NCV78763
Power Ballast and Dual LED
Driver for Automotive Front
Lighting 2nd Generation
The NCV78763 is a single−chip and high efficient smart Power
ballast and Dual LED DRIVER designed for automotive front lighting
applications like high beam, low beam, daytime running light (DRL),
turn indicator, fog light, static cornering and so on.
The NCV78763 is a best fit for high current LEDs and provides a
complete solution to drive two strings up to 60 V, by means of two
internal independent buck switch channel outputs, with a minimum of
external components. For each individual LED channel, the output
current and voltage can be customized according to the application
requirements. An on−chip diagnostic feature for automotive front
lighting is provided, easing the safety monitoring from the
microcontroller. The device integrates a current−mode voltage booster
controller, realizing a unique input current filter with a limited BOM.
When more than two LED channels are required on one module, then
two, three or more NCV78763 devices can be combined, with the
possibility for the booster circuits to operate in multiphase−mode. This
helps to further optimize the filtering effect of the booster circuit and
allows a cost effective dimensioning for mid to high power LED systems.
Due to the SPI programmability, one single hardware setup can support
multiple system configurations for a flexible platform solution approach.
www.onsemi.com
1
1 32
QFN32
CASE 488AM
MARKING DIAGRAMS
NV78763−x
AWLYYWWG
Single Chip Boost−Buck Solution
Two LED Strings up to 60 V
High Current Capability up to 1.6 A DC per Output
High Overall System Efficiency
Minimum of External Components
Active Input Filter with Low Current Ripple from Battery
Integrated Switched Mode Buck Current Regulator
Integrated Boost Current−mode Controller
Programmable Input Current Limitation
Average Current Regulation Through the LEDs
High Operating Frequencies to Reduce Inductor Sizes
Integrated PWM Dimming with Wide Frequency Range
Low EMC Emission for LED switching and dimming
SPI Interface for Dynamic Control of System Parameters
These are Pb−Free Devices
SSOP36
1
N78763−x
AWLYYWWG
QFN32
A
WL
YY
WW
G
ORDERING INFORMATION
Front Lighting High Beam and Low Beam
Day time Running Light (DRL)
Position or Park light
Turn Indicator
Fog Light and Static Cornering
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 3
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
See detailed ordering, marking and shipping information on
page 46 of this data sheet.
Typical Applications
•
•
•
•
•
QFN32 7x7
CASE 485J
SSOP36 EP
CASE 940AB
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
32
1
Publication Order Number:
NCV78763/D
NCV78763
VDRIVE
VBB
VBOOST
VBOOSTM3V
VREGM3V
level
level
Enable
VBOOST_AUXSUP
VREG10V
IBCKxSENSE+
VDD
VREG3V
I sense
IBCKxSENSE−
Buck regulator X 2
VINBCKx
Level
shifter
VGATE
POWER STAGE
Booster
controller
Driver
VFB
Vsf
Boost
predrive
Over
current
detection
BOOST PREDRV
VREF
IBSTSENSE+
LBCKSWx
V
REF
VDD
I_sense
IBSTSENSE−
Comp
f_BST
OTA
gain
VLEDx
Fixed Toff
time
DIGITAL CONTROL
COMP
BSTSYNC
5V input
LEDCTRLx
5V input
SPI bus
Channel
selector
VBOOST
8
ADC
MUX
VBB
VLED1
5V in / OD out
VLED2
VDD
BIAS
VDD
POR3V
VDD
VDD
VDD
BGAP
OSC 8MHz
Figure 1. Internal Block Diagram
www.onsemi.com
2
TEMPdet
NCV78763
IBCK1SENS+
33
5
VDRIVE
IBCK1SENS–
32
6
VBB
VINBCK1
31
7
TST
VINBCK1
30
8
COMP
LBCKSW1
29
9
LBCKSW2
27
11
TST1
LBCKSW2
26
12
BSTSYN
VINBCK2
25
13
LEDCTRL1
VINBCK2
24
14
LEDCTRL2
IBCK2SENS–
23
15
SCLK
24
2
TST
IBCK1SENS–
23
3
COMP
22
21
4
GND
5
VDD
LBCKSW2
20
6
TST1
VINBCK2
19
7
BSTSYN
IBCK2SENS–
18
8
LEDCTRL1
IBCK2SENS+
17
IBCK2SENS+
22
16 CSB
VLED1
21
17 SDI
VLED2
20
9
10
11
12
TST2
19
18 SDO
VINBCK1
LBCKSW1
SDI
10 VDD
IBCK1SENS+
CSB
28
VBB
SCLK
LBCKSW1
25
1
LEDCTRL2
GND
26
13
14
15
Figure 3. Pin Connections (QFN32)
Figure 2. Pin Connections (SSOP36 EP)
www.onsemi.com
3
VLED1
VGATE
27
VLED2
4
28
TST2
34
29
VBOOSTBCK
VBOOSTBCK
30
VBOOSTM3V
GNDP
31
VBOOST
3
32
IBSTSENS –
35
IBSTSENS +
IBSTSENS +
GNDP
36
VGATE
VBOOST
VBOOSTM3V
VDRIVE
IBSTSENS –
2
SDO
1
16
NCV78763
Table 1. PIN DESCRIPTION
Pin No.
SSOP36−EP
Pin No.
QFN32
Pin Name
1
28
IBSTSENSE−
Battery current negative feedback input
LV in/out
2
29
IBSTSENSE+
Battery current positive feedback input
LV in/out
3
30
GNDP
Power ground
Ground
4
31
VGATE
Booster MOSFET gate pre−driver
MV out
5
32
VDRIVE
10V supply
MV supply
6
1
VBB
Battery supply
HV supply
7
2
TST
Internal function. To be tied to GND.
LV in/out
8
3
COMP
Compensation for the Boost regulator
LV in/out
9
4
GND
Ground
Ground
10
5
VDD
3V logic supply
LV supply
Function
I/O Type
11
6
TST1
Internal function. To be tied to GND.
LV in/out
12
7
BSTSYN
External clock for the boost regulator
MV in
13
8
LEDCTRL1
LED string 1 enable
MV in
14
9
LEDCTRL2
LED string 2 enable
MV in
15
10
SCLK
SPI clock
MV in
16
11
CSB
SPI chip select (chip select bar)
MV in
17
12
SDI
SPI data input
18
13
SDO
SPI data output
19
14
TST2
Internal function. To be tied to GND.
20
15
VLED2
LED string 2 forward voltage input
HV in
21
16
VLED1
LED string 1 forward voltage input
HV in
22
17
IBCK2SENSE+
Buck 2 positive sense input
HV in
23
18
IBCK2SENSE−
Buck 2 negative sense input
HV in
24
19
VINBCK2
Buck 2 high voltage supply
HV in
25
X
VINBCK2
Buck 2 high voltage supply
HV in
26
20
LBCKSW2
Buck 2 switch output
HV out
27
X
LBCKSW2
Buck 2 switch output
HV out
28
21
LBCKSW1
Buck 1 switch output
HV out
29
X
LBCKSW1
Buck 1 switch output
HV out
30
22
VINBCK1
Buck 1 high voltage supply
HV in
31
X
VINBCK1
Buck 1 high voltage supply
HV in
32
23
IBCK1SENSE−
Buck 1 negative sense input
HV in
33
24
IBCK1SENSE+
Buck 1 positive sense input
HV in
34
25
VBOOSTBCK
High voltage for the BUCK switches
35
26
VBOOSTM3V
VBOOST−3V regulator output
HV out (supply)
36
27
VBOOST
Boost voltage feedback input
HV in
www.onsemi.com
4
MV in
MV open−drain
LV in/out
HV supply
NCV78763
VBAT
(after rev. pol. Prot.)
D_BST
FET_BST
L_BST
RPD_BST
C_BST_IN
C_BST
C_M3V
RSENSE_BST
VBOOSTBCK
BSTSYNC
VBOOST
COMP
VBOOSTM3V
IBSTSENSE+
VGATE
R_BC1
IBSTSENSE−
C_BC2
C_BC1
IBCK1SENSE+
IBCK1SENSE−
RBUCK_1
LED−string 1
VINBCK1
C_BB
L_BCK_1
VBB
LBCKSW1
ON Semiconductor
LED driver
VLED1
Front Lighting IBCK2SENSE+
C_DRIVE
VDRIVE
C_DD
VDD
IBCK2SENSE−
5V (5V MCU assumed)
NCV78763
R_VLED_1
C_BCK_1
RBUCK_2
LED−string 2
VINBCK2
R_SDO
MCU
D_BCK_1
L_BCK_2
LBCKSW2
LEDCTRL1
D_BCK_2
C_BCK_2
LEDCTRL2
VLED2
SPI_SCLK
R_VLED_2
SPI_SDI
SPI_SDO
PWR GND
SPI_CSB
TST
TST1
TST2
GND
GNDP
EP
Sig GND
Figure 4. NCV78763 Application Diagram
Note A: as reported in the application diagram, the device pins TST, TST2 & TST1 must be connected to the signal ground GND.
Note B: external capacitors or RC may be added to these SPI lines for stable communication in case of application noise. The selection
of these components must be done so that the resulting waveforms are respecting the limits reported in Table 19.
Note C: recommended values for the external MOSFET pull down resistor RPD_BST range from 10 kW to 33 kW.
Note D: the minimum value for the LED feedback resistors R_VLED_1 and R_VLED_2 is 1 kW.
www.onsemi.com
5
NCV78763
Table 2. ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Min
Max
Unit
VBB
−0.3
60
V
VBOOST
−0.3
68
V
VDD
−0.3
3.6
V
VDRIVE
−0.3
12
V
Input current sense voltage pins
IBSTSENSE+,
IBSTSENSE−
−1.0
12
V
Medium voltage IO pins (Note 5)
IOMV
−0.3
7.0
V
Relative voltage IO pins (Note 6)
DV_IO
VBOOSTM3V
VBOOSTBCK
V
LBCKSW1,
LBCKSW2
−2.0
VBOOSTBCK
V
Current into or out of the VLED pin
IVLEDpin
−30
30
mA
Series resistor on the VLED pin
RVLEDx
1
Storage Temperature (Note 8)
Tstrg
−50
Lead Temperature Soldering Reflow (SMD Styles Only), Pb−Free
Versions (Note 9)
TSLD
Electrostatic discharge on component level (Note 10)
VESD
Battery Supply voltage (Note 1)
LED supply voltage (Note 2)
Logic Supply voltage (Note 3)
MOSFET Gate driver supply voltage (Note 4)
Buck switch low side (Note 7)
kW
−2
150
°C
260
°C
+2
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Absolute maximum rating for pin VBB.
2. Absolute maximum rating for pins: VBOOST, VBOOSTM3V, IBCK1SENSE+, IBCK1SENSE−, VINBCK1, VLED1, IBCK2SENSE+,
IBCK2SENSE−, VINBCK2, VLED2.
3. Absolute maximum rating for pins: VDD, TEST1, TEST2, COMP.
4. Absolute maximum rating for pins: VDRIVE, VGATE.
5. Absolute maximum rating for pins: SCLK, CSB, SDI, SDO, LEDCTRL1, LEDCTRL2, BSTSYNC. The device tolerates 5 V coming from the
external logics (MCU) when in off state.
6. Relative maximum rating for pins: VINBCK1, VINBCK2, IBCK1SENSE+, IBCK2SENSE+, IBCK1SENSE−, IBCK2SENSE−.
7. Requirement: V(VINBCKx − LBCKSWx) < 70 V.
8. For limited time up to 100 hours, otherwise the max. storage temperature < 85°C.
9. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
10. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latch−up Current Maximum Rating: ≤150 mA per JEDEC standard: JESD78
Table 3. RECOMMENDED OPERATING RANGES
The recommended operating ranges define the limits for functional operation and parametric characteristics of the device. Note that the
functionality of the device outside the operating ranges described in this section is not warranted. Operating outside the recommended
operating ranges for extended periods of time may affect device reliability. A mission profile (Note 11) is a substantial part of the
operation conditions; hence the Customer must contact ON Semiconductor in order to mutually agree in writing on the allowed missions
profile(s) in the application.
Characteristic
Battery Supply voltage
Gate driver supply current (Note 12)
Symbol
Min
Max
Unit
VBB
4
40
V
40
mA
IDRIVE
Functional operating junction temperature (Note 13)
TJF
−45
155
°C
Parametric operating junction temperature range
TJP
−40
150
°C
1.9
A
Buck switch output current peak
ILBUCKpeak
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
11. The parametric characteristics of the circuit are not guaranteed outside the Parametric operating junction temperature range. A mission
profile describes the application specific conditions such as, but not limited to, the cumulative operating conditions over life time, the system
power dissipation, the system’s environmental conditions, the thermal design of the customer’s system, the modes, in which the device is
operated by the customer, etc.
12. IDRIVE = QTgate x FBOOST (external MOSFET total gate charge multiplied by booster driving frequency).
13. The circuit functionality is not guaranteed outside the functional operating junction temperature range. The maximum functional operating
range can be limited by thermal shutdown “Tsd” (ADC_Tsd, see Table 10). Also please note that the device is verified on bench for operation
up to 170°C but that the production test guarantees 155°C only.
www.onsemi.com
6
NCV78763
Table 4. THERMAL RESISTANCE
Package
Symbol
Value
Unit
Thermal resistance package to Exposed Pad (Note 14)
Characteristic
SSOP36−EP
qJcbot
3.5
°C/W
Thermal resistance package to Exposed Pad (Note 14)
QFN32 7x7
qJcbot
3.4
°C/W
Thermal resistance package to Exposed Pad (Note 14)
QFN32 5x5
qJcbot
3.4
°C/W
14. Includes also typical solder thickness under the Exposed Pad (EP).
ELECTRICAL CHARACTERISTICS NOTE: Unless differently specified, all device Min and Max parameters boundaries are
given for the full supply operating ranges and junction temperature (TJP) range (−40°C; +150°C).
Table 5. VBB: BATTERY SUPPLY INPUT
Characteristic
Symbol
Nominal Operating
Supply Range
VBB
Device Current
Consumption
IBB_0
Conditions
Min
Typ
5
buck regulators off, gate drive off, outputs unloaded
Max
Unit
40
V
8
mA
Table 6. VDRIVE: SUPPLY FOR BOOSTER MOSFET GATE DRIVE CIRCUIT
Characteristic
VDRIVE reg. voltage
from VBB (Note 15)
VDRIVE from VBB
increase per code
(Note 15)
VDRIVE reg. voltage
from VBOOST
(Note 15)
Symbol
Conditions
Min
Typ
Max
Unit
VDRV_BB_15
VBB − VDRIVE > 1.65 V
@IDRIVE = 25 mA
VDRIVE_ SETPOINT[3:0] =
1111
9.7
10.1
10.7
V
VDRV_BB_00
VBB − VDRIVE > 1.65 V
@IDRIVE = 25 mA
VDRIVE_ SETPOINT[3:0] =
0000
4.8
5
5.3
V
DVDRV_BB
Linear increase, 4Bits
VDRV_BST_15
VBOOST − VDRIVE > 3 V
@IDRIVE = 40 mA
VDRIVE_SETPOINT[3:0] =
1111
9.5
10.1
10.7
V
VDRV_BST_00
VBOOST − VDRIVE > 3 V
@IDRIVE = 40 mA
VDRIVE_SETPOINT[3:0] =
0000
4.7
5
5.3
V
0.34
V
VDRIVE from
VBOOST increase per
code (Note 15)
DVDRV_BST
VDRIVE Output
current limitation from
VBB input
VDRV_BB_IL
40
400
mA
VDRIVE Output
current limitation from
VBOOST input
VDRV_BB_IL
40
200
mA
VDRIVE decoupling
capacitor
CVDRIVE
VDRIVE decoupling
capacitor ESR
CVDRIVE_ESR
Linear increase, 4 Bits
0.34
V
470
nF
100
mW
15. The VDRIVE voltage setpoint is in the same range if the current is either provided by VBB or VBOOST pin. The voltage headroom between
VBB and VDRIVE or VDRIVE and VBOOST needs to be sufficient. For what concerns VDRIVE from VBB, in case of 25 mA current, the
worst case headroom is 1.65V. The VBOOST_AUX regulator can be enabled by SPI (bit VDRIVE_BST_EN[0]).
www.onsemi.com
7
NCV78763
Table 7. VDD: 3V LOW VOLTAGE ANALOG AND DIGITAL SUPPLY
Characteristic
Symbol
VBB to VDD switch
disconnection
VBB_LOW
Conditions
VDD regulator output
voltage
VDD
VBB > 4 V
DC total current
consumption including
output
VDD_IOUT
VBB > 4 V
DC current limitation
VDD_ILIM
VBB > 4 V
VDD external
decoupling cap.
