PHOTODIODE 42mm2 ODD-42W FEATURES • TO-8 hermetic package • Optimized die size for maximum signal • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time Series Resistance THERMAL PARAMETERS TEST CONDITIONS 9.91mm x 4.28mm @ 632nm VR = 10V IR = 10A VR = 10V VR = 10V Vf = 1V Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature1 1 MIN 0.35 25 TYP 42 0.40 11 60 85 30 35 MAX 25 100 UNITS mm2 A/W nA Volts pF nsec Ohms -55°C TO 100°C 100°C 260° 1/16" from case for 10 seconds. 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 PHOTODIODE 42mm2 ODD-42W CAPACITANCE vs BIAS VOLTAGE 1 RELATIVE CAPACITANCE 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.7 2 4 6 12 14 8 10 BIAS VOLTAGE (V) 16 18 20 TYPICAL SPECTRAL RESPONSE 0.6 RESPONSIVITY 0.5 0.4 0.3 0.2 0.1 0 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) RELATIVE DARK CURRENT (ld) 3.0 DARK CURRENT VS VOLTAGE 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE (Vr) 50 55 60 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013