百度微电子有限公司 BAIDU MICRO ELECTRONS CO., LTD. SS52B thru SS510B SURFACE MOUNT REVERSE VOLTAGE - 20 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES SMB ● Metal-Semiconductor junction with gard ring ● Epitaxial construction ● Low forward voltage drop .083(2.11) .075(1.91) ● High current capability ● The plastic material carries UL recognition 94V-0 .155(3.94) .130(3.30) ● For use in low vlotage, high frequency inverters, free wheeling, and polarity protection applications .185(4.70) .160(4.06) .012(.305) .006(.152) .096(2.44) .084(2.13) MECHANICAL DATA ●Case： Molded Plastic .060(1.52) .030(0.76) ●Polarity:Color band denotes cathode ●Weight: 0.003 ounces,0.093 grams .008(.203) .002(.051) .220(5.59) .200(5.08) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL SS52B SS53B SS54B SS55B SS56B SS58B SS510B UNIT Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 80 100 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 V Maximum Average Forward Rectified Current 0.375″（9.5mm) Lead Lengths @TL=95 ℃ I(AV) 5.0 A IFSM 150 A Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) Maximum Forward Voltage at 5.0A DC VF Maximum DC Reverse Current @TJ=25℃ at Rated DC Bolcking Voltage @TJ=100℃ Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range 0.85 1.0 IR 500 RθJA 15 V mA 50 CJ 350 pF 10 ℃/W TJ -55 to +125 ℃ TSTG -55 to +150 ℃ NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC 2.Thermal resistance junction to ambient, 0.7 0.55 百度微电子有限公司 BAIDU MICRO ELECTRONS CO., LTD. SS52B thru SS510B FIG. 1 – FORWARD CURRENT DERATING CURVE FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, (AMPERES） AVERAGE FORWARD CURRENT (AMPERES) 6.0 5.0 4.0 3.0 2.0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.375″（9.5mm) LEAD LENGTHS 1.0 0 25 50 75 100 125 150 200 150 100 50 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) 0 1 175 2 5 LEAD TEMPERATURE (℃) 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.3 – TYPICAL JUNCTION CAPACITANCE FIG.4-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) 100 1000 SS52B-SS54B SS55B-SS510B T J = 25°C f = 1 MHz 100 0.1 10 SS52B-SS54B SS55B-SS56B 100 SS58B-SS510B 1.0 T J = 25°C 0.1 10 1 0.1 0.2 0.3 FIG.5-TYPICAL REVER CHARACTERISTICS 20 10 T J=100℃ 1.0 T J=75℃ 0.1 T J=25℃ 0.01 0.001 0 20 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE ,VOLTS INSTANTANEOUS REVERSE CURRENT(mA) CAPACITANCE, (pF) 4000 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)