RF Transistor, 8V, 150mA, fT=16GHz NPN Dual MCPH6

Ordering number : ENA1601A
MCH6001
RF Transistor
8V, 150mA, fT=16GHz NPN Dual MCPH6
http://onsemi.com
Features
•
•
•
•
Low-noise use : NF=1.2dB typ (f=1GHz)
High cut-off frequency : fT=16GHz typ (VCE=5V)
High gain : |S21e|2=16dB typ (f=1GHz)
Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
PC
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
PT
Tj
Storage Temperature
Tstg
Unit
15
V
8
V
2
V
150
mA
When mounted on glass epoxy substrate 1unit
400
mW
When mounted on glass epoxy substrate
600
mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7022A-019
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
Packing Type : TL
2
TL
3
0.65
GT
LOT No.
0 to 0.02
1
Marking
4
LOT No.
0.25
MCH6001-TL-E
0.15
2.1
1.6
0.25
2.0
0.3
0.07
0.85
Electrical Connection
1
2
3
1 : Base1
2 : Emitter1
3 : Collector2
4 : Base2
5 : Emitter2
6 : Collector1
6
5
4
MCPH6
Semiconductor Components Industries, LLC, 2013
August, 2013
C1
E2
B2
B1
E1
C2
92612 TKIM/N1809AB TKIM TC-00002075 No. A1601-1/6
MCH6001
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
VCB=5V, IE=0A
VEB=1V, IC=0A
Gain-Bandwidth Product
hFE
fT
VCE=5V, IC=50mA
VCE=5V, IC=50mA
Forward Transfer Gain
|S21e|
Noise Figure
NF
Emitter Cutoff Current
DC Current Gain
Ratings
Conditions
2
min
typ
Unit
max
60
1.0
μA
1.0
μA
150
13
16
VCE=5V, IC=50mA, f=1GHz
16
VCE=1V, IC=10mA, f=1GHz
1.2
GHz
dB
1.8
dB
Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Ordering Information
Device
MCH6001-TL-E
Shipping
memo
MCPH6
3,000pcs./reel
Pb Free
IC -- VCE
140
IC -- VBE
150
100
0.9mA
80
0.6mA
60
40
0.3mA
120
90
5V
1.2mA
VCE=1V
Collector Current, IC -- mA
1.5mA
120
Collector Current, IC -- mA
Package
60
30
20
0
IB=0mA
0
2
4
6
Collector-to-Emitter Voltage, VCE -- V
8
IT13901
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT13902
No. A1601-2/6
MCH6001
hFE -- IC
VCE=5V
100
1V
7
5
3
2
1.0
2
3
5
7
2
10
3
5
7 100
2
Collector Current, IC -- mA
f=1MHz
7
5
3
2
0.1
3
2
3
5
7
2
1.0
3
5
Collector-to-Base Voltage, VCB -- V
|S21e|2 -- I
IT13903
Cob -- VCB
3
Cre -- VCB
1.0
Reverse Transfer Capacitance, Cre -- pF
DC Current Gain, hFE
2
7
10
IT13904
C
20
Forward Transfer Gain, |S21e|2 -- dB
Output Capacitance, Cob -- pF
f=1MHz
2
1.0
7
5
3
0.1
2
3
5
7
2
1.0
3
5
Collector-to-Base Voltage, VCB -- V
10
5
0
1.0
7
10
IT13905
4
7
3
5
7
2
10
3
5
7 100
2
IT15151
NF -- IC
f=1GHz
5
3
Noise Figure, NF -- dB
Gain-Bandwidth Product, fT -- GHz
2
Collector Current, IC -- mA
fT -- IC
100
15
2
10
7
5
3
3
2
VC
E=1V
1
5V
2
1.0
1.0
2
3
5
7
2
10
3
5
Collector Current, IC -- mA
PT, PC -- Ta
700
7 100
2
IT15152
0
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT13908
Collector Dissipation, PT, PC -- mW
When mounted on glass epoxy substrate
600
500
P
TT
ot
400
al
di
ss
ip
P
ati
C1
un
on
it
300
200
100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15153
No. A1601-3/6
MCH6001
Embossed Taping Specification
MCH6001-TL-E
No. A1601-4/6
MCH6001
Outline Drawing
MCH6001-TL-E
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No. A1601-5/6
MCH6001
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PS No. A1601-6/6