CVDD
Min
Typ
Max
Unit
3.65
3.9
V
3.15
3.4
V
15
mA
240
mA
2.2
mF
200
mW
15
0.3
0.47
VDD ext. decoupling
cap. ESR
CVDD_ESR
POR Toggle level on
VDD rising
POR3V_H
2.7
3.05
V
POR Toggle level on
VDD falling
POR3V_L
2.45
2.8
V
POR Hysteresis
POR3V_HYST
0.2
V
Table 8. VBOOSTM3: HIGH SIDE MOSFETS AUXILIARY SUPPLY
Characteristic
Symbol
VBSTM3 regulator
output voltage
VBSTM3
VBSTM3 DC output
current consumption
VBSTM3_IOUT
VBSTM3 Output
current limitation
VBSTM3_ILIM
VBSTM3 external
decoupling capacitor
CVBSTM3
VBSTM3 external
decoupling cap. ESR
CVBSTM3_ESR
Conditions
Min
Typ
Max
Unit
−3.6
−3.3
−3.0
V
5
0.3
0.47
mA
200
mA
2.2
mF
200
mW
Table 9. OSC8M: SYSTEM OSCILLATOR CLOCK
Characteristic
System oscillator
frequency
Symbol
Conditions
Min
Typ
Max
Unit
FOSC8M
After device factory trimming
7.1
8.0
8.9
MHz
Min
Typ
Max
Unit
Table 10. ADC FOR MEASURING VBOOST, VBB, VLED1, VLED2, VTEMP
Characteristic
Symbol
Conditions
ADC Resolution
ADCRES
Integral Nonlinearity
(INL)
ADCINL
−1.5
+1.5
LSB
Differential
Nonlinearity (DNL)
ADCDNL
−2.0
+2.0
LSB
Full path gain error for
measurements via
VBB, VLEDx,
VBOOST
ADCGAINERR
−3.25
3.25
%
Offset at output of
ADC
ADCOFFSET
−2
2
LSB
Time for 1 SAR
conversion
8
ADCCONV_TIME
8
www.onsemi.com
8
Bits
ms
NCV78763
Table 10. ADC FOR MEASURING VBOOST, VBB, VLED1, VLED2, VTEMP (continued)
Characteristic
Symbol
ADC full scale for VBB
measurement
ADCFS_VBB
39.7
V
ADC full scale for
VLED
ADCFS_VLED
69.5
V
ADC full scale for
Vboost
ADCFS_VBST
69.5
V
ADC internal
temperature
measurement for
thermal shutdown
ADCTSD
163
VLEDR_IN
255
VLED input
impedance
Conditions
Min
Typ
169
Max
Unit
175
°C
710
kW
Table 11. BOOSTER CONTROLLER − VOLTAGE REGULATION PARAMETERS
Characteristic
Symbol
Conditions
SPI Setting
Min
Typ
Max
Unit
BST_OV_07
DV to the reg. level, DC
level
[BOOST_OV_SD = 111]
5.3
5.8
6.3
V
BST_OV_06
DV to the reg. level, DC
level
[BOOST_OV_SD = 110]
4.3
4.85
5.3
BST_OV_05
DV to the reg. level, DC
level
[BOOST_OV_SD = 101]
3.4
3.9
4.3
BST_OV_04
DV to the reg. level, DC
level
[BOOST_OV_SD = 100]
2.4
2.9
3.3
BST_OV_03
DV to the reg. level, DC
level
[BOOST_OV_SD = 011]
1.9
2.4
2.8
BST_OV_02
DV to the reg. level, DC
level
[BOOST_OV_SD = 010]
1.5
2
2.3
BST_OV_01
DV to the reg. level, DC
level
[BOOST_OV_SD = 001]
1.2
1.5
1.8
BST_OV_00
DV to the reg. level, DC
level
[BOOST_OV_SD = 000]
0.6
1
1.3
V
Booster overvoltage
shutdown increase per
code
DBST_OV
Linear increase, 2 bits,
DC level
0.5/1
0.6/1.2
V
Booster overvoltage
re−activation
BST_RA_3
DV to the VBOOST reg.
overvoltage protection,
DC level
[BOOST_OV_REACT = 11]
−1.4
−1
V
Booster overvoltage
re−activation
BST_RA_0
DV to the VBOOST reg.
overvoltage protection,
DC level
[BOOST_OV_REACT = 00]
Booster overvoltage
re−activation decrease
per code
DBST_RA
Linear decrease, 2 bits,
DC level
BST_REG_127
DC level
BST_REG_001
Booster overvoltage
shutdown (Note 16)
Booster regulation
setpoint voltage
Booster regulation
setpoint increase step
per code
−1.8
V
V
V
V
V
V
0
V
−0.6
−0.5
V
[BOOST_VSETPOINT =
1111111]
62.8
64.1
66
V
DC level
[BOOST_VSETPOINT =
0000001]
14.4
15
15.6
V
BST_REG_000
DC level
[BOOST_VSETPOINT =
0000000]
10.5
11
11.5
V
DBST_REG
Linear increase, 7 bits
0.39
0.55
V
www.onsemi.com
9
NCV78763
Table 11. BOOSTER CONTROLLER − VOLTAGE REGULATION PARAMETERS
Characteristic
Booster Error Amplifier
(EA)
Trans−conductance
Gain Gm
EA max output current
(positive/source)
EA max output current
(negative/sink)
EA max output
leakage current in
tri−state
EA equivalent output
resistance
Symbol
Conditions
SPI Setting
Min
Typ
Max
Unit
EA_Gm_3
Seen from VBOOST pin
input, DC value
[BOOST_OTA_GAIN = 11]
63
90
117
mS
EA_Gm_2
Seen from VBOOST pin
input, DC value
[BOOST_OTA_GAIN = 10]
42
60
78
mS
EA_Gm_1
Seen from VBOOST pin
input, DC value
[BOOST_OTA_GAIN = 01]
21
30
39
mS
EA_Gm_0
Seen from VBOOST pin
input, High impedance
tri−state
[BOOST_OTA_GAIN = 00]
EA_Iout_pos_max_03
EA_Gm_03 is set
[BOOST_OTA_GAIN = 11]
EA_Iout_pos_max_02
EA_Gm_02 is set
EA_Iout_pos_max_01
0
mS
150
180
mA
[BOOST_OTA_GAIN = 10]
100
120
mA
EA_Gm_01 is set
[BOOST_OTA_GAIN = 01]
50
60
mA
EA_Iout_neg_max_03
EA_Gm_03 is set
[BOOST_OTA_GAIN = 11]
−180
−150
mA
EA_Iout_neg_max_02
EA_Gm_02 is set
[BOOST_OTA_GAIN = 10]
−120
−100
mA
EA_Iout_neg_max_01
EA_Gm_01 is set
[BOOST_OTA_GAIN = 01]
−60
−50
mA
EA_Iout_leak
EA_Gm_00 is set (EA
disabled, high impedance
tri−state)
[BOOST_OTA_GAIN = 00]
−1
1
mA
0.7
2.9
MW
EA_ROUT
COMP_CLH3
(BST_SLPCTRL_3 or
BST_SLPCTRL_2) &
(BST_VLIMTH_3 or
BST_VLIMTH_2)
[BOOST_SLP_CTRL = 1x] &
[BOOST_VLIMTH = 1x]
2.1
2.26
V
COMP_CLH2
BST_SLPCTRL_3 or
BST_SLPCTRL_2) &
(BST_VLIMTH_1 or
BST_VLIMTH_0)
[BOOST_SLP_CTRL = 1x] &
[BOOST_VLIMTH = x1]
1.8
1.98
V
COMP_CLH1
BST_SLPCTRL_1 or
BST_SLPCTRL_0) &
(BST_VLIMTH_3 or
BST_VLIMTH_2)
[BOOST_SLP_CTRL = x1] &
[BOOST_VLIMTH = 1x]
1.5
1.64
V
COMP_CLH0
BST_SLPCTRL_1 or
BST_SLPCTRL_0 ) &
(BST_VLIMTH_1 or
BST_VLIMTH_0)
[BOOST_SLP_CTRL = x1] &
[BOOST_VLIMTH = x1]
1.2
1.35
V
EA max output voltage
(at VCOMP pin)
EA min output voltage
(at VCOMP pin)
COMP_CLL
Division factor of
VCOMP voltage
towards the Current
comparator input
COMP_DIV
7
Voltage shift (offset)
on VCOMP on Current
comparator input
COMP_VSF
0.5
V
Booster skip cycle for
low currents (Note 17)
0.4
V
BST_SKCL_3
[BOOST_SKCL = 11]
0.7 or
0.8
V
BST_SKCL_2
[BOOST_SKCL = 10]
0.625
or
0.7
V
BST_SKCL_1
[BOOST_SKCL = 01]
0.55 or
0.6
V
www.onsemi.com
10
NCV78763
Table 11. BOOSTER CONTROLLER − VOLTAGE REGULATION PARAMETERS
Characteristic
Symbol
VGATE comparator to
start BST_TOFF time
BST_VGATE_THR_1
[VBOOST_VGATE_THR = 1]
1.2
V
BST_VGATE_THR_0
[VBOOST_VGATE_THR = 0]
0.4
V
Booster PWM
frequency (when from
internal generation)
Booster PWM freq.
increase per code
Booster minimum OFF
time (Note 18)
Booster minimum ON
time (Note 18)
Conditions
SPI Setting
Min
Typ
Max
Unit
BST_FREQ_31
FOSC8M / 38
[BOOST_FREQ = 11111]
187
210
234
kHz
BST_FREQ_01
FOSC8M / 8
[BOOST_FREQ = 00001]
890
1000
1110
kHz
BST_FREQ_00
PWM clock disabled
[BOOST_FREQ = 00000]
DBST_FREQ
Nonlinear increase, 5 bits
0
kHz
5−112
kHz
BST_TOFF_MIN_3
[VBOOST_TOFFMIN = 11]
100
155
210
ns
BST_TOFF_MIN_2
[VBOOST_TOFFMIN = 10]
140
195
250
ns
BST_TOFF_MIN_1
[VBOOST_TOFFMIN = 01]
30
75
120
ns
BST_TOFF_MIN_0
[VBOOST_TOFFMIN = 00]
70
115
160
ns
BST_TON_MIN_3
[VBOOST_TONMIN = 11]
235
300
365
ns
BST_TON_MIN_2
[VBOOST_TONMIN = 10]
200
260
320
ns
BST_TON_MIN_1
[VBOOST_TONMIN = 01]
150
200
250
ns
BST_TON_MIN_0
[VBOOST_TONMIN = 00]
100
150
200
ns
16. The following condition must always be respected: BST_REG_XX + BST_OV_X < 68 V.
17. The higher levels indicated in the cells are valid for BST_VLIMTH_2 and BST_VLIMTH_3 selection (BOOST_VLIMTH<1> = 1).
18. Rise and fall time of the VGATE is not included.
Table 12. BOOSTER CONTROLLER − CURRENT REGULATION PARAMETERS
Characteristic
Symbol
Current comparator for
Imax detection
Current comparator for
VBOOST regulation,
offset voltage
Booster slope
compensation
SPI setting
Min
Typ
Max
Unit
BST_VLIMTH_3
[BOOST_VLIMTH = 11]
95
100
105
mV
BST_VLIMTH_2
[BOOST_VLIMTH = 10]
75
80
85
mV
BST_VLIMTH_1
[BOOST_VLIMTH = 01]
57
62.5
67
mV
BST_VLIMTH_0
[BOOST_VLIMTH = 00]
45
50
55
mV
−5
0
5
mV
BST_OFFS
BST_SLPCTRL_3
[BOOST_SLPCTRL = 11]
20
mV/ ms
BST_SLPCTRL_2
[BOOST_SLPCTRL = 10]
10
mV/ ms
BST_SLPCTRL_1
[BOOST_SLPCTRL = 01]
5
mV/ ms
[BOOST_SLPCTRL = 00]
0
mV/ ms
BST_SLPCTRL_0
Booster Current
Sense voltage
common mode range
Conditions
(no slope control)
CMVSENSE
−0.1
1
V
Table 13. BOOSTER CONTROLLER − MOSFET GATE DRIVER
Typ
Max
Unit
High−side switch
impedance
Characteristic
Symbol
RONHI
Conditions
Min
2.5
4
W
Low−side switch
impedance
RONLO
2.5
4
W
Typ
Max
Unit
Table 14. BUCK REGULATOR − INTERNAL SWITCHES CHARACTERISTICS
Characteristic
Buck switch On
resistance
Symbol
Conditions
RDS(on)
At room−temperature, I(VINBCKx) pin = 1.5 A,
(VBOOST−VINBCKx) = 0.2 V
0.65
W
RDS(on)_hot
At Tj = 150°C, I(VINBCKx) pin = 1.5 A,
(VBOOST−VINBCKx) = 0.2 V
0.9
W
www.onsemi.com
11
Min
NCV78763
Table 14. BUCK REGULATOR − INTERNAL SWITCHES CHARACTERISTICS
Characteristic
Symbol
Conditions
Min
Typ
1.9
Max
Unit
3
A
Buck Overcurrent
detection
OCD
Buck Switching slope
(ON phase)
Trise
3
V/ns
Buck Switching slope
(OFF phase)
Tfall
2
V/ns
Table 15. BUCK REGULATOR − CURRENT REGULATION PARAMETERS
Characteristic
Symbol
Conditions
Min
Typ
Max
Unit
Buck current sense
threshold voltage
VTHR_255
[BUCKx_VTHR = 11111111]
412
mV
Buck current sense
threshold voltage
VTHR_000
[BUCKx_VTHR = 00000000]
31.5
mV
Buck current sense
threshold voltage
increase per code
DVTHR
exponential increase,
7.5 bits equivalent, DC
level
Buck threshold voltage
temperature stability
VTHR_TEMP
Without chopper function
Buck threshold voltage
accuracy (Note 21)
VTHR_ERR
Without chopper function
1.013
1.5
%
−1.5 &
−2
+1.5 &
+2
%&
mV /
100°C
−3 &
−6
+3 &
+6
%&
mV
Buck TOFFxVLED
constant setting for
shortest OFF time
TOFF_VLED_15
[BUCKx_TOFFVLED = 1111]
10
ms V
Buck TOFFxVLED
constant setting for
longest OFF time
TOFF_VLED_00
[BUCKx_TOFFVLED = 0000]
50
ms V
Buck OFF time
relative error
BCK_TOFF_ERR_REL
TOFF xVLED @VLED >
2 V & TOFF > 0.35 ms
−10
0
10
%
Buck OFF time
absolute error
BCK_TOFF_ERR_ABS
TOFF xVLED @VLED >
2 V & TOFF ≤ 0.35 ms
−35
0
35
ns
Buck OFF time setting
decrease per code
DTC
exponential increase,
4 bits, DC level
Detection level for low
VLED voltages
VLED_LMT
1.62
1.8
1.98
V
Buck ON too long time
detection (OPEN
LOAD)
BCK_TON_OPEN
44.3
50
55.7
ms
Buck minimum ON
time mask in
regulation (Note 20)
BCK_TON_MIN
50
250
ns
Buck OFF time for
short circuit detected
on VLEDx
BCK_TOFF_SHORT
VLEDx < VLED_LMT
63
90
ms
Delay from BUCK
ISENS comparator
input to BUCK switch
going OFF (Note 21)
BCK_CMP_DEL
ISENS comparator
over−drive ramp >
1 mV/10 ns
11.33
70
%
ns
19. Without use of buck chopper function (for sufficient coil current ripple, see buck section in the datasheet). With the buck chopper function,
the offset is reduced to a level lower than ±|3 mV|.
