NCE N-Channel Enhancement Mode Power MOSFET

Pb Free Product
NCE1507IA
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
D
Description
The NCE1507IA uses advanced trench technology and
G
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
S
General Features
Schematic diagram
● VDS = 150V,ID = 7A
RDS(ON) < 290mΩ @ VGS=10V (Typ:255mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
Marking and pin assignment
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE1507IA
NCE1507IA
TO-251
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
150
V
Gate-Source Voltage
VGS
±20
V
ID
7
A
IDM
50
A
PD
30
W
TJ,TSTG
-55 To 175
℃
RθJC
5
℃/W
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
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Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
150
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=150V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.5
2
2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5A
-
255
290
mΩ
gFS
VDS=15V,ID=1.5A
-
3
-
S
-
235
-
PF
-
36
-
PF
-
20
-
PF
-
8
-
nS
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=25V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=75V,ID=1A,RL=75Ω
-
10
-
nS
td(off)
VGS=10V,RG=6Ω
-
20
-
nS
-
15
-
nS
-
8
-
1.4
-
nC
-
2.1
-
nC
-
-
1.2
V
-
-
7
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=75V,ID=1.5A,
VGS=10V
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Wuxi NCE Power Semiconductor Co., Ltd
VSD
IS
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VGS=0V,IS=2A
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NCE1507IA
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to product
Test Circuit
1) EAS Test Circuit
2)Gate Charge Test Circuit
3)Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson- Junction Temperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Rdson On-Resistance(Ω)
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Wuxi NCE Power Semiconductor Co., Ltd
Figure 6 Source- Drain Diode Forward
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C Capacitance (pF)
Normalized BVdss
Pb-Free Product
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
Vth (V) Variance
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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Pb-Free Product
TO-251 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
2.200
2.400
0.087
0.094
A1
1.050
1.350
0.042
0.054
B
1.350
1.650
0.053
0.065
b
0.500
0.700
0.020
0.028
b1
0.700
0.900
0.028
0.035
c
0.430
0.580
0.017
0.023
c1
0.430
0.580
0.017
0.023
D
6.350
6.650
0.250
0.262
D1
5.200
5.400
0.205
0.213
E
5.400
5.700
0.213
0.224
e
2.300 TYP
0.091 TYP
e1
4.500
4.700
0.177
0.185
L
7.500
7.900
0.295
0.311
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Wuxi NCE Power Semiconductor Co., Ltd
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Pb-Free Product
Attention
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
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of NCE power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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