MTP50D Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Three-Phase Bridge Rectifier, 50A MTP5008D Thru MTP5018D ( MTP50-08 Thru MTP50-18 ) 72 60 20 5-M5 20 ~ ~ ~ 42 21.6 5.3 Ø5.3 - + 3 29 30 23 All dimensions in millimeters FEATURES UL recognition file number E320098 Typical IR less than 2.0 µA High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for big power supply, field supply for DC motor, industrial automation applications. ADVANTAGE International standard package Epoxy meets UL 94 V-O flammability rating Small volume, light weight Small thermal resistance Weight: 170g (6 ozs) Page 1 of 3 PRIMARY CHARACTERRISTICS IF(AV) 50A V RRM 800V to 1800V I FSM 750A IR 20 µA VF 1.2V T J max. 150ºC RoHS RoHS MTP50D Series SEMICONDUCTOR Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) MTP50..D PARAMETER UNIT SYMBOL 08 10 12 16 18 Maximum repetitive peak reverse voltage V RRM 800 1000 1200 1600 1800 V Peak reverse non-repetitive voltage V RSM 900 1100 1300 1700 1900 V Maximum DC blocking voltage V DC 800 1000 1200 1600 1800 V Maximum average forward rectified output current I F(AV) 50 A I FSM 750 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 2800 A 2s RMS isolation voltage from case to leads V ISO 2500 V TJ -40 to 150 ºC T STG -40 to 125 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range Storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TEST CONDITIONS SYMBOL Maximum instantaneous forward drop per diode I F = 50A VF Maximum reverse DC current at rated DC blocking T A = 25°C voltage per diod T A = 150°C PARAMETER MTP50..D 08 10 12 UNIT 16 18 1.2 V 20 IR µA 4000 THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted) MTP50..D TEST CONDITIONS PARAMETER UNIT SYMBOL 08 Typical thermal resistance junction to case Single-side heat dissipation, sine half wave Mounting torque ± 10 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink M5 to terminal M5 10 R θJC (1) 12 16 18 0.3 4 Nm 4 Approximate weight 170 Notes (1) With heatsink, single side heat dissipation, half sine wave. (2) M5 screw. Device code MTP 50 16 D 3 4 1 - Module type: ”MTP” for 3Ø Brıdge 2 - I F(AV) rating:"50" for 50A 3 - Voltage code:code x 100 = VRRM 4 - Package Outline: D type package Page 2 of 3 °C/W (MTP5016D=MTP50-16) g MTP50D Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Thermal lmpedance (junction to case) Fig.1 Forward characteristic 3 Transient thermal impedance (°C/W) Forward voltage drop (V) 3.5 Tj=150°C 2.5 2 1.5 1 0.5 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 10 1000 100 0.001 0.01 Forward current (A) 1 10 Time (s) Fig.4 Case temperature vs output current Fig.3 Power dissipation vs. output current 250 70 Output Current (A) Power dissipation (W) 0.1 200 150 100 60 50 40 30 20 50 10 0 0 0 10 20 30 40 50 60 70 20 60 80 100 120 140 160 180 200 Case Temperature (°C) Output current (A) Fig.6 I2t characteristic Fig.5 Forward surge current vs. cycle 0.8 3.2 0.7 2.8 2.4 0.6 3 2 I t (10 A S) 0.5 2 2 Forward surge current (KA) 40 0.4 1.6 0.3 1.2 0.2 0.8 1 10 100 10 1 Time (ms) Cycle @ 50Hz Page 3 of 3