RENESAS 2SC5218

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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2SC5218
Silicon NPN Epitaxial
ADE-208-279A (Z)
2nd. Edition
Mar. 2001
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 9 GHz typ
• High gain, low noise figure
PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz
Outline
MPAK
3
1
2
Note:
1. Emitter
2. Base
3. Collector
Marking is “YK–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
\
2SC5218
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
9
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 12 V, IE = 0
I CEO
—
—
1
mA
VCE = 9 V, RBE =
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
50
120
250
Collector output capacitance
Cob
—
0.8
1.4
pF
VCB = 5 V, IE = 0,
f = 1 MHz
Gain bandwidth product
fT
6.0
9.0
—
GHz
VCE = 5 V, IC = 20 mA
Power gain
PG
10
13
—
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.2
2.5
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
2
VCE = 5 V, IC = 20 mA
2SC5218
DC Current Transfer Ratio vs.
Collector Current
200
160
120
100
50
0
VCE = 5V
8
6
4
2
0
1
10 20
2
5
50
Collector Current I C (mA)
100
80
40
0
0.1
50
100
150
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
10
Gain Bandwidth Product f T (GHz)
DC Current Transfer Ratio h FE
150
Collector Output Capacitance Cob (pF)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
2.0
1.6
VCE = 5 V
Pulse Test
1
10
Collector Current I C (mA)
100
Collector Output Capacitance vs.
Collector to Base Voltage
IE = 0
f = 1 MHz
1.2
0.8
0.4
0
0.5
1
2
5
10 20
50
Collector to Base Voltage V CB (V)
3
2SC5218
Power Gain vs. Collector Current
20
Noise Figure vs. Collector Current
5
VCE = 5V
f = 900 MHz
16
Noise Figure NF (dB)
Power Gain PG (dB)
VCE = 5V
f = 900 MHz
12
8
4
0
4
3
2
1
0
1
2
5
10 20
50
Collector Current I C (mA)
1
2
5
10 20
50
Collector Current I C (mA)
S21 Parameter vs. Collector Current
20
S 21 Parameter |S 21 | (dB)
100
VCE = 5V
f = 1 GHz
16
12
8
4
0
1
4
2
5
10 20
50
Collector Current I C (mA)
100
100
2SC5218
S11 Parameter vs. Frequency
.8
1
.6
S21 Parameter vs. Frequency
90°
1.5
Scale: 6 / div.
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2 .4
0
.6 .8 1.0 1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–.4
–30°
–150°
–3
–2
–.6
–.8
–1
–90°
Condition: V CE = 5 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
(I C = 5 mA)
(I C = 20 mA)
Condition: V CE = 5 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
(I C = 5 mA)
(I C = 20 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.04 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V CE = 5 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
(I C = 5 mA)
(I C = 20 mA)
–2
–.6
–.8
–1
–1.5
Condition: V CE = 5 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
(I C = 5 mA)
(I C = 20 mA)
5
2SC5218
S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.817
–34.7
14.1
156
0.034
72.3
0.916
–19.8
200
0.701
–64.5
11.6
136
0.058
59.8
0.761
–34.8
300
0.602
–88.3
9.32
122
0.073
52.9
0.620
–43.9
400
0.536
–106
7.61
112
0.083
49.8
0.520
–49.3
500
0.495
–120
6.40
105
0.091
48.9
0.447
–52.5
600
0.468
–132
5.50
99.5
0.097
49.3
0.396
–54.5
700
0.447
–141
4.80
94.9
0.104
50.0
0.357
–55.7
800
0.434
–150
4.27
90.9
0.110
50.9
0.327
–56.5
900
0.423
–157
3.83
87.2
0.117
52.1
0.305
–57.5
1000
0.428
–164
3.50
83.9
0.124
53.3
0.287
–58.4
S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω)
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.529
–70.4
29.9
136
0.025
64.9
0.716
–39.8
200
0.427
–111
19.0
115
0.038
60.3
0.462
–56.6
300
0.386
–134
13.4
104
0.048
61.8
0.330
–63.2
400
0.370
–150
10.2
98.0
0.058
64.3
0.260
–66.2
500
0.366
–159
8.28
93.7
0.069
66.6
0.214
–67.8
600
0.367
–167
6.96
89.7
0.080
67.8
0.184
–68.8
700
0.364
–174
6.01
87.0
0.091
68.7
0.162
–69.1
800
0.360
–179
5.28
84.2
0.102
69.5
0.146
–69.7
900
0.362
176
4.71
81.7
0.115
69.4
0.133
–70.4
1000
0.364
171
4.27
79.3
0.126
69.6
0.123
–71.5
6
S21
S12
S22
2SC5218
Package Dimensions
As of January, 2001
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
MPAK
—
Conforms
0.011 g
7
2SC5218
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Japan
:
:
:
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
8