TIG067SS Ordering number : ENA1067 SANYO Semiconductors DATA SHEET TIG067SS N-Channel IGBT Light-Controlling Flash Applications Features • • • Low-saturation voltage Enhansment type High speed switching • • • 4.0V drive Built-in Gate-to-Emitter protection diode Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Emitter Voltage (DC) Collector-to-Emitter Voltage (Pulse) Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) VCES VCESP VGES VGESP Conditions Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 400 V PW≤1ms 450 V ±6 V PW≤1ms ±8 V CM=600μF ICP dv / dt Maximum Collector-to-Emitter dv / dt Ratings VCE≤320V, starting Tch=25°C When mounted on FR4 substrate (11,680mm2×1.6mm) 150 A 1500 V / μs 1.2 W 150 °C -40 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7072-002 • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2500 pcs./reel TIG067SS-TL-2W 4.9 5 1 0.715 0.375 3.9 6.0 8 0.22 4 0.445 0.254 (GAGE PLANE) 0.175 1.55 1.375 1.27 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector Packing Type: TL Marking TIG 067 TL LOT No. Electrical Connection 5 to 8 SANYO : SOIC8 4 1 to 3 http://www.sanyosemi.com/en/network/ O0312PJ TKIM TC-00002673 No. A1067-1/9 TIG067SS Electrical Characteristics at Ta=25°C Parameter Symbol Collector-to-Emitter Breakdown Voltage V(BR)CES ICES IGES IC=2mA, VGE=0V VCE=320V, VGE=0V VCE=10V, IC=1mA Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Fall Time tf Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Ratings Conditions min typ Unit max 400 V VGE=±6V, VCE=0V 0.4 IC=150A, VGE=4V 3.8 VCE=10V, f=1MHz IC=150A, VCC=320V, Resistor load VGE=4V, RG=36Ω 10 μA ±10 μA 1.0 V 5 V 5100 pF 59 pF 43 pF 270 ns Fig1 Large Current R Load Switching Circuit RL CM + VCC RG TIG067SS 4V 0V 100kΩ Note1. Gate Series Resistance RG ≥ 36Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt ≤ 1500 / μs is satisfied at customer’s actual set evaluation, RG < 36Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 1500V / μs to protect the device when it is turned off. Ordering Information Device TIG067SS-TL-2W Package Shipping memo SOIC8 2,500pcs./reel Pb Free and Halogen Free No. A1067-2/9 TIG067SS Tc = Collector Current, IC -- A 125 100 75 50 25 0 1 2 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V 75 50 8 7 6 5 IC=150A 130A 3 100A 2 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Tc=25°C 9 8 7 6 5 IC=150A 4 130A 3 100A 2 1 1.0 5.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V 5.0 IT15737 VCE(sat) -- Tc 6 Tc= 75°C 5.0 IT15735 VCE -- VGE IT15736 VCE -- VGE 10 0.5 10 Tc= --25°C 4 0 Gate-to-Emitter Voltage, VGE -- V VGE=4V 9 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V 100 0 10 9 1 1.0 Collector-to-Emitter Voltage, VCE -- V °C 25 °C 75 125 IT15734 VCE -- VGE 10 8 7 6 5 IC=150A 130A 4 3 100A 5 0A I C=15 130A 4 100A 3 2 2 1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V VCE=10V IC=1mA 0.8 --25 0 25 50 100 75 125 Case Temperature, Tc -- °C IT15738 VGE(off) -- Tc 0.9 1 --50 5.0 150 IT15739 Cies, Coes, Cres -- VCE 10000 7 5 f=1MHz Cies 3 0.7 Cies, Coes, Cres -- pF Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 150 25 Collector-to-Emitter Voltage, VCE -- V 0 5° C 3. 