20. The buck ISENSE comparator is active at the end of this mask time.
21. BCK_CMP_DEL < 120 ns, guaranteed by laboratory measurement, not tested in production.
www.onsemi.com
12
NCV78763
Table 16. 5V TOLERANT DIGITAL INPUTS (SCLK, CSB, SDI, LEDCTRL1, LEDCTRL2, BSTSYNC)
Characteristic
Symbol
Conditions
Min
High−level input
voltage
VINHI
Low−level input
voltage
VINLO
Input digital in leakage
current (Note 22)
RPULL
40
BUCKx_SW_DEL
3.6
LEDCTRLx to PWM
dimming propagation
delay
Typ
Max
2
Unit
V
4
0.8
V
160
kW
4.9
ms
Max
Unit
0.4
V
40
W
2
mA
22. Pull down resistor (Rpulldown) for LEDCTRLx, BSTSYNC, SDI and SCLK, pull up resistor (Rpullup) for CSB to VDD.
Table 17. 5V TOLERANT OPEN−DRAIN DIGITAL OUTPUT (SDO)
Characteristic
Symbol
Conditions
VOUTLO
Iout = −10 mA (current flows into the pin)
Equivalent output
resistance
RDS(on)
Low−side switch
SDO pin leakage
current
SDO_ILEAK
Low−voltage output
voltage
SDO pin capacitance
(Note 23)
SDO_C
CLK to SDO
propagation delay
(Note 24)
SDO_DL
Min
Typ
20
10
Low−side switch activation/deactivation time
pF
320
ns
23. Guaranteed by bench measurement, not tested in production.
24. Values valid for 1 kW external pull−up connected to 5 V and 100 pF to GND, when in case of falling edge the voltage on the SDO pin goes
below 0.5 V. This delay is internal to the chip and does not include the RC charge at pin level when the output goes to high impedance.
Table 18. 3V TOLERANT DIGITAL PINS (TST1, TST2)
Characteristic
Symbol
High−level input
voltage
VINHI
Low−level input
voltage
VINLO
Conditions
Min
Typ
Max
2
Unit
V
0.8
V
Input leakage current
TST1 pin
TST1_Rpulldown
Internal pull−down resistance
19
32
47
kW
Input leakage current
TST2 pin
TST2_Rpulldown
Internal pull−down resistance
1.6
4
5.9
kW
www.onsemi.com
13
NCV78763
Table 19. SPI INTERFACE
Characteristic
Symbol
Conditions
Min
Typ
Max
Unit
CSB setup time
tCSS
500
ns
CSB hold time
tCSH
250
ns
SCLK low time
tWL
500
ns
SCLK high time
tWH
500
ns
Data−in (DIN) setup
time
tSU
250
ns
Data−in (DIN) hold
time
tH
275
ns
SDO disable time
tDIS
110
320
ns
SDO valid for high lo
low transition
tSDO_HL
320
ns
SDO valid for low lo
high transition
(Note 25)
tSDO_LH
320 +
t(RC)
ns
SDO hold time
tHO
110
ns
CSB high time
tCS
1000
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
25. Time depends on the SDO load and pull–up resistor.
tCS
VIH
CSB
VIL
tCSS
tWH
tWL
tCSH
VIH
SCLK
VIL
tSU
tH
VIH
DIN
DIN15
DIN 13
DIN14
VIL
DIN1
DIN0
tDIS
tHO
tV
VIH
DOUT
HI−Z
DOUT 15
DOUT14
DOUT13
DOUT1
VIL
Figure 5. NCV78763 SPI Communication Timing
www.onsemi.com
14
DOUT 0
HI−Z
NCV78763
TYPICAL CHARACTERISTICS
Figure 6. Buck Peak Comparator Threshold (Note 26)
Figure 7. Buck MOSFET Typical RDS(on) Over Silicon Junction Temperature
26. Curve obtained by applying the typical exponential increase from the min value VTHR_000. Please see Table 15 for details.
www.onsemi.com
15
NCV78763
DETAILED OPERATING AND PIN DESCRIPTION
SUPPLY CONCEPT IN GENERAL
respond to this necessity, the NCV78763 is designed to
support power−up starting from VBB = 5 V.
Low operating voltages become more and more required
due to the growing use of start stop systems. In order to
Figure 8. Cranking Pulse (ISO7637−1): System has to be Fully Functional (Grade A) from Vs = 5 V to 28 V
VDRIVE Supply
guaranteed for VBB voltages lower than 4 V and that for
very low voltages a reset will be generated (see Table 7).
Note: powering the device via the VBOOST_AUXSUP will
produce an extra power dissipation linked to the related
linear drop (VBOOST − VBOOST_AUXSUP), which must
be taken into account during the thermal design.
The VDRIVE supply voltage represents the power for the
complete the BOOST PREDRV block, which generates the
VGATE, used to switch the booster MOSFET. The voltage
is programmable via SPI in 16 different values (register
VDRIVE_SETPOINT[3:0], ranging from a minimum of
5 V typical to 10 V typical: see Table 6). This feature allows
having the best switching losses vs. resistive losses trade off,
according to the MOSFET selection in the application, also
versus the minimum required battery voltage. The lowest
settings can be exploited to drive logic gate drive MOSFETs.
In order to support low VBB battery voltages and long crank
pulse drops, the VDRIVE supply can take its energy from
the source with the highest output voltage, either from (refer
to Figure 1):
• the VREG10V supply, which derives its energy from
the VBB input.
• the VBOOST_AUXSUP, which gets its energy from
the VBOOST path. In order to enable this condition the
bit VDRIVE_BST_EN[0] = 1. It is highly
recommended to enable this function at module running
mode in order to insure proper MOSFET gate drive
even in case of large battery drop transients.
Under normal operating conditions, when the voltage
headroom between VBB and VREG10V is sufficient, the
gate driver energy is entirely supplied via the VBB path. In
case the VBOOST_AUX regulator is enabled, it will start to
draw part of the required current starting as from when the
headroom reduces below the minimum requirement, then
linearly increasing, until bearing 100% of the IDRIVE
current when the VBB drops close or below the VDRIVE
target and still enough energy can be supplied by the booster
circuit. Please note that the full device functionality is not
VDD Supply
The VDD supply is the low voltage digital and analog
supply for the chip and derives energy from VBB. Due to the
low dropout regulator design, VDD is guaranteed already
from low VBB voltages. The Power−On−Reset circuit
(POR) monitors the VDD voltage and the VBB voltage to
control the out−of−reset and reset entering state: an internal
switch disconnects the VDD regulator from the VBB input
as its voltage drops below the admitted threshold
VBB_LOW (Table 7); this originates a VDD discharge that
will result in a device reset either if the voltage falls below
the PORL level or in general, if due to the drop, the VDD
regulation target cannot be kept for more than typically
100 ms. At power-up, the chip will exit from reset state when
VBB > VBB_LOW and VDD > PORH.
VBOOSTM3V Supply
The VBOOSTM3V is the high side auxiliary supply for
the gate drive of the buck regulators’ integrated high−side
P−MOSFET switches. This supply receives energy directly
from the VBOOST pin.
INTERNAL CLOCK GENERATION − OSC8M
An internal RC clock named OSC8M is used to run all the
digital functions in the chip. The clock is trimmed in the
factory prior to delivery. Its accuracy is guaranteed under
full operating conditions and is independent from external
component selection (refer to Table 9 for details).
www.onsemi.com
16
NCV78763
ADC
Referring to the figure above, the typical rate for a full
SAR plus digital conversion per channel is 8 ms (Table 10).
For instance, each new VBOOST ADC converted sample
occurs at 16 ms typical rate, whereas for both the VBB and
VTEMP channel the sampling rate is typically 32 ms, that is
to say a complete cycle of the depicted sequence. This time
is referred to as TADC_SEQ.
If the SPI setting LED_SEL_DUR[8:0] is not zero, then
interrupts for the VLEDx measurements are allowed at the
points marked with a rhombus, with a minimum cadence
corresponding to the number of the elapsed ADC sequences
(forced interrupt). In formulas:
General
The built−in analog to digital converter (ADC) is an 8−bit
capacitor based successive approximation register (SAR).
This embedded peripheral can be used to provide the
following measurements to the external Micro Controller
Unit (MCU):
• VBOOST voltage: sampled at the VBOOST pin;
• VBB voltage (linked to the battery line);
• VLED1ON, VLED2ON voltages;
• VLED1 and VLED2 voltages;
• VTEMP measurement (chip temperature).
The internal NCV78763 ADC state machine samples all
the above channels automatically, taking care for setting the
analog MUX and storing the converted values in memory.
The external MCU can readout all ADC measured values via
the SPI interface, in order to take application specific
decisions. Please note that none of the MCU SPI commands
interfere with the internal ADC state machine sample and
conversion operations: the MCU will always get the last
available data at the moment of the register read.
The state machine sampling and conversion scheme is
represented in the figure below.
T VLEDx_INT_forced + LED_SEL_DUR[8 : 0]
T ADC_SEQ
In general, prior to the forced interrupt status, the
VLEDxON ADC interrupts are generated when a falling
edge on the control line for the buck channel ”x” is detected
by the device. In case of external dimming, this interrupt
start signal corresponds to the LEDCTRLx falling edge
together with a controlled phase delay (Table 16). When in
internal dimming, the phase delay is also internally created,
in relation with the falling edge of the dimming signal. The
purpose of the phase delay is to allow completion the
ongoing ADC conversion before starting the one linked to
the VLEDx interrupt: if at the moment of the conversion
LEDCTRLx pin is logic high, then the updated registers are
VLEDxON[7:0] and VLEDx[7:0]; otherwise, if
LEDCTRLx pin is logic low, the only register refreshed is
VLEDx[7:0]. This mechanism is handled automatically by
the NCV78763 logic without need of intervention from the
user, thus drastically reducing the MCU cycles and
embedded firmware and CPU cycles overhead that would be
otherwise required.
To avoid loss of data linked to the ADC main sequence,
one LED channel is served at a time also when interrupt
requests from both channels are received in a row and a full
sequence is required to go through to enable a new interrupt
VLEDx. In addition, possible conflicts are solved by using
a defined priority (channel pre−selection). Out of reset, the
default selection is given to channel “1”. Then an internal
flag keeps priority tracking, toggling at each time between
channels pre−selection. Therefore, up to two dimming
periods will be required to obtain a full measurement update
of the two channels. This not considered however a
limitation, as typical periods for dimming signals are in the
order of 1 ms period, thus allowing very fast failure
detection.
VBB sample & convert
VBOOST sample & convert
Update LED_SEL_DUR count;
When counter ripples, trigger
VLEDx interrupt for once
VTEMP sample & convert
VBOOST sample & convert
Figure 9. ADC Sample and Conversion Main
Sequence
www.onsemi.com
17
NCV78763
0.274 (V/dec) typical, inside the SPI register
VBOOST[7:0]. This measurement can be used by the MCU
for diagnostics and booster control loop monitoring. The
measurement is protected by parity (ODD) in bit
VBOOST[8].
A flow chart referring to the ADC interrupts is also
displayed (Figure 10).
Interrupts Enabled?
YES
VLEDx
Synchronization
signal?
NO
NO
Device Temperature ADC: VTEMP
By means of the VTEMP measurement, the MCU can
monitor the device junction temperature (TJ) over time. The
conversion formula is:
YES
T J + (VTEMP[7 : 0](dec) * 20)[° C]
VLEDx sample & convert
VTEMP[7:0] is the value read out directly from the
related 8bit−SPI register (please refer to the SPI map). The
value is also used internally by the device to for the
thermal warning and thermal shutdown functions. More
details on these two can be found in the dedicated sections
in this document. The parity protection (ODD) is found on
bit VTEMP[8].
Toggle channel “x” selection
In case of interrupt on
second channel do not serve
immediately and complete
the ADC sequence first
LED String Voltages ADC: VLEDx, VLEDxON
The voltage at the pins VLEDx (1, 2) is measured. Their
conversion ratio is 70/255 (V/dec) = 0.274 (V/dec) typical.
This information, found in registers VLEDxON[7:0] and
VLEDx[7:0], can be used by the MCU to infer about the
LED string status. For example, individual shorted LEDs, or
dedicated Open string and short to GND or short to battery
algorithms. As for the other ADC registers, the values are
protected by ODD parity, respectively in VLEDxON[8] and
VLEDx[8].
Please note that in the case of constant LEDCTRLx inputs
and no dimming (in other words dimming duty cycle equals
to 0% or 100%) the VLEDx interrupt is forced with a rate
equal to TVLEDx_INT_forced, given in the ADC general
section. This feature can be exploited by MCU embedded
algorithm diagnostics to read the LED channels voltage
even when in OFF state, before module outputs activation
(module startup pre−check).
Proceed to next step in the ADC sequence
Figure 10. ADC VLEDx Interrupt Sequence
All NCV78763 ADC registers data integrity is protected
by ODD parity on the bit 8 (that is to say the 9th bit if
counting from the LSbit named “0”). Please refer to the SPI
map section for further details.
Battery voltage ADC: VBB
The battery voltage is sampled making use of the device
supply VBB pin. The (8−bit) conversion ratio is
40/255 (V/dec) = 0.157 (V/dec) typical. The converted
value can be found in the SPI register VBB[7:0], with ODD
parity protection bit in VBB[8]. The external MCU can
make use of the measured VBB value to monitor the status
of the module supply, for instance for a power de−rating
algorithm.
Boost voltage ADC: VBOOST
This measure refers to the boost voltage at the VBOOST
pin, with an 8 bit conversion ratio of 70/255 (V/dec) =
www.onsemi.com
18
NCV78763
BOOSTER REGULATOR
the same time be lower, there will be no impact on the
thermal design.
On top of the cascaded configuration shown in the
previous figure, the booster can be operated in multi−phase
mode by combining more NCV78763 in the application.
More details about the multiphase mode can be found in the
dedicated section.
General
The NCV78763 features one common booster stage for
the two high−current integrated buck current regulators. In
addition, optional external buck regulators, belonging to
other NCV78x63 devices, can be cascaded to the same boost
voltage source as exemplified in the picture below.
Booster Regulation Principles
NCV78763 #dev1
Vboost
Boost regulator
The NCV78763 features a current−mode voltage
controller, which regulates the VBOOST line used by the buck
converters. The regulation loop principle is shown in the
following picture. The loop compares the reference voltage
(VBOOST_SETPOINT) with the actual measured voltage at the
VBOOST pin, thus generating an error signal which is treated
internally by the error trans−conductance amplifier (block
A1). This amplifier transforms the error voltage into current
by means of the trans−conductance gain Gm. The amplifier’s
output current is then fed into the external compensation
network impedance (A2), so that it originates a voltage at the
VCOMP pin, this last used as a reference by the current
control block (B).
The current controller regulates the duty cycle as a
consequence of the VCOMP reference, the sensed inductor
peak current via the external resistor RSENSE and the slope
compensation used. The power converter (block C)
represents the circuit formed by the boost converter
externals (inductor, capacitors, MOSFET and forward
diode). The load power (usually the LED power going via
the buck converters) is applied to the converter.
The controlled variable is the boost voltage, measured
directly at the device VBOOST pin with a unity gain
feedback (block F). The picture highlights as block G all the
elements contained inside the device. The regulation
parameters are flexibly set by a series of SPI commands
indicated in Tables 11 and 12. A detailed internal boost
controller block diagram is presented in the next section.
NCV78763 #dev1
2x Buck regulators
NCV78x63 #dev2
2xBuck regulators
NCV78x63 #devN
2xBuck regulators
Figure 11. Cascading Multiple NCV78x63 Buck
Channels on a Common Boost Voltage Source
The booster stage provides the required voltage source for
the LED string voltages out of the available battery voltage.
Moreover, it filters out the variations in the battery input
current in case of LED strings PWM dimming.
