HVGT ESJC13-12 350mA 12kV HIGH VOLTAGE DIODES Outline Drawings : mm Finds use in applications such as Monitors, Static electricity dust collectors,Laser power supplies,ect.. Cathode Mark Lot No. o 7.0 o 1.28 Features High speed switching High Current 20 min. High surge resisitivity for CRT discharge High reliability design High Voltage 21 20 min. DO-721 Cathode Mark Applications X light Power supply Type Mark ESJC13-12 ESJC13 -12 Laser Voltage doubler circuit Microwave emission power Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition ESJC13-12 Units 12 kV 350 mA I FSM 30 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature Tstg -40 to +130 °C Repetitive Peak Renerse Voltage Average Output Current Suege Current V RRM IO Ta=25°C,Resistive Load Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols ESJC13-12 Conditions Units Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 11 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 5.0 uA IR2 at 100°C,V R =VRRM 50 uA Maximum Reverse Recovery Time Trr at 25°C -- nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz -- pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2014