PHOTODIODE 42mm2 ODD-42W

PHOTODIODE 42mm2
ODD-42W
FEATURES
• TO-8 hermetic package
• Optimized die size for maximum signal
• Low capacitance
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
Responsivity, R
Dark Current, Idr
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
Series Resistance
THERMAL PARAMETERS
TEST CONDITIONS
9.91mm x 4.28mm
@ 632nm
VR = 10V
IR = 10A
VR = 10V
VR = 10V
Vf = 1V
Storage and Operating Temperature Range
Maximum Junction Temperature
Lead Soldering Temperature1
1
MIN
0.35
25
TYP
42
0.40
11
60
85
30
35
MAX
25
100
UNITS
mm2
A/W
nA
Volts
pF
nsec
Ohms
-55°C TO 100°C
100°C
260°
1/16" from case for 10 seconds.
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
PHOTODIODE 42mm2
ODD-42W
CAPACITANCE vs BIAS VOLTAGE
1
RELATIVE CAPACITANCE
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.7
2
4
6
12
14
8
10
BIAS VOLTAGE (V)
16
18
20
TYPICAL SPECTRAL RESPONSE
0.6
RESPONSIVITY
0.5
0.4
0.3
0.2
0.1
0
300
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
RELATIVE DARK CURRENT (ld)
3.0
DARK CURRENT VS VOLTAGE
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20 25 30 35 40 45
REVERSE VOLTAGE (Vr)
50
55
60
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013