0V 4.0 V .0 V 150 VCE=5V 175 2.5V VG E=5 Collector Current, IC -- A 175 IC -- VGE 200 Tc=25°C --2 IC -- VCE 200 0.6 0.5 0.4 0.3 0.2 2 1000 7 5 3 2 100 7 5 Coes Cres 3 0.1 0 --50 2 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT15540 10 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE -- V 18 20 IT15741 No. A1067-3/9 TIG067SS SW Time -- ICP Switching test circuit Fig.1 VGE=4V VCC=320V td (off) RG=36Ω Switching Time, SW Time -- ns 2 1000 7 5 tf 3 2 tr 100 7 td(on) 5 3 3 5 7 2 100 dv / dt -- RG 3000 5 3 tr 2 ) t d(on 100 7 5 2000 1500 1000 500 0 0 10 20 30 40 50 60 70 80 Gate Series Resistance, RG -- Ω CM -- ICP 800 90 200 100 100 120 IT15924 Tc≤70°C CM=600μF 140 120 100 80 60 40 20 1 2 3 4 5 6 7 8 Gate-to-Emitter Voltage, VGE -- V dv / dt -- Turn OFF IC 2000 9 IT15746 Tc≤70°C VCE=320V 1750 dv / dt, dv / dt -- V / μs 300 80 160 IT15745 400 60 ICP -- VGE 0 0 100 Tc=70°C 500 40 180 Tc=25°C 600 20 Gate Series Resistance, RG -- Ω VGE=4V VCE=320V 700 0 IT15923 Switching test circuit Fig.1 VGE=4V VCC=320V ICP=150A 2500 Turn OFF dv / dt -- V / μs 7 2 3 Collector Current (Pulse), ICP -- A 2 Collector Current (Pulse), ICP -- A Maximum Capacitor, CM -- μF 1000 3 10 10 1500 1250 1000 750 500 250 0 20 40 60 80 100 120 140 Collector Current (Pulse), ICP -- A 160 180 IT15747 PD -- Ta 1.4 Allowable Power Dissipation, PD -- W Switching test circuit Fig.1 VGE=4V VCC=320V f) t d(of ICP=150A CM=600μF PW=50μS tf 2 2 0 SW Time -- RG 3 Switching Time, SW Time -- ns 3 0 0 20 40 60 80 100 120 140 Turn OFF Collector Current, Turn OFF IC -- A 160 180 IT15748 When mounted on FR4 substrate (11,680mm2✕1.6mm) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16955 No. A1067-4/9 TIG067SS Definition of dv/dt dv/dt is defined as the maximum slope of the below VCE curve during turn-off period. dv/dt=ΔVCE/Δt=ΔVCE/100ns Overall waveform Enlarged picture of turn-off period Turn-off period V,I VCE Turn off VCE Δt=100ns ICP ΔVCE Turn off IC IC t VCE Definition of Switching Time VGE VGE:90% VGE:10% t VCE VCE:90% VCE:10% VCE:10% t IC td(on) tr td(off) IC:90% IC:10% t tf No. A1067-5/9 TIG067SS Taping Specification TIG067SS-TL-2W 3DFNLQJ )RUPDW &DUULHU 7DSH % 3DFNLQJ PHWKRG FRQWDLQHG SFV 5HHO ,QQHU ER[ 2XWHU ER[ ,QQHU %2; : 2XWHU %2; : UHHOV FRQWDLQHG LQQHU ER[HV FRQWDLQHG 'LPHQVLRQV PPH[WHUQDO 'LPHQVLRQV PPH[WHUQDO 2XWHU ER[ ODEHO 5HHO ODEHO,QQHU ER[ ODEHO XQLW PP ,W LV D ODEHO DW WKH WLPH RI IDFWRU\ VKLSPHQWV 7KH IRUP RI D ODEHO PD\ FKDQJH LQ SK\VLFDO GLVWULEXWLRQ SURFHVV 7\SH 1R 37<3( ႼႼႼႼႼႼႼႼႼ 7<3( &2'( /27 1R 7 /2 7 ႼႼ 7<3( 4XDQWLW\ 447< 2ULJLQ = 63( 6 ,$/ ႼႼႼႼ ႼႼႼႼႼႼႼႼႼႼႼႼႼႼ /($' )5(( 47< 62,& 3DFNLQJ IRUPDW 0D[LPXP 1XPEHU RI GHYLFHV 7\SH 3DFNDJH 1DPH ႼႼႼႼႼႼႼႼႼ /27 3$&.$*( 63(&,$/ 5HHO ODEHO ႼႼႼႼႼႼႼႼ ႼႼႼႼ SFV /($' )5((ೈ ႼႼႼႼႼႼႼႼ ႼႼႼႼႼႼႼႼ ႼႼႼႼႼႼႼႼ 63(&,$/ 127( 7KH /($' )5(( GHVFULSWLRQ VKRZV WKDW LW LV FRPSOHWH OHDG IUHH /DEHO -(,7$ 3KDVH /($' )5(( -(,7$ 3KDVH =& $66(0%/< ',))86,21 No. A1067-6/9 TIG067SS 7DSLQJ FRQILJXUDWLRQ • • • •• •• •• • ˳ s s s s s s &DUULHU WDSH VL]H XQLW PP s s s ˳ s 'HYLFH SODFHPHQW GLUHFWLRQ 3 LQ ,QGH [ 5HH O )HHG 5RXQG +R OH Feed D i rec t ion 7/ &D U U LH U 7DSH 3DFNLQJ W\SHᨿᨿᨿᨿᨿ7/ /HDGHU SRUWLRQ DQG WUDLOHU SRUWLRQ XQLW PP᧥ RU PRUH 7UDLOHU SRUWLRQ 'HYLFH PRXQWLQJ SRUWLRQ 'HYLFH PRXQWLQJ SRUWLRQ ,GOH SRUWLRQ RU PRUH /HDGHU SRUWLRQ RU PRUH &RYHU WDSH /HDGHU SRUWLRQ RU PRUH No. A1067-7/9 TIG067SS Outline Drawing TIG067SS-TL-2W Land Pattern Example Mass (g) Unit 0.082 mm * For reference Unit: mm 5.60 1.75 0.65 1.27 No. A1067-8/9 TIG067SS Note : TIG067SS has protection diode between gate and emitter but handling it requires sufficient care to be taken. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2012. Specifications and information herein are subject to change without notice. PS No. A1067-9/9