Preliminary Data Sheet PS2514-1,PS2514L-1 R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES DESCRIPTION The PS2514-1 and PS2514L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor, enabling relatively high switching speed with high load resistor of several kΩ. The PS2514-1 is in a plastic DIP (Dual In-line Package) and the PS2514L-1 is lead bending type (Gull-wing) for surface mount. FEATURES • High isolation voltage (BV = 5 000 Vr.m.s.) PIN CONNECTION (Top View) • High collector to emitter voltage (VCEO = 40 V) • Guaranteed maximum switching speed 4 3 (toff ≤ 25 μs @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ) 1. Anode 2. Cathode 3. Emitter 4. Collector • High-speed switching (ton = 15 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ) (toff = 15 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ) • Embossed tape product: PS2514L-1-F3: 2 000 pcs/reel <R> • Pb-Free product <R> • Safety standards 1 2 • UL approved: No. E72422 • CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) • CQC approved: CQC11001056759/CQC11001056758 CQC11001056865/CQC11001057073 • DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option) APPLICATIONS • Power supply • FA equipment • Electronic electricity meter The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 Page 1 of 14 PS2514-1,PS2514L-1e PACKAGE DIMENSIONS (UNIT: mm) DIP Type PS2514-1 4.6±0.35 6.5+0.7 –0.5 4 3 1 2 3.5±0.3 3.2±0.4 4.15±0.4 7.62 0 to 15° +0.1 0.25 –0.05 1.25±0.15 0.50±0.10 0.25 M 2.54 Lead Bending Type PS2514L-1 4.6±0.35 3 1 2 0.1 +0.1 –0.05 3.5±0.3 0.25 +0.1 –0.05 6.5+0.7 –0.5 4 0.9±0.25 9.60±0.4 1.25±0.15 0.25 M 2.54 0.15 PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 7 mm Outer Creepage Distance 7 mm Inner Creepage Distance 4 mm Isolation Thickness R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 0.3 mm Page 2 of 14 PS2514-1,PS2514L-1e <R> MARKING EXAMPLE No. 1 pin Mark Company Initial Type Number Assembly Lot R 2514 NR131 N R 1 31 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package Pb-Free and New PKG Made in Japan Made in Taiwan R Y Halogen Free Remark "PS" and "-1" are omitted from original type number. R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 Page 3 of 14 PS2514-1,PS2514L-1e <R> ORDERING INFORMATION Part Number Order Number Packing Style Solder Plating Specification etc. PS2514-1 PS2514-1Y-A Pb-Free and PS2514L-1 PS2514L-1Y-A Halogen Free Safety Standard Approval Application Part *1 Number Standard products PS2514-1 Magazine case 100 pcs (UL, CSA, CQC PS2514L-1 PS2514L-1-F3 PS2514L-1Y-F3-A Embossed Tape 2 000 pcs/reel approved) PS2514-1-V PS2514-1Y-V-A Magazine case 100 pcs DIN EN60747-5-2 PS2514-1 PS2514L-1-V PS2514L-1Y-V-A (VDE0884 Part2) PS2514L-1 PS2514L-1-V-F3 PS2514L-1Y-V-F3-A Embossed Tape 2 000 pcs/reel approved (Option) *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Reverse Voltage VR 6 V Forward Current (DC) IF 30 mA ΔPD/°C 1.5 mW/°C PD 150 mW IFP 0.5 A Collector to Emitter Voltage VCEO 40 V Emitter to Collector Voltage VECO 0.6 V IC 20 mA ΔPC/°C 1.5 mW/°C PC 150 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C Diode Power Dissipation Derating Power Dissipation *1 Peak Forward Current Transistor Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 μs, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. RECOMMENDED OPERATING CONDITIONS Parameter Input Current R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 Symbol MIN. TYP. MAX. Unit IF 5 6 7 mA Page 4 of 14 PS2514-1,PS2514L-1e ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 5 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz Transistor Collector to Emitter Dark Current ICEO VCE = 40 V, IF = 0 mA Coupled Current Transfer Ratio CTR IF = 5 mA, VCE = 5 V VCE (sat) IF = 5 mA, IC = 1 mA Collector Saturation MIN. TYP. MAX. Unit 1.1 1.3 V 5 μA 10 50 pF 125 100 nA 200 % 0.35 V Voltage Ω RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 VCC = 5 V, IF = 5 mA, RL = 5 kΩ 15 25 15 25 Turn-on Time *1 ton Turn-off Time *1 toff 10 11 Isolation Resistance pF μs *1 Test circuit for switching time VCC Input Pulse Input RL = 5 kΩ VOUT IF ton td PW = 100 μs Duty Cycle = 1/10 toff ts 90% 50 Ω Output 10% tr R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 tf Page 5 of 14 PS2514-1,PS2514L-1e TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 125 100 1.5 mW/°C 75 50 25 0 0 25 50 75 100 125 150 100 1.5 mW/°C 75 50 25 0 0 25 50 75 100 125 150 FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 16 14 TA = +100°C +60°C +25°C 10 5 0°C –25°C –55°C 1 0.5 12 10 mA 10 5 mA 8 6 3 mA 4 IF = 2 mA 2 0.1 0.7 125 Ambient Temperature TA (°C) Collector Current IC (mA) Forward Current IF (mA) 50 150 Ambient Temperature TA (°C) 100 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 