V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FINISH NEXCW Series RoHS Compliant High Temperature Reflow +260°C CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +85°C 240 hours Temperature Cycling (5 cycles, -25 ~ +70°C Humidity Resistance (240 hours @ 40°C/90% RH) 3.5 & 5.5VDC 0.047F ~ 0.47F (47,000μF ~ 470,000μF) -40°C ~ +85°C +80%/-20% (Z) Δ Capacitance Change Maximum ESR Current at 30 minutes Δ Capacitance Change Maximum ESR Current at 30 minutes Δ Capacitance Change Maximum ESR Super Capacitor Application Guide Current at 30 minutes Within ±30% of initial measured value Less than 200% of the specified maximum value Less than 200% of the specified maximum value Within +80%/-20% of specified value Less than specified maximum value Less than specified maximum value Within ±20% of initial measured value Less than 120% of the specified maximum value Less than 120% of the specified maximum value STANDARD VALUES AND SPECIFICATIONS Capacitance Value (F) Discharge Working Voltage (VDC) Max. Current @ 30 minutes (mA) Max. ESR @ 1KHz (Ω) NEXCW104Z3.5V10.7X5.5TRF 0.10 3.5 0.090 100 NEXCW224Z3.5V10.7X5.5TRF 0.22 3.5 0.200 50 NIC P/N NEXCW474Z3.5V10.7X8.5TRF 0.47 3.5 0.420 50 NEXCW473Z5.5V10.7X5.5TRF 0.047 5.5 0.071 100 NEXCW104Z5.5V10.7X5.5TRF 0.10 5.5 0.150 50 NEXCW224Z5.5V10.7X8.5TRF 0.22 5.5 0.330 50 Temperature - Deg. C HIGH TEMPERATURE REFLOW PROFILE Peak Temperature (260°C) 250 200 Time above 217°C 70 sec. max. 150 100 Cool Down Time above 170°C 50 sec. max. 50 25 0 Pre-heat 150°C ~ 200°C 150 sec. max. Peak Temperature +260°C Time above +255°C 10 sec. max. Time above +230°C 45 sec. max. Time above +220°C 60 sec. max. Time above +217°C 70 sec. max. 150°C ~ +200°C (with time above +170°C 50 sec. max.) 150 sec. max. Time 1. The temperatures shown are the surface temperature values on the top of the can and on the capacitor terminals. 2. 2x reflow process maximum. Capacitor should be allowed to return to room temperature before second reflow process. PRECAUTIONS WASHING is NOT RECOMMENDED. Additional precautions can be found at www.niccomp.com/precautions If in doubt or uncertainty, please review your specific application - process details with NIC’s technical support personnel: [email protected] NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com SPECIFICATIONS ARE SUBJECT TO CHANGE www.SMTmagnetics.com 1 V-Chip Memory Back-Up Capacitors NEXCW Series + CASE DIMENSIONS (mm) Case Size 10.7 x 5.5 10.7 x 8.5 Dφ ± 10.7 10.7 L max. 5.5 8.5 A/B ±0.2 10.8 10.8 I 3.9 ±0.5 3.9 ±0.5 W 1.2 ± 0.1 1.2 ± 0.1 P 5.0 5.0 I I I - w Dφ A 0.3mm max. L P B LAND PATTERN DIMENSIONS (mm) Case Diameter 10.7 R S T 5.0 4.9 2.5 COMPONENT OUTLINE T S S R CARRIER TAPE DIMENSIONS (mm) Case Size 10.7 x 5.5 10.7 x 8.5 A 11.4 11.4 B 13.0 13.0 D 1.55 1.55 E 1.75 1.75 F 11.5 11.5 P 4.0 4.0 P P1 16.0 16.0 T1 0.4 0.4 T2 6.0 8.4 1.5∅ D +0.1/- W 24.0 24.0 Quantity/Reel 1,000 500 1.75 ± T1 E - W F B + P1 A T2 Feeding REEL DIMENSIONS (mm) Case Size 10.7 x 5.5 10.7 x 8.5 A ± 2.0 380 380 B ± 1.0 80.0 100.0 C ± 0.5 13.0 13.0 D ± 0.8 21.0 21.0 E ± 0.5 2.0 2.0 W 25.5 ± 0.5 25.5 ± 1.0 t 2.0 2.0 t C E A B W 2 NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com SPECIFICATIONS ARE SUBJECT TO CHANGE www.SMTmagnetics.com