RENESAS PS2514L-1-V-F3

Preliminary Data Sheet
PS2514-1,PS2514L-1
R08DS0012EJ0100
Rev.1.00
Mar 19, 2012
HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES
DESCRIPTION
The PS2514-1 and PS2514L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor, enabling relatively high switching speed with high load resistor of several kΩ.
The PS2514-1 is in a plastic DIP (Dual In-line Package) and the PS2514L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
• High isolation voltage (BV = 5 000 Vr.m.s.)
PIN CONNECTION
(Top View)
• High collector to emitter voltage (VCEO = 40 V)
• Guaranteed maximum switching speed
4
3
(toff ≤ 25 μs @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
1. Anode
2. Cathode
3. Emitter
4. Collector
• High-speed switching (ton = 15 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
(toff = 15 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
• Embossed tape product: PS2514L-1-F3: 2 000 pcs/reel
<R>
• Pb-Free product
<R>
• Safety standards
1
2
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• CQC approved: CQC11001056759/CQC11001056758
CQC11001056865/CQC11001057073
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)
APPLICATIONS
• Power supply
• FA equipment
• Electronic electricity meter
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 1 of 14
PS2514-1,PS2514L-1e
PACKAGE DIMENSIONS (UNIT: mm)
DIP Type
PS2514-1
4.6±0.35
6.5+0.7
–0.5
4 3
1 2
3.5±0.3
3.2±0.4 4.15±0.4
7.62
0 to 15° +0.1
0.25 –0.05
1.25±0.15
0.50±0.10
0.25 M
2.54
Lead Bending Type
PS2514L-1
4.6±0.35
3
1
2
0.1 +0.1
–0.05
3.5±0.3
0.25 +0.1
–0.05
6.5+0.7
–0.5
4
0.9±0.25
9.60±0.4
1.25±0.15
0.25 M
2.54
0.15
PHOTOCOUPLER CONSTRUCTION
Parameter
Unit (MIN.)
Air Distance
7 mm
Outer Creepage Distance
7 mm
Inner Creepage Distance
4 mm
Isolation Thickness
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
0.3 mm
Page 2 of 14
PS2514-1,PS2514L-1e
<R>
MARKING EXAMPLE
No. 1 pin
Mark
Company Initial
Type Number
Assembly Lot
R
2514
NR131
N
R
1 31
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
Pb-Free and
New PKG
Made in Japan Made in Taiwan
R
Y
Halogen Free
Remark "PS" and "-1" are omitted from original type number.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 3 of 14
PS2514-1,PS2514L-1e
<R>
ORDERING INFORMATION
Part Number
Order Number
Packing Style
Solder Plating
Specification etc.
PS2514-1
PS2514-1Y-A
Pb-Free and
PS2514L-1
PS2514L-1Y-A
Halogen Free
Safety Standard
Approval
Application Part
*1
Number
Standard products PS2514-1
Magazine case 100 pcs
(UL, CSA, CQC
PS2514L-1
PS2514L-1-F3
PS2514L-1Y-F3-A
Embossed Tape 2 000 pcs/reel
approved)
PS2514-1-V
PS2514-1Y-V-A
Magazine case 100 pcs
DIN EN60747-5-2
PS2514-1
PS2514L-1-V
PS2514L-1Y-V-A
(VDE0884 Part2)
PS2514L-1
PS2514L-1-V-F3 PS2514L-1Y-V-F3-A
Embossed Tape 2 000 pcs/reel
approved
(Option)
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Reverse Voltage
VR
6
V
Forward Current (DC)
IF
30
mA
ΔPD/°C
1.5
mW/°C
PD
150
mW
IFP
0.5
A
Collector to Emitter Voltage
VCEO
40
V
Emitter to Collector Voltage
VECO
0.6
V
IC
20
mA
ΔPC/°C
1.5
mW/°C
PC
150
mW
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
−55 to +100
°C
Storage Temperature
Tstg
−55 to +150
°C
Diode
Power Dissipation Derating
Power Dissipation
*1
Peak Forward Current
Transistor
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
*1 PW = 100 μs, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
RECOMMENDED OPERATING CONDITIONS
Parameter
Input Current
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Symbol
MIN.
