RENESAS CR05AM

Preliminary Datasheet
CR05BM-12A
R07DS0992EJ0100
Rev.1.00
Dec 20, 2012
600V - 0.5A - Thyristor
Low Power Use
Features
 IT (AV) : 0.5 A
 VDRM : 600 V
 IGT : 100 A
 Planar Type
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
1
1. Anode
2. Gate
3. Cathode
2
3
3
2
1
Applications
Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control application
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage Note1
DC off-state voltage Note1
Symbol
Voltage class
12
Unit
VRRM
VRSM
VR(DC)
VDRM
VD(DC)
600
720
480
600
480
V
V
V
V
V
Notes: 1. With gate to cathode resistance RGK = 1 k.
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Symbol
IT (RMS)
IT (AV)
Ratings
0.63
0.4
Unit
A
A
0.5
A
ITSM
8
A
I2 t
0.32
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.5
0.1
6
6
0.3
–40 to +125
–40 to +125
0.23
W
W
V
V
A
C
C
g
Conditions
Commercial frequency, sine half
wave 180 conduction, Ta = 54C
Commercial frequency, sine half
wave 180 conduction, Ta = 30C
50 Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 50 Hz, surge on-state current
Typical value
Page 1 of 7
CR05BM-12A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Symbol
IRRM
IDRM
Min.
—
—
Typ.
—
—
Max.
0.5
0.5
Unit
mA
mA
On-state voltage
VTM
—
—
1.2
V
Tc = 25C, ITM = 1.2 A,
instantaneous value
Gate trigger voltage
VGT
—
—
0.8
V
Tj = 25C, VD = 6 V,
Note3
IT = 0.1 A
Gate non-trigger voltage
VGD
0.2
—
—
V
Tj = 125C, VD = 1/2 VDRM
RGK = 1 k
Gate trigger current
IGT
1 Note2
—
100Note2
A
Tj = 25C, VD = 6 V,
Note3
IT = 0.1 A
Holding current
IH
—
—
5
mA
Rth (j-a)
—
—
150
C/W
Tj = 25C, VD = 12 V,
RGK = 1 k
Junction to ambient
Thermal resistance
Test conditions
Tj = 125C, VRRM applied
Tj = 125C, VDRM applied,
RGK = 1 k
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
D
E
IGT (A)
1 to 50
20 to 100
The above values do not include the current flowing through the 1 k resistance between the gate and cathode.
Notes: 3. IGT, VGT measurement circuit.
A1
3V
DC
IGS
IGT
A3
A2
RGK
1
1kΩ
Switch
2
60Ω
TUT
V1
6V
DC
VGT
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Page 2 of 7
CR05BM-12A
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
10
Surge On-State Current (A)
101
100
1
2
3
Gate Voltage (V)
2
101
102
Gate Trigger Current vs.
