HVGT HV10G25 25kV 10mA HIGH VOLTAGE DIODES Outline Drawings : mm HV10G25 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features High speed switching High Current 27 min. High surge resisitivity for CRT discharge High reliability design High Voltage 12 27 min. DO-312 Cathode Mark Applications X light Power supply Type Mark HV10G25 HV10G25 Laser Voltage doubler circuit Microwave emission power Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition HV10G25 Units 25 kV 10 mA I FSM 0.8 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 120 °C Storage Temperature Tstg -40 to +125 °C Conditions HV10G25 Units Repetitive Peak Renerse Voltage Average Output Current Suege Current V RRM IO Ta=25°C,Resistive Load Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 55 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 2.0 uA IR2 at 100°C,V R =VRRM 5.0 uA Maximum Reverse Recovery Time Trr at 25°C 100 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz -- pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2014