NCE25GD120P

Pb Free Product
NCE25GD120P
http://www.ncepower.com
NCE25GD120P
1200V, 25A, Trench NPT IGBT
Features
z
z
z
z
Trench NPT( Non Punch Through) IGBT
High speed switching
Low saturation voltage: VCE(sat)=2.0V@IC=25A
High input impedance
Applications
z
z
Inductive heating, Microwave oven, Inverter, UPS, etc.
Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.
Absolute Maximum Ratings
Symbol Description
Ratings
Units
VCES
Collector to Emitter Voltage
1200
V
VGES
Gate to Emitter Voltage
+/-30
V
IC
ICM(1)
Continuous Collector Current
@TC=25°C
50
A
Continuous Collector Current
@TC=100°C
25
A
90
A
Pulsed Collector Current
IF
Diode Continuous Forward
IFM
Diode Maximum Forward
PD
Current
@TC=100°C
Current
25
150
A
Maximum Power Dissipation
@TC=25°C
312
W
Maximum Power Dissipation
@TC=100°C
125
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering Purposes, 1/8" from
case for 5seconds
300
°C
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
Wuxi NCE Power Semiconductor Co., Ltd
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Thermal Characteristics
Symbol Parameter
R
JC
RJA
Typ.
Max.
Units
Thermal Resistance, Junction to Case
-
0.4
°C/W
Thermal Resistance, Junction to Ambient
-
40
°C/W
Electrical Characteristics of the IGBT TC=25°C
Symbol Parameter
Off Characteristics
BVCES
Collector to Emitter
Breakdown Voltage
Test Conditions
Min.
Typ. Max.
Units
VGE=0V, Ic=1mA
1200
-
-
V
ICES
Collector Cut-Off Current
VCE=VCES, VGE=0V
-
-
1
mA
IGES
G-E Leakage Current
VGE=VGES, VCE=0V
-
-
+/-250
nA
IC=25mA, VCE=VGE
4.0
5.5
7.0
V
IC=25A, VGE=15V
TC=25°C
-
2
2.5
V
IC=25A, VGE=15V
TC=125°C
-
2.15
-
V
-
3700
-
pF
-
130
-
pF
-
80
-
pF
-
50
-
ns
-
60
90
ns
-
190
-
ns
-
100
180
ns
-
4.1
6.2
mJ
-
0.96
1.5
mJ
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation
Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer
Capacitance
VCE=30V, VGE=0V,
f=1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VCC=600V,IC=25A,
RG=10Ώ,VGE=15V,
Inductive Load,
TC=25°C
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
-
5.06
7.7
mJ
td(on)
Turn-On Delay Time
-
50
-
ns
-
60
-
ns
-
200
-
ns
-
154
-
ns
-
4.3
6.9
mJ
-
1.5
2.4
mJ
-
5.8
9.3
mJ
-
200
300
nC
-
15
23
nC
-
100
150
nC
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
Wuxi NCE Power Semiconductor Co., Ltd
VCC=600V,IC=25A,
RG=10Ώ,VGE=15V,
Inductive Load,
TC=125°C
VCC=600V,IC=25A,
VGE=15V
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Electrical Characteristics of Diode TC=25°C
Symbol Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery
Time
Irr
Diode Peak Reverse
Recovery Current
Qrr
Diode Reverse Recovery
Charge
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Test Conditions
TC=25°C
IF=25A
IF=25A,
dI/dt=200A/us
Min. Typ. Max.
-
2.0
TC=125°C
-
2.1
TC=25°C
-
235
TC=125°C
-
300
TC=25°C
-
27
TC=125°C
-
31
TC=25°C
-
3130
TC=125°C
-
4650
Page 3
3.0
Units
V
V
350
ns
ns
40
A
A
4700
uC
uC
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Typical Performance Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
Collector Current, IC(A)
Collector Current IC, (A)
Figure 1. Typical Output Characteristics
Collector Emitter Voltage, VCE(V)
Figure 4. Saturation Voltage vs. VGE
Collector Emitter Voltage, Vce(V)
Collector Emitter Voltage, Vce(V)
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector Emitter Voltage, VCE(V)
Case temperature, Tc(°C)
Figure 6. Saturation Voltage vs. VGE
Collector Emitter Voltage, Vce(V)
Collector Emitter Voltage, Vce(V)
Figure 5. Saturation Voltage vs. VGE
Gate Emitter Voltage, VGE( V)
Gate Emitter Voltage, VGE( V)
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Gate Emitter Voltage, VGE( V)
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Typical Performance Characteristics (Continued)
Figure 8. Turn-on Characteristics vs. Gate
Resistance
Capacitance (pF)
Switching Time (ns)
Figure 7. Capacitance Characteristics
Gate Resistance, RG (Ω)
Collector Emitter Voltage, VCE(V)
Figure 10. Switching Loss vs. Gate Resistance
Switching Time (ns)
Switching Loss (mJ)
Figure 9. Turn-off Characteristics vs. Gate
Resistance
Gate Resistance, RG (Ω)
Gate Resistance, RG (Ω)
Switching Loss (mJ)
Figure 12. Turn-Off Characteristics vs.
Collector Current
Switching Loss (mJ)
Figure 11. Turn-on Characteristics vs. Collector
Current
Collector Current, IC (A)
Collector Current, IC (A)
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Typical Performance Characteristics (Continued)
Figure14. Gate Charge Characteristics
Switching Loss (mJ)
Gate-Emitter Voltage (V)
Figure 13. Switching Loss vs. Collector Current
Collector Current, IC (A)
Collector Current, IC(A)
Figure 16. Turn-Off SOA
Collector Current, IC(A)
Figure 15. SOA Characteristics
Gate Charge, Qg (nC)
Collector Emitter Voltage, (V)
Collector Emitter Voltage, (V)
Figure 17. Transient Thermal Impedance of IGBT
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TO-3P Mechanical Dimensions
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NCE25GD120P
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ATTENTION:
■
Any and all NCE products described or contained herein do not have specifications that can handle applications that
require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose
failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE representative nearest you before using any NCE products described or contained herein in such
applications.
■ NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even
momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all NCE products described or contained herein.
■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To
verify symptoms and states that cannot be evaluated in an independent device, the customer should
always evaluate and test devices mounted in the customer’s products or equipment.
■ NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or
that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of
accidents or events cannot occur. Such measures include but are not limited to protective circuits and error
prevention circuits for safe design, redundant design, and structural design.
■ In the event that any or all NCE products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,
including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of NCE Power Semiconductor CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice
due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
NCE product that you intend to use.
■ This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without
notice.
Wuxi NCE Power Semiconductor Co., Ltd
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