RENESAS 2SC5554

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
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subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
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rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
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(http://www.renesas.com).
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or system that is used under circumstances in which human life is potentially at stake. Please contact
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contained therein.
2SC5554
Silicon NPN Epitaxial
VHF / UHF wide band amplifier
ADE-208-692 (Z)
1st. Edition
Nov. 1998
Features
• Super compact package;
(1.4 × 0.8 × 0.59mm)
• Capable low voltage operation ;
(V CE = 1V)
Outline
MFPAK
3
1
2
Note: Marking is “YH-”.
1. Emitter
2. Base
3. Collector
2SC5554
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
9
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
20
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector cutoff current
I CBO
—
—
10
µA
VCB = 15V , IE = 0
Collector cutoff current
I CEO
—
—
1
mA
VCE = 9V , RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5V , IC = 0
DC current transfer ratio
hFE
50
120
250
V
VCE = 1V , IC = 5mA
Collector output capacitance
Cob
—
0.6
0.9
pF
VCB = 1V , IE = 0
f = 1MHz
Gain bandwidth product
fT
3.5
7
—
GHz
VCE = 1V , IC = 5mA
Power gain
PG
9
12
—
dB
VCE = 1V, IC = 5mA
f = 900MHz
Noise figure
NF
—
1.4
3
dB
VCE = 1V, IC = 5mA
f = 900MHz
2
2SC5554
DC Current Transfer Ratio vs.
Collector Current
200
160
DC Current Transfer Ratio h
FE
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve
120
80
40
VCE = 1 V
100
0
0
50
100
150
200
1
Collector Output Capacitance vs.
Collector to Base Voltage
IE = 0
f = 1MHz
0.6
0.4
0.2
0
0.1
0.2
0.5
1
2
5
Collector to Base Voltage V CB (V)
10
20
50
100
Gain Bandwidth Product vs.
Collector Current
10
Gain Bandwidth Product f T (GHz)
(pF)
Collector Output Capacitance Cob
0.8
5
Collector Current I C (mA)
Ambient Temperature Ta (°C)
1.0
2
10
VCE = 1 V
8
6
4
2
0
1
2
5
10
20
50
100
Collector Current I C (mA)
3
2SC5554
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
20
5
VCE = 1 V
f = 900MHz
12
8
4
0
1
5
10
20
50
100
2
1
VCE = 1 V
16
f = 1GHz
12
8
4
0
1
2
5
10
20
50
Collector Current I C (mA)
1
2
5
10
20
50
Collector Current I C (mA)
S21 Parameter vs. Collector Current
20
S21 parameter |S 21| 2 (dB)
3
0
2
Collector Current I C (mA)
4
f = 900MHz
4
Noise Figure NF (dB)
16
Power Gain PG (dB)
VCE = 1 V
100
100
2SC5554
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 4 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–60°
–120°
–1.5
–90°
Condition : V CE = 1 V , I C = 5mA
Condition : V CE = 1 V , I C = 5mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.04 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
–2
–.6
–.8
–1
–1.5
Condition : V CE = 1 V , I C = 5mA
Condition : V CE = 1 V , I C = 5mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
5
2SC5554
Sparameter (VCE = 1V, IC = 5mA, Zo = 50Ω)
S11
f (MHz) MAG
S21
ANG
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
100
0.715
–25.4
13.06
161.3
0.0279
76.6
0.947
–16.1
200
0.647
–50.1
11.47
144.2
0.0517
65.6
0.828
–30.2
300
0.559
–71.5
9.74
131.0
0.0681
58.4
0.697
–40.4
400
0.501
–88.2
8.28
121.3
0.0798
54.6
0.587
–47.0
500
0.453
–102.5
7.08
113.7
0.0882
52.4
0.501
–51.3
600
0.416
–114.8
6.16
108.1
0.0955
51.8
0.433
–54.3
700
0.393
–125.4
5.43
103.1
0.102
51.7
0.378
–56.2
800
0.378
–134.4
4.84
99.3
0.109
52.1
0.333
–57.3
900
0.369
–142.8
4.37
95.7
0.115
52.7
0.295
–58.0
1000
0.357
–149.5
3.99
92.5
0.122
53.5
0.266
–58.4
1100
0.361
–156.6
3.66
89.7
0.128
54.2
0.240
–58.6
1200
0.358
–162.2
3.38
87.2
0.135
55.1
0.217
–58.5
1300
0.358
–167.5
3.15
84.9
0.141
56.0
0.199
–58.0
1400
0.362
–172.5
2.96
82.7
0.148
56.9
0.180
–58.0
1500
0.362
–177.3
2.78
80.9
0.155
57.2
0.166
–57.2
1600
0.369
178.8
2.64
78.6
0.163
58.1
0.151
–56.9
1700
0.373
174.7
2.50
77.2
0.169
58.8
0.137
–56.6
1800
0.377
171.1
2.38
75.1
0.177
59.2
0.126
–56.4
1900
0.388
168.3
2.28
73.3
0.183
59.6
0.113
–56.2
2000
0.395
165.3
2.18
71.8
0.191
60.1
0.102
–55.7
6
2SC5554
Package Dimensions
Unit: mm
1.4 ±0.05
+ 0.1
0.15 – 0.05
0.2
0.2
0.6 max.
+ 0.1
– 0.05
1.2 ±0.05
0.8 ±0.1
3
+ 0.1
0.2 – 0.05
0.45
0.2
1
2
+ 0.1
0.2 – 0.05
0.45
Hitachi Code
EIAJ
JEDEC
MFPAK
—
—
0.1
0.1
0.6 max.
0.9 ±0.1
7
2SC5554
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
2000 Sierra Point Parkway
Brisbane, CA 94005-1897
Tel: <1> (800) 285-1601
Fax: <1> (303) 297-0447
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
8