol IR [2:0] BP ID [31:0] BS [109:1] Notes TAP Controller Instruction Set IR2 0 IR1 0 IR0 0 Instruction EXTEST Description 0 0 1 IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in capture-DR mode and places the ID register between the TDI and TDO balls in shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the Test-Logic-Reset state. 0 1 0 SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (high-Z), moving the TAP controller into the capture-DR state loads the data in the RAMs input into the boundary scan register, and the boundary scan register is connected between TDI and TDO when the TAP controller is moved to the shift-DR state. 0 1 1 RESERVED The RESERVED instructions are not implemented but are reserved for future use. Do not use these instructions. 1 0 0 SAMPLE (/PRELOAD) When the SAMPLE instruction is loaded in the instruction register, moving the TAP controller into the capture-DR state loads the data in the RAMs input and I/O buffers into the boundary scan register. Because the RAM clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state). Although allowing the TAP to SAMPLE metastable input will not harm the device, repeatable results cannot be expected. Moving the controller to shift-DR state then places the boundary scan register between the TDI and TDO balls. 1 1 1 0 1 1 1 0 1 RESERVED RESERVED BYPASS The EXTEST instruction allows circuitry external to the component package to be tested. Boundary scan register cells at output balls are used to apply test vectors, while those at input balls capture test results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the boundary scan register using the PRELOAD instruction. Thus, during the Update-IR state of EXTEST, the output driver is turned on and the PRELOAD data is driven onto the output balls. Notes 1, 2, 3 3, 4 3 The BYPASS instruction is loaded in the instruction register when the bypass register is placed between TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. Notes: 1. Data in output register is not guaranteed if EXTEST instruction is loaded. 2. After performing EXTEST, power-up conditions are required in order to return part to normal operation. 3. RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the boundary scan register. 4. Clock recovery initialization cycles are required to return from the SAMPLE-Z instruction. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 20 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 Boundary Scan Order Boundary Scan Order Bit # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Ball ID 6R 6P 6N 7P 7N 7R 8R 8P 9R 11P 10P 10N 9P 10M 11N 9M 9N 11L 11M 9L 10L 11K 10K 9J 9K 10J 11J 11H 10G 9G 11F 11G 9F 10F 11E 10E 10D 9E 10C 11D x9 /C C SA SA SA SA SA SA SA Q0 D0 NC NC NC NC NC NC Q1 D1 NC NC NC NC NC NC Q2 D2 ZQ NC NC NC NC NC NC Q3 D3 NC NC NC NC Signal names x18 /C C SA SA SA SA SA SA SA Q0 D0 NC NC Q1 D1 NC NC Q2 D2 NC NC Q3 D3 NC NC Q4 D4 ZQ NC NC Q5 D5 NC NC Q6 D6 NC NC Q7 D7 41 42 43 44 45 46 47 48 49 9C 9D 11B 11C 9B 10B 11A 10A 9A NC NC Q4 D4 NC NC CQ SA SA NC NC Q8 D8 NC NC CQ NC SA REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 21 of 24 x36 /C C SA SA SA SA SA SA SA Q0 D0 D9 Q9 Q1 D1 D10 Q10 Q2 D2 D11 Q11 Q3 D3 D12 Q12 Q4 D4 ZQ D13 Q13 Q5 D5 D14 Q14 Q6 D6 D15 Q15 Q7 D7 Bit # 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 Ball ID 8B 7C 6C 8A 7A 7B 6B 6A 5B 5A 4A 5C 4B 3A 2A 1A 2B 3B 1C 1B 3D 3C 1D 2C 3E 2D 2E 1E 2F 3F 1G 1F 3G 2G 1H 1J 2J 3K 3J 2K D16 Q16 Q8 D8 D17 Q17 CQ NC SA 90 91 92 93 94 95 96 97 98 1K 2L 3L 1M 1L 3N 3M 1N 2M x9 SA SA NC /R NC /BW K /K NC NC /W SA SA SA VSS /CQ NC NC NC NC NC NC NC NC Q5 D5 NC NC NC NC NC NC Q6 D6 /DOFF NC NC NC NC NC Signal names x18 SA SA NC /R NC /BW0 K /K NC /BW1 /W SA SA SA VSS /CQ Q9 D9 NC NC Q10 D10 NC NC Q11 D11 NC NC Q12 D12 NC NC Q13 D13 /DOFF