HVGT ESJC30-08 8kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJC30-08 Cathode Mark Lot No. o 7.0 o 1.2 Features High speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 20 min. 21 20 min. DO-721 Cathode Mark Applications X light Power supply Type Mark ESJC30-08 ESJC30 -08 Laser Microwave emission power Maximum Ratings and Characteristics >>>> Voltage doubler circuit Absolute Maximum Ratings Symbols Items Condition ESJC30-08 Units 8.0 kV 300 mA I FSM 15 Apeak Junction Temperature Tj 120 °C Allowable Operation Case Temperature Tc 120 °C Storage Temperature Tstg -40 to +125 °C V RRM Repetitive Peak Renerse Voltage IO Average Output Current Suege Current Ta=25°C,Resistive Load Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions ESJC30-08 Units Maximum Forward Voltage Drop VF at 25°C,IF=IF(AV) 20 V Maximum Reverse Current IR1 at 25°C,VR=VRRM 5.0 µA IR2 at 100°C,VR=VRRM 50 µA Maximum Reverse Recovery Time Trr at 25°C 150 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz 15 pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2014