TND027SW Excellent Power Device Lowside

Ordering number : EN7437D
TND027SW
Excellent Power Device
http://onsemi.com
Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving, Dual SOIC8
Features
• Halogen free compliance
N-channel MOSFET built in
Overheat protection (Self recovery type)
Overcurrent protection (Self recovery type current limiting function)
Overvoltage protection
Incorporates two sets of circuit
•
•
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Output Current
VDS
IO(DC)
Input Voltage
VIN
Allowable Power Dissipation
PD
Operating Supply Voltage
Operating Temperature
VDS(opr)
Topr
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
Ratings
Unit
60
V
1.5
A
--0.3 to +10
V
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
1.3
W
When mounted on ceramic substrate (1200mm2×0.8mm)
1.7
W
40
V
--40 to +85
°C
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7072-003
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
4.9
0.22
5
4
0.445
0.254 (GAGE PLANE)
0.175
1.55
1.375
1.27
0.715
0.375
1
TND027SW-TL-2H
Packing Type: TL
3.9
6.0
8
1 : GND1
2 : IN1
3 : GND2
4 : IN2
5 : OUT2
6 : OUT2
7 : OUT1
8 : OUT1
Marking
TND
027
TL
LOT No.
Block Diagram
OUT(D)
Overcurrent
protective
circuit
SOIC8
IN
ESD
protective
circuit
Output current
control
Overvoltage
protective circuit
Gate
shutdown
circuit
Overheat
protective
circuit
GND(S)
Semiconductor Components Industries, LLC, 2013
August, 2013
D0512 TKIM TC-00002832/O2611 TKIM/D2607IP TIIM TC-00001114/ No.7437-1/9
O2203 TSIM/51503 TSIM TA-100479
TND027SW
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Clamp Voltage
VDS, clamp
IDSS1
Ratings
Conditions
min.
typ.
VIN=0V, IO=1mA
VIN=0V, VDS=50V
VIN=0V, VDS=12V
60
VIN(th)
VIN(opr)
VDS=5V, IO=1mA
1.0
Input Current (Output On)
RDS(on)
IIN
VIN=5V, IO=1A
VIN=5V
Over-Heat Detecting Temperature
Tj(sd)
Over-Current Detecting Current
Is
VIN=5V, IO=1A
VIN=5V
Over-Current Limit (Peak)
ILMT
VIN, clamp
VIN=5V
IIN=1mA
Output-OFF Current
IDSS2
Input Threshold Voltage
Protection Circuit Operating Input Voltage
Drain-to-Source ON Resistance
Input Clamp Voltage
Unit
max.
V
1.5
10
μA
5
μA
2.0
4
V
10
V
0.3
0.4
Ω
0.6
mA
120
150
190
°C
3.0
6.0
9.0
A
3.0
6.0
9.0
A
10
V
Notes : 1. Overcurrent protection circuit limits the output current to the range of overcurrent limit value.
2. During overheat protecting operation, output current is turned off.
Ordering Information
Devices
TND027SW-TL-2H
Shipping
memo
SOIC8
2,500pcs./reel
Pb Free and Halogen Free
RDS(on) -- Ta
0.5
IO=1A
0.8
Drain-to-Source
ON Resistance, RDS(on) -- Ω
5V
4V
0.3
6V
0.2
0.1
0
--50
RDS(on) -- VIN
1.0
IO=1A
0.4
Drain-to-Source
ON Resistance, RDS(on) -- Ω
Package
0.6
0.4
Ta=85°C
0.2
25°C
--40°C
0
--25
0
25
50
75
Ambient Temperature, Ta -- °C
0
100
4
6
8
10
Input Voltage, VIN -- V
IIN -- Ta
0.12
2
IT05233
IIN -- VIN
1.4
Ta=25°C
VIN=5V
1.2
Input Current, IIN -- mA
0.10
Input Current, IIN -- mA
12
IT05234
0.08
0.06
0.04
0.02
1.0
l)
ma
or
abn
0.8
(
I IN
0.6
0.4
0.2
IIN(normal)
0
--50
0
--25
0
25
50
Ambient Temperature, Ta -- °C
75
100
IT05235
0
2
4
6
Input Voltage, VIN -- V
8
10
IT05236
No.7437-2/9
TND027SW
IS -- Ta
9
IS -- VIN
9
Overcurrent Detecting Current, IS -- A
Overcurrent Detecting Current, IS -- A
Ta=25°C
8
7
6V
5V
6
4V
5
4
3
--50
8
7
6
5
4
3
--25
0
25
50
75
Ambient Temperature, Ta -- °C
4
100
6
7
8
9
Input Voltage, VIN -- V
ILMT -- Ta
9
5
IT05237
10
IT05238
ILMT -- VIN
12
8
Overcurrent Limit, ILMT -- A
6V
5V
7
4V
6
5
4
0
25
50
75
4
2
100
4
VIN=0V
IO=1mA
68
66
64
62
60