Junction Temperature
PGM = 0.5W
VGT = 0.8V
(Tj = 25°C)
100
PG(AV) = 0.1W
IGT = 100μA
(Tj = 25°C)
IFGM = 0.3V
VGD = 0.2V
10−1
100
101
102
× 100 (%)
Gate Characteristics
VFGM = 6V
103
Typical Example
102
101
100
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
1.0
Gate Trigger Voltage (V)
4
Conduction Time (Cycles at 60Hz)
101
10−2
10−2
6
On-State Voltage (V)
102
10−1
8
0 0
10
5
4
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
10−1
0
Distribution
0.8
Typical Example
0.6
0.4
0.2
0
–40 –20
0
20
40
60
80 100 120
Junction Temperature (°C)
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Transient Thermal Impedance (°C/W)
On-State Current (A)
Ta = 25°C
100
103
101
102
103
10−2
10−1
100
102
101
100 −3
10
Time (s)
Page 3 of 7
CR05BM-12A
Preliminary
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
0.7
0.6
0.5
0.4
0.3
θ
0.2
360°
0.1
0
Resistive,
inductive loads
0
θ
120
360°
80
60
θ = 30°
40
90°
180°
60° 120°
20
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Resistive,
inductive loads
Natural convection
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
θ = 30° 90°
60° 120°
180°
0.7
0.6
0.5
0.4
0.3
0.2
θ
θ
360°
0.1
0
Resistive loads
0
140
θ
120
θ
360°
Resistive loads
Natural convection
100
80
60
40
20
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
θ = 30° 60° 90° 120°
0
180°
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
160
90° 180°
θ = 30° 60° 120° 270°
DC
0.7
0.6
0.5
0.4
0.3
θ
0.2
360°
0.1
0
Resistive,
inductive loads
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Ambient Temperature (°C)
0.8
Average Power Dissipation (W)
140
Average On-State Current (A)
0.8
Average Power Dissipation (W)
Ambient Temperature (°C)
160
60° 120°
θ = 30°
90°
180°
Ambient Temperature (°C)
Average Power Dissipation (W)
0.8
140
θ
120
360°
Resistive,
inductive loads
Natural convection
100
80
60
40
20
0
θ = 30°
0
60° 120°
270°
90° 180°
DC
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Page 4 of 7
CR05BM-12A
Preliminary
× 100 (%)
Typical Example
140
120
100
80
60
40
20
RGK = 1kΩ
0
–40
160
0
40
80
120
160
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 1kΩ)
160
Breakover Voltage vs.
Gate to Cathode Resistance
120
Typical Example
100
80
60
40
20
Tj = 125°C
0
10−1
100
101
102
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
Typical Example
Holding Current (mA)
140
101
Tj = 125°C
RGK = 1kΩ
120
100
80
60
40
Distribution
Typical Example
IGT(25°C) = 35μA
100
10−1
20
0 0
10
101
102
RGK = 1kΩ
10−2
–40
0
103
40
80
160
120
Rate of Rise of Off-State Voltage (V/μs)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Turn-On Time vs.
Gate Current
102
600
Typical Example
Typical Example
500
Turn-On Time (μs)
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
× 100 (%)
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
Breakover Voltage vs.
Junction Temperature
400
300
200
VD = 100V
RL = 47Ω
RGK = 1kΩ
Ta = 25°C
101
100
100
Tj = 125°C
0 −1
10
100
101
102
Gate to Cathode Resistance (kΩ)
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
10−1 −1
10
100
101
102
Gate Current (mA)
Page 5 of 7
CR05BM-12A
Preliminary
40
Turn-Off Time (μs)
VD = 50V, VR = 50V
35 IT = 2A, RGK = 1kΩ
30
Typical Example
25
Distribution
20
15
10
5
0
0
20
40
60
80 100 120 140 160
Junction Temperature (°C)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
× 100 (%)
Turn-Off Time vs.
Junction Temperature
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
140
120
100
80
60
40
20
0
–40
0
40
80
160
120
Junction Temperature (°C)
× 100 (%)
104
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
VD = 6V
RL = 60Ω
Ta = 25°C
102
101 0
10
101
102
103
Gate Current Pulse Width (μs)
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Page 6 of 7
CR05BM-12A
Preliminary
Package Dimensions
Package Name
TO-92*
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code
T920
MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
Ordering Information
Orderable Part Number (example)
CR05BM-12A#B00
CR05BM-12A-D#B00
CR05BM-12A-A6#B00
CR05BM-12A-DA6#B00
CR05BM-12A-TB#B00
CR05BM-12A-DTB#B00
Note:
Packing
Bag
Bag
Bag
Bag
Adhesive Tape
Adhesive Tape
Quantity
500 pcs.
500 pcs.
500 pcs.
500 pcs.
2000 pcs.
2000 pcs.
Remark
Straight type
Straight type, IGT item: D
A6 Lead form
A6 Lead form, IGT item: D
A8 Lead form
A8 Lead form, IGT item: D
Please confirm the specification about the shipping in detail.
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Page 7 of 7
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Colophon 2.2