TYP.
MAX.
Unit
IF
5
6
7
mA
Page 4 of 14
PS2514-1,PS2514L-1e
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Diode
Symbol
Conditions
Forward Voltage
VF
IF = 5 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
Transistor
Collector to Emitter Dark
Current
ICEO
VCE = 40 V, IF = 0 mA
Coupled
Current Transfer Ratio
CTR
IF = 5 mA, VCE = 5 V
VCE (sat)
IF = 5 mA, IC = 1 mA
Collector Saturation
MIN.
TYP.
MAX.
Unit
1.1
1.3
V
5
μA
10
50
pF
125
100
nA
200
%
0.35
V
Voltage
Ω
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
0.5
VCC = 5 V, IF = 5 mA, RL = 5 kΩ
15
25
15
25
Turn-on Time
*1
ton
Turn-off Time
*1
toff
10
11
Isolation Resistance
pF
μs
*1 Test circuit for switching time
VCC
Input
Pulse Input
RL = 5 kΩ
VOUT
IF
ton
td
PW = 100 μs
Duty Cycle = 1/10
toff
ts
90%
50 Ω
Output
10%
tr
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
tf
Page 5 of 14
PS2514-1,PS2514L-1e
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
150
125
100
1.5 mW/°C
75
50
25
0
0
25
50
75
100
125
150
100
1.5 mW/°C
75
50
25
0
0
25
50
75
100
125
150
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
16
14
TA = +100°C
+60°C
+25°C
10
5
0°C
–25°C
–55°C
1
0.5
12
10 mA
10
5 mA
8
6
3 mA
4
IF = 2 mA
2
0.1
0.7
125
Ambient Temperature TA (°C)
Collector Current IC (mA)
Forward Current IF (mA)
50
150
Ambient Temperature TA (°C)
100
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
0
1.5
2
4
10
8
6
Forward Voltage VF (V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
100
100
Collector Current IC (mA)
Collector to Emitter Dark Current ICEO (nA)
<R>
10
1
40 V
20 V
0.1
VCE = 10 V
0.01
−50
−25
0
25
50
75
100
Ambient Temperature TA (°C)
10 mA
10
5 mA
1
0.1
0
3 mA
IF = 2 mA
0.2
0.4
0.6
0.8
1
Collector Saturation Voltage VCE (sat) (V)
Remark The graphs indicate nominal characteristics.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 6 of 14
PS2514-1,PS2514L-1e
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
250
1.2
VCE = 5 V
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
1.0
0.8
0.6
0.4
0.2
0.0
−50
Normalized to 1.0
at TA = 25°C,
IF = 5 mA, VCE = 5 V
−25
0
25
50
75
200
B
150
100
50
10
100
Ambient Temperature TA (°C)
Forward Current IF (mA)
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
100
IF = 5 mA, VCC = 5 V,
RL = 5 kΩ
CTR = 100%
IF = 5 mA, VCC = 5 V,
CTR = 100%
Switching Time t ( μ s)
toff
10
ton
1
−50
−25
0
25
50
75
ts
10
tf
tr
1
td
0.1
100
100
1 000
10 000
100 000
Ambient Temperature TA (°C)
Load Resistance RL (Ω)
TURN-ON TIME vs.
AMBIENT TEMPERATURE
TURN-OFF TIME vs.