NC NC Q14 D14 NC x36 SA SA NC /R /BW1 /BW0 K /K /BW3 /BW2 /W SA SA NC VSS /CQ Q18 D18 D27 Q27 Q19 D19 D28 Q28 Q20 D20 D29 Q29 Q21 D21 D30 Q30 Q22 D22 /DOFF D31 Q31 Q23 D23 D32 NC Q7 D7 NC NC NC NC NC NC NC Q15 D15 NC NC Q16 D16 NC NC Q32 Q24 D24 D33 Q33 Q25 D25 D34 Q34 R1Q3A3636/R1Q3A3618/R1Q3A3609 Bit # 99 100 101 102 103 104 Ball ID 3P 2N 2P 1P 3R 4R x9 Q8 D8 NC NC SA SA Signal names x18 Q17 D17 NC NC SA SA x36 Q26 D26 D35 Q35 SA SA Bit # 105 106 107 108 109 Ball ID 4P 5P 5N 5R Signal names x9 x18 x36 SA SA SA SA SA SA SA SA SA SA SA SA INTERNAL INTERNAL INTERNAL Notes: In boundary scan mode, 1. Clock balls (K, /K, C, /C) are referenced to each other and must be at opposite logic levels for reliable operation. 2. CQ and /CQ data are synchronized to the respective C and /C (except EXTEST, SAMPLE-Z). 3. If C and /C tied high, CQ is generated with respect to K and /CQ is generated with respect to /K (except EXTEST, SAMPLE-Z). 4. ZQ must be driven to VDDQ supply to ensure consistent results. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 22 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 ID Register Part R1Q3A3636 R1Q3A3618 R1Q3A3609 Revision number (31:29) 000 000 000 Notes: 1. Type number MMM :Density WW :Organization Q :QDR/DDR B :Burst lengths S :I/O Type number (28:12) 0 0MMM 0WW0 10Q0 B0S0 0 0010 0110 1010 1010 0 0010 0100 1010 1010 0 0010 0000 1010 1010 011:72Mb, 11: x 36, 1: QDR, 1: 4-word burst, 1: Separate I/O, 010:36Mb, 10: x 18, 0: DDR 0: 2-word burst 0: Common I/O Vendor JEDEC code (11:1) 0100 0100 011 0100 0100 011 0100 0100 011 001:18Mb 00: x 9, Start bit (0) 1 1 1 01: x 8 TAP Controller State Diagram Package Dimensions 1 Test Logic Reset 0 Run Test/Idle 1 0 Select DR Scan 1 1 0 1 Capture DR Capture IR 1 Exit1 DR 0 Shift IR 1 1 0 Pause DR Exit2 DR 0 1 Exit2 IR 1 Update DR Notes: 0 Pause IR 1 1 1 Exit1 IR 0 1 0 0 Shift DR 0 0 0 0 1 Select IR Scan 0 Update IR 1 0 The value adjacent to each state transition in this figure represents the signal present at TMS at the time of a rising edge at TCK. No matter what the original state of the controller, it will enter Test-Logic-Reset when TMS is held high for at least five rising edges of TCK. REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 23 of 24 R1Q3A3636/R1Q3A3618/R1Q3A3609 Package Dimensions R1Q3A3636/R1Q3A3618/R1Q3A3609 (PLBG0165FB-A) JEITA Package Code P-LBGA165-15x17-1.00 RENESAS Code PLBG0165FB-A Previous Code BP-165A MASS[Typ.] 0.7g D A B E INDEX y1 S y A1 A S S e e R P N M Reference Symbol L Dimension in Millimeters Min Nom Max J D 14.90 15.00 15.10 H E 16.90 17.00 17.10 G v K F w E D A 1.34 1.40 1.46 C A1 0.27 0.32 0.37 B e A b 1 2 3 4 5 6 φ b 7 8 9 0.45 0.50 0.55 x 0.20 y 0.15 y1 0.25 10 11 φ× M S A B φ0.07 M S SD SE ZD ZE REJ03C0295-0003 Rev.0.03 Jul. 31, 2007 Page 24 of 24 1.00 Revision History Rev. Date 0.01 0.02 Sep. 25, 2006 Feb. 22, 2007 0.03 Jul. 31, 2007 R1Q3A3636/R1Q3A3618/R1Q3A3609 Data Sheet Contents of Modification Description Page Initial issue 24 Package Dimensions PLBG0165FC-A to PLBG0165FB-A 6 General Description: Adding description for clock stop to reset DLL. 11 DC Characteristics Fixing data sheet errata for standby supply current (NOP) since the previous value were same as 1st generation devices. ISB1 (-30R/-33R/-40R/-50R/-60R) (max): 400/380/350/340/330 mA Capacitance: Reducing capacitance value to describe actual performance. 12 CIN (typ/max): 2/3 pF CCLK (typ/max): 2/3 pF CI/O (typ/max): 3/4.5 pF AC Characteristics 14 Average clock cycle time is enlarged. tKHKH (-60R) (max): 8.00 ns Clock to data clock is tightened to reduce switching noise between outputs switching while inputs are being sampled. tKHCH (-30R/-33R/-40R/-50R/-60R) (max): 0.60/0.75/1.10/1.60/2.10 ns Sales Strategic Planning Div. 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