0 1.5 2 4 10 8 6 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 100 100 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) <R> 10 1 40 V 20 V 0.1 VCE = 10 V 0.01 −50 −25 0 25 50 75 100 Ambient Temperature TA (°C) 10 mA 10 5 mA 1 0.1 0 3 mA IF = 2 mA 0.2 0.4 0.6 0.8 1 Collector Saturation Voltage VCE (sat) (V) Remark The graphs indicate nominal characteristics. R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 Page 6 of 14 PS2514-1,PS2514L-1e CURRENT TRANSFER RATIO vs. FORWARD CURRENT 250 1.2 VCE = 5 V Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.0 0.8 0.6 0.4 0.2 0.0 −50 Normalized to 1.0 at TA = 25°C, IF = 5 mA, VCE = 5 V −25 0 25 50 75 200 B 150 100 50 10 100 Ambient Temperature TA (°C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 100 IF = 5 mA, VCC = 5 V, RL = 5 kΩ CTR = 100% IF = 5 mA, VCC = 5 V, CTR = 100% Switching Time t ( μ s) toff 10 ton 1 −50 −25 0 25 50 75 ts 10 tf tr 1 td 0.1 100 100 1 000 10 000 100 000 Ambient Temperature TA (°C) Load Resistance RL (Ω) TURN-ON TIME vs. AMBIENT TEMPERATURE TURN-OFF TIME vs. AMBIENT TEMPERATURE 100 100 IF = 5 mA, VCC = 5 V, RL = 5 kΩ Turn-off Time toff ( μ s) IF = 5 mA, VCC = 5 V, RL = 5 kΩ Turn-on Time ton ( μ s) C 0 1 100 100 Switching Time t ( μ s) Sample A CTR = 70% 10 170% 100% 10 CTR = 70% 100% 170% 1 −50 −25 0 25 50 75 100 Ambient Temperature TA (°C) 1 −50 −25 0 25 50 75 100 Ambient Temperature TA (°C) Remark The graphs indicate nominal characteristics. R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 Page 7 of 14 PS2514-1,PS2514L-1e FREQUENCY RESPONSE Normalized Gain GV (dB) 5 0 −5 300 Ω RL = 100 Ω −10 −15 −20 VCC = 5 V, IF = 5 mA, CTR = 170% −25 0.1 1 10 100 1 000 10 000 Frequency f (kHz) Remark The graphs indicate nominal characteristics. R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 Page 8 of 14 PS2514-1,PS2514L-1e TAPING SPECIFICATIONS (UNIT: mm) 1.55±0.1 4.5 MAX. 10.3±0.1 7.5±0.1 φ 1.5 +0.1 –0 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 4.0±0.1 5.3±0.1 8.0±0.1 0.4 Tape Direction PS2514L-1-F3 Outline and Dimensions (Reel) 2.0±0.5 φ 21.0±0.8 φ 100±1.0 R 1.0 φ 330±2.0 2.0±0.5 φ 13.0±0.2 17.5±1.0 21.5±1.0 Packing: 2 000 pcs/reel R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 15.9 to 19.4 Outer edge of flange Page 9 of 14 PS2514-1,PS2514L-1e RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) C D B <R> A Part Number PS2514L Lead Bending lead bending type (Gull-wing) for surface mount R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 A B C D 9.2 2.54 1.7 2.2 Page 10 of 14 PS2514-1,PS2514L-1e NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120 ± 30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T (°C) <R> (heating) to 10 s 260°C MAX. 220°C to 60 s 180°C 120°C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron • Peak temperature (lead part temperature) 350°C or below • Time (each pins) 3 seconds or less • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (4) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 Page 11 of 14 PS2514-1,PS2514L-1e 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between correctoremitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 Page 12 of 14 PS2514-1,PS2514L-1e <R> SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Spec. Unit 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.5 × UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices) UIORM Upr 890 1 335 Vpeak Vpeak Upr 1 669 Vpeak UTR 8 000 Vpeak Upr = 1.875 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 CTI Material group (DIN EN 60664-1 VDE0110 Part 1) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C Ris MIN. Ris MIN. 10 11 10 Package temperature Tsi 175 °C Current (input current IF, Psi = 0) Isi 400 mA Power (output or total power dissipation) Psi 700 mW Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25°C VIO = 500 V dc at TA MAX. at least 100°C 12 Ω Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Isolation resistance VIO = 500 V dc at TA = Tsi R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 9 Ω Page 13 of 14 PS2514-1,PS2514L-1e Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R08DS0012EJ0100 Rev.1.00 Mar 19, 2012 Page 14 of 14 Revision History PS2514-1,PS2514L-1 Data Sheet Rev. Date Page Description Summary 0.01 1.00 May 28, 2010 Mar 19, 2012 − Throughout Throughout p.1 p.3 p.4 pp.6 to 8 p.10 pp.11 to 12 p.13 First edition issued Preliminary Data Sheet -> Data Sheet Safety standards approved Addition of Pb-Free product Modification of MARKING EXAMPLE Modification of ORDERING INFORMATION Addition of TYPICAL CHARACTERISTICS Modification of RECOMMENDED MOUNT PAD DIMENSIONS Addition of NOTES ON HANDLING Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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