58
--25
0
25
50
75
7
8
9
IIN=1mA
12
11
10
9
8
--50
100
--25
0
25
50
75
Ambient Temperature, Ta -- °C
IT05241
100
IT05242
IO -- VIN
2.0
VDS=5V
IO=1mA
10
IT05240
VIN, clamp -- Ta
13
VIN(th) -- Ta
2.0
6
Input Voltage, VIN -- V
VDS, clamp -- Ta
70
5
VDS=24V
1.8
1.8
1.4
1.2
1.4
25°C
1.6
1.2
1.0
0.8
--40°
C
Output Current, IO -- A
1.6
5°C
Drain-to-Source Clamp Voltage, VDS, Clamp -- V
6
IT05239
Ambient Temperature, Ta -- °C
Threshold Voltage, VIN(th) -- V
8
0
--25
Ambient Temperature, Ta -- °C
56
--50
10
Ta=
8
3
--50
Input Clamp Voltage, VIN, Clamp -- V
Overcurrent Limit, ILMT -- A
Ta=25°C
0.6
0.4
1.0
0.2
0.8
--50
0
--25
0
25
50
Ambient Temperature, Ta -- °C
75
100
IT05243
1
2
Input Voltage, VIN -- V
3
IT05244
No.7437-3/9
Tj(sd) -- VIN
160
158
156
154
152
150
148
146
144
142
140
4.0
4.5
5.0
5.5
6.0
Allowable Power Dissipation, PD(Circuit2) -- W
Input Voltage, VIN -- V
IT05245
PD(Circuit2) -- PD(Circuit1)
1.4
When mounted on ceramic substrate
(1200mm2×0.8mm)
1.3
Allowable Power Dissipation, PD -- W
Overheat Detecting Temperature, Tj(sd) -- °C
TND027SW
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.5
1.0
1.3
Allowable Power Dissipation, PD(Circuit1) -- W
1.8
1.7
1.6
1.4
1.3
1.2
Total Dissipation
1unit
1.0
0.8
0.6
0.4
0.2
0
--40
1.5
PD -- Ta
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
IT05247
IT05248
Sample Application Circuit
AC24V
AC100V
Lamp
Lamp
OUT
IN
TND027SW
5V 5V
Microcontroller
Microcontroller
OUT 1
IN 1
GND
Lamp
TND027SW
OUT 2
IN 2
5V
Microcontroller
GND 1, 2
Another Sample Application Circuit (Solenoid drive)
AC24V
AC100V
Solenoid
Solenoid
TND027SW
GND
OUT 2
OUT 1
OUT
IN
5V 5V MicroMicrocontroller
controller
IN 1
TND027SW
IN 2
5V
Microcontroller
GND 1, 2
No.7437-4/9
TND027SW
Operation Description
• The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V
is recommended), and then the lamp will be turned on by the current flowing to the lamp. Conversely, the output
power MOSFET will be turned off when the input voltage goes below the input threshold voltage, and the lamp
will be turned off.
• The inrush current that occurs during normal lamp operation is limited to a preset value by the built-in overcurrent
protecting circuit, which makes the lamp life longer.
• The internal overcurrent protection function limits the current of output power MOSFET when output current of at
least the overcurrent detecting current value flows at load short. Besides, if the device temperature exceeds the
allowable power dissipation, overheat protection function protects the power switch from being broken down by
turning off the current of output power MOSFET when Tj comes to 150°C (typical).
• As an example of application circuit, DC voltage can also be controlled as a solenoid drive.
Addition
• The diode between OUT and GND in the block diagram is parasitic diode of the MOSFET.
• Not apply a voltage on IN terminal during the period when OUT voltage is lower then GND voltage when driving
a solenoid or a motor.
• Be sure connect a diode between OUT terminal and GND terminal when you want to apply a voltage on IN terminal
under the above-stated state (that is, OUT Voltage < GND Voltage).
No.7437-5/9
TND027SW
Taping Specification
TND027SW-TL-2H
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No.7437-7/9
TND027SW
Outline Drawing
TND027SW-TL-2H
Land Pattern Example
Mass (g) Unit
0.082 mm
* For reference
Unit: mm
5.60
1.75
0.65
1.27
No.7437-8/9
TND027SW
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PS No.7437-9/9