NCE N-Channel Enhancement Mode Power MOSFET

Pb Free Product
NCEP85T16
http://www.ncepower.com
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP85T16 uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
● VDS =85V,ID =160A
RDS(ON) <3.8mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Marking and pin assignment
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP85T16
NCEP85T16
TO-220-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
85
V
Gate-Source Voltage
VGS
±20
V
ID
160
A
ID (100℃)
112
A
Pulsed Drain Current
IDM
480
A
Maximum Power Dissipation
PD
220
W
1.5
W/℃
EAS
1440
mJ
TJ,TSTG
-55 To 175
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
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Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.6
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
85
Zero Gate Voltage Drain Current
IDSS
VDS=85V,VGS=0V
-
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2.5
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=80A
-
gFS
VDS=10V,ID=80A
Typ
Max
Unit
-
V
-
1
μA
-
±100
nA
4.5
V
3.1
3.8
mΩ
75
-
-
S
-
8500
-
PF
-
1520
-
PF
-
81
-
PF
-
30.5
-
nS
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=40V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=40V,ID=80A
-
29
-
nS
td(off)
VGS=10V,RG=4.7Ω
-
95
-
nS
-
34.5
-
nS
-
105
nC
-
39
nC
-
28
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=40V,ID=80A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=160A
IS
trr
TJ = 25°C, IF = IS
Qrr
di/dt = 100A/μs
(Note3)
-
1.2
V
160
A
-
-
-
95
nS
-
225
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=42.5V,VG=10V,L=0.5mH,Rg=25Ω
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NCEP85T16
Test Circuit
1) EAS test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
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NCEP85T16
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ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Wuxi NCE Power Semiconductor Co., Ltd
Figure 6 Source- Drain Diode Forward
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NCEP85T16
C Capacitance (pF)
Normalized BVDSS
http://www.ncepower.com
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
TJ-Junction Temperature(℃)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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TO-220-3L Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
4.400
4.600
0.173
0.181
A1
2.250
2.550
0.089
0.100
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
9.910
10.250
0.390
0.404
E
8.9500
9.750
0.352
0.384
E1
12.650
12.950
0.498
0.510
e
2.540 TYP.
0.100 TYP.
e1
4.980
5.180
0.196
0.204
F
2.650
2.950
0.104
0.116
H
7.900
8.100
0.311
0.319
h
0.000
0.300
0.000
0.012
L
12.900
13.400
0.508
0.528
L1
2.850
3.250
0.112
0.128
V
Φ
7.500 REF.
3.400
Wuxi NCE Power Semiconductor Co., Ltd
0.295 REF.
3.800
Page 6
0.134
0.150
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NCEP85T16
Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE power products(including technical data, services) described or contained herein are
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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