AMBIENT TEMPERATURE
100
100
IF = 5 mA, VCC = 5 V,
RL = 5 kΩ
Turn-off Time toff ( μ s)
IF = 5 mA, VCC = 5 V,
RL = 5 kΩ
Turn-on Time ton ( μ s)
C
0
1
100
100
Switching Time t ( μ s)
Sample A
CTR = 70%
10
170%
100%
10
CTR = 70%
100%
170%
1
−50
−25
0
25
50
75
100
Ambient Temperature TA (°C)
1
−50
−25
0
25
50
75
100
Ambient Temperature TA (°C)
Remark The graphs indicate nominal characteristics.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 7 of 14
PS2514-1,PS2514L-1e
FREQUENCY RESPONSE
Normalized Gain GV (dB)
5
0
−5
300 Ω
RL = 100 Ω
−10
−15
−20
VCC = 5 V, IF = 5 mA,
CTR = 170%
−25
0.1
1
10
100
1 000
10 000
Frequency f (kHz)
Remark The graphs indicate nominal characteristics.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 8 of 14
PS2514-1,PS2514L-1e
TAPING SPECIFICATIONS (UNIT: mm)
1.55±0.1
4.5 MAX.
10.3±0.1
7.5±0.1
φ 1.5 +0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Tape Direction
PS2514L-1-F3
Outline and Dimensions (Reel)
2.0±0.5
φ 21.0±0.8
φ 100±1.0
R 1.0
φ 330±2.0
2.0±0.5
φ 13.0±0.2
17.5±1.0
21.5±1.0
Packing: 2 000 pcs/reel
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
15.9 to 19.4
Outer edge of
flange
Page 9 of 14
PS2514-1,PS2514L-1e
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
C
D
B
<R>
A
Part Number
PS2514L
Lead Bending
lead bending type (Gull-wing)
for surface mount
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
A
B
C
D
9.2
2.54
1.7
2.2
Page 10 of 14
PS2514-1,PS2514L-1e
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220°C
60 seconds or less
• Time to preheat temperature from 120 to 180°C
120 ± 30 s
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Recommended Temperature Profile of Infrared Reflow
Package Surface Temperature T (°C)
<R>
(heating)
to 10 s
260°C MAX.
220°C
to 60 s
180°C
120°C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
260°C or below (molten solder temperature)
• Time
10 seconds or less
• Preheating conditions
120°C or below (package surface temperature)
• Number of times
One (Allowed to be dipped in solder including plastic mold portion.)
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content
of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature)
350°C or below
• Time (each pins)
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 11 of 14
PS2514-1,PS2514L-1e
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between correctoremitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 12 of 14
PS2514-1,PS2514L-1e
<R>
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Climatic test class (IEC 60068-1/DIN EN 60068-1)
Spec.
Unit
55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.5 × UIORM, Pd < 5 pC
Test voltage (partial discharge test, procedure b for all devices)
UIORM
Upr
890
1 335
Vpeak
Vpeak
Upr
1 669
Vpeak
UTR
8 000
Vpeak
Upr = 1.875 × UIORM, Pd < 5 pC
Highest permissible overvoltage
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11))
2
CTI
Material group (DIN EN 60664-1 VDE0110 Part 1)
175
III a
Storage temperature range
Tstg
–55 to +150
°C
Operating temperature range
TA
–55 to +100
°C
Ris MIN.
Ris MIN.
10
11
10
Package temperature
Tsi
175
°C
Current (input current IF, Psi = 0)
Isi
400
mA
Power (output or total power dissipation)
Psi
700
mW
Ris MIN.
10
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
12
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Isolation resistance
VIO = 500 V dc at TA = Tsi
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
9
Ω
Page 13 of 14
PS2514-1,PS2514L-1e
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0012EJ0100 Rev.1.00
Mar 19, 2012
Page 14 of 14
Revision History
PS2514-1,PS2514L-1 Data Sheet
Rev.
Date
Page
Description
Summary
0.01
1.00
May 28, 2010
Mar 19, 2012
−
Throughout
Throughout
p.1
p.3
p.4
pp.6 to 8
p.10
pp.11 to 12
p.13
First edition issued
Preliminary Data Sheet -> Data Sheet
Safety standards approved
Addition of Pb-Free product
Modification of MARKING EXAMPLE
Modification of ORDERING INFORMATION
Addition of TYPICAL CHARACTERISTICS
Modification of RECOMMENDED MOUNT PAD DIMENSIONS
Addition of NOTES ON HANDLING
Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
All trademarks and registered trademarks are the property of their respective owners.
C-1
Notice
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Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
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Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
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