PHOTODIODE 1mm2 ODD-1B FEATURES • • • • TO-18 package Low cost format Low dark current Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time Series Resistance THERMAL PARAMETERS TEST CONDITIONS 1.35mm x 0.76mm @ 450nm VR = 10V IR = 10A VR = 10V VR = 10V Vf = 1V Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature1 1 MIN 0.20 25 TYP 1 0.28 0.2 60 0.5 8 25 MAX 1 2 15 60 UNITS mm2 A/W nA Volts pF nsec Ohms -55°C TO 100°C 100°C 260° 1/16" from case for 10 seconds. 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 PHOTODIODE 1mm2 ODD-1B CAPACITANCE vs BIAS VOLTAGE 1 RELATIVE CAPACITANCE 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.7 2 4 6 12 14 8 10 BIAS VOLTAGE (V) 16 18 20 TYPICAL SPECTRAL RESPONSE 0.6 RESPONSIVITY 0.5 0.4 0.3 0.2 0.1 0 200 300 400 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) RELATIVE DARK CURRENT (ld) 3.0 DARK CURRENT VS VOLTAGE 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE (Vr) 50 55 60 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013