For nominal loads, the boost controller will regulate in
continuous mode of operation, thus maximizing the system
power efficiency at the same time having the lowest possible
input ripple current (with “continuous mode” it is meant that
the supply current does not go to zero while the load is
activated). Only in case of very low loads or low dimming
duty cycle values, discontinuous mode can occur: this means
the supply current can swing from zero when the load is off,
to the required peak value when the load is on, while keeping
the required input average current through the cycle. In such
situations, the total efficiency ratio may be lower than the
theoretical optimal. However, as also the total losses will at
Vboost Target Vboost Target
Reference
error
+
VREF
e(t)
Error Amp
(A1)
Compensation
Network
(A2)
Current
control
voltage
VCOMP(t)
Current
Controller
(B)
Boost PWM
duty cycle
D(t)
Power Converter
(C)
Load
−
Compensator (A)
Current sense voltage
VSENSE(t)
Feedback voltage
VF(t) = Vboost(t)
Unity gain
Feedback network
(F)
Rsense
(E)
Boost inductor current
IL(t)
Boost voltage
Vboost(t)
NCV78763 Boost Controller Block (G)
Figure 12. NCV78763 Boost Control Loop − Principle Block Diagram
www.onsemi.com
19
Boost voltage
Vboost(t)
NCV78763
Boost Controller Detailed Internal Block Diagram
The blocks referring to the principle block diagram are
also indicated. In addition, the protection specific blocks can
be found (see dedicated sections for details).
A detailed NCV78763 boost controller block diagram is
provided in this section. The main signals involved are
indicated, with a particular highlight on the SPI
programmable parameters.
Overvoltage shutdown protection
VBOOST_SETPOINT
Reactivation from overvoltage protection
VBB
VBOOST
VBOOST_VSETPOINT<6:0>
Current
limiter protection
PWM control
BOOSTER
BOOST_OV_SD[2:0]
OV
BOOST_OV_REACT[1:0]
S
Ref.
IMAX
R
BOOST_VLIMTH[1:0]
RA
BOOST_SLPCTRL[1:0]
IBSTSENS+
Slope
comp.
&
COMP
_VSF
SCLK
BOOST_SCKL[1:0]
BOOST_VLIMTH[1]
IREG
BOOST_SLPCTRL[1]
R_BST_SENS
COMP_CLH
BOOST_VLIMTH[1]
EA
1/COMP_DIV
IBSTSENS−
COMP_CLL
Current control (B)
VGATE
control
DIG. control
VBOOST_VGATE_THR
COMP
(H)
Error Amp (A1)
VBOOST_TOFF_SET[1:0]
VGATE
VGATE_LOW
TOFF
generator
BOOST_SYN
Peak
gen.
VBOOST_TON_SET[1:0]
TON
generator
BOOST_TOFF
S
BOOST_SYN_PK
R
rst
GND
BOOST_TON
GATE
Compensation
Network (A2)
Figure 13. NCV78763 Boost Controller Internal Detailed Block Diagram
Booster Regulator Setpoint (VBOOST_SETPOINT)
same time, the boost overvoltage flag in the status register
will be set (BOOST_OV = 1), together with the
BOOST_STATUS flag equals to zero. The PWM runs again
as from the moment the VBOOST will fall below the
reactivation
hysteresis
defined
by
the
BOOST_OV_REACT[1:0] SPI parameter. Therefore,
depending on the voltage drop and the PWM frequency, it
might be that more than one cycle will be skipped. A
graphical interpretation of the protection levels is given in
the figure below, followed by a summary table (Table 20).
The booster voltage VBOOST is regulated around the target
programmable
by
the
7−bit
SPI
setting
VBOOST_SETPOINT[6:0], ranging from a minimum of
11 V to a maximum of typical 64.1 V (please refer to
Table 11 for details). Due to the step−up only characteristic
of any boost converter, the boost voltage cannot obviously
be lower than the supply battery voltage provided. Therefore
a target of 11 V would be used only for systems that require
the activation of the booster in case of battery drops below
the nominal level.
At power−up, the booster is disabled and the setpoint is
per default the minimum (all zeroes).
[V]
Booster Overvoltage Shutdown Protection
Boost overvoltage shutdown
An integrated comparator monitors VBOOST in order to
protect the external booster components and the led driver
device from overvoltage. When the voltage rises above the
threshold defined by the sum of the VBOOST_SETPOINT
(VBOOST_SETPOINT[6:0]) and the overvoltage
shutdown value (BOOST_OV_SD[2:0]), the MOSFET gate
is switched−off at least for the current PWM cycle and at the
Boost overvoltage reactivation
V BOOST
SETPOINT
Figure 14. Booster Voltage Protection Levels with
Respect to the Setpoint
www.onsemi.com
20
NCV78763
Table 20. NCV78763 BOOST CONTROLLER OVERVOLTAGE PROTECTION LEVELS AND RELATED SPI
DIAGNOSTICS
SPI FLAGS
ID
Description
PWM VGATE Condition
BOOST_STATUS
BOOST_OV
A
VBOOST < VBOOST_SETPOINT
Normal (not disabled)
1
0
B
VBOOST > VBOOST_SETPOINT + BOOST_OV_SD
Disabled until case “C”
0
1
(latched)
C
VBOOST < VBOOST_SETPOINT + BOOST_OV_SD
Re−enables the PWM,
normal mode resumed if
from case “B”
1
1
BOOST_OV_REACT
protection is active PWM cycle−by−cycle and switches off
the MOSFET GATE as VSENSE reaches its maximum
threshold VSENSE_MAX defined by the BST_VLIMTH[1:0]
register (see IMAX comparator in Figure 13 and Table 12
for more details). Therefore, the maximum allowed peak
current will be defined by the ratio IPEAK_MAX =
VSENSE_MAX / RSENSE. The maximum current must be set
in order to allow the total desired booster power for the
lowest battery voltage. Warning: setting the current limit too
low may generate unwanted system behavior as
uncontrolled de−rating of the LED light due to insufficient
power.
After POR, the BOOST_OV flag may be set at first read
out. Please note that the booster overvoltage detection is also
active when Booster is OFF (booster disabled by SPI related
bit). Please note that the tolerances of the booster setpoint
level and the booster overvoltage and reactivation are given
in Table 11.
Booster Current Regulation Loop
The peak−current level of the booster is set by the voltage
of the compensation pin COMP (output of the
trans−conductance error amplifier, “block B” of Figure 13).
This reference voltage is fed to the current comparator
through a divider by 7 and compared to the voltage VSENSE
on the external sense resistor RSENSE, connected to the pins
IBSTSENSE+ and IBSTSENSE−. The sense voltage is
created by the booster inductor coil current when the
MOSFET is switched on and is summed up to an additional
offset of +0.5 V (see COMP_VSF in Table 11) and on top of
that a slope compensation ramp voltage is added. The slope
compensation is programmable by SPI via the setting
(BOOST_SLP_CTRL[1:0]) and can also be disabled. Due
to the offset, current can start to flow in the circuit as VCOMP
> COMP_VSF.
Booster PWM Frequency and Disable
The NCV78763 allows a flexible set of the booster PWM
frequency. Two modes are available: internal generation or
external drive, selectable by SPI bit setting
BOOST_SRC[0]. In either case, the booster must be enabled
via the dedicated SPI bit to allow PWM generation
(BOOST_EN = 1). When BOOST_EN = 0, the peripheral is
off and the GATE drive is disabled. Please note that the error
amplifier is not shut off automatically and to avoid voltage
generation on the VCOMP pin the Gm gain must be put to
zero as well.
Offset plus slope compensation
ramp
VSENSE = IL x RSENSE
IL
RSENSE
GND
+
to IBSTsense+pin
+
Booster PWM Internal Generation
This mode activated by BOOST_SRC = 0, creates the
PWM frequency starting from the internal clock FOSC8M.
A fine selection of frequencies is enabled by the register
BOOST_FREQ[4:0], ranging from typical 210 kHz to
typical 1 MHz (Table 11). The frequency generation is
disabled by selecting the value “zero”; this is also the POR
default value.
Current peak reached trigger
(duty cycle regulation)
+
−
+
1/7
to IBSTsense−pin
(latched, if read in
this condition it
will go back to
“0”)
VCOMP
+
Figure 15. Booster Peak Current Regulator Involved
in Current Control Loop
Booster PWM External Generation
When BOOST_SRC = 1, the booster PWM external
generation mode is selected and the frequency is taken
directly from the BOOST_SYNC device pin. There is no
actual limitation in the resolution, apart from the system
clock for the sampling and a debounce of two clock cycles
on the signal edges. The gate PWM is synchronized with
either the rising or falling edge of the external signal
depending on the BOOST_SRCINV bit value. The default
POR value is “0” and corresponds to synchronization to the
The maximum booster peak−current is limited by a
dedicated comparator, presented in the next section.
Booster Current Limitation Protection
On top of the normal current regulation loop comparator,
an additional comparator clamps the maximum physical
current that can flow in the booster input circuit while the
MOSFET is driven. The aim is to protect all the external
components involved (boost inductor from saturation, boost
diode and boost MOSFET from overcurrent, etc…). The
www.onsemi.com
21
NCV78763
rising flank. BOOST_SRCINV equals “1” selects falling
edge synchronization.
www.onsemi.com
22
NCV78763
BSTSYNC pin
1
DEBOUNCE
BOOST_SYN
(PWM synch)
MUX
0
0
BOOST_CLK_GENERATOR
MUX
1
BOOST_SRC
BOOST SRCINV
BOOST_EN
Figure 16. NCV78763 Booster Frequency Generation Block
Booster PWM Min TOFF and Min TON protection
protection mechanisms around are not taken into account. A
type “2” network is taken into account at the VCOMP pin.
The equivalent circuit is shown below:
As additional protection, the PWM duty cycle is
constrained between a minimum and a maximum, defined
per means of two parameters available in the device. The
PWM minimum on−time is programmable via
BOOST_TONMIN[1:0]: its purpose is to guarantee a
minimum activation interval for the booster MOSFET
GATE, to insure full drive of the component and avoiding
switching in the linear region. Please note that this does not
imply that the PWM is always running even when not
required by the control loop, but means that whenever the
MOSFET should be activated, then its on time would be at
least the one specified. At the contrary When no duty cycle
at all is required, then it will be zero.
The PWM minimum off−time is set via the parameter
BOOST_TOFFMIN[1:0]: this parameter is limiting the
maximum duty cycle that can be used in the regulation loop
for a defined period TPWM:
Duty MAX +
VCOMP(t)
R1
Figure 17. Booster Compensator Circuit with Type
“2” Network
In the Figure, e(t) represents the control error, equals to the
difference VBOOST_SETPOINT(t) − VBOOST(t). “Gm” is the
trans−conductance error amplifier gain, while “ROUT” is the
amplifier internal output resistance. The values of these two
parameters can be found in Table 11 in this datasheet.
By solving the circuit in Laplace domain the following
error to VCOMP transfer function is obtained:
T PWM
The main aim of a maximum duty cycle is preventing
MOSFET shoot−through in cases the (transient) duty cycle
would get too close to 100% of the MOSFET real switch−off
characteristics. In addition, as a secondary effect, a limit on
the duty cycle may also be exploited to minimize the inrush
current when the load is activated.
Warning: a wrong setting of the duty cycle constraints may
result in unwanted system behavior. In particular, a too big
TOFFMIN may prevent the system to regulate the VBOOST
with low battery voltages (VBAT). This can be explained by
the simplified formula for booster steady state continuous
mode:
V BOOST ^
ǒ1 * DutyǓ
à Duty ^
CP
RP
C1
ǒTPWM * TOFFMINǓ
V BAT
ROUT
Gm e(t)
H COMP(s) +
V COMP(s)
e(s)
+ G COMP
ǒ1 ) t 1sǓ
ǒ1 ) ǒtP ) t1PǓs ) ǒt1 ) tPǓs2Ǔ
The explanation of the parameters stated in the equation
above follows:
G COMP + G mR T
RP
RT +
R P ) R OUT
t 1 + R 1C 1
t P + R PC P
V BOOST * V BAT
V BOOST
So in order to reach a desired VBOOST for a defined supply
voltage, a certain duty cycle must be guaranteed.
t 1P + ǒR 1 ) R TǓC 1
Booster Compensator Model
This transfer function model can be used for closed loop
stability calculations.
A linear model of the booster controller compensator
(block “A” Figure 13) is provided in this section. The
www.onsemi.com
23
NCV78763
Booster PWM skip cycles
mode. For hardware point of view, it is assumed that in
multiphase mode (N boosters), each stage has the same
external components. In particular, the values of the sense
resistors have to match as much as possible to have a
balanced current sharing. The following features have to be
considered as well:
1. The compensation pin (COMP) of all boosters is
connected together to the same compensation
network, to equalize the power distribution of each
booster. For the best noise rejection, the
compensation network area has to be surrounded
by the GND plane. Please refer to the PCB Layout
recommendations section for more general
advices.
2. To synchronize the MOSFET gate PWM clock and
needed phase shifts, the boosters must use the
external clock generation (BSTSYNC), generated
by the board MCU or external logic, according to
the user−defined control strategy. The generic
number of lines needed is “N” equivalent to the
number of stages. Please note that in case of a
bi−phase system (N = 2) and an electrical phase
shift of 180°, it is possible to use only one external
clock line, exploiting the integrated NCV78763
features: the slave device shall have
BOOST_SRCINV bit to “1” (clock polarity
internal inversion active), whereas the master
device will keep the BOOST_SRCINV bit to “0”
(= no inversion, default).
3. Only the master booster error amplifier OTA must
be active, while the other (slave) boosters must
have all their own OTA block disabled
(BOOST_OTA_GAIN[1:0] = ‘00’). For each of
the devices in the chain, the register
BOOST_MULTI_MD[1:0] must be kept to zero,
default (‘00’)
4. In order to let the slave device(s) detect locally the
boost over-voltage condition thus disabling the
correspondent phase, the slave(s) must have the
same (or higher) booster overvoltage shutdown
level of the master device (see also section
“Booster overvoltage shutdown protection” for
more details on the protection mechanism and
threshold). The MCU shall monitor the
BOOST_OV flags to insure that all devices are
properly operating in the application.
In case of light booster load, it may be useful to reduce the
number of effective PWM cycles in order to get a decrease
of the input current inrush bursts and a less oscillating boost
voltage. This can be obtained by using the “skip cycles”
feature, programmable by SPI via BOOST_SKCL[1:0] (see
Table 11 and SPI map). BOOST_SKCL[1:0] = ‘00’ means
skip cycle disabled.
The selection defines the VCOMP voltage threshold
below which the PWM is stopped, thus avoiding VBOOST
oscillations in a larger voltage window.
Booster Monophase or Multiphase Mode Principles
The NCV78763 booster can be operated in two main
modes: single phase (N = 1), or “multiphase” (N ≥ 2).
In single phase mode, a unique NCV78763 booster is
used, in the configuration shown in the standard application
diagram (Figure 4).
In multiphase mode, more NCV78763 boosters can be
connected together to the same VBOOST node, sharing the
boost capacitor block. Multiphase mode shows to be a cost
effective solution in case of mid to high power systems,
where bigger external BOM components would be required
to bear the total power in one phase only with the same
performances and total board size. In particular, the boost
inductor could become a critical item for very high power
levels, to guarantee the required minimum saturation current
and RMS heating current.
Another advantage is the benefit from EMC point of view,
due to the reduction in ripple current per phase and ripple
voltage on the module input capacitor and boost capacitor.
The picture below shows the (very) ideal case of 50% duty
cycle, the ripple of the total module current (ILmp_sum =
IL1mp + IL2mp) is reduced to zero. The equivalent single
phase current (ILsp) is provided as a graphical comparison.
I Lsp
I Lmp_sum
I L1mp I L2mp
t
Figure 18. Booster Single Phase vs. Multiphase
Example (N = 2)
Booster Multiphase Diagram and Programming
This section describes the steps both from hardware and
SPI programming point of view to operate in multiphase
www.onsemi.com
24
NCV78763
L BOOST
FET BOOST
D BOOST
C BOOST/ 3
C M3V
VBB
VBOOST
IBSTSENSE−
IBSTSENSE+
VGATE
C VBB
VBOOSTM3V
R BOOST_SENSE
VBOOSTBCK
C BOOST_IN
BSTSYNC
NCV78763 #2
COMP
BAT
L BOOST
FET BOOST
D BOOST
C BOOST_IN
C BOOST/ 3
C M3V
VBB
VBOOSTM3V
IBSTSENSE−
IBSTSENSE+
VGATE
C VBB
C VDRIVE
VBOOST
R BOOST_SENSE
VBOOSTBCK
V
(After rev. pol. prot.)
