NK3D160..(R) Series SEMICONDUCTOR RoHS RoHS THREE PHASE DIODE MODULE Features 1. NK3D160..(R) series Diode modules are designed for 3 phase rectification 2. Voltage rating up to 1600V 3. High surge capability 160 06 (R) B (1) (2) (3) (4) (5) 9 NK3D 22.4 36.6 Ordering code 29.9 Half Bridge (1) For Three Phase Diode modules 26 26 28 (2) Maximum average forward current , A 13 (4) Blank - for common cathode to base plate R- for common anode to base plate 34 (3) Voltage code , V ( code x 10 = / V RRM ) 2- 6.2 NK3D 16 93 3-M6 Base Plate 108 NK3D..(R) All dimensions in millimeters(inches) Base Plate Electrical Characteristics Parameter I Condition Max. Value Unit I F(AV) Average forward current 180 half sine wave , 50 Hz Single side cooled , Tc =115 C 160 A F(RMS) R.M.S. Forward current Single side cooled , Tc =115 C 254 A V RRM Repetitive peak reverse voltage t p =10 ms V RMS = V RRM x 1.1 200 to 1600 V I RRM Repetitive peak reverse current V R = V RRM 12 mA I FSM Peak one-cycle surge ( non-repetitive forward current ) 5800 A 33.7 KA S 1.57 V 2 I t 10 ms duration V R = 0.6 V RRM Max. Permissible surge energy 2 V FM Peak forward voltage drop V FO Forward conduction threshold voltage 0.8 V rf Forward conduction slope resistance 1.53 mΩ -40 to 150 C 0.24 C/ W 340 g 2.7 NM 2.7 NM Tstg I FM = 180A Storage temperature range R th(J-C) Thermal resistance Wt Approximate weight Busbar to module ( M 5 ) T Module to heatsink ( M 6 ) Single side cooled A mounting compound is recommened. Torque should be rechecked after a period of 3 hours. NK3D160..(R) Series SEMICONDUCTOR Fig.2 Transient thermal impedance , C/W Instantaneous forward voltage , V Fig.1 Time , S Instantaneous forward current , A Fig.3 Case Temperature , C Mean forward dissipation , W Fig.4 Mean forward current , A Mean forward current , A Fig.6 Case Temperature , C Mean forward dissipation , W Fig.5 Mean forward current , A Mean forward current , A RoHS RoHS