MZ0912B50Y NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MZ0912B50Y is Designed for General Purpose Class C Power Amplifier Applications up to 1215 MHz. PACKAGE STYLE .400 2L FLG L N FEATURES: J O A B • PG = 7.0 dB min.at 50 W / 1215 MHz • Common Base • Omnigold™ Metalization System E K D C .062 x 45° M Ø.120 G F P I H Q R MAXIMUM RATINGS VCE D IM 20 V M IN IM U M M AXIM U M inches / m m inches / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 C VCB 65 V VEB 3.0 V D .230 / 5.84 F G .003 / 0.08 H .118 / 3.00 PDISS 150 W @ TC = 25 °C TJ -65 °C to +200 °C -65 °C to +200 °C θJC 1.16 °C/W SYMBOL .131 / 3.33 .063 / 1.60 J .650 / 16.51 .386 / 9.80 L .900 / 22.86 M .450 / 11.43 .125 / 3.18 N TSTG .006 / 0.15 I K CHARACTERISTICS .407 / 10.34 .193 / 4.90 E 3.0 A IC .395 / 10.03 O .050 / 1.27 .405 / 10.29 P Q .170 / 4.32 R .062 / 1.58 TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 65 V 200 mA ICES VCE = 60 V 20 mA IEBO VEB = 1.5 V 200 µA PG ηC VCC = 50 POUT = 50 W f = 960 - 1215 MHz 7.0 42 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. C 1/2 MZ0912B50Y ERROR! REFERENCE SOURCE NOT FOUND. TEST CIRCUIT A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2