IBCK1SENSE+
R BUCK_SENSE_01
IBCK1SENSE−
LED−string 1
VINBCK1
VDRIVE
L BUCK_01
C VDD
VDD
LBCKSW1
ON Semiconductor
C BUCK_01
LED driver
VLED1
Front Lighting
BSTSYNC_01
IBCK2SENSE+
BSTSYNC
SPI_MASTER_VDD
MCU
LED−string 2
VINBCK2
(Booster MASTER)
COMP
C C1
R BUCK_SENSE_02
IBCK2SENSE−
NCV78763 #1
CP
L BUCK_02
R C1
LBCKSW2
CTRL1
LEDCTRL1
CTRL2
LEDCTRL2
C BUCK_02
VLED2
SPI Master In Slave Output (MISO)
SDO
SPI Master Out Slave Input (MOSI)
SDI
SPI_MASTER_CLK
SCLK
SPI_MASTER_CSB
SCSB
TST
TST2
EP
GNDP
GND
PWR GND
Sig GND
Figure 19. Booster Bi−phase Application Diagram (N = 2)
LBOOST
FET BOOST
D BOOST
C BOOST_IN
R BOOST_SENSE
VBB
BSTSYNC
COMP
VBOOST
VBOOSTBCK
VBOOST
VBOOSTBCK
VBOOSTM3V
IBSTSENSE−
IBSTSENSE+
VBB
VBOOSTM3V
VGATE
C VBB
VGATE
C M3V
C M3V
IBSTSENSE−
R BOOST_SENSE
C VBB
C BOOST
/3
C BOOST
/3
IBSTSENSE+
C BOOST_IN
D BOOST
FET BOOST
LBOOST
NCV78763 #3
BSTSYNC
NCV78763 #2
COMP
V BAT
LBOOST
D BOOST
FET BOOST
C BOOST
/3
C M3V
VBOOST
VBB
IBSTSENSE+
VGATE
C VBB
C VDRIVE
IBSTSENSE−
R BOOST_SENSE
VBOOSTBCK
C BOOST_IN
VBOOSTM3V
(After rev. pol. prot.)
IBCK1SENSE+
IBCK1SENSE−
R BUCK_SENSE_01
LED−string 1
VINBCK1
VDRIVE
LBUCK_01
C VDD
VDD
LBCKSW1
ON Semiconductor
C BUCK_01
LED driver
VLED1
BSTSYNC_03
Front Lighting
BSTSYNC_02
IBCK2SENSE+
BSTSYNC
BSTSYNC_01
IBCK2SENSE−
COMP
MCU
C C1
LED−string 2
VINBCK2
NCV78763 #1
CP
SPI_MASTER_VDD
R BUCK_SENSE_02
(Booster MASTER)
LBUCK_02
R C1
LBCKSW2
CTRL1
LEDCTRL1
CTRL2
LEDCTRL2
C BUCK_02
VLED2
SPI Master In Slave Output (MISO)
SDO
SPI Master Out Slave Input (MOSI)
SDI
SPI_MASTER_CLK
SCLK
SPI_MASTER_CSB
SCSB
TST
TST2
GND
GNDP
EP
PWR GND
Sig GND
Figure 20. Booster Three−Phase Application Diagram (N = 3)
Booster Enable Control
happen that despite the user wanted activation, the booster
is stopped by the device in two main cases:
a. Whenever the boost overvoltage detection triggers
in the control loop. The booster is automatically
activated when the voltage falls below the
hysteresis (Figure 14).
The NCV78763 booster can be enabled/disabled directly
by SPI via the bit BOOST_EN[0]. The enable signal is the
transition from “0” to “1”; the disable function is vice−versa.
The status of the physical activation is contained in the flag
BOOST_STATUS: whenever the booster is running, the
value of the flag is one, otherwise zero. It might in fact
www.onsemi.com
25
NCV78763
b. When a voltage setpoint level plus overvoltage
protection higher than the maximum allowed by
the max ratings is entered, to avoid electrical
damage. In other notations, the following relation
must be respected to avoid disabling the booster
by wrong SPI setting:
{65 V − (127 − BOOST_VSETPOINT[6:0]) x
0.4 V + BOOST_OV_SD [V]} >
{67.8 V + (1 − 2 x VBOOST_OFF_COMP[3]) x
0.4 V x VBOOST_OFF_COMP[2:0]}
The value in register VBOOST_OFF_COMP[3:0] Is
stored by factoring trimming by ON Semiconductor,
individually per each device, to achieve maximum accuracy
with respect to the maximum voltage setting allowed.
The parameter IBUCK_peak is programmable through the
device by means of the internal comparator threshold
(VTHR, Table XX) over the external sense resistor RBUCK:
I BUCKpeak +
T OFF
DI BUCKpkpk +
ǒVLED ) VDIODEǓ
L BUCK
^
T OFF
V LED
L BUCK
+
T OFF_VLED_i
L BUCK
In the formula above, TOFF represents the buck switch off
time, VLED is the LED voltage feedback sensed at the
NCV78763 VLEDX pin and LBUCK is the buck inductance
value. The parameter TOFF_VLED_i is programmable by SPI
(BUCKx_TOFFVLED[3:0]), with values related to Table 15.
In order to achieve a constant ripple current value, the device
varies the TOFF time inversely proportional to the VLED
sensed at the device pin, according to the selected factor
TOFF_VLED_i. As a consequence to the constant ripple
control and variable off time, the buck switching frequency
is dependent on the boost voltage and LED voltage in the
following way:
General
The NCV78763 contains two high−current integrated
buck current regulators, which are the sources for the LED
strings. The bucks can be powered by the device own boost
regulator, or by a booster regulator linked to another
NCV78x63 device. Each buck controls the individual
inductor peak current (IBUCK_peak) and incorporates a
constant ripple (DIBUCK_pkpk) control circuit to ensure also
stable average current through the LED string,
independently from the string voltage. The buck average
current is in fact described by the formula:
f BUCK +
DI BUCKpkpk
2
This is graphically exemplified by Figure 21:
Buck
current
R BUCK
The formula that defines the total ripple current over the
buck inductor is also hereby reported:
BUCK REGULATOR
I BUCKAVG + I BUCKpeak *
V THR
+
Buck peak current
ǒVBOOST * VLEDǓ
V BOOST
1
T OFF
ǒVBOOST * VLEDǓ
V LED
V BOOST
T OFF_VLED_i
The LED average current in time (DC) is equal to the buck
time average current. Therefore, to achieve a given LED
current target, it is sufficient to know the buck peak current
and the buck current ripple. A rule of thumb is to count a
minimum of 50% ripple reduction by means of the capacitor
CBUCK and this is normally obtained with a low cost ceramic
component ranging from 100 nF to 470 nF (such values are
typically used at connector sides anyway, so this is included
in a standard BOM). The following figure reports a typical
example waveform:
Buck average current
Buck current ripple
= TOFF_V_BUCK/LBUCK
TOFF
time
Figure 21. Buck Regulator Controlled Average
Current
Figure 22. LED Current AC Components Filtered Out by the Output Impedance (oscilloscope snapshot)
www.onsemi.com
26
NCV78763
The use of CBUCK is a cost effective way to improve EMC
performances without the need to increase the value of
LBUCK, which would be certainly a far more expensive
solution.
C fil
VBSTM3
The complete buck circuit diagram follows:
BUCKx_OFF_COMP
VBOOST
IBCKxSENSE -
DC_DC
R_sense
I-sense
IBCKxSENSE +
VINBCKx
POWER STAGE
Driver
IBUCK
LBCKSWx
Over current
detect
LED string
L
C
D
ILED
VLEDx
Digital
Control
Constant Ripple
Control
Figure 23. Buck Regulator Circuit Diagram
Different buck channels can be paralleled at the module
output (after the buck inductors) for higher current
capability on a unique channel, summing up together the
individual DC currents. Please note that for each channel,
the maximum buck allowed peak current is defined by the
buck overcurrent detection circuit, see dedicated section for
details.
In case of a non−used ”x” channel, it is suggested to short
circuit together the pins IBCKxSENSE+, IBCKxSENSE−,
VINBCKx and VBOOST. The pins LBCKSWx and VLEDx
can be left open.
cancellation is very effective in case of high precision levels
for low currents.
Buck Offset Compensation
Being a current regulator, the NCV78763 buck is by
nature preventing overcurrent in all normal situations.
However, in order to protect the system from overcurrent
even in case of failures, two main mechanisms are available:
1. Internal sensing over the buck switch: when the
peak current rises above the maximum limit
(situated above 1.9 A, see Table 14), an internal
counter starts to increment at each period, until the
count written in
BUCKx_OC_OCCMP_COUNT[2:0]+1 is
attained. The count is reset if the buck channel is
disabled and also at each dimming cycle. From the
2 x I−sense comparator offset
Fixed peak level
Toff = constant
Toff = constant
Typical LED current
Toff = constant
Figure 24. Buck Offset Compensation Feature
Buck Overcurrent Protection
The NCV78763 buck features a peak current offset
compensation that can be enabled by the SPI parameter
BUCKx_OFF_CMP_EN[0]. When this bit is “1”, the offset
changes polarity each buck period, so that the average effect
over time on the peak current is minimized (ideally zero). As
a consequence of the polarity change, the peak current is
toggling between two threshold values, one high value and
one low, as shown in the picture below. The related
sub−harmonic frequency (half the buck switching
frequency) will appear in the spectrum. This has to be taken
into account from EMC point of view. The use of the offset
www.onsemi.com
27
NCV78763
External Dimming
moment the count is reached onwards, the buck is
kept continuously off, until the SPI error flag
OCLEDx is read. After reading the flag, the buck
channel “x” is automatically re−enabled and will
try to regulate the current again. The failure related
to this protection mechanism is a short circuited
sense resistor on the “x” channel. In these
conditions in fact the voltage drop over the sensing
element (short circuit) will be very low even in
case of high currents.
2. Sensed voltage “I−sense” above the threshold:
when the voltage produced over the sense resistor
exceeds the desired threshold, another protection
counter increases at each switching period, until
the count defined by the SPI setting
BUCKx_OC_ISENSCMP_COUNT[6:0]+1 is
reached. As for the previous protection, the count
is reset if the buck channel is disabled and also at
each dimming cycle. The failure linked to this
protection mechanism is a short circuit at the LED
channel output and at the same time, a wrong
feedback voltage at the VLEDx pin (or higher than
the short circuit detection voltage typical 1.8 V,
VLED_LMT in Table 15).
The two independent control inputs LEDCTRLx handle
the dimming signals for the related channel “x”. This mode
is selected independently for buck channel ”1” by
DIM_SRC[0] = 1 and for channel 2 by DIM_SRC[1] = 1. In
external dimming, the buck activation is transparently
linked to the logic status of the LEDCTRLx pins. The only
difference is the controlled phase shift of typical 4 ms
(Table 16) that allows synchronized measurements of the
VLEDx pins via the ADC (see dedicated section for more
details). As the phase shift is applied both to rising edges and
falling edges, with a very limited jitter, the PWM duty cycle
is not affected. Apart from the phase shift and the system
clock OSC8M, there is no limitation to the PWM duty cycle
values or resolutions at the bucks, which is a copy of the
reference provided at the inputs.
Internal Dimming
This mode is selected independently for buck channel ”1”
by DIM_SRC[0] = 0 and for channel “2” by DIM_SRC[1]
= 0.
The register saturation value is per choice 1000 decimal,
corresponding to 100% (register values between 1000 and
1023 will all provide a 100% duty cycle). Each least
significant bit (lsb) change corresponds to a 0.1% duty cycle
change.
The dimming PWM frequency is common between the
channels and is programmable via the SPI parameter
PWM_FREQ[1:0], as displayed in the table below. All
frequencies are chosen sufficiently high to avoid the beads
effect in the application. Please also note that the higher the
frequency, the lower the voltage drop on the booster output
due to the lower load power step.
DIMMING
General
The NCV78763 supports both analog and digital
dimming (or so called PWM dimming). Analog dimming is
performed by controlling the LED amplitude current during
operation. This can be done by means of changing the peak
current level and/or the Toff_VLED_i constants by SPI
commands (see Buck Regulator section).
In this section, we only describe PWM dimming as this is
the preferred method to maintain the desired LED color
temperature for a given current rating. In PWM dimming,
the LED current waveform frequency is constant and the
duty cycle is set according to the required light intensity. In
order to avoid the beats effect, the dimming frequency
should be set at “high enough” values, typically above
300 Hz.
The device handles two distinct PWM dimming modes:
external and internal, depending on the SPI parameter
DIM_SRC[1:0].
Table 21. INTERNAL PWM DIMMING
PROGRAMMABLE FREQUENCIES
PWM_FREQ[1:0]
PWM Frequency [Hz]
00
500
01
1000
10
2000
11
4000
SPI INTERFACE
General
ZOOM: buck inductor switching current
The serial peripheral interface (SPI) allows the external
microcontroller (MCU) to communicate with the device to
read−out status information and to program operating
parameters after power−up. The NCV78763 SPI transfer
packet size is 16 bits. During an SPI transfer, the data is
simultaneously transmitted (shifted out serially) and
received (shifted in serially). A serial clock line (CLK)
synchronizes shifting and sampling of the information on
DIM_DUTY = DIM_TON / DIM_T = DIM_T ON × F
DIM_T ON
DIM_T
Figure 25. Buck Current Digital or PWM Dimming
www.onsemi.com
28
NCV78763
interfere with SPI bus activities. Since the NCV78763
always clocks data out on the falling edge and samples data
in on rising edge of clock, the MCU SPI port must be
configured to match this operation.
The SPI CLK idles low between transferred frames. The
diagram below is both a master and a slave timing diagram
since CLK, SDO and SDI pins are directly connected
between the Master and the Slave.
the two serial data lines: SDO and SDI. The SDO signal is
the output from the Slave (LED Driver), and the SDI signal
is the output from the Master.
A slave or chip select line (CSB) allows individual
selection of a slave SPI device in a time multiplexed
multiple−slave system.
The CSB line is active low. If an NCV78763 is not
selected, SDO is in high impedance state and it does not
Figure 26. NCV78763 SPI Transfer Format
means of both star connection (one individual CSB per
Slave, while SDI, SDO, CLK are common) or by means of
daisy chain (common CSB signal and clock, while the data
lines are cascaded as in the figure). An SPI star connection
requires a bus = (3 + N) total lines, where N is the number
of Slaves used, the SPI frame length is 16 bits per
communication. Regarding the SPI daisy chain connection,
the bus width is always four lines independently on the
number of slaves. However, the SPI transfer frame length
will be a multiple of the base frame length so N x 16 bits per
communication: the data will be interpreted and read in by
the devices at the moment the CSB rises.
Note: The data transfer from the shift register into the locally
used registers, interpretation of the data is only done at the
rising edge of CSB.
The Data that is send over to the shift register to be
transmitted to the external MCU is sampled at the falling
edge of CSB, just at the moment the transmission starts.
The implemented SPI block allows interfacing with
standard MCUs from several manufacturers. When
interfaced, the NCV78763 acts always as a Slave and it
cannot initiate any transmission. The MCU is instead the
master, able to send read or write commands. The
NCV78763 SPI allows connection to multiple slaves by
NCV78x63 dev#1
(SPI Slave)
MCU
(SPI Master)
MOSI
MISO
SDO1
NCV78x63 dev#1
(SPI Slave)
CSB1
SDI2
MCU
(SPI Master)
CSB2
CSBN
NCV78x63 dev#2
(SPI Slave)
SDO2
NCV78x63 dev#N
(SPI Slave)
SDON
SDIN
NCV78x63 dev#2
(SPI Slave)
NCV78x63 dev#N
(SPI Slave)
Figure 27. SPI Star vs. Daisy Chain Connection
A diagram showing the data transfer between devices in
daisy chain connection is given on the right: CMDx
represents the 16−bit command frame on the data input line
transmitted by the Master, shifting via the chips’ shift
registers through the daisy chain. The chips interpret the
command once the chip select line rises.
