PTB20038 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 6L FLG The ASI PTB20038 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES: • 25 W, 860-900 MHz • Silicon Nitride Passivated • Omnigold™ Metalization System MAXIMUM RATINGS IC 6.7 A VCB 50 V PDISS 65 W @ TC = 25 °C TJ -40 °C to +150 °C TSTG -40 °C to +150 °C θJC 2.7 °C/W CHARACTERISTICS 1 = COLLECTOR 3,4,5,6 = EMITTER TC = 25 °C NONETEST CONDITIONS SYMBOL 2 = BASE MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 25 V BVCES IC = 100 mA 55 V BVEBO IE = 5.0 mA 3.5 V hFE VCE = 5.0 V IC = 1.0 A PG ηC VCC = 25 V POUT = 25 W f = 900 MHz 9.0 50 PG ηC Ψ VCC = 25 V ICQ POUT = 10 W f = 900 MHz 10 35 20 100 dB % 11 30:1 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --- dB % --- REV. A 1/2 ERROR! REFERENCE SOURCE NOT FOUND. PTB23005X A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 2/2