NELLSEMI MTP50D

MTP50D Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Three-Phase Bridge Rectifier, 50A
MTP5008D Thru MTP5018D
( MTP50-08 Thru MTP50-18 )
72
60
20
5-M5
20
~
~
~
42
21.6
5.3
Ø5.3
-
+
3
29
30
23
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
Weight: 170g (6 ozs)
Page 1 of 3
PRIMARY CHARACTERRISTICS
IF(AV)
50A
V RRM
800V to 1800V
I FSM
750A
IR
20 µA
VF
1.2V
T J max.
150ºC
RoHS
RoHS
MTP50D Series
SEMICONDUCTOR
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
MTP50..D
PARAMETER
UNIT
SYMBOL
08
10
12
16
18
Maximum repetitive peak reverse voltage
V RRM
800
1000
1200
1600
1800
V
Peak reverse non-repetitive voltage
V RSM
900
1100
1300
1700
1900
V
Maximum DC blocking voltage
V DC
800
1000
1200
1600
1800
V
Maximum average forward rectified output current
I F(AV)
50
A
I FSM
750
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
I 2t
2800
A 2s
RMS isolation voltage from case to leads
V ISO
2500
V
TJ
-40 to 150
ºC
T STG
-40 to 125
ºC
Peak forward surge current single sine-wave superimposed on
rated load
Operating junction storage temperature range
Storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TEST
CONDITIONS
SYMBOL
Maximum instantaneous forward drop per diode
I F = 50A
VF
Maximum reverse DC current at rated DC blocking
T A = 25°C
voltage per diod
T A = 150°C
PARAMETER
MTP50..D
08
10
12
UNIT
16
18
1.2
V
20
IR
µA
4000
THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted)
MTP50..D
TEST CONDITIONS
PARAMETER
UNIT
SYMBOL
08
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
Mounting
torque
± 10 %
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
to heatsink M5
to terminal M5
10
R θJC (1)
12
16
18
0.3
4
Nm
4
Approximate weight
170
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M5 screw.
Device code
MTP
50
16
D
3
4
1
-
Module type: ”MTP” for 3Ø Brıdge
2
-
I F(AV) rating:"50" for 50A
3
-
Voltage code:code x 100 = VRRM
4
-
Package Outline: D type package
Page 2 of 3
°C/W
(MTP5016D=MTP50-16)
g
MTP50D Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.2 Thermal lmpedance (junction to case)
Fig.1 Forward characteristic
3
Transient thermal impedance (°C/W)
Forward voltage drop (V)
3.5
Tj=150°C
2.5
2
1.5
1
0.5
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
10
1000
100
0.001
0.01
Forward current (A)
1
10
Time (s)
Fig.4 Case temperature vs output current
Fig.3 Power dissipation vs. output current
250
70
Output Current (A)
Power dissipation (W)
0.1
200
150
100
60
50
40
30
20
50
10
0
0
0
10
20
30
40
50
60
70
20
60
80 100 120 140 160 180 200
Case Temperature (°C)
Output current (A)
Fig.6 I2t characteristic
Fig.5 Forward surge current vs. cycle
0.8
3.2
0.7
2.8
2.4
0.6
3 2
I t (10 A S)
0.5
2
2
Forward surge current (KA)
40
0.4
1.6
0.3
1.2
0.2
0.8
1
10
100
10
1
Time (ms)
Cycle @ 50Hz
Page 3 of 3