Figure 28. SPI Daisy Chain Data Shift Between
Slaves. The symbol ‘x’ represents the previous
content of the SPI shift register buffer.
www.onsemi.com
29
NCV78763
• Bits [9:0]: 10−bit data to write. The control register
The NCV78763 default power up communication mode
is “star”. In order to enable daisy chain mode, a multiple of
16 bits clock cycles must be sent to the devices, while the
SDI line is left to zero. Note: to come back to star mode the
NOP register (address 0x0000) must be written with all
ones, with the proper data parity bit and parity framing bit:
see SPI protocol for details about parity and write operation.
field is in fact 10 bits wide. See SPI Map for details.
Still referring to the picture, at the same time of the
exchange, the device replies on the SDO line either with:
• If the previous command was a write and no SPI error
had occurred, a copy of the address and data written; in
case of previous SPI error, or at power−on−reset (POR),
the response will be frame containing with only the msb
equals to one;
• If the precedent command was a read, the response
frame summarizes the address used and an overall
diagnostic check (copy of the main detected errors, see
diagnostic section for details).
The parity bit plays a fundamental role in each
communication frame; would the parity be wrong, the
NCV78763 will not store the data to the designated address
and the SPIERR flag will be set.
The frame protocol for the read operation is:
SPI Protocol: Write / Read
Two main actions are performed by the NCV78763 SPI:
write to control register and read from register (status or
control). Control registers contain the parameters for the
device operations to flexibly adapt to the application system
requirements (control loop settings, voltage settings,
dimming modes, etc…), while status registers bear the
system information interpreted by the NCV78763 logic,
such as diagnostics flags and ADC values. Each
communication frame is protected by parity (ODD) for a
more robust data transfer.
For the rest, the general transfer rules are:
• Commands and data are shifted; MSB first, LSB last.
• Each output data bit from the device into the SDO line
are shifted out on the falling (detected) edge of the
CLK signal;
• Each input bit on the SDI line is sampled in on the
rising (detected) edge of CLK;
• Data transfer out from SDO starts with the (detected)
falling edge of CSB; prior to that, the SDO open−drain
transistor is High−Z (the voltage will be the one
provided through the external pull−up);
• All SPI timing rules are defined by Table 19.
The frame protocol for the write operation is hereby
provided:
Low
DOUT
Low
SCLK
P =
S
P
I
E
R
R
C
AAAADDDDDDDDDD
M
3 2 1 0 9 8 7 6 5 4 3 2 1 0
D
S
P
I
E
R
R
C
AAAAA
M
P1 1 1
4 3 2 1 0
D
B
U
C
K
O
C
L
E
D
2
L
E
D
1
T
S
D
T
W
LED1 = OPENLED1 or SHORTLED1
BUCKOC = OCLED1 or OCLED2
C
DIN M A A A A A P
4 3 2 1 0
D
DOUT
Low
SCLK
P =
S B
P U L L T
I C E E
T
E K D D S W
R O 2 1 D
R C
−> immediate value of STATUS BITS; dedicated
SPI READ Command of STATUS Register has
to be performed to clear the value of
Low
DDDDDDDDDD
9 8 7 6 5 4 3 2 1 0
read-by-clear STATUS bits
Low
Data at [4:0] shall be
returned
HIGH−Z
Low
n0t (A4 xor cmd xor A3 xor A2 xor A1 xor A0)
Figure 30. SPI Read Frame
Taking the figure above into account, the read frame
coming from the master (into the chip SDI) is formed by:
• Bit [15] (msb): CMD bit = 0;
• Bits [14:10]: 5−bits READ ADDRESS field;
• Bit [9]: read frame parity bit. It is ODD, formed by the
negated XOR of all the other bits in the frame;
• Bits [8:0]: 9−bits zeroes field.
The device answers immediately via the SDO in the same
read frame with the register’s content thus achieving the
lowest communication latency.
Note: all status registers that are ”cleared by read” (latched
information) require a proper parity bit in order to execute
the clearing out. Please be aware that the device will still
send the information even if the parity is wrong. The MCU
can still take action based on the value of the SPIERR bit.
The SPIERR state can be reset only by reading the related
status register. See SPI map and the next section for more
details.
Low
C
DIN M A A A A P D D D D D D D D D D
3 2 1 0
9 8 7 6 5 4 3 2 1 0
Low D
High
LED2 = OPENLED2 or SHORTLED2
Write; CMD = ‘1’
High
CSB
Read: CMD = ‘0’
CSB
Previous SPI WRITE
command resp. “SPIERR
+0x000hex” (after POR)
or in case of SPI
Command
HIGH−Z PARITY/FRAMING Error
Previous SPI READ
command & L763
bits resp. “SPIERR +
0x000hex” after POR or in
case of SPI Command
Low
PARITY/FRAMING Error
Low
not(CMD xor A3 xor A2 xor A1 xor A0 xor D9 xor D8 xor D7 xor
D6 xor D5 xor D4 xor D3 xor D2 xor D1 xor D0)
Figure 29. SPI Write Frame
Referring to the previous picture, the write frame coming
from the master (into the chip SDI) is composed as follows:
• Bit [15] (msb): CMD bit = 1;
• Bits [14:11]: 4−bits WRITE ADDRESS field;
• Bit [10]: frame parity bit. It is ODD, formed by the
negated XOR of all the other bits in the frame;
www.onsemi.com
30
NCV78763
SPI Protocol: Framing and Parity Error
SPI ADDRESS MAP
SPI communication framing error is detected by the
NCV78763 in the following situations:
• Not an integer multiple of 16 CLK pulses are received
during the active−low CSB signal;
• LSB bits (8..0) of a read command are not all zero;
• SPI parity errors, either on write or read operation.
Once an SPI error occurs, the SPI ERR flag can be reset
only by reading the status register in which it is contained
(using in the read frame the right communication parity bit).
Starting from the left column, the table shows the address
in (byte hexadecimal format), the access type (Read = R /
Write = W) and the bits’ indexes.
Details for the single registers are provided in the
following section.
Table 22. NCV78763 SPI ADDRESS MAP
ADDR
R/W
0x00
NA
bit9
bit8
bit7
bit6
bit5
bit4
bit3
bit2
bit1
bit0
0x01
R/W
BOOST_OTA_GAIN[1:0]
0x02
R/W
BOOST_TOFF_MIN[1:0]
0x03
R/W
VDRIVE_BST_EN
0x04
R/W
BUCK1_OFF_CMP_EN
0x05
R/W
0x06
R/W
0x07
R/W
0x08
R/W
0x09
R/W
0x0A
R/W
0x0B
R/W
BUCK1_OC_OCCMP_COUNT[2:0]
0x0C
R/W
BUCK2_OC_OCCMP_COUNT[2:0]
0x0D
R/W
0x0
0x0E
R
0x0
ODD PARITY
VLED1ON[7:0]
0x0F
R
0x0
ODD PARITY
VLED2ON[7:0]
0x10
R
0x0
ODD PARITY
VLED1[7:0]
0x11
R
0x0
ODD PARITY
VLED2[7:0]
0x12
R
0x0
ODD PARITY
VTEMP[7:0]
0x13
R
0x0
ODD PARITY
VBOOST[7:0]
0x14
R
0x0
ODD PARITY
VBAT[7:0]
0x15
R
0x0
ODD PARITY
BUCK1_TON_DUR[7:0]
0x16
R
0x0
ODD PARITY
0x17
R
0x0
ODD PARITY
BUCKACTIVE1
BUCKACTIVE2
OPENLED1
SHORTLED1
OCLED1
OPENLED2
SHORTLED2
OCLED2
0x18
R
0x0
ODD PARITY
BOOST_STATUS
BOOST_OV
TEST1_FAIL
LEDCTRL1VAL
LEDCTRL2VAL
SPIERR
TSD
TW
0x19
R
0x0
ODD PARITY
0x1A
R
OTHERS
R
NOP register (read/write operation ignored)
BOOST_FREQ[4:0]
VBOOST_VGATE_THR
BOOST_SRCINV
BOOST_EN
BOOST_SLPCTRL[1:0]
BOOST_OV_REACT[1:0]
BOOST_VLIMTH[1:0]
BOOST_SRC
BOOST_OV_SD[2:0]
BOOST_VSETPOINT[6:0]
BUCK2_OFF_CMP_EN
BUCK1_VTHR[7:0]
BOOST_TON_MIN[1:0]
BUCK2_VTHR[7:0]
BUCK1_TOFF_VLED[3:0]
BUCK2_TOFF_VLED[3:0]
BOOST_SKCL[1:0]
BUCK1_EN
BUCK2_EN
THERMAL_WARNING_THR[7:0]
VDRIVE_VSETPOINT[3:0]
BOOST_MULTI_MD[1:0]
DIM_SRC[1:0]
PWM_FREQ[1:0]
PWM_DUTY1[9:0]
PWM_DUTY2[9:0]
BUCK1_OC_ISENSCMP_COUNT[6:0]
BUCK2_OC_ISENSCMP_COUNT[6:0]
LED_SEL_DUR[8:0]
BUCK2_TON_DUR[7:0]
0x0
HWR
0x0
VBOOST_OFF_COMP[4:0]
REVID[7:0]
0x0
www.onsemi.com
31
NCV78763
SPI REGISTERS DETAILS
ID: Register 0 /CR00: No Operation
Bit#
9
8
7
6
Field
5
4
3
2
1
0
0
0
0
0
0
NOP[9:0]
Reset Value (POR)
POR
0
Address
0
0x00hex
Bit
Name
9..0
NOP[9:0]
0
0
0
Access: N.A. (Not Applicable)
Description
No Operation register. Always reads zero and cannot be written. When in daisy chain
mode, trying to write all ones in the data field will force a change to SPI star mode.
ID: Register 1 /CR01: Booster Settings 01
Bit#
9
Field
8
7
BOOST_OTA_GAIN[1:0]
6
5
BOOST_SLPCTRL[1:0]
4
3
2
1
BOOST_FREQ[4:0]
0
BOOST_SRC[0]
Reset Value (POR)
POR
Address
Bit
9..0
0
0
0x01hex
0
0
0
0
0
0
0
0
Access: Read/Write
Name
Description
BST_SET_01[9:0]
Booster Settings register, group 01:
• Bit [0] − BOOST_SRC[0]: booster clock selection. When this bit equals one, external
clock is selected. Otherwise, internal clock in combination with the register
BOOST_FREQ[4:0].
• Bits [2:1] − BOOST_SLPCTRL[1:0]: booster slope compensation selection.
• Bits [7:3] − BOOST_FREQ[4:0]: booster frequency programming with internal generation (BOOST_SRC[0] = 0)
• Bits [9:8] − BOOST_OTA_GAIN[1:0]: booster error amplifier gain. Zero means output
in high impedance.
www.onsemi.com
32
NCV78763
ID: Register 2 /CR02: Booster Settings 02
Bit#
9
Field
8
BOOST_MIN_TOFF[1:0]
7
6
5
4
BOOST_VGATE_THR[0]
BOOST_SRC_INV[0]
BOOST_EN[0]
3
2
BOOST_OV_REACT[1:0]
1
0
BOOST_OV_SD[2:0]
Reset Value (POR)
POR
0
0
Address
0x02hex
Bit
9..0
0
0
0
0
0
0
0
0
Access: Read/Write
Name
Description
BST_SET_02[9:0]
Booster Settings register, group 02:
• Bits [2:0] − BOOST_OV_SD[2:0]: booster overvoltage shutdown. Controls the maximum allowed overshoot with respect to the regulation target.
• Bits [4:3] − BOOST_OV_REACT[1:0]: booster overvoltage reactivation. Defines the hysteresis for the reactivation once the overvoltage shutdown is triggered.
• Bit [5] − BOOST_EN[0]: booster enable. Controls the activation status of the booster (enabled when the bit is one).
• Bit [6] − BOOST_SRC_INV[0]: booster clock inversion. Controls the polarity of the clock source (“1” = inverted).
• Bit [7] − BOOST_VGATE_THR[0]: booster gate voltage threshold: defines the minimum voltage below which the MOSFET is considered off, allowing next start of the on time
• Bit [9:8] − BOOST_MIN_TOFF[1:0]: booster minimum off−time setting.
ID: Register 3 /CR03: Booster Settings 03
Bit#
9
8
Field
VDRIVE_BST_EN[0]
7
6
5
BOOST_VLIMTH[1:0]
4
3
2
1
0
0
0
BOOST_VSETPOINT[6:0]
Reset Value (POR)
POR
Address
Bit
9..0
0
0x03hex
0
0
0
0
0
0
0
Access: Read/Write
Name
Description
BST_SET_03[9:0]
Booster Settings register, group 03:
• Bits [6:0] − BOOST_VSETPOINT[6:0]: booster regulation setpoint voltage.
• Bits [8:7] − BOOST_VLIMTH[1:0]: booster current limitation peak value. Defines
the threshold for the current cycle by cycle peak comparator across the external
sense resistor.
• Bit [9] − VDRIVE_BST_EN[0]: controls the activation of the
VBOOST_AUX_SUPPLY (VDRIVE powered via the booster for low battery
voltages)
www.onsemi.com
33
NCV78763
ID: Register 4 /CR04: Buck Settings 01
Bit#
9
8
7
Field
BUCK1_OFF_CMP_EN[0]
BUCK2_OFF_CMP_EN[0]
6
5
4
3
2
1
0
0
0
BUCK1_VTHR[7:0]
Reset Value (POR)
POR
0
0
Address
0x04hex
Access: Read/Write
Bit
Name
Description
BCK_SET_01[9:0]
Buck Settings register, group 01:
• Bits [7:0] − BUCK1_VTHR[7:0]: buck regulator channel 1 comparator threshold voltage setting.
• Bit [8] − BUCK2_OFF_CMP_EN[0]: when programmed to one, the offset compensation for buck 2 is activated.
• Bit [9] − BUCK1_OFF_CMP_EN[0]: when programmed to one, the offset compensation for buck 1 is activated.
9..0
0
0
0
0
0
0
ID: Register 5 /CR05: Buck Settings 02
Bit#
Field
9
8
7
6
5
BOOST_TON_SET[1:0]
4
3
2
1
0
0
0
0
BUCK2_VTHR[7:0]
Reset Value (POR)
POR
Address
0
0x05hex
0
0
0
0
0
0
Access: Read/Write
Bit
Name
Description
9..0
BCK_SET_02[9:0]
Buck Settings register, group 02:
• Bits [7:0] − BUCK2_VTHR[7:0]: buck regulator channel 2 comparator threshold voltage setting.
• Bit [9:8] − BOOST_TON_SET[1:0]: booster minimum on time setting.
www.onsemi.com
34
NCV78763
ID: Register 6 /CR06: Buck Settings 03
Bit#
9
8
Field
7
6
BUCK1_TOFF_VLED[3:0]
4
3
2
BUCK2_TOFF_VLED[3:0]
1
0
BUCK_1_EN
BUCK_2_EN
0
0
Reset Value (POR)
POR
Address
0
0
0x06hex
Access: Read/Write
Bit
0
0
0
Name
9..0
0
0
Description
Buck Settings register, group 03:
• Bit [0] − BUCK1_EN[0]: buck regulator channel 1 enable bit.
• Bit [1] − BUCK2_EN[0]: buck regulator channel 2 enable bit.
• Bits [5:2] − BUCK2_TOFF_SET[3:0]: tunes the Toff x VLED value for channel 2.
• Bits [9:6] − BUCK1_TOFF_SET[3:0]: tunes the Toff x VLED value for channel 1.
