ESJA08-08 (8kV/5mA) Outline Drawings : mm HIGH VOLTAGE DIODE ESJA08 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min. High speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 6.5 o 0.5 27 min. Cathode Mark Type Mark Applications Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer) ESJA08-08 57 Maximum Ratings and Characteristics White Absolute Maximum Ratings Items Repetitive Peak Renerse Voltage Symbols Condition VRRM ESJA08-08 Units 8 kV Average Output Current IO Ta=25°C,Resistive Load 5 mA Suege Current IFSM 10mS Sine-half wave peak value 0.5 Apeak Junction Temperature Tj 120 °C Allowable Operation Case Temperature Tc 100 °C Tstg -40 to +120 °C Conditions ESJA08-08 Units Storage Temperature Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Maximum Forward Voltage Drop VF at 25°C,IF=10mA 28 V Maximum Reverse Current IR1 at 25°C,VR=8kV 2 µA IR2 at 100°C,VR=8kV 5 µA 0.05 µs 2 pF Maximum Reverse Recovery Time trr at 25°C,IF=2mA,IR=4mA Junction Capacitance Cj at 25°C,VR=0V,f=1MHz ESJA08-08 (8kV/5mA) Characteristics Forward characteristic (VF-IF) Reverse characteristic (VR-IR) Typical Typical 10 Ta=25°C 30 Toil=100°C 25 IR (µA) IF (mA) 1 20 15 0.1 10 5 0.01 10 15 20 25 30 35 40 45 2 3 4 VF (V) 5 6 7 8 VR (kV) Reverse recovery time characteristic (Ta-trr) Avalanche characteristic (Vz-Iz) Typical Ta=25°C Typical 130 IF/IR=2/4mA 75%Recovery 120 100 110 trr (ns) Iz [µA] 100 10 90 80 70 60 50 40 1 30 8 9 10 11 12 13 14 15 16 50 60 70 80 90 100 110 120 130 Ta (°C) Vz [kV] GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected]