BCR12LM-12LD#B00 - Renesas Electronics

Preliminary Datasheet
BCR12LM-12LD
R07DS0983EJ0100
Rev.1.00
Dec 20, 2012
600V - 12A - Triac
Medium Power Use
Features








IT (RMS) : 12 A
VDRM : 600 V
IFGTI, IRGTI, IRGT: 50 mA
Viso: 1800V
Insulated Type
Planar Passivation Type
Tj: 150 °C
UL Recognized: File No. E223904
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2 3
Applications
Heater control, motor control
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
Voltage class
12
600
700
Symbol
VDRM
VDSM
Unit
V
V
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
12
A
Commercial frequency, sine full wave
360 conduction, Tc = 77C
Surge on-state current
ITSM
72
A
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
I2 t
21.6
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note5
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute
T1  T2  G terminal to case
Page 1 of 7
BCR12LM-12LD
Preliminary
Electrical Characteristics
Parameter
Symbol
Repetitive peak off-state current
On-state voltage
IDRM
VTM
Min.
—
—
Rated value
Typ.
Max.
—
2.0
—
1.8
Unit
Test conditions
mA
V
Tj = 150C, VDRM applied
Tc = 25C, ITM = 20A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
50
50
50
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2
—
—
—
—
4.3
V
C/W
Tj = 125C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10
—
—
V/s
Tj = 125C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 1.
2.
3.
4.
5.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth (c-f) in case of greasing is 0.5C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –6 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR12LM-12LD
Preliminary
Main Characteristics
Maximum On-State Characteristics
Rated Surge On-State Current
102
100
Surge On-State Current (A)
101
100
10−1
0
1
2
3
40
20
101
102
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
VGM = 10 V
PGM = 5 W
101
PG(AV)
= 0.5 W
VGT = 1.5 V
IGM = 2 A
100
IFGT I
IRGT I
IRGT III
VGD = 0.2 V
10−1 1
10
102
103
104
103
Typical Example
IRGT III
102
IFGT I
IRGT I
101
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
–40
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
60
On-State Voltage (V)
102
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
80
0
100
4
0
40
80
120
Junction Temperature (°C)
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tj = 25°C
102
5
103
104
100
101
4
3
2
1
0
10−1
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR12LM-12LD
Preliminary
No Fins
102
101
100
10−1 1
10
102
360° Conduction
Resistive,
12 inductive loads
8
4
0
105
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
2
4
6
8
160
Ambient Temperature (°C)
Curves apply regardless
of conduction angle
0
0
140
All fins are black painted
aluminum and greased
120
120 × 120 × t2.3
100
100 × 100 × t2.3
80
60 × 60 × t2.3
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
0
0
10 12 14 16
Natural convection
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
104
16
Conduction Time (Cycles at 60Hz)
160
Case Temperature (°C)
103
20
On-State Power Dissipation (W)
103
Maximum On-State Power Dissipation
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
Typical Example
105
104
103
102
–40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 7
BCR12LM-12LD
Preliminary
Latching Current vs.
Junction Temperature
103
103
Typical Example
Latching Current (mA)
102
0
40
80
120
101
T2+, G+
Typical Example T2–, G–
Typical Example
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140
120
100
80
60
40
20
0
−40
T2+, G–
Typical Example
102
100
–40
160
0
40
80
120
160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
101
−40
Distribution
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101
102
103
104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj=125°C)
102
160
Typical Example
Tj = 150°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
III Quadrant
Minimum
Value
I Quadrant
Time
Main
Voltage (dv/dt)c
VD
Main
IT
Current
100
100
(di/dt)c
τ
Time
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR12LM-12LD
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
102
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
101
Time
Main
Voltage (dv/dt)c
VD
Main
IT
Current
(di/dt)c
τ
Time
100
100
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Commutation Characteristics (Tj=150°C)
103
Typical Example
IRGT III
IRGT I
102
IFGT I
101
100
101
102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
6V
A
6V
330Ω
V
Test Procedure I
V
330Ω
Test Procedure II
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 6 of 7
BCR12LM-12LD
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Ordering Information
Orderable Part Number
BCR12LM-12LD#B00
BCR12LM-12LDA8#B00
Note:
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 7 of 7
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