HVGT BR10F 10kV 0.4A HIGH VOLTAGE DIODES Outline Drawings : mm BR10F is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. DO-590 Cathode Mark Lot No. Features o 5.0 o 1.28 High speed switching High Current High surge resisitivity for CRT discharge 27 min. 9.0 High reliability design High Voltage Applications 27 min. Cathode Mark X light Power supply Type Laser Mark Voltage doubler circuit BR10F Microwave emission power BR10F Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition BR10F Units 10 kV 0.4 A peak I FSM 10 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature Tstg -40 to +125 °C Conditions BR10F Units Repetitive Peak Renerse Voltage Average Output Current Suege Current V RRM IO Ta=25°C,Resistive Load Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 25 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 5.0 uA IR2 at 100°C,V R =VRRM 50 uA Maximum Reverse Recovery Time Trr at 25°C 150 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz -- pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2014