HVGT ESJA02-20 20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJA02-20 DO-415 Cathode Mark Lot No. o 4.2 Features o 0.8 High speed switching High Current High surge resisitivity for CRT discharge 25 min. 15 25 min. High reliability design High Voltage Cathode Mark Applications X light Power supply Type Mark Laser Voltage doubler circuit Microwave emission power HVGT ESJA20 -20 ESJA02-20 Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition ESJA02-20 Units 20 kV 20 mA I FSM 1.5 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 120 °C Storage Temperature Tstg Repetitive Peak Renerse Voltage Average Output Current Suege Current V RRM IO Ta=25°C,Resistive Load -40 to +125 °C Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions ESJA02-20 Units Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 40 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 3.0 uA IR2 at 100°C,V R =VRRM 30 uA Maximum Reverse Recovery Time Trr at 25°C 100 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz 1.0 pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2014