STZ1W-UL Series Silicon Zener Diodes Features • Low zener impedance • Excellent clamping capability Mechanical Data • Case: DO-41 Molded plastic • Epoxy: UL 94V-0 rate flame retardant • Terminals: Axial leads, solderable per MIL-STD-202 method 208 guaranteed • Polarity: Color band denotes cathode end • Mounting position: Any H C E T M E S Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Power Dissipation PD Operating Junction Temperature Tj Storage Temperature Range Tstg Value Unit 1 W - 55 to + 150 O - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA STZ1W-UL200B STZ1W-UL350B Symbol Max. Unit VF 1.2 2.4 V Characteristics at Ta = 25 OC Zener Voltage Type Marking VZnom (V) Min. (V) STZ1W-UL200B ZUL200B 200 190 STZ1W-UL350B ZUL350B 350 332.5 1) 1) VZT Dynamic Impedance Reverse Leakage Current at IZT ZZT at IZT IR at VR Max. (V) (µA) Max. (Ω) (mA) Max. (µA) (V) 210 50 9500 1 0.2 171 367.5 50 9800 1 0.2 299 Tested with pulses tp = 20 ms. Suffix "A" indicates ± 10% tolerance, Suffix "B" indicates ± 5% tolerance. SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 06/11/2012 E Rev: 03 STZ1W-UL Series H C E T M E S SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 06/11/2012 E Rev: 03