BCK_SET_03[9:0]
ID: Register 7 /CR07: General Settings 01
Bit#
9
Field
8
7
6
5
BOOST_SKCL[1:0]
4
3
2
1
0
1
0
THERMAL_WARNING_THR[7:0]
Reset Value (POR)
POR
0
Address
0
0x07hex
Bit
1
0
1
0
0
Access: Read/Write
Name
9..0
1
GEN_SET_01[9:0]
Description
General settings register, group 01:
• Bits [7:0] − THERMAL_WARNING_THR[7:0]: thermal warning threshold setting. At POR,
the register value equals the thermal shutdown value (factory trimmed) minus 10° Celsius.
The formula between the SPI value and the temperature physical value is TEMP [°C] =
SPI_VALUE (dec) − 20.
• Bit [9:8] − BOOST_SKCL[1:0]: booster skip clock cycles setting.
ID: Register 8 /CR08: General Settings 02
Bit#
9
8
Field
7
6
VDRIVE_SETPOINT[3:0]
5
4
BOOST_MULTI_MD[1:0]
3
2
DIM_SRC[1:0]
1
0
PWM_FREQ[1:0]
Reset Value (POR)
POR
Address
Bit
9..0
0
0
0x08hex
0
0
0
0
0
0
0
Access: Read/Write
Name
GEN_SET_02[9:0]
Description
General settings register, group 02:
• Bits [1:0] − PWM_FREQ[1:0]: frequency selection for internal LED dimming generation.
• Bits [3:2] − DIM_SRC[1:0]: dimming external vs. internal generation selection.
• Bits [5:4] − BOOST_MULTI_MD[1:0]: reserved combination. Must be kept to zero.
• Bits [9:6] − VDRIVE_SETPOINT[3:0]: setpoint voltage for VDRIVE regulator.
www.onsemi.com
35
0
NCV78763
ID: Register 9 /CR09: PWM DUTY 01
Bit#
9
8
7
Field
6
5
4
3
2
1
0
0
0
0
0
0
PWM_DUTY_01[9:0]
Reset Value (POR)
POR
0
Address
0x09hex
Bit
9..0
0
0
0
0
Access: Read/Write
Name
Description
PWM_DUTY_01[9:0]
PWM duty cycle setting for channel 1:
• Bits [9:0] − PWM_DUTY_01[9:0]: PWM duty cycle programming for channel 1 in
case of internal dimming (1023dec = 100% duty cycle)
ID: Register 10 /CR10: PWM DUTY 02
Bit#
9
8
7
Field
6
5
4
3
2
1
0
0
0
0
0
0
PWM_DUTY_02[9:0]
Reset Value (POR)
POR
Address
0
0
0x0Ahex
0
0
0
Access: Read/Write
Bit
Name
Description
9..0
PWM_DUTY_02[9:0]
PWM duty cycle setting for channel 2:
• Bits [9:0] − PWM_DUTY_02[9:0]: PWM duty cycle programming for channel21 in
case of internal dimming (1023dec = 100% duty cycle)
ID: Register 11 /CR11: Overcurrent Settings 01
Bit#
9
Field
8
7
6
5
BUCK1_OC_OCCMP_COUNT[2:0]
4
3
2
1
0
0
0
BUCK1_OC_ISENSCMP_COUNT[6:0]
Reset Value (POR)
POR
Address
Bit
9..0
0
0
0x0Bhex
0
0
0
0
0
0
Access: Read/Write
Name
OVC_SET_01[9:0]
Description
Overcurrent settings register, group 01:
• Bits [6:0] − BUCK1_OC_ISENSCMP_COUNT[6:0]: overcurrent via the ISENSE 1
comparator − counter settings.
• Bits [9:7] − BUCK1_OC_OCCMP_COUNT[2:0]: overcurrent via internal switch 1
comparator − counter settings.
www.onsemi.com
36
NCV78763
ID: Register 12 /CR12: Overcurrent Settings 02
Bit#
9
8
Field
7
6
BUCK2_OC_OCCMP_COUNT[2:0]
5
4
3
2
1
0
BUCK2_OC_ISENSCMP_COUNT[6:0]
Reset Value (POR)
POR
0
Address
0
0x0Chex
Bit
9..0
0
0
0
0
0
0
0
0
Access: Read/Write
Name
Description
OVC_SET_02[9:0]
Overcurrent settings register, group 02:
• Bits [6:0] − BUCK2_OC_ISENSCMP_COUNT[6:0]: overcurrent via the
ISENSE 2 comparator − counter settings.
• Bits [9:7] − BUCK2_OC_OCCMP_COUNT[2:0]: overcurrent via internal
switch 2 comparator − counter settings.
ID: Register 13 /CR13: LED channel sampling selection time
Bit#
9
Field
0
POR
0
8
7
6
5
4
3
2
1
0
0
0
0
0
LED_SEL_DUR[8:0]
Reset Value (POR)
Address
0
0x0Dhex
0
0
0
0
Access: Read/Write
Bit
Name
Description
9..0
LED_SEL_DUR[8:0]
LED channel sampling duration
• Bits [8:0] − LED_SEL_DUR[8:0]: LED sampling duration selection (linked to the ADC
functioning, see details in ADC section).
• Bit [9] − Not used (will be always read out as zero).
ID: Register 14 / ADC 01: LED voltage ON measurement for channel 01
Bit#
9
8
Field
0
ODD Parity
7
6
5
4
3
2
1
0
0
0
0
VLED1ON[7:0]
Reset Value (POR)
POR
Address
0
1
0x0Ehex
0
0
0
0
0
Access: Read only
Bit
Name
9..0
VLED1ON[8:0]
Description
VLED channel 1 ON measurement
• Bits [7:0] − VLED1ON[7:0]: LED channel 1 on measurement − byte value.
• Bit [8] − VLED1ON[8]: LED channel 1 on measurement − parity bit (ODD).
• Bit [9] − Not Used.
www.onsemi.com
37
NCV78763
ID: Register 15 / ADC 02: LED voltage ON measurement for channel 02
Bit#
9
8
Field
0
ODD Parity
7
6
5
4
3
2
1
0
0
0
0
VLED2ON[7:0]
Reset Value (POR)
POR
0
Address
1
0x0Fhex
0
0
0
0
0
Access: Read only
Bit
Name
9..0
VLED2ON[8:0]
Description
VLED channel 2 ON measurement
• Bits [7:0] − VLED2ON[7:0]: LED channel 2 on measurement − byte value.
• Bit [8] − VLED2ON[8]: LED channel 2 on measurement − parity bit (ODD).
• Bit [9] − Not Used.
ID: Register 16 / ADC 03: LED voltage measurement for channel 01
Bit#
9
8
Field
0
ODD Parity
7
6
5
4
3
2
1
0
0
0
0
2
1
0
0
0
0
VLED1[7:0]
Reset Value (POR)
POR
0
Address
1
0x10hex
Bit
0
0
0
0
Access: Read only
Name
9..0
0
Description
VLED channel 1 measurement
• Bits [7:0] − VLED1[7:0]: LED channel 1 on measurement − byte value.
• Bit [8] − VLED1[8]: LED channel 1 on measurement − parity bit (ODD).
• Bit [9] − Not Used.
VLED1[8:0]
ID: Register 17 / ADC 04: LED voltage measurement for channel 02
Bit#
9
8
Field
0
ODD Parity
7
6
5
4
3
VLED2[7:0]
Reset Value (POR)
POR
Address
Bit
9..0
0
1
0x11hex
0
0
0
0
Access: Read only
Name
VLED2[8:0]
0
Description
VLED channel 2 measurement
• Bits [7:0] − VLED2[7:0]: LED channel 2 on measurement − byte value.
• Bit [8] − VLED2[8]: LED channel 2 on measurement − parity bit (ODD).
• Bit [9] − Not Used.
www.onsemi.com
38
NCV78763
ID: Register 18 / ADC 05: on−chip temperature measurement
Bit#
9
8
Field
0
ODD Parity
7
6
5
4
3
2
1
0
X
X
X
VTEMP[7:0]
Reset Value (POR)
POR
0
Address
X
0x12hex
Bit
X
X
X
X
Access: Read only
Name
9..0
X
Description
On−chip temperature measurement
• Bits [7:0] − VTEMP[7:0]: on chip temperature measurement − byte value.
• Bit [8] − VTEMP[8]: on chip temperature − parity bit (ODD).
• Bit [9] − Not Used.
VTEMP[8:0]
ID: Register 19 / ADC 06: boost voltage measurement
Bit#
9
8
Field
0
ODD Parity
7
6
5
4
3
2
1
0
X
X
X
VBOOST[7:0]
Reset Value (POR)
POR
0
Address
X
0x13hex
Bit
X
X
X
X
Access: Read only
Name
9..0
X
Description
Boost voltage measurement
• Bits [7:0] − VBOOST[7:0]: boost voltage measurement − byte value.
• Bit [8] − VBOOST[8]: boost voltage measurement − parity bit (ODD).
• Bit [9] − Not Used.
VBOOST[8:0]
ID: Register 20 / ADC 07: battery voltage measurement
Bit#
9
8
Field
0
ODD Parity
7
6
5
4
3
2
1
0
X
X
X
X
VBB[7:0]
Reset Value (POR)
POR
Address
Bit
9..0
X
X
0x14hex
X
X
X
Access: Read only
Name
VBB[8:0]
X
Description
Battery voltage measurement (on VBB pin)
• Bits [7:0] − VBB[7:0]: battery voltage measurement − byte value.
• Bit [8] − VBB[8]: battery voltage measurement − parity bit (ODD).
• Bit [9] − Not Used.
www.onsemi.com
39
NCV78763
ID: Register 21 / BUCK1_TON: buck 01 on−time measurements
Bit#
9
8
Field
0
ODD Parity
7
6
5
4
3
2
1
0
0
0
0
BUCK1_TON_DUR[7:0]
Reset Value (POR)
POR
0
Address
0x16hex
Bit
9..0
1
0
0
0
0
0
Access: Read only
Name
Description
BUCK1_TON_DUR[8:0]
Buck 01 on−time duration measurement
• Bits [7:0] − BUCK1_TON_DUR[7:0]: buck 01 on−time measurement − byte value
(multiples of 250ns typ.)
• Bit [8] − BUCK1_TON_DUR[8]: buck 01 on−time measurement − parity bit (ODD).
• Bit [9] − Not Used.
ID: Register 22 / BUCK2_TON: buck 02 on−time measurements
Bit#
9
8
Field
0
ODD Parity
POR
0
1
7
6
5
4
3
2
1
0
0
0
0
BUCK2_TON_DUR[7:0]
Reset Value (POR)
Address
Bit
9..0
0x16hex
0
0
0
0
0
Access: Read only
Name
BUCK2_TON_DUR[8:0]
Description
Buck 02 on−time duration measurement
• Bits [7:0] − BUCK2_TON_DUR[7:0]: buck 02 on−time measurement − byte value
(multiples of 250ns typ.)
• Bit [8] − BUCK2_TON_DUR[8]: buck 02 on−time measurement − parity bit (ODD).
• Bit [9] − Not Used.
www.onsemi.com
40
NCV78763
ID: Register 23 / Status Register 01
Bit#
9
8
7
6
5
4
3
2
1
0
Field
0
ODD
PARITY
BUCKACTIVE1
BUCKACTIVE2
OPENLED1
SHORTLED1
OCLED1
OPENLED2
SHORTLED2
OCLED2
POR
0
X
0
0
X
0
0
X
0
L
R
L
Reset Value (POR)
0
Flags type (Latched = L; Non−latched = R; Not applicable = N.A.)
Type
Address
N.A.
R
0x17hex
Bit
9..0
R
R
L
R
L
Access: R
Name
Description
STATUS_REG_01[9:0]
Status register 01
• Bit [0] − OCLED2[0]: buck channel 02 overcurrent flag (1 = overcurrent detected)
• Bit [1] − SHORTLED2[0]: buck channel 02 shorted LED string detection flag (1 = short detected)
• Bit [2] − OPENLED2[0]: buck channel 02 open LED string detection flag (1 = open detected)
• Bit [3] − OCLED1[0]: buck channel 01 overcurrent flag (1 = overcurrent detected)
• Bit [4] − SHORTLED1[0]: buck channel 01 shorted LED string detection flag (1 = short detected)
• Bit [5] − OPENLED1[0]: buck channel 01 open LED string detection flag (1 = open detected)
• Bit [6] − BUCKACTIVE2[0]: buck 02 active channel flag (1 = active)
• Bit [7] − BUCKACTIVE1[0]: buck 01 active channel flag (1 = active)
• Bit [8] − Status 01 parity bit (ODD).
• Bit [9] − Not Used.
ID: Register 24 / Status Register 02
Bit#
9
8
7
6
5
4
3
2
1
0
Field
0
ODD PARITY
BOOST_STATUS
BOOST_OV
RESERVED
LEDCTRL1VAL
LEDCTRL2VAL
SPIERR
TSD
TW
X
X
X
X
X
R
L
L
L
Reset Value (POR)
POR
0
X
Type
N.A.
R
0
X
X
Flags type (Latched = L ; Non latched = R; Not applicable = N.A.)
Address
Bit
9..0
0x18hex
R
L
N.A.
R
Access: R
Name
STATUS_REG_02[9:0]
Description
Status register 02
• Bit [0] − TW[0]: thermal warning flag (1 = thermal warning detected).
• Bit [1] − TSD[0]: thermal shutdown flag (1 = thermal shutdown detected).
• Bit [2] − SPIERR[0]: SPI error (1 = error detected).
• Bit [3] − LEDCTRL2VAL[0]: LEDCTRL2 input pin logic value (1 = input high)
• Bit [4] − LEDCTRL1VAL[0]: LEDCTRL1 input pin logic value (1 = input high)
• Bit [5] − RESERVED[0]: reserved bit. Read as zero.
• Bit [6] − BOOST_OV[0]: boost overvoltage flag (1 = overvoltage detected)
• Bit [7] − BOOST_STATUS[0]: booster activation physical status (1 = active)
• Bit [8] − Status 01 parity bit (ODD).
• Bit [9] − Not Used.
www.onsemi.com
41
NCV78763
ID: Register 25 / Status Register 03
Bit#
9
8
7
6
5
Field
0
ODD PARITY
0
0
HWR
4
3
2
1
0
VBOOST_OFF_COMP[4:0]
Reset Value (POR)
POR
0
X
0
0
1
X
X
X
X
X
R
R
R
Flags type (Latched = L ; Non latched = R; Not applicable = N.A.)
Type
N.A.
R
Address
0x19hex
Bit
9..0
N.A.
N.A.
L
R
R
Access: R
Name
Description
STATUS_REG_03[9:0]
Status register 02
• Bit [4:0] − VBOOST_OFF_COMP[4:0]: booster measurement compensation code (result of factory trimming)
• Bit [5] − HWR: hardware reset flag (1 = device is out of reset / after power
up).
• Bit [7:6] − Not Used. Read as zero.
• Bit [8] − Status 03 parity bit (ODD).
• Bit [9] − Not Used. Read as zero.
ID: Register 26 / REVISION ID
Bit#
9
8
Field
0
0
7
6
5
4
3
2
1
0
0
0
0
R
R
R
REVID[7:0]
Reset Value (POR)
POR
0
0
0
1
0
1
1
Flags type (Latched = L ; Non latched = R; Not applicable = N.A.)
Type
Address
Bit
9..0
NOTE:
N.A.
N.A.
0x1Ahex
R
R
R
R
R
Access: R
Name
Description
REV_ID[7:0]
Revision ID
• Bit [7:0] − REV_ID[4:0]: revision ID information register. Reports the device
revision number. Please note that this register is not protected by parity
and it is read only. The REV ID can be exploited by the by the microcontroller to recognize the device and its revision, thus adapting the firmware
parameters.
• Bit [9:8] − Not Used. Read as zero.
All other registers addresses are read only and report zeroes.
www.onsemi.com
42
NCV78763
DIAGNOSTICS
The NCV78763 features a wide range of embedded
diagnostic features. Their description follows. Please also
refer to the previous SPI section for more details.
