HRV103A Silicon Schottky Barrier Diode for Rectifying REJ03G0398-0300 Rev.3.00 Mar 25, 2008 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly. Ordering Information Part No. HRV103A Laser Mark S1 Package Name TURP Pin Arrangement Cathode mark Mark 1 S1 2 1. Cathode 2. Anode REJ03G0398-0300 Rev.3.00 Mar 25, 2008 Page 1 of 5 Package Code PUSF0002ZC-A HRV103A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol Value 30 30 1 5 125 –55 to +125 VRRM VR IO *2 IFSM *1 Tj Tstg Unit V V A A °C °C Notes: 1. 10 ms sine wave 1 pulse 2. Ta = 44°C, With Ceramics board (board size: 50 mm × 50 mm, Land size 2 mm × 2 mm) Short form wave (θ180°C), VR = 10 V. Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 VF3 Reverse current IR1 IR2 C Rth(j-a) Capacitance Thermal resistance Min — — Typ — — Max 0.27 0.36 — — — — — — — — — — 100 200 0.42 100 1000 40 — — Unit V μA pF °C/W Test Condition IF = 100 mA IF = 700 mA IF = 1 A VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz Ceramics board *1 Glass epoxy board *2 Notes: 1. Ceramics board 2.0 50h × 50w × 0.8t 0.5 2.0 0.3 2.0 Unit: mm 1.0 2. Glass epoxy board 6.0 50h × 50w × 0.8t 0.5 6.0 0.3 2.0 Unit: mm 1.0 3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow. REJ03G0398-0300 Rev.3.00 Mar 25, 2008 Page 2 of 5 HRV103A Main Characteristics 10–1 1.0 Ta = 75°C Pulse test Ta = 25°C 10–2 Reverse current IR (A) Forward current IF (A) 10–1 Pulse test 10–2 10–3 10–4 0 0.2 0.4 0.6 0.8 1.0 Ta = 25°C 10–4 10–6 0 10 20 30 40 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f=1MHz Pulse test 100 Capacitance C (pF) 10–3 10–5 10–5 10–6 Ta = 75°C 10 1.0 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage REJ03G0398-0300 Rev.3.00 Mar 25, 2008 Page 3 of 5 HRV103A 8 0.8 0.7 0A D=1/6 t T 0.6 Ta = 25°C sin D=1/3 0.5 D=1/2 0.4 DC 0.3 0.2 0.1 0 0 0.5 1.0 1.5 D=5/6 7 6 t T t D=— T D=2/3 Tj = 125°C 5 D=1/2 4 sin 3 2 1 0 0 10 20 30 40 Forward current IF (A) Reverse voltage VR (V) Fig.4 Forward power dissipation vs. Forward current Fig.5 Reverse power dissipation vs. Reverse voltage 1.2 Average rectified current IO (A) t D=— T Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0V 1.0 VR=VRRM/3 Tj =125°C Rth(j−a)=100°C/W DC 0.8 sin(θ=180°) 0.6 D=1/2 D=1/3 D=1/6 0.4 0.2 0 −25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.6 Average rectified current vs. Ambient temperature REJ03G0398-0300 Rev.3.00 Mar 25, 2008 Page 4 of 5 HRV103A Package Dimensions Package Name TURP JEITA Package Code ⎯ RENESAS Code PUSF0002ZC-A Previous Code TURP/TURPV MASS[Typ.] 0.004g D b b Lp1 E HE Lp2 c b1 b1 b2 Reference Symbol l1 A e1 l2 b3 Pattern of terminal position areas REJ03G0398-0300 Rev.3.00 Mar 25, 2008 Page 5 of 5 A b b1 c D E HE Lp1 Lp2 b2 b3 e1 l1 l2 Dimension in Millimeters Min Nom 0.55 0.75 0.08 1.15 1.80 2.40 0.40 1.30 0.60 0.80 0.13 1.25 1.90 2.50 0.50 1.40 0.8 1.1 0.5 0.8 2.0 Max 0.55 0.65 0.85 0.18 1.45 2.00 2.60 0.60 1.50 Sales Strategic Planning Div. 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