Diagnostics Description
• Thermal Warning: this mechanism detects a
•
•
•
•
user−programmable junction temperature which is in
principle close, but lower, to the chip maximum
allowed, thus providing the information that some
action (power de−rating) is required to prevent
overheating that would cause Thermal Shutdown. A
typical power de−rating technique consists in reducing
the output dimming duty cycle in function of the
temperature: the higher the temperature above the
thermal warning, the lower the duty cycle. The thermal
warning flag (TW) is given in STATUS register 02 and
is latched. At power up the default thermal warning
threshold is typically 159°C (SPI code 179).
Thermal Shutdown: this safety mechanism intends to
protect the device from damage caused by overheating,
by disabling the booster and both buck channels, main
sources of power dissipation. The diagnostic is
displayed per means of the TSD bit in STATUS 02
(non−latched). Once occurred, the thermal shutdown
condition is automatically exited when the temperature
falls below the thermal warning level. The TSD flag is
instead latched and cleared by SPI reading. The
application thermal design should be made as such to
avoid the thermal shutdown in the worst case
conditions. The thermal shutdown level is not user
programmable and factory trimmed (see ADC_TSD in
Table 10).
SPI Error: in case of SPI communication errors the
SPIERR bit in STATUS 02 is set. The bit is latched. For
more details, please refer to section “SPI protocol:
framing and parity error”.
Open LEDx string: individual open LED diagnostic
flags indicate whether the “x” string is detected open.
The detection is based on a counter overflow of typical
50μs when the related channel is activated. Both
OPENLED1 and OPENLED2 flags (latched) are
contained in STATUS 01. Please note that the open
detection does not disable the buck channel(s).
Short LEDx string: a short circuit detection is
available independently for each LED channel per
•
•
•
•
•
•
means of the flag SHORTLEDx (non−latched, STATUS
01). The detection is based on the voltage measured at
the VLEDx pins via a dedicated internal comparator:
when the voltage drops below the VLED_LMT
minimum threshold (typical 1.8 V, see Table 15) the
related flag is set. Together with the detection, a fixed
TOFF is used. Note that the detection is active also
when the LEDx channel is off (in this case the fixed
TOFF does not play any role).
Overcurrent on Channel x: this diagnostics protects
the LEDx and the buck channel x electronics from
overcurrent. As the overcurrent is detected, the
OCLEDx flag (latched, STATUS 01) is raised and the
related buck channel is disabled. More details about the
detection mechanisms and parameters are given in
section “Buck Overcurrent Protection”.
Buck Active x: these flags report the actual status of
the buck channels (BUCKACTIVEx, non−latched,
STATUS 01). The MCU can exploit this information in
real time to check whether the channels responded to its
activation commands, or at the contrary, they were for
some reasons disabled.
Boost Status: the physical activation of the booster is
displayed by the BOOST_STATUS flag (non−latched,
STATUS 01). Please note this is different from the
BOOST_EN control bit, which reports instead the
willing to activate the booster. See also section ”Booster
Enable Control”.
Boost Overvoltage: an overvoltage is detected by the
booster control circuitry: BOOST_OV flag (latched,
STATUS 01). More details can be found in the booster
chapter.
LEDCTRLx pins Status: the actual logic status read at
the LEDCTRLx pin is reported by the flag
LEDCTRLxVAL (non−latched, STATUS 02). Thanks
to this diagnostic, the MCU can double−check the
proper connection to the led driver at PCB level, or
MCU pin stuck.
Hard Reset: the out of reset condition is reported
through the HWR bit (STATUS 03, latched). This bit is
set only at each Power On Reset (POR) and indicates
the device is ready to operate.
A short summary table of the main diagnostic bits related
to the LED outputs follows.
www.onsemi.com
43
NCV78763
Table 23. LED OUTPUTS DIAGNOSTIC TABLE SUMMARY
Diagnose
Flag
Description
Detection Level
LED Output
Latched
TW
Thermal Warning
SPI register
programmable
Not Disabled
(if no TSD, otherwise disabled)
Yes
TSD
Thermal Shutdown
Factory trimmed
Disabled
(automatically re−enabled when temp falls below TW)
Yes
OpenLEDx
LED string open
circuit
BUCK ON time >
BCK_TON_OPEN
(50 ms typical)
Not Disabled
Yes
ShortLEDx
LED string short
circuit
VLEDx < VLED_LMT
Not Disabled
(buck fixed TOFF applied when output is on)
No
OCLEDx
LED string
overcurrent
I_Buckswitch > OCD
Disabled
Yes
PCB LAYOUT RECOMMENDATIONS
developer to reduce application noise impact and insuring
the best system operation. All important areas are
highlighted in the following picture:
This section contains instructions for the NCV78763 PCB
layout application design. Although this guide does not
claim to be exhaustive, these directions can help the
V_Batt
L_BST
(C)
D_BST
FET_BST
(after rev. pol. Prot.)
C_BST_IN
C_BST
(A) (G)
C_M3V
R_BST_SENS
(F)
C_BB
VBOOSTBCK
BSTSYNC
VBOOST
VGATE
COMP
VBOOSTM3V
R_BC1
IBSTSENSE+
C_BC1
IBSTSENSE−
C_BC2
RBUCK_1
IBCK1SENSE−
LED−string 1
VINBCK1
LBCKSW1
VBB
LBCKSW1
C_DRIVE
VDRIVE
C_DD
VDD
ON Semiconductor
LED driver
VLED1
Front LightingIBCK2SENSE+
NCV78763
5V (5V MCU assumed)
IBCK2SENSE−
C_BCK_1
L_BCK_1
D_BCK_1
R_VLED_1
RBUCK_2
(B2)
LED−string 2
VINBCK2
R_SDO
μC
(B1)
IBCK1SENSE+
L_BCK_2
C_BCK_2
LBCKSW2
LEDCTRL1
D_BCK_2
LEDCTRL2
VLED2
SPI_SCLK
R_VLED_2
SPI_SDI
SPI_SDO
PWR GND
SPI_CSB
TST
TST1
TST2
(E)
GND GNDP EP
Sig GND
(D)
Figure 31. NCV78763 Application Critical PCB Areas
PCB Layout: Booster Current Sensing − Area (A)
affected by the MOSFET switching noise if no specific care
is taken. The following recommendations are given:
a. Use a four terminals current sense method as
depicted in the figure below. The measurement
PCB tracks should run in parallel and as close as
possible to each other, trying to have the same
length. The number of vias along the measurement
path should be minimized;
The booster current sensing circuit used both by the loop
regulation and the current limitation mechanism, relies on a
low voltage comparator, which triggers with respect to the
sense voltage across the external resistor R_BST_SENS. In
order to maximize power efficiency (=minimum losses on
the sense resistor), the threshold voltage is rather low, with
a maximum setting of 100 mV typical. This area may be
www.onsemi.com
44
NCV78763
this target, it is suggested to make a star connection between
these three points, close to the device pins. The width of the
tracks should be large enough (>40 mils) and as short as
possible to limit the PCB parasitic parameters.
b. Place R_BST_SENS sufficiently close to the
MOSFET source terminal;
c. The MOSFET’s dissipation area should be
stretched in a direction away from the sense
resistor to minimize resistivity changes due to
heating;
d. If the current sense measurement tracks are
interrupted by series resistors or jumpers (once as
a maximum) their value should be matched and
low ohmic (pair of 0 W to 47 W max) to avoid
errors due to the comparator input bias currents.
However, in case of high application noise, a PCB
re−layout without RC filters is always
recommended.
e. Avoid using the board GND as one of the
measurement terminals as this would also
introduce errors.
VBOOST PCB TRACK
(from boost power diode)
NCV78763
VBOOSTBCK
IBCK1SENSE+
IBCK2SENSE+
Figure 33. PCB Star Connection Between
VBOOSTBCK, IBCK1SENSE+ and IBCK2SENSE+
(simplified drawing)
POWER PCB TRACK
(from MOSFET SOURCE)
NCV78763
PCB Layout: GND Connections − Area (D)
IBSTSENSE+
IBSTSENSE−
The NCV78763 GND and GNDP pins must be connected
together. It is suggested to perform this connection directly
close to the device, behaving also as the cross−junction
between the signal GND (all low power related functions)
and the power GNDP (ground of VGATE driver). The
device exposed pad should be connected to the GND plane
for dissipation purposes.
It is recommended to place the VDD capacitor as close as
possible to the device pins and connected with specific
tracks, respectively to the VDD pin and to the GND pin (not
connected to the general ground plane, to avoid ground
shifts and application noise coupling directly into the chip).
Sensing PCB track (+)
Rboostsense
Sensing PCB track (−)
MOSFET DRAIN to source current flow
POWER PCB TRACK
(from sense resistor to Power GND)
Figure 32. Four Wires Method for Booster Current
Sensing Circuit
PCB Layout: Buck Current Sensing − Areas (B1) &
(B2)
The blocks (B1) and (B2) control the buck peak currents
by means, respectively, of the external sense resistors
R_BCK1/2_SENS. As the regulation is performed with a
comparator, the considerations explained in the previous
section remain valid. In particular, the use of a four terminals
current sense method is required, this time applied on
(IBCKxSENSE+, IBCKxSENSE−). Sense resistors should
be outside of the device PCB heating area in order to limit
measurement errors produced by temperature drifts.
PCB Layout: Buck Power Lines − Area (E)
To avoid power radiation and crosstalk between BUCK1
and BUCK2 regulators the VINBCKx and LBCKSWx
tracks have to be as short as possible. They should also be
symmetrical and the straightest. It is also recommended to
insert a ground plate between them, especially between
LBCKSW1 and LBCKSW2 track. See area “1” in the figure
below.
PCB Layout: Vboost related Tracks − Area (C)
PCB Layout: Booster Compensation Network − Area (F)
The three NCV78763 device pins VBOOSTBCK,
IBCK1SENSE+ and IBCK2SENSE+ must be at the same
individual voltage potential to guarantee proper functioning
of the internal buck current comparator (whose supply rails
are VBOOSTBCK and VBOOSTM3V). In order to achieve
The compensation network must be placed very close to
the chip and avoid noise capturing. It is recommended to
connect its ground directly to the chip ground pin to avoid
noise coming from other portions of the PCB ground. In
www.onsemi.com
45
NCV78763
highest. In fact, would the tracks be too long, the loop
antenna may capture a higher noise level, with the risk of
downgrading the chip’s performances.
addition a ground ring shall provide extra shielding ground
around. See area “2” in the figure.
PCB Layout: Additional EMC Recommendations on
Loops
It is suggested in general to have a good metal connection
to the ground and to keep it as continuous as possible, not
interrupted by resistors or jumpers.
In additions, PCB loops for power lines should be
minimized. A simplified application schematic is shown in
the next figure to better focus on the theoretical explanation.
When a DC voltage is applied to the VBB, at the left side of
the boost inductor L_BST, a DC voltage also appears on the
right side of L_BCK and on the C_BCK. However, due to
the switching operation (boost and buck), the applied
voltage generates AC currents flowing through the red area
(1). These currents also create time variable voltages in the
area marked in green (2). In order to minimize the radiation
due to the AC currents in area 1, the tracks’ length between
L_BST and the pair L_BCK plus C_BCK must be kept low.
At the contrary, if long tracks would be used, a bigger
parasitic capacitance in area 2 would be created, thus
increasing the coupled EMC noise level.
Figure 34. NCV78763 PCB Layout Example: areas (E)
and (F)
PCB Layout: High Frequency Loop on Capacitors −
Area (G)
All high frequency loops (with serial capacitor) have to be
very short, with the capacitor as close as possible to the chip,
to set the created loop antenna radiating frequency to the
Figure 35. PCB AC Current Lines (Area 1) and AC Voltage Nodes (Area 2)
ORDERING INFORMATION
Marking
Package
Shipping†
NCV78763DQ0R2G
NV78763−0
SSOP36 EP
(Pb−Free)
1500 / Tape & Reel
NCV78763MW0R2G
N78763−0
QFN32 5x5
(Pb−Free)
5000 / Tape & Reel
NCV78763MW1R2G
N78763−1
QFN32 7x7
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
46
NCV78763
PACKAGE DIMENSIONS
SSOP36 EP
CASE 940AB
ISSUE O
0.20 C A-B
D
DETAIL B
A
36
X
19
X = A or B
E1
ÉÉÉ
ÉÉÉ
PIN 1
REFERENCE
1
e/2
E
DETAIL B
36X
0.25 C
18
e
36X
B
b
0.25
M
T A
S
B
S
NOTE 6
TOP VIEW
A
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.13 TOTAL IN
EXCESS OF THE b DIMENSION AT MMC.
4. DIMENSION b SHALL BE MEASURED BETWEEN 0.10 AND 0.25 FROM THE TIP.
5. DIMENSIONS D AND E1 DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS. DIMENSIONS D AND E1 SHALL BE
DETERMINED AT DATUM H.
6. THIS CHAMFER FEATURE IS OPTIONAL. IF
IT IS NOT PRESENT, A PIN ONE IDENTIFIER
MUST BE LOACATED WITHIN THE INDICATED AREA.
D
4X
h
A2
DETAIL A
c
h
0.10 C
36X
SIDE VIEW
A1
C
SEATING
PLANE
END VIEW
D2
M1
M
GAUGE
PLANE
E2
L2
C
SEATING
PLANE
36X
L
DETAIL A
BOTTOM VIEW
SOLDERING FOOTPRINT*
5.90
36X
1.06
4.10
10.76
1
0.50
PITCH
36X
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
47
DIM
A
A1
A2
b
c
D
D2
E
E1
E2
e
h
L
L2
M
M1
MILLIMETERS
MIN
MAX
2.65
----0.10
2.35
2.60
0.18
0.36
0.23
0.32
10.30 BSC
5.70
5.90
10.30 BSC
7.50 BSC
3.90
4.10
0.50 BSC
0.25
0.75
0.50
0.90
0.25 BSC
0_
8_
5_
15 _
NCV78763
PACKAGE DIMENSIONS
QFN32 5x5, 0.5P
CASE 488AM
ISSUE A
PIN ONE
LOCATION
ÉÉ
ÉÉ
A
D
L
L
B
L1
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTIONS
E
0.15 C
0.15 C
A
DETAIL B
0.10 C
ÉÉÉ
ÇÇÇ
EXPOSED Cu
TOP VIEW
(A3)
A1
MOLD CMPD
DETAIL B
ALTERNATE
CONSTRUCTION
0.08 C
SEATING
PLANE
C
SIDE VIEW
NOTE 4
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
MILLIMETERS
MAX
MIN
0.80
1.00
−−−
0.05
0.20 REF
0.18
0.30
5.00 BSC
2.95
3.25
5.00 BSC
2.95
3.25
0.50 BSC
0.20
−−−
0.30
0.50
−−−
0.15
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
9
K
D2
5.30
3.35
17
8
32X
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
32X
0.63
L
E2
1
32
3.35 5.30
25
e
e/2
BOTTOM VIEW
32X
b
0.10
M
C A B
0.05
M
C
NOTE 3
0.50
PITCH
32X
0.30
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
48
NCV78763
PACKAGE DIMENSIONS
QFN32 7x7, 0.65P
CASE 485J−02
ISSUE E
SCALE 2:1
PIN 1
INDICATOR
ÇÇ
ÇÇ
A B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.25MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L
L
L1
DETAIL A
E
ALTERNATE TERMINAL
CONSTRUCTIONS
0.15 C
2X
TOP VIEW
DETAIL B
0.10 C
ÉÉ
ÇÇ
EXPOSED Cu
0.15 C
2X
A3
DETAIL B
A
0.08 C
ALTERNATE
CONSTRUCTION
C
DETAIL A
SEATING
PLANE
RECOMMENDED
MOUNTING FOOTPRINT*
D2
L
7.30
5.46
K
9
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.25
0.35
7.00 BSC
5.16
5.36
7.00 BSC
5.16
5.36
0.65 BSC
0.20
−−−
0.30
0.50
0.00
0.15
A1
SIDE VIEW
NOTE 4
32X
MOLD CMPD
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
16
17
8
32X
0.63
PACKAGE
OUTLINE
1
E2
5.46
7.30
24
1
32
25
e
e/2
32X
BOTTOM VIEW
b
0.10 C A B
0.05 C
32X
0.65
PITCH
NOTE 3
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
49
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCV78763/D